Patent
US 7,794,541GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME
Hiroyuki Shibata
US
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Patent
Atlas literature
Patent
US 7,794,541Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/282,961 Reply to Office Action of Claim 36: The method according to claim 11, wherein the underlying substrate is a semiconductor substrate having a crystal structure of a cubic system or a hexagonal system.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
A sapphire substrate (430 µm thickness, 2 inches diameter, (0001) surface) was prepared as an underlying substrate, cleaned with organic solvent, then an underlying GaN layer (2 µm thick) was grown by MOCVD. Subsequently the substrate was placed in an HVPE reaction chamber for further GaN growth.
1 material
The GaN single crystal obtained was evaluated by laser flash measurement. Thermal diffusivity at room temperature (25°C) was 124 mm²/sec, and thermal conductivity was 371 W/(m·K) at room temperature.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal conductivity at 25°C (Example, laser flash) | 371 W/(m·K) | GaN |
thermal diffusivity at room temperature (25°C, laser flash) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,794,541Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/282,961 Reply to Office Action of Claim 36: The method according to claim 11, wherein the underlying substrate is a semiconductor substrate having a crystal structure of a cubic system or a hexagonal system.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
A sapphire substrate (430 µm thickness, 2 inches diameter, (0001) surface) was prepared as an underlying substrate, cleaned with organic solvent, then an underlying GaN layer (2 µm thick) was grown by MOCVD. Subsequently the substrate was placed in an HVPE reaction chamber for further GaN growth.
1 material
The GaN single crystal obtained was evaluated by laser flash measurement. Thermal diffusivity at room temperature (25°C) was 124 mm²/sec, and thermal conductivity was 371 W/(m·K) at room temperature.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal conductivity at 25°C (Example, laser flash) | 371 W/(m·K) | GaN |
thermal diffusivity at room temperature (25°C, laser flash) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,794,541Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/282,961 Reply to Office Action of Claim 36: The method according to claim 11, wherein the underlying substrate is a semiconductor substrate having a crystal structure of a cubic system or a hexagonal system.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
A sapphire substrate (430 µm thickness, 2 inches diameter, (0001) surface) was prepared as an underlying substrate, cleaned with organic solvent, then an underlying GaN layer (2 µm thick) was grown by MOCVD. Subsequently the substrate was placed in an HVPE reaction chamber for further GaN growth.
1 material
The GaN single crystal obtained was evaluated by laser flash measurement. Thermal diffusivity at room temperature (25°C) was 124 mm²/sec, and thermal conductivity was 371 W/(m·K) at room temperature.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal conductivity at 25°C (Example, laser flash) | 371 W/(m·K) | GaN |
thermal diffusivity at room temperature (25°C, laser flash) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,794,541Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/282,961 Reply to Office Action of Claim 36: The method according to claim 11, wherein the underlying substrate is a semiconductor substrate having a crystal structure of a cubic system or a hexagonal system.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
A sapphire substrate (430 µm thickness, 2 inches diameter, (0001) surface) was prepared as an underlying substrate, cleaned with organic solvent, then an underlying GaN layer (2 µm thick) was grown by MOCVD. Subsequently the substrate was placed in an HVPE reaction chamber for further GaN growth.
1 material
The GaN single crystal obtained was evaluated by laser flash measurement. Thermal diffusivity at room temperature (25°C) was 124 mm²/sec, and thermal conductivity was 371 W/(m·K) at room temperature.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal conductivity at 25°C (Example, laser flash) | 371 W/(m·K) | GaN |
thermal diffusivity at room temperature (25°C, laser flash) |
Related documents with shared materials, methods, properties, or citations.
| 124 mm²/sec |
GaN |
thermal conductivity at 25°C – claimed minimum (2nd aspect) | ≥ 280 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed minimum (3rd aspect) | ≥ 300 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (4th aspect) | 300–380 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (5th aspect) | 330–380 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (6th aspect) | 350–380 W/(m·K) | GaN |
(002)-plane XRD rocking curve half-width – claimed max (7th aspect) | ≤ 300 arcsec | GaN |
(102)-plane XRD rocking curve half-width – claimed max (8th aspect) | ≤ 500 arcsec | GaN |
oxygen concentration – claimed max (9th aspect) | ≤ 500000000000000000 atoms/cm³ | GaN |
carbon concentration – claimed max (10th aspect) | ≤ 100000000000000000 atoms/cm³ | GaN |
hydrogen concentration – claimed max (11th aspect) | ≤ 1000000000000000000 atoms/cm³ | GaN |
| 124 mm²/sec |
GaN |
thermal conductivity at 25°C – claimed minimum (2nd aspect) | ≥ 280 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed minimum (3rd aspect) | ≥ 300 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (4th aspect) | 300–380 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (5th aspect) | 330–380 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (6th aspect) | 350–380 W/(m·K) | GaN |
(002)-plane XRD rocking curve half-width – claimed max (7th aspect) | ≤ 300 arcsec | GaN |
(102)-plane XRD rocking curve half-width – claimed max (8th aspect) | ≤ 500 arcsec | GaN |
oxygen concentration – claimed max (9th aspect) | ≤ 500000000000000000 atoms/cm³ | GaN |
carbon concentration – claimed max (10th aspect) | ≤ 100000000000000000 atoms/cm³ | GaN |
hydrogen concentration – claimed max (11th aspect) | ≤ 1000000000000000000 atoms/cm³ | GaN |
| 124 mm²/sec |
GaN |
thermal conductivity at 25°C – claimed minimum (2nd aspect) | ≥ 280 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed minimum (3rd aspect) | ≥ 300 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (4th aspect) | 300–380 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (5th aspect) | 330–380 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (6th aspect) | 350–380 W/(m·K) | GaN |
(002)-plane XRD rocking curve half-width – claimed max (7th aspect) | ≤ 300 arcsec | GaN |
(102)-plane XRD rocking curve half-width – claimed max (8th aspect) | ≤ 500 arcsec | GaN |
oxygen concentration – claimed max (9th aspect) | ≤ 500000000000000000 atoms/cm³ | GaN |
carbon concentration – claimed max (10th aspect) | ≤ 100000000000000000 atoms/cm³ | GaN |
hydrogen concentration – claimed max (11th aspect) | ≤ 1000000000000000000 atoms/cm³ | GaN |
| 124 mm²/sec |
GaN |
thermal conductivity at 25°C – claimed minimum (2nd aspect) | ≥ 280 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed minimum (3rd aspect) | ≥ 300 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (4th aspect) | 300–380 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (5th aspect) | 330–380 W/(m·K) | GaN |
thermal conductivity at 25°C – claimed range (6th aspect) | 350–380 W/(m·K) | GaN |
(002)-plane XRD rocking curve half-width – claimed max (7th aspect) | ≤ 300 arcsec | GaN |
(102)-plane XRD rocking curve half-width – claimed max (8th aspect) | ≤ 500 arcsec | GaN |
oxygen concentration – claimed max (9th aspect) | ≤ 500000000000000000 atoms/cm³ | GaN |
carbon concentration – claimed max (10th aspect) | ≤ 100000000000000000 atoms/cm³ | GaN |
hydrogen concentration – claimed max (11th aspect) | ≤ 1000000000000000000 atoms/cm³ | GaN |