Patent
US 10,096,536GRAPHENE HEAT DISSIPATING STRUCTURE
Cody M. Washburn
US
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Patent
Atlas literature
Patent
US 10,096,536Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: removing a first material from a first portion of a surface of a substrate to expose an underlying second material; applying a solution to the exposed second material, wherein the solution comprising a plurality of diazonium molecules and graphene flakes, a first diazonium molecule in the plurality of diazonium molecules has a first graphene flake attached to a first end of the diazonium molecule, and a second end of the diazonium molecule attaches to the exposed second material; heating the substrate to evaporate a solvent in the solution, wherein the diazonium molecule and attached graphene remain bonded to the second material; reapplying the solution comprising the plurality of diazonium molecules and graphene flakes; and reheating the substrate to cause evaporation of the solvent in the reapplied solution, wherein a second diazonium molecule with an attached second graphene flake bonds to the first graphene flake attached to the first diazonium molecule. Currently amended
The method of claim 1, wherein the second material is silicon carbide. Original
The method of claim 1, wherein removal of the silicon oxide is with hydrofluoric acid. Original
Canceled
A method, comprising: masking a plurality of regions on a surface of a silicon carbide substrate, wherein the silicon carbide surface comprises an oxide layer; removing the oxide layer from unmasked regions of the oxide layer on silicon carbide surface to expose the underlaying silicon carbide; applying a solution to the exposed silicon carbide, wherein the solution comprising molecules formed from diazonium and graphene; heating the substrate causing solvent in the solution to evaporate, wherein a first plurality of the diazonium and graphene molecules in the solution remain bonded to the exposed silicon carbide causing a layer of diazonium and graphene molecules to form on the exposed silicon carbide; and reapplying the solution, wherein a second plurality of the diazonium and graphene molecules in the solution bond with the first plurality of the diazonium and graphene molecules bonded to the exposed silicon carbide causing the layer of diazonium and graphene molecules to increase in thickness. Currently amended
The method of claim 6, wherein the oxide layer is removed with an etchant comprising fluorine. Original
Canceled
The method of claim 76, wherein the layer of diazonium and graphene molecules formed on the exposed silicon carbide has a thickness in a range of about 10 x 1 0- meters to about 50 x 1 0-6 meters. Currently amended
The method of claim 76, wherein the layer of diazonium and graphene molecules form a heat dissipating structure on the silicon carbide substrate. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene heat dissipating structure
Materials described outside the worked examples.
silicon oxide/silicon dioxide
SiO₂
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal conductivity | 2000–4000 W m⁻¹ K⁻¹ | graphene flakes |
diazonium-graphene layer thickness on SiC | 0.00001–0.00005 m |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,096,536Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: removing a first material from a first portion of a surface of a substrate to expose an underlying second material; applying a solution to the exposed second material, wherein the solution comprising a plurality of diazonium molecules and graphene flakes, a first diazonium molecule in the plurality of diazonium molecules has a first graphene flake attached to a first end of the diazonium molecule, and a second end of the diazonium molecule attaches to the exposed second material; heating the substrate to evaporate a solvent in the solution, wherein the diazonium molecule and attached graphene remain bonded to the second material; reapplying the solution comprising the plurality of diazonium molecules and graphene flakes; and reheating the substrate to cause evaporation of the solvent in the reapplied solution, wherein a second diazonium molecule with an attached second graphene flake bonds to the first graphene flake attached to the first diazonium molecule. Currently amended
The method of claim 1, wherein the second material is silicon carbide. Original
The method of claim 1, wherein removal of the silicon oxide is with hydrofluoric acid. Original
Canceled
A method, comprising: masking a plurality of regions on a surface of a silicon carbide substrate, wherein the silicon carbide surface comprises an oxide layer; removing the oxide layer from unmasked regions of the oxide layer on silicon carbide surface to expose the underlaying silicon carbide; applying a solution to the exposed silicon carbide, wherein the solution comprising molecules formed from diazonium and graphene; heating the substrate causing solvent in the solution to evaporate, wherein a first plurality of the diazonium and graphene molecules in the solution remain bonded to the exposed silicon carbide causing a layer of diazonium and graphene molecules to form on the exposed silicon carbide; and reapplying the solution, wherein a second plurality of the diazonium and graphene molecules in the solution bond with the first plurality of the diazonium and graphene molecules bonded to the exposed silicon carbide causing the layer of diazonium and graphene molecules to increase in thickness. Currently amended
The method of claim 6, wherein the oxide layer is removed with an etchant comprising fluorine. Original
Canceled
The method of claim 76, wherein the layer of diazonium and graphene molecules formed on the exposed silicon carbide has a thickness in a range of about 10 x 1 0- meters to about 50 x 1 0-6 meters. Currently amended
The method of claim 76, wherein the layer of diazonium and graphene molecules form a heat dissipating structure on the silicon carbide substrate. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene heat dissipating structure
Materials described outside the worked examples.
