Patent
US 9,525,117THERMOELECTRIC MATERIALS BASED ON SINGLE CRYSTAL AlInN-GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY
Nelson Tansu
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,525,117Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates XRD rocking curves in c-axis for n-Al i..xInx N thin films grown on GaN/sapphire template;
Figure 2 illustrates the measured electron mobility for Al i..xInx N alloys with various In-content (x) from x= 0. 11 up to x = 0.2134 at T = 300K;
Figure 3 illustrates (a) the set up for the thermal gradient method for Seebeck voltage measurements of A l InN samples; (b) Seebeck voltage as a function of the 1279011.2 12/8/10 3 Attorney Docket No. 355940.00091 temperature difference and (c) measured Seebeck coefficients for Al ixInx N alloys with …
Figure 4 illustrates the measured power factors for Al i.xInx N alloys with various In-content (x) from x=0.11 up to x = 0.2134 at T=300K;
Figure 5 illustrates (a) a cross sectional schematic of a four-probe 3 w measurement set up for n-Al i.xInx N films grown on GaN/sapphire template prepared with SiO₂ insulation layer; and (b) a top microscope image of the four-probe 3 0 measurement set up for n-Al i.xInx N films;
Figure 6 illustrates (a) measured voltage V, and in-phase V₃ 2; and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A lo.831no. 17N sample with n=5.1 x1018cm3 and undoped GaN/sapphire reference sample at 300 K;
Figure 7 illustrates (a) measured voltage V. and in-phase V₃ m; and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A lo.83Ino. 17N sample with n=1.6x 1 018cm⁻³ and undoped GaN/sapphire reference sample at 300 K;
Figure 8 illustrates (a) measured voltage V. and in-phase V₃ 2; and (b) measured temperature oscillation amplitude (Ta c) as a function of frequency in logarithm scale for n-A lo.79Ino. 21N sample with n=2.2 x101 8cm ~ 3 and undoped GaN/sapphire reference sample at 300 K;
Figure 9 illustrates (a) measured voltage V. and in-phase V₃); and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A o.891no.11 N sample with n =1.1 x 101 8cm -3 and undoped GaN/sapphire reference sample at 300 K;
Figure 10 illustrated the measured thermal conductivities for Al ixInx N alloys with various In-contents (x) from x=0.11 up to x=0.2134 at T =3 00K; and
Figure 11 illustrates the Z*T values for Al ixInx N alloys with various In-contents (x) from x=0.11 up to x = 0.2134 at T = 300K. Detailed Description [0019] A preferred embodiment, and results of testing various aspects of same, is now presented. In accordance with this preferred embodiment, an A …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermoelectric material, comprising: a substrate formed of any one of the group comprising GaN, AlN, InGaN, Si, ZnO, and SiC; and single crystal C-plane A l InN semiconductor material grown directly on said substrate.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material is grown on said substrate using metalorganic vapor phase epitaxy.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material is grown on said substrate by lattice-matching said single crystal C-plane A lI nN semiconductor material to said substrate.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material has an In-content in the range of about 5 % to about 50%.
1854473 1 04/19/2016 PA TENT Docket No. 355940.0009 1 Application No. 12/963,136 Page 3 canceled
(Withdrawn-Currently amended) A method of fabricating a thermoelectric material comprising: forming a substrate of any one of the group comprising GaN, AlN, InGaN, Si, ZnO, and SiC; and forming a single crystal C-plane A l InN semiconductor material directly on said substrate.
4473 1 04/19/2016 PA TENT Docket No. 355940.0009 1 Application No. 12/963,136 Page 4
Layer stacks claimed or described, ordered top of device to substrate.
thermoelectric material
AlInN/GaN/sapphire thermoelectric structure
Materials described outside the worked examples.
single crystal C-plane AlInN
AlInN
substrate (GaN, AlN, InGaN, Si, ZnO, or SiC)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates XRD rocking curves in c-axis for n-Al i..xInx N thin films grown on GaN/sapphire template;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Z*T for n-AlInN alloys with In-content 11% to 21.34% | 0.391–0.532 | AlInN |
thermal conductivity of Al0.79In0.21N (x=0.2134) | 1.62 |
Related documents with shared materials, methods, properties, or citations.
