Patent details
Patent
US 12,183,575 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A, according to the method of fabri- cating a gallium nitride substrate, a first gallium nitride layer 110 is formed on a substrate 100 using a …
FIGS. 2A to 2C are images taken using a cross-sectional transmission electron microscope after 5 implanting hydrogen ions on the surface of the first gallium …
FIG. 3 shows white-light scanning interfer- ometry (WSI) and scanning electron microscope (SEM) analysis of the surface of the first gallium nitride layer. …
FIG. 4 shows the surface state of the first gallium nitride layer according to change in the implantation amount of hydrogen ions observed by differential …
FIG. 5, groups 500 to 503 each show the front and back of the separated second gallium nitride layer. In the case of the group 500, hydrogen ions are not …
FIGS. 6C and 6D show transmission electron microscope images of the separation layer when hydrogen ions at a dose of 2.0 E₁₇ H+/cm2 are implanted, and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, comprising: a step of forming a first gallium nitride layer on a substrate; a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer; a step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer; a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge; and a step of separating the second gallium nitride layer from the first gallium nitride layer having the ground edge, wherein the step of implanting hydrogen ions into the first gallium nitride layer to form the separation layer com-prises a step of implanting hydrogen ions at a dose of 1.75 E₁₇ H+/cm2 to 2.0 E₁₇ H+/cm2 into the first gallium nitride layer and then performing heat treat-ment at a temperature of about 500° C. for about 30 minutes, to form the separation layer and to form a plurality of cavities inside the separation layer, the step of forming a second gallium nitride layer com-prises a step of growing the second gallium nitride layer of about 800 µm on the first gallium nitride layer having the ground edge using the first gallium nitride layer having the ground edge as a seed layer, the step of separating the second gallium nitride layer comprises a step of separating the second gallium nitride layer at room temperature based on the cavities, the step of implanting is performed under the conditions where implantation of hydrogen ions is carried out at an implantation energy of about 70 keV, and a projection range is about 270 nm, and the second gallium nitride layer, under the conditions of 1.75E₁₇ H+/cm2 and 2.0E₁₇ H+/cm2, is separated, with 95% or more of the area.
The method according to claim 1, wherein the step of forming the first gallium nitride layer on the substrate comprises a step of forming the first gallium nitride layer using a metal-organic chemical vapor deposition (MOCVD) process.
The method according to claim 1, wherein the step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer comprises a step of grinding edges of the first gallium nitride layer and the substrate to suppress growth of polycrystalline gallium nitride from the edges of the first gallium nitride layer and the substrate or to weaken adhesion between the polycrystalline gallium nitride and the substrate.
The method according to claim 1, wherein the substrate is formed using at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC).
The method according to claim 1, wherein the step of forming the second gallium nitride layer on the first gallium nitride layer having the ground edge comprises a step of forming the second gallium nitride layer using a hydride vapor phase epitaxy (HVPE) process. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
first gallium nitride layer
GaN
hydrogen ions
H+
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A to 2C are images taken using a cross-sectional transmission electron microscope after 5 implanting hydrogen ions on the surface of the first gallium …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TDD of GaN substrate relative to MOCVD-GaN template | — | GaN |
Thermal conductivity of GaN substrate relative to MOCVD-GaN template | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 12,183,575 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A, according to the method of fabri- cating a gallium nitride substrate, a first gallium nitride layer 110 is formed on a substrate 100 using a …
FIGS. 2A to 2C are images taken using a cross-sectional transmission electron microscope after 5 implanting hydrogen ions on the surface of the first gallium …
FIG. 3 shows white-light scanning interfer- ometry (WSI) and scanning electron microscope (SEM) analysis of the surface of the first gallium nitride layer. …
FIG. 4 shows the surface state of the first gallium nitride layer according to change in the implantation amount of hydrogen ions observed by differential …
FIG. 5, groups 500 to 503 each show the front and back of the separated second gallium nitride layer. In the case of the group 500, hydrogen ions are not …
FIGS. 6C and 6D show transmission electron microscope images of the separation layer when hydrogen ions at a dose of 2.0 E₁₇ H+/cm2 are implanted, and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, comprising: a step of forming a first gallium nitride layer on a substrate; a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer; a step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer; a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge; and a step of separating the second gallium nitride layer from the first gallium nitride layer having the ground edge, wherein the step of implanting hydrogen ions into the first gallium nitride layer to form the separation layer com-prises a step of implanting hydrogen ions at a dose of 1.75 E₁₇ H+/cm2 to 2.0 E₁₇ H+/cm2 into the first gallium nitride layer and then performing heat treat-ment at a temperature of about 500° C. for about 30 minutes, to form the separation layer and to form a plurality of cavities inside the separation layer, the step of forming a second gallium nitride layer com-prises a step of growing the second gallium nitride layer of about 800 µm on the first gallium nitride layer having the ground edge using the first gallium nitride layer having the ground edge as a seed layer, the step of separating the second gallium nitride layer comprises a step of separating the second gallium nitride layer at room temperature based on the cavities, the step of implanting is performed under the conditions where implantation of hydrogen ions is carried out at an implantation energy of about 70 keV, and a projection range is about 270 nm, and the second gallium nitride layer, under the conditions of 1.75E₁₇ H+/cm2 and 2.0E₁₇ H+/cm2, is separated, with 95% or more of the area.
