Research paper
Experimental CharacterizationTheoreticalFractional Quantum Anomalous Hall Effect in Multilayer Graphene
Zhengguang Lu, Tonghang Han, Yuxuan Yao, Aidan P. Reddy et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | quantized Hall resistance at v = 1 | ±h/e^2 | — | |||
| Fet Sheet Resistance | Rxx at v = 1 | 5ohm | — | |||
| Fet On Off Ratio | quantized Hall resistance at v = 1/2 | 2h/e^2 | — | |||
| Fet On Off Ratio | quantized Hall resistance at fractional fillings | h/e^2 | — | |||
| Fet Carrier Concentration | plateau width in carrier density | 30000000000cm⁻² | — | |||
| Fet Mobility | electron mobility | high | — | |||
| Band Gap | lowest conduction moiré band bandwidth | <5meV | — | — | ||
| Band Gap | lowest valence moiré band bandwidth | >45meV | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | quantized Hall resistance at v = 1 | ±h/e^2 | — | |||
| Fet Sheet Resistance | Rxx at v = 1 | 5ohm | — | |||
| Fet On Off Ratio | quantized Hall resistance at v = 1/2 | 2h/e^2 | — | |||
| Fet On Off Ratio | quantized Hall resistance at fractional fillings | h/e^2 | — | |||
| Fet Carrier Concentration | plateau width in carrier density | 30000000000cm⁻² | — | |||
| Fet Mobility | electron mobility | high | — | |||
| Band Gap | lowest conduction moiré band bandwidth | <5meV | — | — | ||
| Band Gap | lowest valence moiré band bandwidth | >45meV | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | quantized Hall resistance at v = 1 | ±h/e^2 | — | |||
| Fet Sheet Resistance | Rxx at v = 1 | 5ohm | — | |||
| Fet On Off Ratio | quantized Hall resistance at v = 1/2 | 2h/e^2 | — | |||
| Fet On Off Ratio | quantized Hall resistance at fractional fillings | h/e^2 | — | |||
| Fet Carrier Concentration | plateau width in carrier density | 30000000000cm⁻² | — | |||
| Fet Mobility | electron mobility | high | — | |||
| Band Gap | lowest conduction moiré band bandwidth | <5meV | — | — | ||
| Band Gap | lowest valence moiré band bandwidth | >45meV | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | quantized Hall resistance at v = 1 | ±h/e^2 | — | |||
| Fet Sheet Resistance | Rxx at v = 1 | 5ohm | — | |||
| Fet On Off Ratio | quantized Hall resistance at v = 1/2 | 2h/e^2 | — | |||
| Fet On Off Ratio | quantized Hall resistance at fractional fillings | h/e^2 | — | |||
| Fet Carrier Concentration | plateau width in carrier density | 30000000000cm⁻² | — | |||
| Fet Mobility | electron mobility | high | — | |||
| Band Gap | lowest conduction moiré band bandwidth | <5meV | — | — | ||
| Band Gap | lowest valence moiré band bandwidth | >45meV | — | — |