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
SELF-DENSIFYING INTERCONNECTION BETWEEN A HIGH-TEMPERATURE SEMICONDUCTOR DEVICE SELECTED FROM GaN OR SiC AND A SUBSTRATE
Patent
Atlas literature
Patent
US 9,525,117Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates XRD rocking curves in c-axis for n-Al i..xInx N thin films grown on GaN/sapphire template;
Figure 2 illustrates the measured electron mobility for Al i..xInx N alloys with various In-content (x) from x= 0. 11 up to x = 0.2134 at T = 300K;
Figure 3 illustrates (a) the set up for the thermal gradient method for Seebeck voltage measurements of A l InN samples; (b) Seebeck voltage as a function of the 1279011.2 12/8/10 3 Attorney Docket No. 355940.00091 temperature difference and (c) measured Seebeck coefficients for Al ixInx N alloys with …
Figure 4 illustrates the measured power factors for Al i.xInx N alloys with various In-content (x) from x=0.11 up to x = 0.2134 at T=300K;
Figure 5 illustrates (a) a cross sectional schematic of a four-probe 3 w measurement set up for n-Al i.xInx N films grown on GaN/sapphire template prepared with SiO₂ insulation layer; and (b) a top microscope image of the four-probe 3 0 measurement set up for n-Al i.xInx N films;
Figure 6 illustrates (a) measured voltage V, and in-phase V₃ 2; and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A lo.831no. 17N sample with n=5.1 x1018cm3 and undoped GaN/sapphire reference sample at 300 K;
Figure 7 illustrates (a) measured voltage V. and in-phase V₃ m; and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A lo.83Ino. 17N sample with n=1.6x 1 018cm⁻³ and undoped GaN/sapphire reference sample at 300 K;
Figure 8 illustrates (a) measured voltage V. and in-phase V₃ 2; and (b) measured temperature oscillation amplitude (Ta c) as a function of frequency in logarithm scale for n-A lo.79Ino. 21N sample with n=2.2 x101 8cm ~ 3 and undoped GaN/sapphire reference sample at 300 K;
Figure 9 illustrates (a) measured voltage V. and in-phase V₃); and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A o.891no.11 N sample with n =1.1 x 101 8cm -3 and undoped GaN/sapphire reference sample at 300 K;
Figure 10 illustrated the measured thermal conductivities for Al ixInx N alloys with various In-contents (x) from x=0.11 up to x=0.2134 at T =3 00K; and
Figure 11 illustrates the Z*T values for Al ixInx N alloys with various In-contents (x) from x=0.11 up to x = 0.2134 at T = 300K. Detailed Description [0019] A preferred embodiment, and results of testing various aspects of same, is now presented. In accordance with this preferred embodiment, an A …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermoelectric material, comprising: a substrate formed of any one of the group comprising GaN, AlN, InGaN, Si, ZnO, and SiC; and single crystal C-plane A l InN semiconductor material grown directly on said substrate.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material is grown on said substrate using metalorganic vapor phase epitaxy.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material is grown on said substrate by lattice-matching said single crystal C-plane A lI nN semiconductor material to said substrate.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material has an In-content in the range of about 5 % to about 50%.
1854473 1 04/19/2016 PA TENT Docket No. 355940.0009 1 Application No. 12/963,136 Page 3 canceled
(Withdrawn-Currently amended) A method of fabricating a thermoelectric material comprising: forming a substrate of any one of the group comprising GaN, AlN, InGaN, Si, ZnO, and SiC; and forming a single crystal C-plane A l InN semiconductor material directly on said substrate.
