Abstract

Tunnel spectroscopy on NbSe₂ heterostructures using MoS₂ or hBN tunnel barriers and Ti/Au normal leads reveals subgap excitations in MoS₂-based devices but not in hBN-based devices. The data indicate that subgap states can originate from defects at the NbSe₂ edge or within MoS₂ barriers, while hBN barriers remain free of such features. Magnetic-field evolution of the subgap resonances is used to identify singlet and doublet ground states and to highlight the influence of spin-orbit coupling.

Abstract

Tunnel spectroscopy on NbSe₂ heterostructures using MoS₂ or hBN tunnel barriers and Ti/Au normal leads reveals subgap excitations in MoS₂-based devices but not in hBN-based devices. The data indicate that subgap states can originate from defects at the NbSe₂ edge or within MoS₂ barriers, while hBN barriers remain free of such features. Magnetic-field evolution of the subgap resonances is used to identify singlet and doublet ground states and to highlight the influence of spin-orbit coupling.

Abstract

Tunnel spectroscopy on NbSe₂ heterostructures using MoS₂ or hBN tunnel barriers and Ti/Au normal leads reveals subgap excitations in MoS₂-based devices but not in hBN-based devices. The data indicate that subgap states can originate from defects at the NbSe₂ edge or within MoS₂ barriers, while hBN barriers remain free of such features. Magnetic-field evolution of the subgap resonances is used to identify singlet and doublet ground states and to highlight the influence of spin-orbit coupling.

Abstract

Tunnel spectroscopy on NbSe₂ heterostructures using MoS₂ or hBN tunnel barriers and Ti/Au normal leads reveals subgap excitations in MoS₂-based devices but not in hBN-based devices. The data indicate that subgap states can originate from defects at the NbSe₂ edge or within MoS₂ barriers, while hBN barriers remain free of such features. Magnetic-field evolution of the subgap resonances is used to identify singlet and doublet ground states and to highlight the influence of spin-orbit coupling.