Research paperExperimental CharacterizationTheoreticalFractional Quantum Anomalous Hall Effect in Multilayer GrapheneZhengguang Lu, Tonghang Han, Yuxuan Yao, Aidan P. Reddy et al.2025·10.48550/arxiv.2309.17436·arXiv:2309.17436AbstractThe fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moiré superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moiré superlattice respectively, accompanied by dips in longitudinal resistance. By tuning the gate displacement field D and v, we observed phase transitions from composite Fermi liquid and FQAH states to other correlated electron states.Read more
Device 1 rhombohedral pentalayer graphene/hBN moiré superlattice transport device used for the main text data.2 characterizations6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / Dielectricgraphene/hBN moiré superlatticeStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalFractional Quantum Anomalous Hall Effect in Multilayer GrapheneZhengguang Lu, Tonghang Han, Yuxuan Yao, Aidan P. Reddy et al.2025·10.48550/arxiv.2309.17436·arXiv:2309.17436AbstractThe fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moiré superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moiré superlattice respectively, accompanied by dips in longitudinal resistance. By tuning the gate displacement field D and v, we observed phase transitions from composite Fermi liquid and FQAH states to other correlated electron states.Read more
Device 1 rhombohedral pentalayer graphene/hBN moiré superlattice transport device used for the main text data.2 characterizations6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / Dielectricgraphene/hBN moiré superlatticeStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalFractional Quantum Anomalous Hall Effect in Multilayer GrapheneZhengguang Lu, Tonghang Han, Yuxuan Yao, Aidan P. Reddy et al.2025·10.48550/arxiv.2309.17436·arXiv:2309.17436AbstractThe fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moiré superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moiré superlattice respectively, accompanied by dips in longitudinal resistance. By tuning the gate displacement field D and v, we observed phase transitions from composite Fermi liquid and FQAH states to other correlated electron states.Read more
Device 1 rhombohedral pentalayer graphene/hBN moiré superlattice transport device used for the main text data.2 characterizations6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / Dielectricgraphene/hBN moiré superlatticeStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalFractional Quantum Anomalous Hall Effect in Multilayer GrapheneZhengguang Lu, Tonghang Han, Yuxuan Yao, Aidan P. Reddy et al.2025·10.48550/arxiv.2309.17436·arXiv:2309.17436AbstractThe fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moiré superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moiré superlattice respectively, accompanied by dips in longitudinal resistance. By tuning the gate displacement field D and v, we observed phase transitions from composite Fermi liquid and FQAH states to other correlated electron states.Read more
Device 1 rhombohedral pentalayer graphene/hBN moiré superlattice transport device used for the main text data.2 characterizations6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / Dielectricgraphene/hBN moiré superlatticeStudied MaterialExpand