4473 1 04/19/2016 PA TENT Docket No. 355940.0009 1 Application No. 12/963,136 Page 4
Layer stacks claimed or described, ordered top of device to substrate.
thermoelectric material
AlInN/GaN/sapphire thermoelectric structure
Materials described outside the worked examples.
single crystal C-plane AlInN
AlInN
substrate (GaN, AlN, InGaN, Si, ZnO, or SiC)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates XRD rocking curves in c-axis for n-Al i..xInx N thin films grown on GaN/sapphire template;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Z*T for n-AlInN alloys with In-content 11% to 21.34% | 0.391–0.532 | AlInN |
thermal conductivity of Al0.79In0.21N (x=0.2134) | 1.62 |
Related documents with shared materials, methods, properties, or citations.
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
SELF-DENSIFYING INTERCONNECTION BETWEEN A HIGH-TEMPERATURE SEMICONDUCTOR DEVICE SELECTED FROM GaN OR SiC AND A SUBSTRATE
Patent
Atlas literature
Patent
US 9,525,117Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates XRD rocking curves in c-axis for n-Al i..xInx N thin films grown on GaN/sapphire template;
Figure 2 illustrates the measured electron mobility for Al i..xInx N alloys with various In-content (x) from x= 0. 11 up to x = 0.2134 at T = 300K;
Figure 3 illustrates (a) the set up for the thermal gradient method for Seebeck voltage measurements of A l InN samples; (b) Seebeck voltage as a function of the 1279011.2 12/8/10 3 Attorney Docket No. 355940.00091 temperature difference and (c) measured Seebeck coefficients for Al ixInx N alloys with …
Figure 4 illustrates the measured power factors for Al i.xInx N alloys with various In-content (x) from x=0.11 up to x = 0.2134 at T=300K;
Figure 5 illustrates (a) a cross sectional schematic of a four-probe 3 w measurement set up for n-Al i.xInx N films grown on GaN/sapphire template prepared with SiO₂ insulation layer; and (b) a top microscope image of the four-probe 3 0 measurement set up for n-Al i.xInx N films;
Figure 6 illustrates (a) measured voltage V, and in-phase V₃ 2; and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A lo.831no. 17N sample with n=5.1 x1018cm3 and undoped GaN/sapphire reference sample at 300 K;
Figure 7 illustrates (a) measured voltage V. and in-phase V₃ m; and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A lo.83Ino. 17N sample with n=1.6x 1 018cm⁻³ and undoped GaN/sapphire reference sample at 300 K;
Figure 8 illustrates (a) measured voltage V. and in-phase V₃ 2; and (b) measured temperature oscillation amplitude (Ta c) as a function of frequency in logarithm scale for n-A lo.79Ino. 21N sample with n=2.2 x101 8cm ~ 3 and undoped GaN/sapphire reference sample at 300 K;
Figure 9 illustrates (a) measured voltage V. and in-phase V₃); and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A o.891no.11 N sample with n =1.1 x 101 8cm -3 and undoped GaN/sapphire reference sample at 300 K;
Figure 10 illustrated the measured thermal conductivities for Al ixInx N alloys with various In-contents (x) from x=0.11 up to x=0.2134 at T =3 00K; and
Figure 11 illustrates the Z*T values for Al ixInx N alloys with various In-contents (x) from x=0.11 up to x = 0.2134 at T = 300K. Detailed Description [0019] A preferred embodiment, and results of testing various aspects of same, is now presented. In accordance with this preferred embodiment, an A …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermoelectric material, comprising: a substrate formed of any one of the group comprising GaN, AlN, InGaN, Si, ZnO, and SiC; and single crystal C-plane A l InN semiconductor material grown directly on said substrate.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material is grown on said substrate using metalorganic vapor phase epitaxy.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material is grown on said substrate by lattice-matching said single crystal C-plane A lI nN semiconductor material to said substrate.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material has an In-content in the range of about 5 % to about 50%.
1854473 1 04/19/2016 PA TENT Docket No. 355940.0009 1 Application No. 12/963,136 Page 3 canceled
(Withdrawn-Currently amended) A method of fabricating a thermoelectric material comprising: forming a substrate of any one of the group comprising GaN, AlN, InGaN, Si, ZnO, and SiC; and forming a single crystal C-plane A l InN semiconductor material directly on said substrate.
4473 1 04/19/2016 PA TENT Docket No. 355940.0009 1 Application No. 12/963,136 Page 4
Layer stacks claimed or described, ordered top of device to substrate.
thermoelectric material
AlInN/GaN/sapphire thermoelectric structure
Materials described outside the worked examples.
single crystal C-plane AlInN
AlInN
substrate (GaN, AlN, InGaN, Si, ZnO, or SiC)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates XRD rocking curves in c-axis for n-Al i..xInx N thin films grown on GaN/sapphire template;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Z*T for n-AlInN alloys with In-content 11% to 21.34% | 0.391–0.532 | AlInN |
thermal conductivity of Al0.79In0.21N (x=0.2134) | 1.62 |
Related documents with shared materials, methods, properties, or citations.
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
SELF-DENSIFYING INTERCONNECTION BETWEEN A HIGH-TEMPERATURE SEMICONDUCTOR DEVICE SELECTED FROM GaN OR SiC AND A SUBSTRATE
Patent
Atlas literature
Patent
US 9,525,117Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates XRD rocking curves in c-axis for n-Al i..xInx N thin films grown on GaN/sapphire template;
Figure 2 illustrates the measured electron mobility for Al i..xInx N alloys with various In-content (x) from x= 0. 11 up to x = 0.2134 at T = 300K;
Figure 3 illustrates (a) the set up for the thermal gradient method for Seebeck voltage measurements of A l InN samples; (b) Seebeck voltage as a function of the 1279011.2 12/8/10 3 Attorney Docket No. 355940.00091 temperature difference and (c) measured Seebeck coefficients for Al ixInx N alloys with …
Figure 4 illustrates the measured power factors for Al i.xInx N alloys with various In-content (x) from x=0.11 up to x = 0.2134 at T=300K;
Figure 5 illustrates (a) a cross sectional schematic of a four-probe 3 w measurement set up for n-Al i.xInx N films grown on GaN/sapphire template prepared with SiO₂ insulation layer; and (b) a top microscope image of the four-probe 3 0 measurement set up for n-Al i.xInx N films;
Figure 6 illustrates (a) measured voltage V, and in-phase V₃ 2; and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A lo.831no. 17N sample with n=5.1 x1018cm3 and undoped GaN/sapphire reference sample at 300 K;
Figure 7 illustrates (a) measured voltage V. and in-phase V₃ m; and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A lo.83Ino. 17N sample with n=1.6x 1 018cm⁻³ and undoped GaN/sapphire reference sample at 300 K;
Figure 8 illustrates (a) measured voltage V. and in-phase V₃ 2; and (b) measured temperature oscillation amplitude (Ta c) as a function of frequency in logarithm scale for n-A lo.79Ino. 21N sample with n=2.2 x101 8cm ~ 3 and undoped GaN/sapphire reference sample at 300 K;
Figure 9 illustrates (a) measured voltage V. and in-phase V₃); and (b) measured temperature oscillation amplitude (T ac) as a function of frequency in logarithm scale for n-A o.891no.11 N sample with n =1.1 x 101 8cm -3 and undoped GaN/sapphire reference sample at 300 K;
Figure 10 illustrated the measured thermal conductivities for Al ixInx N alloys with various In-contents (x) from x=0.11 up to x=0.2134 at T =3 00K; and
Figure 11 illustrates the Z*T values for Al ixInx N alloys with various In-contents (x) from x=0.11 up to x = 0.2134 at T = 300K. Detailed Description [0019] A preferred embodiment, and results of testing various aspects of same, is now presented. In accordance with this preferred embodiment, an A …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermoelectric material, comprising: a substrate formed of any one of the group comprising GaN, AlN, InGaN, Si, ZnO, and SiC; and single crystal C-plane A l InN semiconductor material grown directly on said substrate.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material is grown on said substrate using metalorganic vapor phase epitaxy.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material is grown on said substrate by lattice-matching said single crystal C-plane A lI nN semiconductor material to said substrate.
A thermoelectric material as set forth in claim 1, wherein said single crystal C-plane A l InN semiconductor material has an In-content in the range of about 5 % to about 50%.
