Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Illias Klanurak; Kenji Watanabe; Takashi Taniguchi; Sojiphong Chatraphorn; Thiti Taychatanapat

doi:10.1186/s11671-022-03671-x

Paper details

Research paper

Experimental CharacterizationTheoretical

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Illias Klanurak, Kenji Watanabe, Takashi Taniguchi, Sojiphong Chatraphorn et al.

arXiv·2024·10.1186/s11671-022-03671-x·arXiv:2404.05038

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

1 preparation1 characterization2 properties2 figures

ExperimentalCStudied MaterialBNSubstrate / DielectricCrCapping Or ContactAuCapping Or Contact

Materials

tetralayer graphene

Studied Material

Also known as

4LGBernal-stacked tetralayer graphene

Variables

stacking= Bernal

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Mobility	electron mobility	180000cm²/Vs	C	An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr		—
Fet Mobility	hole mobility	110000cm²/Vs	C	An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Mobility	electron mobility	180000cm²/Vs	C	An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr		—
Fet Mobility	hole mobility	110000cm²/Vs	C	An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Mobility	electron mobility	180000cm²/Vs	C	An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr		—
Fet Mobility	hole mobility	110000cm²/Vs	C	An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Mobility	electron mobility	180000cm²/Vs	C	An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr		—
Fet Mobility	hole mobility	110000cm²/Vs	C	An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr		—

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Samples

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

Materials

Why these are connected

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Samples

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

Materials

Why these are connected

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Samples

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

Materials

Why these are connected

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Samples

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

Materials

Why these are connected

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Samples

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

Materials

Why these are connected

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Samples

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

Materials

Why these are connected

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Samples

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

Materials

Why these are connected

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Samples

An hBN/4LG/hBN encapsulated L-shaped Hall-bar device with Cr/Au electrical contacts and top-gate definition, used for transverse magnetic focusing and transport measurements.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations