Abstract

Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material’s properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron orbital ionization cross sections of an encapsulated WSe₂ layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of ionization of an isolated WSe₂ cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that subtle information about interlayer bonding and the effect on electron orbitals can be directly revealed with this technique.

Abstract

Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material’s properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron orbital ionization cross sections of an encapsulated WSe₂ layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of ionization of an isolated WSe₂ cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that subtle information about interlayer bonding and the effect on electron orbitals can be directly revealed with this technique.

Abstract

Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material’s properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron orbital ionization cross sections of an encapsulated WSe₂ layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of ionization of an isolated WSe₂ cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that subtle information about interlayer bonding and the effect on electron orbitals can be directly revealed with this technique.

Abstract

Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material’s properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron orbital ionization cross sections of an encapsulated WSe₂ layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of ionization of an isolated WSe₂ cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that subtle information about interlayer bonding and the effect on electron orbitals can be directly revealed with this technique.