Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Co-intercalated NbSe₂ heterostructure device with ultra-thin h-BN encapsulation and Co/Ti contacts used for vertical transport and tunnelling measurements.
ExperimentalNbSe₂Studied MaterialBNSubstrate / DielectricCoCapping Or ContactTiCapping Or ContactAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricPMMASubstrate / Dielectric
Lateral spin valve device using Co-NbSe₂ injector/detector electrodes and pristine NbSe₂ channel, fabricated on Si/SiO₂ with h-BN barrier layers and Au contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Co-intercalated NbSe₂ heterostructure device with ultra-thin h-BN encapsulation and Co/Ti contacts used for vertical transport and tunnelling measurements.
ExperimentalNbSe₂Studied MaterialBNSubstrate / DielectricCoCapping Or ContactTiCapping Or ContactAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricPMMASubstrate / Dielectric
Lateral spin valve device using Co-NbSe₂ injector/detector electrodes and pristine NbSe₂ channel, fabricated on Si/SiO₂ with h-BN barrier layers and Au contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Co-intercalated NbSe₂ heterostructure device with ultra-thin h-BN encapsulation and Co/Ti contacts used for vertical transport and tunnelling measurements.
ExperimentalNbSe₂Studied MaterialBNSubstrate / DielectricCoCapping Or ContactTiCapping Or ContactAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricPMMASubstrate / Dielectric
Lateral spin valve device using Co-NbSe₂ injector/detector electrodes and pristine NbSe₂ channel, fabricated on Si/SiO₂ with h-BN barrier layers and Au contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Co-intercalated NbSe₂ heterostructure device with ultra-thin h-BN encapsulation and Co/Ti contacts used for vertical transport and tunnelling measurements.
ExperimentalNbSe₂Studied MaterialBNSubstrate / DielectricCoCapping Or ContactTiCapping Or ContactAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricPMMASubstrate / Dielectric
Lateral spin valve device using Co-NbSe₂ injector/detector electrodes and pristine NbSe₂ channel, fabricated on Si/SiO₂ with h-BN barrier layers and Au contacts.
