Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

Tianyi Huang, Sen Lin, Jingyi Zou, Zexiao Wang et al.

2024·10.1021/acsami.4c14865·arXiv:2404.14681

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2 preparations3 characterizations6 properties2 figures

ExperimentalTeStudied Materialh-BNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

2 preparations3 characterizations6 properties3 figures

ExperimentalTeStudied MaterialMoS₂Studied MaterialSiSubstrate / DielectricAuCapping Or Contact

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Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes | Matter42 Literature