1854473 1 04/19/2016 PA TENT Docket No. 355940.0009 1 Application No. 12/963,136 Page 3 canceled
(Withdrawn-Currently amended) A method of fabricating a thermoelectric material comprising: forming a substrate of any one of the group comprising GaN, AlN, InGaN, Si, ZnO, and SiC; and forming a single crystal C-plane A l InN semiconductor material directly on said substrate.
4473 1 04/19/2016 PA TENT Docket No. 355940.0009 1 Application No. 12/963,136 Page 4
Layer stacks claimed or described, ordered top of device to substrate.
thermoelectric material
AlInN/GaN/sapphire thermoelectric structure
Materials described outside the worked examples.
single crystal C-plane AlInN
AlInN
substrate (GaN, AlN, InGaN, Si, ZnO, or SiC)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates XRD rocking curves in c-axis for n-Al i..xInx N thin films grown on GaN/sapphire template;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Z*T for n-AlInN alloys with In-content 11% to 21.34% | 0.391–0.532 | AlInN |
thermal conductivity of Al0.79In0.21N (x=0.2134) | 1.62 |
Related documents with shared materials, methods, properties, or citations.
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
SELF-DENSIFYING INTERCONNECTION BETWEEN A HIGH-TEMPERATURE SEMICONDUCTOR DEVICE SELECTED FROM GaN OR SiC AND A SUBSTRATE
GaN template
GaN
sapphire substrate
Al₂O₃
Al0.83In0.17N
n-Al0.89In0.11N
Al0.89In0.11N
n-Al0.79In0.21N
Al0.79In0.21N
SiO₂ insulation layer
SiO₂
Ti/Au metal heater contacts
Figure 2 illustrates the measured electron mobility for Al i..xInx N alloys with various In-content (x) from x= 0. 11 up to x = 0.2134 at T = 300K;
Al0.79In0.21N |
electron mobility of AlInN from Hall measurement (Van der Pauw) | 289 | AlInN |
carrier mobility of Al0.83In0.17N (n=5.1e18 cm-3) | 290 | Al0.83In0.17N |
carrier mobility of Al0.83In0.17N (n=1.6e18 cm-3) | 462 | Al0.83In0.17N |
Seebeck coefficient range for AlInN alloys (In-content 11% to 21.34%) | -0.0006012–-0.00032 | AlInN |
Seebeck coefficient of Al0.83In0.17N (n=5.1e18 cm-3)-highest value | -0.0006012 | Al0.83In0.17N |
power factor of Al0.83In0.17N (n=5.1e18 cm-3) | 0.00864 | Al0.83In0.17N |
power factor of Al0.83In0.17N (n=1.6e18 cm-3) | 0.0023 | Al0.83In0.17N |
power factor of Al0.89In0.11N (n=1.1e18 cm-3) | 0.000477 | Al0.89In0.11N |
power factor of Al0.79In0.21N (n=2.2e18 cm-3) | 0.00211 | Al0.79In0.21N |
lattice mismatch Δa/a of Al0.83In0.17N to GaN in a-axis | -0.18 | Al0.83In0.17N |
GaN template
GaN
sapphire substrate
Al₂O₃
Al0.83In0.17N
n-Al0.89In0.11N
Al0.89In0.11N
n-Al0.79In0.21N
Al0.79In0.21N
SiO₂ insulation layer
SiO₂
Ti/Au metal heater contacts
Figure 2 illustrates the measured electron mobility for Al i..xInx N alloys with various In-content (x) from x= 0. 11 up to x = 0.2134 at T = 300K;
Al0.79In0.21N |
electron mobility of AlInN from Hall measurement (Van der Pauw) | 289 | AlInN |
carrier mobility of Al0.83In0.17N (n=5.1e18 cm-3) | 290 | Al0.83In0.17N |
