Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | Fermi energy range | -300 to 300meV | — | |||
| Third Harmonic Generation Modulation Depth | TH modulation depth | 85% | — | |||
| Third Harmonic Generation Modulation Depth | TH intensity modulation by lattice temperature | 300% | — | |||
| Ir Band Position | IR band | 1350cm⁻¹ | — | — | — |
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Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Nonlinear Valley and Spin Valves in Bilayer Graphene
Quantized Landau-level crossing checkerboard in large-angle twisted graphene
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
High-yield fabrication of bubble-free magic-angle twisted bilayer graphene devices with high twist-angle homogeneity
Electronic transport in BN-encapsulated graphene limited by remote phonon scattering
High mobility transport in isotopically-enriched 12C and 13C exfoliated graphene
Van Hove singularity-driven giant Nernst signal in twisted double bilayer graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | Fermi energy range | -300 to 300meV | — | |||
| Third Harmonic Generation Modulation Depth | TH modulation depth | 85% | — | |||
| Third Harmonic Generation Modulation Depth | TH intensity modulation by lattice temperature | 300% | — | |||
| Ir Band Position | IR band | 1350cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Nonlinear Valley and Spin Valves in Bilayer Graphene
Quantized Landau-level crossing checkerboard in large-angle twisted graphene
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
High-yield fabrication of bubble-free magic-angle twisted bilayer graphene devices with high twist-angle homogeneity
Electronic transport in BN-encapsulated graphene limited by remote phonon scattering
High mobility transport in isotopically-enriched 12C and 13C exfoliated graphene
Van Hove singularity-driven giant Nernst signal in twisted double bilayer graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | Fermi energy range | -300 to 300meV | — | |||
| Third Harmonic Generation Modulation Depth | TH modulation depth | 85% | — | |||
| Third Harmonic Generation Modulation Depth | TH intensity modulation by lattice temperature | 300% | — | |||
| Ir Band Position | IR band | 1350cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Nonlinear Valley and Spin Valves in Bilayer Graphene
Quantized Landau-level crossing checkerboard in large-angle twisted graphene
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
High-yield fabrication of bubble-free magic-angle twisted bilayer graphene devices with high twist-angle homogeneity
Electronic transport in BN-encapsulated graphene limited by remote phonon scattering
High mobility transport in isotopically-enriched 12C and 13C exfoliated graphene
Van Hove singularity-driven giant Nernst signal in twisted double bilayer graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | Fermi energy range | -300 to 300meV | — | |||
| Third Harmonic Generation Modulation Depth | TH modulation depth | 85% | — | |||
| Third Harmonic Generation Modulation Depth | TH intensity modulation by lattice temperature | 300% | — | |||
| Ir Band Position | IR band | 1350cm⁻¹ | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moiré superlattice of transition metal dichalcogenides
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Nonlinear Valley and Spin Valves in Bilayer Graphene
Quantized Landau-level crossing checkerboard in large-angle twisted graphene
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
High-yield fabrication of bubble-free magic-angle twisted bilayer graphene devices with high twist-angle homogeneity
Electronic transport in BN-encapsulated graphene limited by remote phonon scattering
High mobility transport in isotopically-enriched 12C and 13C exfoliated graphene
Van Hove singularity-driven giant Nernst signal in twisted double bilayer graphene
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