Research paper
Experimental CharacterizationTheoreticalHeavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Le Zhang, Wenqiang Zhou, Xinjie Fang, Zhen Zhan et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | effective mass of Dirac fermions | 0.005m0 | — | |||
| Fet Mobility | effective mass beyond flat bands | 0.06m0 | — | |||
| Fet Mobility | enhanced quasiparticle effective mass | 2m0 | — | |||
| Fet Threshold Voltage | coherence temperature | 54K | — | |||
| Fet Threshold Voltage | Néel temperature | 14.2K | — | |||
| Fet Threshold Voltage | Hall resistance maximum temperature | 77K | — | |||
| Fet Threshold Voltage | Hall sign-change temperature | 45K | — | |||
| Fet Threshold Voltage | Hall minimum temperature | 13K | — | |||
| Fet On Off Ratio | effective mass enhancement factor | 33x | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | effective mass of Dirac fermions | 0.005m0 | — | |||
| Fet Mobility | effective mass beyond flat bands | 0.06m0 | — | |||
| Fet Mobility | enhanced quasiparticle effective mass | 2m0 | — | |||
| Fet Threshold Voltage | coherence temperature | 54K | — | |||
| Fet Threshold Voltage | Néel temperature | 14.2K | — | |||
| Fet Threshold Voltage | Hall resistance maximum temperature | 77K | — | |||
| Fet Threshold Voltage | Hall sign-change temperature | 45K | — | |||
| Fet Threshold Voltage | Hall minimum temperature | 13K | — | |||
| Fet On Off Ratio | effective mass enhancement factor | 33x | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | effective mass of Dirac fermions | 0.005m0 | — | |||
| Fet Mobility | effective mass beyond flat bands | 0.06m0 | — | |||
| Fet Mobility | enhanced quasiparticle effective mass | 2m0 | — | |||
| Fet Threshold Voltage | coherence temperature | 54K | — | |||
| Fet Threshold Voltage | Néel temperature | 14.2K | — | |||
| Fet Threshold Voltage | Hall resistance maximum temperature | 77K | — | |||
| Fet Threshold Voltage | Hall sign-change temperature | 45K | — | |||
| Fet Threshold Voltage | Hall minimum temperature | 13K | — | |||
| Fet On Off Ratio | effective mass enhancement factor | 33x | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | effective mass of Dirac fermions | 0.005m0 | — | |||
| Fet Mobility | effective mass beyond flat bands | 0.06m0 | — | |||
| Fet Mobility | enhanced quasiparticle effective mass | 2m0 | — | |||
| Fet Threshold Voltage | coherence temperature | 54K | — | |||
| Fet Threshold Voltage | Néel temperature | 14.2K | — | |||
| Fet Threshold Voltage | Hall resistance maximum temperature | 77K | — | |||
| Fet Threshold Voltage | Hall sign-change temperature | 45K | — | |||
| Fet Threshold Voltage | Hall minimum temperature | 13K | — | |||
| Fet On Off Ratio | effective mass enhancement factor | 33x | — |