Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations1 characterization7 properties4 figures
2 preparations1 characterization3 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | edge transmission contrast | full transmission to full reflection across the constriction as Vsg is swept | — | |||
| Fet On Off Ratio | conductance oscillation regime | Coulomb-dominated oscillations observed at integer filling factors ν = 1–4 | — | |||
| Fet On Off Ratio | fractional QH oscillation regime | Coulomb-dominated oscillations observed at fractional filling factors | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = 2e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = 3e/5 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | mixed e/3 and 2e/3 signatures | — |
Related documents with shared materials, methods, properties, or citations.
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations1 characterization7 properties4 figures
2 preparations1 characterization3 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | edge transmission contrast | full transmission to full reflection across the constriction as Vsg is swept | — | |||
| Fet On Off Ratio | conductance oscillation regime | Coulomb-dominated oscillations observed at integer filling factors ν = 1–4 | — | |||
| Fet On Off Ratio | fractional QH oscillation regime | Coulomb-dominated oscillations observed at fractional filling factors | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = 2e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = 3e/5 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | mixed e/3 and 2e/3 signatures | — |
Related documents with shared materials, methods, properties, or citations.
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Dirac excited state quenching in graphene
Electric field tunable edge transport in Bernal stacked trilayer graphene
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Observation of time-reversal symmetric Hall effect in graphene-WSe2 heterostructures at room temperature
Edge dependence of nonlocal transport in gapped bilayer graphene
Extreme electron–hole drag and negative mobility in the Dirac plasma of graphene
Multi-Knob Switchable Chiral Superconductivity Quartet in Rhombohedral Graphene
High-field 1/f noise in hBN-encapsulated graphene transistors
Exploring room temperature spin transport under band gap opening in bilayer graphene
Landau-Level-Resolved Mode Mixing and Shot Noise in Gate-Defined Graphene Quantum Point Contacts
Continuously tunable anomalous Hall crystals in rhombohedral heptalayer graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations1 characterization7 properties4 figures
2 preparations1 characterization3 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | edge transmission contrast | full transmission to full reflection across the constriction as Vsg is swept | — | |||
| Fet On Off Ratio | conductance oscillation regime | Coulomb-dominated oscillations observed at integer filling factors ν = 1–4 | — | |||
| Fet On Off Ratio | fractional QH oscillation regime | Coulomb-dominated oscillations observed at fractional filling factors | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = 2e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = 3e/5 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | mixed e/3 and 2e/3 signatures | — |
Related documents with shared materials, methods, properties, or citations.
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Dirac excited state quenching in graphene
Electric field tunable edge transport in Bernal stacked trilayer graphene
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Observation of time-reversal symmetric Hall effect in graphene-WSe2 heterostructures at room temperature
Edge dependence of nonlocal transport in gapped bilayer graphene
Extreme electron–hole drag and negative mobility in the Dirac plasma of graphene
Multi-Knob Switchable Chiral Superconductivity Quartet in Rhombohedral Graphene
High-field 1/f noise in hBN-encapsulated graphene transistors
Exploring room temperature spin transport under band gap opening in bilayer graphene
Landau-Level-Resolved Mode Mixing and Shot Noise in Gate-Defined Graphene Quantum Point Contacts
Continuously tunable anomalous Hall crystals in rhombohedral heptalayer graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations1 characterization7 properties4 figures
2 preparations1 characterization3 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | edge transmission contrast | full transmission to full reflection across the constriction as Vsg is swept | — | |||
| Fet On Off Ratio | conductance oscillation regime | Coulomb-dominated oscillations observed at integer filling factors ν = 1–4 | — | |||
| Fet On Off Ratio | fractional QH oscillation regime | Coulomb-dominated oscillations observed at fractional filling factors | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = 2e/3 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | q = 3e/5 | — | |||
| Fet Threshold Voltage | tunneling quasiparticle charge | mixed e/3 and 2e/3 signatures | — |
Related documents with shared materials, methods, properties, or citations.
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Dirac excited state quenching in graphene
Electric field tunable edge transport in Bernal stacked trilayer graphene
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Observation of time-reversal symmetric Hall effect in graphene-WSe2 heterostructures at room temperature
Edge dependence of nonlocal transport in gapped bilayer graphene
Extreme electron–hole drag and negative mobility in the Dirac plasma of graphene
Multi-Knob Switchable Chiral Superconductivity Quartet in Rhombohedral Graphene
High-field 1/f noise in hBN-encapsulated graphene transistors
Exploring room temperature spin transport under band gap opening in bilayer graphene
Landau-Level-Resolved Mode Mixing and Shot Noise in Gate-Defined Graphene Quantum Point Contacts
Continuously tunable anomalous Hall crystals in rhombohedral heptalayer graphene