silicon oxide/silicon dioxide
SiO₂
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal conductivity | 2000–4000 W m⁻¹ K⁻¹ | graphene flakes |
diazonium-graphene layer thickness on SiC | 0.00001–0.00005 m |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,096,536Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: removing a first material from a first portion of a surface of a substrate to expose an underlying second material; applying a solution to the exposed second material, wherein the solution comprising a plurality of diazonium molecules and graphene flakes, a first diazonium molecule in the plurality of diazonium molecules has a first graphene flake attached to a first end of the diazonium molecule, and a second end of the diazonium molecule attaches to the exposed second material; heating the substrate to evaporate a solvent in the solution, wherein the diazonium molecule and attached graphene remain bonded to the second material; reapplying the solution comprising the plurality of diazonium molecules and graphene flakes; and reheating the substrate to cause evaporation of the solvent in the reapplied solution, wherein a second diazonium molecule with an attached second graphene flake bonds to the first graphene flake attached to the first diazonium molecule. Currently amended
The method of claim 1, wherein the second material is silicon carbide. Original
The method of claim 1, wherein removal of the silicon oxide is with hydrofluoric acid. Original
Canceled
A method, comprising: masking a plurality of regions on a surface of a silicon carbide substrate, wherein the silicon carbide surface comprises an oxide layer; removing the oxide layer from unmasked regions of the oxide layer on silicon carbide surface to expose the underlaying silicon carbide; applying a solution to the exposed silicon carbide, wherein the solution comprising molecules formed from diazonium and graphene; heating the substrate causing solvent in the solution to evaporate, wherein a first plurality of the diazonium and graphene molecules in the solution remain bonded to the exposed silicon carbide causing a layer of diazonium and graphene molecules to form on the exposed silicon carbide; and reapplying the solution, wherein a second plurality of the diazonium and graphene molecules in the solution bond with the first plurality of the diazonium and graphene molecules bonded to the exposed silicon carbide causing the layer of diazonium and graphene molecules to increase in thickness. Currently amended
The method of claim 6, wherein the oxide layer is removed with an etchant comprising fluorine. Original
Canceled
The method of claim 76, wherein the layer of diazonium and graphene molecules formed on the exposed silicon carbide has a thickness in a range of about 10 x 1 0- meters to about 50 x 1 0-6 meters. Currently amended
The method of claim 76, wherein the layer of diazonium and graphene molecules form a heat dissipating structure on the silicon carbide substrate. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene heat dissipating structure
Materials described outside the worked examples.
