Research paper
Experimental GrowthExperimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thin Film Thickness | TiN thickness on sapphire | 5.03nm | — | |||
| Thin Film Thickness | TiN thickness on hBN | 4.57nm | — | |||
| Thin Film Thickness | hBN thickness | 3nm | — | |||
| Plasma Energy | TiN plasmon energy | 2.71eV | — | |||
| Plasma Energy | TiN plasmon energy | 2.65eV | — | |||
| Epsilon Zero Crossing Energy | ε1 = 0 energy | 2.42eV | — | |||
| Epsilon Zero Crossing Energy | ε1 = 0 energy | 2.15eV | — | |||
| Optical Damping Factor | TiN damping factor | 0.359eV | — | |||
| Optical Damping Factor | TiN damping factor | 0.567eV | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 578nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 579nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 575nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 622nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 513nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 525nm | — | |||
| Plasma Energy | TiN plasmon energy | 2.65eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thin Film Thickness | TiN thickness on sapphire | 5.03nm | — | |||
| Thin Film Thickness | TiN thickness on hBN | 4.57nm | — | |||
| Thin Film Thickness | hBN thickness | 3nm | — | |||
| Plasma Energy | TiN plasmon energy | 2.71eV | — | |||
| Plasma Energy | TiN plasmon energy | 2.65eV | — | |||
| Epsilon Zero Crossing Energy | ε1 = 0 energy | 2.42eV | — | |||
| Epsilon Zero Crossing Energy | ε1 = 0 energy | 2.15eV | — | |||
| Optical Damping Factor | TiN damping factor | 0.359eV | — | |||
| Optical Damping Factor | TiN damping factor | 0.567eV | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 578nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 579nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 575nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 622nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 513nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 525nm | — | |||
| Plasma Energy | TiN plasmon energy | 2.65eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thin Film Thickness | TiN thickness on sapphire | 5.03nm | — | |||
| Thin Film Thickness | TiN thickness on hBN | 4.57nm | — | |||
| Thin Film Thickness | hBN thickness | 3nm | — | |||
| Plasma Energy | TiN plasmon energy | 2.71eV | — | |||
| Plasma Energy | TiN plasmon energy | 2.65eV | — | |||
| Epsilon Zero Crossing Energy | ε1 = 0 energy | 2.42eV | — | |||
| Epsilon Zero Crossing Energy | ε1 = 0 energy | 2.15eV | — | |||
| Optical Damping Factor | TiN damping factor | 0.359eV | — | |||
| Optical Damping Factor | TiN damping factor | 0.567eV | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 578nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 579nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 575nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 622nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 513nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 525nm | — | |||
| Plasma Energy | TiN plasmon energy | 2.65eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thin Film Thickness | TiN thickness on sapphire | 5.03nm | — | |||
| Thin Film Thickness | TiN thickness on hBN | 4.57nm | — | |||
| Thin Film Thickness | hBN thickness | 3nm | — | |||
| Plasma Energy | TiN plasmon energy | 2.71eV | — | |||
| Plasma Energy | TiN plasmon energy | 2.65eV | — | |||
| Epsilon Zero Crossing Energy | ε1 = 0 energy | 2.42eV | — | |||
| Epsilon Zero Crossing Energy | ε1 = 0 energy | 2.15eV | — | |||
| Optical Damping Factor | TiN damping factor | 0.359eV | — | |||
| Optical Damping Factor | TiN damping factor | 0.567eV | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 578nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 579nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 575nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 622nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 513nm | — | |||
| Epsilon Zero Crossing Wavelength | ε1 = 0 wavelength | 525nm | — | |||
| Plasma Energy | TiN plasmon energy | 2.65eV | — |