Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations9 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | WSe₂ monolayer thickness | 0.8nm | — | |||
| Fet Threshold Voltage | Dirac point | 246meV | — | |||
| Fet On Off Ratio | electron-electron interaction signature | gate-dependent peak splitting observed | — | |||
| Transport | Fermi velocity | 1200000m/s | — | |||
| Transport | vF₁ | 1090000m/s | — | |||
| Transport | vF₂ | 1360000m/s | — | |||
| Transport | Elarge | 115meV | — | |||
| Transport | E₀ | 79meV | — | |||
| Transport | EC | 35meV | — |
Related documents with shared materials, methods, properties, or citations.
Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope
Charge detection using a WSe2 van der Waals heterostructure
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Full quantitative near-field characterization of strongly coupled exciton-plasmon polaritons in thin-layered WSe2 on a monocrystalline gold platelet
Experimental observation of spin–split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
Nonlinear Valley and Spin Valves in Bilayer Graphene
Extrinsic nonlinear Kerr rotation in topological materials under a magnetic field
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High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations9 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | WSe₂ monolayer thickness | 0.8nm | — | |||
| Fet Threshold Voltage | Dirac point | 246meV | — | |||
| Fet On Off Ratio | electron-electron interaction signature | gate-dependent peak splitting observed | — | |||
| Transport | Fermi velocity | 1200000m/s | — | |||
| Transport | vF₁ | 1090000m/s | — | |||
| Transport | vF₂ | 1360000m/s | — | |||
| Transport | Elarge | 115meV | — | |||
| Transport | E₀ | 79meV | — | |||
| Transport | EC | 35meV | — |
Related documents with shared materials, methods, properties, or citations.
Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope
Charge detection using a WSe2 van der Waals heterostructure
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Full quantitative near-field characterization of strongly coupled exciton-plasmon polaritons in thin-layered WSe2 on a monocrystalline gold platelet
Experimental observation of spin–split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
Nonlinear Valley and Spin Valves in Bilayer Graphene
Extrinsic nonlinear Kerr rotation in topological materials under a magnetic field
P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations9 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | WSe₂ monolayer thickness | 0.8nm | — | |||
| Fet Threshold Voltage | Dirac point | 246meV | — | |||
| Fet On Off Ratio | electron-electron interaction signature | gate-dependent peak splitting observed | — | |||
| Transport | Fermi velocity | 1200000m/s | — | |||
| Transport | vF₁ | 1090000m/s | — | |||
| Transport | vF₂ | 1360000m/s | — | |||
| Transport | Elarge | 115meV | — | |||
| Transport | E₀ | 79meV | — | |||
| Transport | EC | 35meV | — |
Related documents with shared materials, methods, properties, or citations.
Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope
Charge detection using a WSe2 van der Waals heterostructure
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Full quantitative near-field characterization of strongly coupled exciton-plasmon polaritons in thin-layered WSe2 on a monocrystalline gold platelet
Experimental observation of spin–split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
Nonlinear Valley and Spin Valves in Bilayer Graphene
Extrinsic nonlinear Kerr rotation in topological materials under a magnetic field
P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations9 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | WSe₂ monolayer thickness | 0.8nm | — | |||
| Fet Threshold Voltage | Dirac point | 246meV | — | |||
| Fet On Off Ratio | electron-electron interaction signature | gate-dependent peak splitting observed | — | |||
| Transport | Fermi velocity | 1200000m/s | — | |||
| Transport | vF₁ | 1090000m/s | — | |||
| Transport | vF₂ | 1360000m/s | — | |||
| Transport | Elarge | 115meV | — | |||
| Transport | E₀ | 79meV | — | |||
| Transport | EC | 35meV | — |
Related documents with shared materials, methods, properties, or citations.
Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope
Charge detection using a WSe2 van der Waals heterostructure
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Full quantitative near-field characterization of strongly coupled exciton-plasmon polaritons in thin-layered WSe2 on a monocrystalline gold platelet
Experimental observation of spin–split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
Nonlinear Valley and Spin Valves in Bilayer Graphene
Extrinsic nonlinear Kerr rotation in topological materials under a magnetic field
P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