silicon oxide/silicon dioxide
SiO₂
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal conductivity | 2000–4000 W m⁻¹ K⁻¹ | graphene flakes |
diazonium-graphene layer thickness on SiC | 0.00001–0.00005 m |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,096,536Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: removing a first material from a first portion of a surface of a substrate to expose an underlying second material; applying a solution to the exposed second material, wherein the solution comprising a plurality of diazonium molecules and graphene flakes, a first diazonium molecule in the plurality of diazonium molecules has a first graphene flake attached to a first end of the diazonium molecule, and a second end of the diazonium molecule attaches to the exposed second material; heating the substrate to evaporate a solvent in the solution, wherein the diazonium molecule and attached graphene remain bonded to the second material; reapplying the solution comprising the plurality of diazonium molecules and graphene flakes; and reheating the substrate to cause evaporation of the solvent in the reapplied solution, wherein a second diazonium molecule with an attached second graphene flake bonds to the first graphene flake attached to the first diazonium molecule. Currently amended
The method of claim 1, wherein the second material is silicon carbide. Original
The method of claim 1, wherein removal of the silicon oxide is with hydrofluoric acid. Original
Canceled
A method, comprising: masking a plurality of regions on a surface of a silicon carbide substrate, wherein the silicon carbide surface comprises an oxide layer; removing the oxide layer from unmasked regions of the oxide layer on silicon carbide surface to expose the underlaying silicon carbide; applying a solution to the exposed silicon carbide, wherein the solution comprising molecules formed from diazonium and graphene; heating the substrate causing solvent in the solution to evaporate, wherein a first plurality of the diazonium and graphene molecules in the solution remain bonded to the exposed silicon carbide causing a layer of diazonium and graphene molecules to form on the exposed silicon carbide; and reapplying the solution, wherein a second plurality of the diazonium and graphene molecules in the solution bond with the first plurality of the diazonium and graphene molecules bonded to the exposed silicon carbide causing the layer of diazonium and graphene molecules to increase in thickness. Currently amended
The method of claim 6, wherein the oxide layer is removed with an etchant comprising fluorine. Original
Canceled
The method of claim 76, wherein the layer of diazonium and graphene molecules formed on the exposed silicon carbide has a thickness in a range of about 10 x 1 0- meters to about 50 x 1 0-6 meters. Currently amended
The method of claim 76, wherein the layer of diazonium and graphene molecules form a heat dissipating structure on the silicon carbide substrate. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
graphene heat dissipating structure
Materials described outside the worked examples.
silicon oxide/silicon dioxide
SiO₂
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal conductivity | 2000–4000 W m⁻¹ K⁻¹ | graphene flakes |
diazonium-graphene layer thickness on SiC | 0.00001–0.00005 m |
Related documents with shared materials, methods, properties, or citations.
diazonium molecule
graphene flakes
hydrofluoric acid
HF
fluorine-containing etchant
anhydrous acetonitrile
CH₃CN
gallium arsenide
GaAs
gallium nitride
GaN
silicon nitride
Si₃N₄
natural oxide layer thickness on SiC substrate | 10–20 nm | SiO₂ |
passivation oxide layer thickness on SiC substrate | 1–3 micron | SiO₂ |
width of oxide-free region on SiC substrate | 1e-8–0.00001 m | SiC |
Thickness | 1–3 µm | — |
Temperature | 80–140 °C | — |
— | ≥ 2000 W | — |
diazonium molecule
graphene flakes
hydrofluoric acid
HF
fluorine-containing etchant
anhydrous acetonitrile
CH₃CN
gallium arsenide
GaAs
gallium nitride
GaN
silicon nitride
Si₃N₄
natural oxide layer thickness on SiC substrate | 10–20 nm | SiO₂ |
passivation oxide layer thickness on SiC substrate | 1–3 micron | SiO₂ |
width of oxide-free region on SiC substrate | 1e-8–0.00001 m | SiC |
Thickness | 1–3 µm | — |
Temperature | 80–140 °C | — |
— | ≥ 2000 W | — |
diazonium molecule
graphene flakes
hydrofluoric acid
HF
fluorine-containing etchant
anhydrous acetonitrile
CH₃CN
gallium arsenide
GaAs
gallium nitride
GaN
silicon nitride
Si₃N₄
natural oxide layer thickness on SiC substrate | 10–20 nm | SiO₂ |
passivation oxide layer thickness on SiC substrate | 1–3 micron | SiO₂ |
width of oxide-free region on SiC substrate | 1e-8–0.00001 m | SiC |
Thickness | 1–3 µm | — |
Temperature | 80–140 °C | — |
— | ≥ 2000 W | — |
diazonium molecule
graphene flakes
hydrofluoric acid
HF
fluorine-containing etchant
anhydrous acetonitrile
CH₃CN
gallium arsenide
GaAs
gallium nitride
GaN
silicon nitride
Si₃N₄
natural oxide layer thickness on SiC substrate | 10–20 nm | SiO₂ |
passivation oxide layer thickness on SiC substrate | 1–3 micron | SiO₂ |
width of oxide-free region on SiC substrate | 1e-8–0.00001 m | SiC |
Thickness | 1–3 µm | — |
Temperature | 80–140 °C | — |
— | ≥ 2000 W | — |