The method according to claim 1, wherein the step of forming the first gallium nitride layer on the substrate comprises a step of forming the first gallium nitride layer using a metal-organic chemical vapor deposition (MOCVD) process.
The method according to claim 1, wherein the step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer comprises a step of grinding edges of the first gallium nitride layer and the substrate to suppress growth of polycrystalline gallium nitride from the edges of the first gallium nitride layer and the substrate or to weaken adhesion between the polycrystalline gallium nitride and the substrate.
The method according to claim 1, wherein the substrate is formed using at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC).
The method according to claim 1, wherein the step of forming the second gallium nitride layer on the first gallium nitride layer having the ground edge comprises a step of forming the second gallium nitride layer using a hydride vapor phase epitaxy (HVPE) process. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
first gallium nitride layer
GaN
hydrogen ions
H+
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A to 2C are images taken using a cross-sectional transmission electron microscope after 5 implanting hydrogen ions on the surface of the first gallium …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TDD of GaN substrate relative to MOCVD-GaN template | — | GaN |
Thermal conductivity of GaN substrate relative to MOCVD-GaN template | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 12,183,575 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A, according to the method of fabri- cating a gallium nitride substrate, a first gallium nitride layer 110 is formed on a substrate 100 using a …
FIGS. 2A to 2C are images taken using a cross-sectional transmission electron microscope after 5 implanting hydrogen ions on the surface of the first gallium …
FIG. 3 shows white-light scanning interfer- ometry (WSI) and scanning electron microscope (SEM) analysis of the surface of the first gallium nitride layer. …
FIG. 4 shows the surface state of the first gallium nitride layer according to change in the implantation amount of hydrogen ions observed by differential …
FIG. 5, groups 500 to 503 each show the front and back of the separated second gallium nitride layer. In the case of the group 500, hydrogen ions are not …
FIGS. 6C and 6D show transmission electron microscope images of the separation layer when hydrogen ions at a dose of 2.0 E₁₇ H+/cm2 are implanted, and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, comprising: a step of forming a first gallium nitride layer on a substrate; a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer; a step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer; a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge; and a step of separating the second gallium nitride layer from the first gallium nitride layer having the ground edge, wherein the step of implanting hydrogen ions into the first gallium nitride layer to form the separation layer com-prises a step of implanting hydrogen ions at a dose of 1.75 E₁₇ H+/cm2 to 2.0 E₁₇ H+/cm2 into the first gallium nitride layer and then performing heat treat-ment at a temperature of about 500° C. for about 30 minutes, to form the separation layer and to form a plurality of cavities inside the separation layer, the step of forming a second gallium nitride layer com-prises a step of growing the second gallium nitride layer of about 800 µm on the first gallium nitride layer having the ground edge using the first gallium nitride layer having the ground edge as a seed layer, the step of separating the second gallium nitride layer comprises a step of separating the second gallium nitride layer at room temperature based on the cavities, the step of implanting is performed under the conditions where implantation of hydrogen ions is carried out at an implantation energy of about 70 keV, and a projection range is about 270 nm, and the second gallium nitride layer, under the conditions of 1.75E₁₇ H+/cm2 and 2.0E₁₇ H+/cm2, is separated, with 95% or more of the area.
The method according to claim 1, wherein the step of forming the first gallium nitride layer on the substrate comprises a step of forming the first gallium nitride layer using a metal-organic chemical vapor deposition (MOCVD) process.
The method according to claim 1, wherein the step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer comprises a step of grinding edges of the first gallium nitride layer and the substrate to suppress growth of polycrystalline gallium nitride from the edges of the first gallium nitride layer and the substrate or to weaken adhesion between the polycrystalline gallium nitride and the substrate.
The method according to claim 1, wherein the substrate is formed using at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC).