carrier mobility of Al0.83In0.17N (n=1.6e18 cm-3) | 462 | Al0.83In0.17N |
Seebeck coefficient range for AlInN alloys (In-content 11% to 21.34%) | -0.0006012–-0.00032 | AlInN |
Seebeck coefficient of Al0.83In0.17N (n=5.1e18 cm-3)-highest value | -0.0006012 | Al0.83In0.17N |
power factor of Al0.83In0.17N (n=5.1e18 cm-3) | 0.00864 | Al0.83In0.17N |
power factor of Al0.83In0.17N (n=1.6e18 cm-3) | 0.0023 | Al0.83In0.17N |
power factor of Al0.89In0.11N (n=1.1e18 cm-3) | 0.000477 | Al0.89In0.11N |
power factor of Al0.79In0.21N (n=2.2e18 cm-3) | 0.00211 | Al0.79In0.21N |
lattice mismatch Δa/a of Al0.83In0.17N to GaN in a-axis | -0.18 | Al0.83In0.17N |
GaN template
GaN
sapphire substrate
Al₂O₃
Al0.83In0.17N
n-Al0.89In0.11N
Al0.89In0.11N
n-Al0.79In0.21N
Al0.79In0.21N
SiO₂ insulation layer
SiO₂
Ti/Au metal heater contacts
Figure 2 illustrates the measured electron mobility for Al i..xInx N alloys with various In-content (x) from x= 0. 11 up to x = 0.2134 at T = 300K;
Al0.79In0.21N |
electron mobility of AlInN from Hall measurement (Van der Pauw) | 289 | AlInN |
carrier mobility of Al0.83In0.17N (n=5.1e18 cm-3) | 290 | Al0.83In0.17N |
carrier mobility of Al0.83In0.17N (n=1.6e18 cm-3) | 462 | Al0.83In0.17N |
Seebeck coefficient range for AlInN alloys (In-content 11% to 21.34%) | -0.0006012–-0.00032 | AlInN |
Seebeck coefficient of Al0.83In0.17N (n=5.1e18 cm-3)-highest value | -0.0006012 | Al0.83In0.17N |
power factor of Al0.83In0.17N (n=5.1e18 cm-3) | 0.00864 | Al0.83In0.17N |
power factor of Al0.83In0.17N (n=1.6e18 cm-3) | 0.0023 | Al0.83In0.17N |
power factor of Al0.89In0.11N (n=1.1e18 cm-3) | 0.000477 | Al0.89In0.11N |
power factor of Al0.79In0.21N (n=2.2e18 cm-3) | 0.00211 | Al0.79In0.21N |
lattice mismatch Δa/a of Al0.83In0.17N to GaN in a-axis | -0.18 | Al0.83In0.17N |
GaN template
GaN
sapphire substrate
Al₂O₃
Al0.83In0.17N
n-Al0.89In0.11N
Al0.89In0.11N
n-Al0.79In0.21N
Al0.79In0.21N
SiO₂ insulation layer
SiO₂
Ti/Au metal heater contacts
Figure 2 illustrates the measured electron mobility for Al i..xInx N alloys with various In-content (x) from x= 0. 11 up to x = 0.2134 at T = 300K;
Al0.79In0.21N |
electron mobility of AlInN from Hall measurement (Van der Pauw) | 289 | AlInN |
carrier mobility of Al0.83In0.17N (n=5.1e18 cm-3) | 290 | Al0.83In0.17N |
carrier mobility of Al0.83In0.17N (n=1.6e18 cm-3) | 462 | Al0.83In0.17N |
Seebeck coefficient range for AlInN alloys (In-content 11% to 21.34%) | -0.0006012–-0.00032 | AlInN |
Seebeck coefficient of Al0.83In0.17N (n=5.1e18 cm-3)-highest value | -0.0006012 | Al0.83In0.17N |
power factor of Al0.83In0.17N (n=5.1e18 cm-3) | 0.00864 | Al0.83In0.17N |
power factor of Al0.83In0.17N (n=1.6e18 cm-3) | 0.0023 | Al0.83In0.17N |
power factor of Al0.89In0.11N (n=1.1e18 cm-3) | 0.000477 | Al0.89In0.11N |
power factor of Al0.79In0.21N (n=2.2e18 cm-3) | 0.00211 | Al0.79In0.21N |
lattice mismatch Δa/a of Al0.83In0.17N to GaN in a-axis | -0.18 | Al0.83In0.17N |