Abstract

This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields (D) and temperatures (T). Our measurements revealed that the non-local resistance (RNL) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance (RL) only when the D exceeds a critical value of ∼0.2 V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold (T < 25 K). Further, the value of RNL decreases in a linear fashion as the channel length (L) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied.

Abstract

This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields (D) and temperatures (T). Our measurements revealed that the non-local resistance (RNL) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance (RL) only when the D exceeds a critical value of ∼0.2 V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold (T < 25 K). Further, the value of RNL decreases in a linear fashion as the channel length (L) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied.

Abstract

This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields (D) and temperatures (T). Our measurements revealed that the non-local resistance (RNL) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance (RL) only when the D exceeds a critical value of ∼0.2 V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold (T < 25 K). Further, the value of RNL decreases in a linear fashion as the channel length (L) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied.

Abstract

This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields (D) and temperatures (T). Our measurements revealed that the non-local resistance (RNL) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance (RL) only when the D exceeds a critical value of ∼0.2 V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold (T < 25 K). Further, the value of RNL decreases in a linear fashion as the channel length (L) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied.