Research paperExperimental CharacterizationTheoreticalElectrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistorsShuai Zhang, Yang Xu, Junhe Zhang, Dihao Sun et al.Not specified in provided text·2025·10.1063/1.2776887·arXiv:2512.02909AbstractBistability is a key feature of nonlinear systems and is important for devices such as logic and information storage. This work reports experimental observation of electrically driven plasmon-polaritonic bistability in graphene/hBN/graphene tunneling transistors with a small twist angle between the graphene layers. Negative differential conductance from resonant tunneling of Dirac electrons enables electrical transport bistability and also drives tunable plasmon-polaritonic bistability. The effect is controlled through load resistance and gate voltage.Read more
Twist-controlled graphene/hBN/graphene resonant tunnel junction device with hBN barrier and hBN encapsulation on oxidized doped Si substrate.2 preparations2 characterizations4 properties2 figuresExperimentalCStudied MaterialhBNStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistorsShuai Zhang, Yang Xu, Junhe Zhang, Dihao Sun et al.Not specified in provided text·2025·10.1063/1.2776887·arXiv:2512.02909AbstractBistability is a key feature of nonlinear systems and is important for devices such as logic and information storage. This work reports experimental observation of electrically driven plasmon-polaritonic bistability in graphene/hBN/graphene tunneling transistors with a small twist angle between the graphene layers. Negative differential conductance from resonant tunneling of Dirac electrons enables electrical transport bistability and also drives tunable plasmon-polaritonic bistability. The effect is controlled through load resistance and gate voltage.Read more
Twist-controlled graphene/hBN/graphene resonant tunnel junction device with hBN barrier and hBN encapsulation on oxidized doped Si substrate.2 preparations2 characterizations4 properties2 figuresExperimentalCStudied MaterialhBNStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistorsShuai Zhang, Yang Xu, Junhe Zhang, Dihao Sun et al.Not specified in provided text·2025·10.1063/1.2776887·arXiv:2512.02909AbstractBistability is a key feature of nonlinear systems and is important for devices such as logic and information storage. This work reports experimental observation of electrically driven plasmon-polaritonic bistability in graphene/hBN/graphene tunneling transistors with a small twist angle between the graphene layers. Negative differential conductance from resonant tunneling of Dirac electrons enables electrical transport bistability and also drives tunable plasmon-polaritonic bistability. The effect is controlled through load resistance and gate voltage.Read more
Twist-controlled graphene/hBN/graphene resonant tunnel junction device with hBN barrier and hBN encapsulation on oxidized doped Si substrate.2 preparations2 characterizations4 properties2 figuresExperimentalCStudied MaterialhBNStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistorsShuai Zhang, Yang Xu, Junhe Zhang, Dihao Sun et al.Not specified in provided text·2025·10.1063/1.2776887·arXiv:2512.02909AbstractBistability is a key feature of nonlinear systems and is important for devices such as logic and information storage. This work reports experimental observation of electrically driven plasmon-polaritonic bistability in graphene/hBN/graphene tunneling transistors with a small twist angle between the graphene layers. Negative differential conductance from resonant tunneling of Dirac electrons enables electrical transport bistability and also drives tunable plasmon-polaritonic bistability. The effect is controlled through load resistance and gate voltage.Read more
Twist-controlled graphene/hBN/graphene resonant tunnel junction device with hBN barrier and hBN encapsulation on oxidized doped Si substrate.2 preparations2 characterizations4 properties2 figuresExperimentalCStudied MaterialhBNStudied MaterialExpand