The method according to claim 1, wherein the step of forming the second gallium nitride layer on the first gallium nitride layer having the ground edge comprises a step of forming the second gallium nitride layer using a hydride vapor phase epitaxy (HVPE) process. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
first gallium nitride layer
GaN
hydrogen ions
H+
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A to 2C are images taken using a cross-sectional transmission electron microscope after 5 implanting hydrogen ions on the surface of the first gallium …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TDD of GaN substrate relative to MOCVD-GaN template | — | GaN |
Thermal conductivity of GaN substrate relative to MOCVD-GaN template | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 12,183,575 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A, according to the method of fabri- cating a gallium nitride substrate, a first gallium nitride layer 110 is formed on a substrate 100 using a …
FIGS. 2A to 2C are images taken using a cross-sectional transmission electron microscope after 5 implanting hydrogen ions on the surface of the first gallium …
FIG. 3 shows white-light scanning interfer- ometry (WSI) and scanning electron microscope (SEM) analysis of the surface of the first gallium nitride layer. …
FIG. 4 shows the surface state of the first gallium nitride layer according to change in the implantation amount of hydrogen ions observed by differential …
FIG. 5, groups 500 to 503 each show the front and back of the separated second gallium nitride layer. In the case of the group 500, hydrogen ions are not …
FIGS. 6C and 6D show transmission electron microscope images of the separation layer when hydrogen ions at a dose of 2.0 E₁₇ H+/cm2 are implanted, and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, comprising: a step of forming a first gallium nitride layer on a substrate; a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer; a step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer; a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge; and a step of separating the second gallium nitride layer from the first gallium nitride layer having the ground edge, wherein the step of implanting hydrogen ions into the first gallium nitride layer to form the separation layer com-prises a step of implanting hydrogen ions at a dose of 1.75 E₁₇ H+/cm2 to 2.0 E₁₇ H+/cm2 into the first gallium nitride layer and then performing heat treat-ment at a temperature of about 500° C. for about 30 minutes, to form the separation layer and to form a plurality of cavities inside the separation layer, the step of forming a second gallium nitride layer com-prises a step of growing the second gallium nitride layer of about 800 µm on the first gallium nitride layer having the ground edge using the first gallium nitride layer having the ground edge as a seed layer, the step of separating the second gallium nitride layer comprises a step of separating the second gallium nitride layer at room temperature based on the cavities, the step of implanting is performed under the conditions where implantation of hydrogen ions is carried out at an implantation energy of about 70 keV, and a projection range is about 270 nm, and the second gallium nitride layer, under the conditions of 1.75E₁₇ H+/cm2 and 2.0E₁₇ H+/cm2, is separated, with 95% or more of the area.
The method according to claim 1, wherein the step of forming the first gallium nitride layer on the substrate comprises a step of forming the first gallium nitride layer using a metal-organic chemical vapor deposition (MOCVD) process.
The method according to claim 1, wherein the step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer comprises a step of grinding edges of the first gallium nitride layer and the substrate to suppress growth of polycrystalline gallium nitride from the edges of the first gallium nitride layer and the substrate or to weaken adhesion between the polycrystalline gallium nitride and the substrate.
The method according to claim 1, wherein the substrate is formed using at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC).
The method according to claim 1, wherein the step of forming the second gallium nitride layer on the first gallium nitride layer having the ground edge comprises a step of forming the second gallium nitride layer using a hydride vapor phase epitaxy (HVPE) process. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
first gallium nitride layer
GaN
hydrogen ions
H+
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 2A to 2C are images taken using a cross-sectional transmission electron microscope after 5 implanting hydrogen ions on the surface of the first gallium …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TDD of GaN substrate relative to MOCVD-GaN template | — | GaN |
Thermal conductivity of GaN substrate relative to MOCVD-GaN template | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
sapphire
Al₂O₃
gallium arsenide
GaAs
spinel
silicon
Si
indium phosphide
InP
silicon carbide
SiC
FIG. 3 shows white-light scanning interfer- ometry (WSI) and scanning electron microscope (SEM) analysis of the surface of the first gallium nitride layer. …
FIGS. 6C and 6D show transmission electron microscope images of the separation layer when hydrogen ions at a dose of 2.0 E₁₇ H+/cm2 are implanted, and
Cited non-patent literature · 2
METHOD OF FABRICATING GAN SUBSTRATE
sapphire
Al₂O₃
gallium arsenide
GaAs
spinel
silicon
Si
indium phosphide
InP
silicon carbide
SiC
FIG. 3 shows white-light scanning interfer- ometry (WSI) and scanning electron microscope (SEM) analysis of the surface of the first gallium nitride layer. …
FIGS. 6C and 6D show transmission electron microscope images of the separation layer when hydrogen ions at a dose of 2.0 E₁₇ H+/cm2 are implanted, and
Cited non-patent literature · 2
METHOD OF FABRICATING GAN SUBSTRATE
sapphire
Al₂O₃
gallium arsenide
GaAs
spinel
silicon
Si
indium phosphide
InP
silicon carbide
SiC
FIG. 3 shows white-light scanning interfer- ometry (WSI) and scanning electron microscope (SEM) analysis of the surface of the first gallium nitride layer. …
FIGS. 6C and 6D show transmission electron microscope images of the separation layer when hydrogen ions at a dose of 2.0 E₁₇ H+/cm2 are implanted, and
Cited non-patent literature · 2
METHOD OF FABRICATING GAN SUBSTRATE
sapphire
Al₂O₃
gallium arsenide
GaAs
spinel
silicon
Si
indium phosphide
InP
silicon carbide
SiC
FIG. 3 shows white-light scanning interfer- ometry (WSI) and scanning electron microscope (SEM) analysis of the surface of the first gallium nitride layer. …
FIGS. 6C and 6D show transmission electron microscope images of the separation layer when hydrogen ions at a dose of 2.0 E₁₇ H+/cm2 are implanted, and
Cited non-patent literature · 2
