Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | twist angle | 1.16deg | — | |||
| Fet Threshold Voltage | twist angle | 1.12deg | — | |||
| Fet Threshold Voltage | twist-angle in homogeneous region | 1.1 ± 0.1deg | — | |||
| Fet Threshold Voltage | twist-angle variation | 0.02deg | — | |||
| Substrate Thickness | area of homogeneous region | 36um² | — | |||
| Fet On Off Ratio | fraction of devices with high-homogeneity regions | 0.38 | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | twist angle | 1.16deg | — | |||
| Fet Threshold Voltage | twist angle | 1.12deg | — | |||
| Fet Threshold Voltage | twist-angle in homogeneous region | 1.1 ± 0.1deg | — | |||
| Fet Threshold Voltage | twist-angle variation | 0.02deg | — | |||
| Substrate Thickness | area of homogeneous region | 36um² | — | |||
| Fet On Off Ratio | fraction of devices with high-homogeneity regions | 0.38 | — |
Related documents with shared materials, methods, properties, or citations.
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Resonant Dyakonov–Shur Magnetoplasmons in Graphene Terahertz Photodetectors
Graphene Josephson diodes from inherent asymmetric disorder
A Diamagnetic, Light-Driven Tesla Engine Based on a Mechanically Displaced, Magnetically Levitated Graphene Disk
Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Nonlinear Valley and Spin Valves in Bilayer Graphene
Edge dependence of nonlocal transport in gapped bilayer graphene
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Layer-selective hydrogenation and proton transport in twisted bilayer graphene
Graphene calorimetric single-photon detector
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | twist angle | 1.16deg | — | |||
| Fet Threshold Voltage | twist angle | 1.12deg | — | |||
| Fet Threshold Voltage | twist-angle in homogeneous region | 1.1 ± 0.1deg | — | |||
| Fet Threshold Voltage | twist-angle variation | 0.02deg | — | |||
| Substrate Thickness | area of homogeneous region | 36um² | — | |||
| Fet On Off Ratio | fraction of devices with high-homogeneity regions | 0.38 | — |
Related documents with shared materials, methods, properties, or citations.
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Resonant Dyakonov–Shur Magnetoplasmons in Graphene Terahertz Photodetectors
Graphene Josephson diodes from inherent asymmetric disorder
A Diamagnetic, Light-Driven Tesla Engine Based on a Mechanically Displaced, Magnetically Levitated Graphene Disk
Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Nonlinear Valley and Spin Valves in Bilayer Graphene
Edge dependence of nonlocal transport in gapped bilayer graphene
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Layer-selective hydrogenation and proton transport in twisted bilayer graphene
Graphene calorimetric single-photon detector
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | twist angle | 1.16deg | — | |||
| Fet Threshold Voltage | twist angle | 1.12deg | — | |||
| Fet Threshold Voltage | twist-angle in homogeneous region | 1.1 ± 0.1deg | — | |||
| Fet Threshold Voltage | twist-angle variation | 0.02deg | — | |||
| Substrate Thickness | area of homogeneous region | 36um² | — | |||
| Fet On Off Ratio | fraction of devices with high-homogeneity regions | 0.38 | — |
Related documents with shared materials, methods, properties, or citations.
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Resonant Dyakonov–Shur Magnetoplasmons in Graphene Terahertz Photodetectors
Graphene Josephson diodes from inherent asymmetric disorder
A Diamagnetic, Light-Driven Tesla Engine Based on a Mechanically Displaced, Magnetically Levitated Graphene Disk
Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures
Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
Nonlinear Valley and Spin Valves in Bilayer Graphene
Edge dependence of nonlocal transport in gapped bilayer graphene
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Layer-selective hydrogenation and proton transport in twisted bilayer graphene
Graphene calorimetric single-photon detector
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures