Abstract

Electron irradiation has demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. In-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion.

Abstract

Electron irradiation has demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. In-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion.

Abstract

Electron irradiation has demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. In-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion.

Abstract

Electron irradiation has demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. In-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion.