Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations3 characterizations5 properties2 figures
4 preparations3 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | channel mobility | 26000cm²/Vs | — | |||
| Twist Angle | twist angle | 2.1deg | — | |||
| Moiré Wavelength | moiré wavelength | 9nm | — | |||
| Polarization | P₂D | 1.8e-13C/m | — | |||
| Hysteresis Sweep Range | Vbg sweep rate range | 100-900V/hr | — | |||
| Raman Peak | regex-detected Raman peak | 241cm⁻¹ | — | — | — | — |
| Raman Peak | regex-detected Raman peak | 308cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
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Tunable linearity of high-performance vertical dual-gate vdW phototransistor
Charge detection using a WSe2 van der Waals heterostructure
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations3 characterizations5 properties2 figures
4 preparations3 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | channel mobility | 26000cm²/Vs | — | |||
| Twist Angle | twist angle | 2.1deg | — | |||
| Moiré Wavelength | moiré wavelength | 9nm | — | |||
| Polarization | P₂D | 1.8e-13C/m | — | |||
| Hysteresis Sweep Range | Vbg sweep rate range | 100-900V/hr | — | |||
| Raman Peak | regex-detected Raman peak | 241cm⁻¹ | — | — | — | — |
| Raman Peak | regex-detected Raman peak | 308cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Experimental evidence for electron-electron interaction and spin-charge separation in graphene quantum dots
Experimental observation of spin–split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
Moiré-Engineered Ferroelectric Transistors for Nearly Trap-free, Low-Power and Non-Volatile 2D Electronics
Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Tunable linearity of high-performance vertical dual-gate vdW phototransistor
Charge detection using a WSe2 van der Waals heterostructure
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations3 characterizations5 properties2 figures
4 preparations3 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | channel mobility | 26000cm²/Vs | — | |||
| Twist Angle | twist angle | 2.1deg | — | |||
| Moiré Wavelength | moiré wavelength | 9nm | — | |||
| Polarization | P₂D | 1.8e-13C/m | — | |||
| Hysteresis Sweep Range | Vbg sweep rate range | 100-900V/hr | — | |||
| Raman Peak | regex-detected Raman peak | 241cm⁻¹ | — | — | — | — |
| Raman Peak | regex-detected Raman peak | 308cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Experimental evidence for electron-electron interaction and spin-charge separation in graphene quantum dots
Experimental observation of spin–split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
Moiré-Engineered Ferroelectric Transistors for Nearly Trap-free, Low-Power and Non-Volatile 2D Electronics
Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Tunable linearity of high-performance vertical dual-gate vdW phototransistor
Charge detection using a WSe2 van der Waals heterostructure
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations3 characterizations5 properties2 figures
4 preparations3 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | channel mobility | 26000cm²/Vs | — | |||
| Twist Angle | twist angle | 2.1deg | — | |||
| Moiré Wavelength | moiré wavelength | 9nm | — | |||
| Polarization | P₂D | 1.8e-13C/m | — | |||
| Hysteresis Sweep Range | Vbg sweep rate range | 100-900V/hr | — | |||
| Raman Peak | regex-detected Raman peak | 241cm⁻¹ | — | — | — | — |
| Raman Peak | regex-detected Raman peak | 308cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Experimental evidence for electron-electron interaction and spin-charge separation in graphene quantum dots
Experimental observation of spin–split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
Moiré-Engineered Ferroelectric Transistors for Nearly Trap-free, Low-Power and Non-Volatile 2D Electronics
Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Tunable linearity of high-performance vertical dual-gate vdW phototransistor
Charge detection using a WSe2 van der Waals heterostructure