Research paper
Experimental CharacterizationTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | top h-BN thickness | 10nm | — | |||
| Thickness | bottom h-BN thickness | 30nm | — | |||
| Thickness | SiO₂ thickness | 300nm | — | |||
| Thickness | Cr electrode thickness | 5nm | — | |||
| Thickness | Au electrode thickness | 75nm | — | |||
| Fet Carrier Concentration | carrier concentration | 1000000000cm⁻² | — | |||
| Transport Signal Amplitude | S₂ normalized to gold | 0.8 | — | |||
| Transport Signal Amplitude | S₂ normalized reference | 1 | — | |||
| Transport Signal Amplitude | S₂ normalized to gold | 0.66 | — | |||
| Transport Signal Amplitude | field dependence of graphene near-field signal | slight decrease | — | |||
| Transport Signal Amplitude | graphene with respect to gold | calculated relative amplitude spectrum | — | |||
| Transport Signal Amplitude | calculated S₂ amplitude | agreement with experiment | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | top h-BN thickness | 10nm | — | |||
| Thickness | bottom h-BN thickness | 30nm | — | |||
| Thickness | SiO₂ thickness | 300nm | — | |||
| Thickness | Cr electrode thickness | 5nm | — | |||
| Thickness | Au electrode thickness | 75nm | — | |||
| Fet Carrier Concentration | carrier concentration | 1000000000cm⁻² | — | |||
| Transport Signal Amplitude | S₂ normalized to gold | 0.8 | — | |||
| Transport Signal Amplitude | S₂ normalized reference | 1 | — | |||
| Transport Signal Amplitude | S₂ normalized to gold | 0.66 | — | |||
| Transport Signal Amplitude | field dependence of graphene near-field signal | slight decrease | — | |||
| Transport Signal Amplitude | graphene with respect to gold | calculated relative amplitude spectrum | — | |||
| Transport Signal Amplitude | calculated S₂ amplitude | agreement with experiment | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | top h-BN thickness | 10nm | — | |||
| Thickness | bottom h-BN thickness | 30nm | — | |||
| Thickness | SiO₂ thickness | 300nm | — | |||
| Thickness | Cr electrode thickness | 5nm | — | |||
| Thickness | Au electrode thickness | 75nm | — | |||
| Fet Carrier Concentration | carrier concentration | 1000000000cm⁻² | — | |||
| Transport Signal Amplitude | S₂ normalized to gold | 0.8 | — | |||
| Transport Signal Amplitude | S₂ normalized reference | 1 | — | |||
| Transport Signal Amplitude | S₂ normalized to gold | 0.66 | — | |||
| Transport Signal Amplitude | field dependence of graphene near-field signal | slight decrease | — | |||
| Transport Signal Amplitude | graphene with respect to gold | calculated relative amplitude spectrum | — | |||
| Transport Signal Amplitude | calculated S₂ amplitude | agreement with experiment | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | top h-BN thickness | 10nm | — | |||
| Thickness | bottom h-BN thickness | 30nm | — | |||
| Thickness | SiO₂ thickness | 300nm | — | |||
| Thickness | Cr electrode thickness | 5nm | — | |||
| Thickness | Au electrode thickness | 75nm | — | |||
| Fet Carrier Concentration | carrier concentration | 1000000000cm⁻² | — | |||
| Transport Signal Amplitude | S₂ normalized to gold | 0.8 | — | |||
| Transport Signal Amplitude | S₂ normalized reference | 1 | — | |||
| Transport Signal Amplitude | S₂ normalized to gold | 0.66 | — | |||
| Transport Signal Amplitude | field dependence of graphene near-field signal | slight decrease | — | |||
| Transport Signal Amplitude | graphene with respect to gold | calculated relative amplitude spectrum | — | |||
| Transport Signal Amplitude | calculated S₂ amplitude | agreement with experiment | — |