Half state at νtot = -1/2 and its transition in Decoupled Twisted Double Bilayer Graphene | Matter42 Literature
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Half state at νtot = -1/2 and its transition in Decoupled Twisted Double Bilayer Graphene
Ning Ma, Kenji Watanabe, Takashi Taniguchi, Mitali Banerjee
2026·arXiv:2607.06547
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Decoupled twisted double bilayer graphene heterostructure device with ~8° twist angle, encapsulated by hBN dielectric layers and measured in a dual-gated transport geometry.
Half state at νtot = -1/2 and its transition in Decoupled Twisted Double Bilayer Graphene
Ning Ma, Kenji Watanabe, Takashi Taniguchi, Mitali Banerjee
2026·arXiv:2607.06547
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Decoupled twisted double bilayer graphene heterostructure device with ~8° twist angle, encapsulated by hBN dielectric layers and measured in a dual-gated transport geometry.
Half state at νtot = -1/2 and its transition in Decoupled Twisted Double Bilayer Graphene
Ning Ma, Kenji Watanabe, Takashi Taniguchi, Mitali Banerjee
2026·arXiv:2607.06547
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Decoupled twisted double bilayer graphene heterostructure device with ~8° twist angle, encapsulated by hBN dielectric layers and measured in a dual-gated transport geometry.
Half state at νtot = -1/2 and its transition in Decoupled Twisted Double Bilayer Graphene
Ning Ma, Kenji Watanabe, Takashi Taniguchi, Mitali Banerjee
2026·arXiv:2607.06547
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Decoupled twisted double bilayer graphene heterostructure device with ~8° twist angle, encapsulated by hBN dielectric layers and measured in a dual-gated transport geometry.