METHOD OF PREPARING GRAPHENE LAYER

Kun-Ping HUANG

Patent

Atlas literature

Patent

US 8,859,044

METHOD OF PREPARING GRAPHENE LAYER

Kun-Ping HUANG

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 10 dependent

1
Independentgraphenecarbon-containing gas
A method of forming a single graphene layer wherein the width and length of the graphene layer are more than 1c m, comprising: putting a substrate in a chamber of an electron cyclotron resonance device for providing a magnetic ﬁeld and evacuating the chamber; conducting a carbon-containing gas into the chamber, wherein the carbon-containing gas has a pressure of 1 0-2 torr to 1 0-4 torr in the chamber; heating the substrate until the substrate has a temperature of 1 00° C to 400 ° C; and using a microwave with an electron cyclotron resonance mechanism to excite the carbon- containing gas under the magnetic ﬁeld to deposit [[a]] the graphene layer on the substrate.
1. 2
  Dependent← claim 1
  The method as claimed in claim 1, wherein the electron cyclotron resonance device comprises a single microwave source to provide the microwave.
2. 4
  Dependent← claim 1
  The method as claimed in claim 1, wherein the electron cyclotron resonance device comprises dual or multi-microwave sources to provide the microwave. original
3. 6
  Dependent← claim 1carbon-containing gas
  The method as claimed in claim 1, wherein the carbon-containing gas is a hydrocarbon compound.
4. 7
  Dependent← claim 1CH₄C₂H₄C₂H₂
  The method as claimed in claim 1, wherein the hydrocarbon compound comprises methane, ethene, ethyne, or combinations thereof. BIRCH, STEWART, KOLASCH & BIRCH, LLP CAM/CMR/nbt Application No.: 13/613,755 Docket No.: 0941-2648PUS₁ Reply to Oﬃce Action of Page 3 of 8
5. 8
  Dependent← claim 1inert gasH₂
  The method as claimed in claim 1, further comprising conducting an inert gas and hydrogen into the chamber before, during, or after the step of depositing the graphene layer on the substrate, wherein the inert gas has a pressure of 1 0- 2 torr to 10- 4 torr in the chamber, and the hydrogen has a pressure of 10 -2 torr to 10 ~4 torr in the chamber.
6. 10
  Dependent← claim 1
  The method of claim 1, wherein the step of using the microwave with the electron cyclotron resonance mechanism to excite the carbon-containing gas forms a carbon- containing plasma with a density of 1010 ions/cm3 to 10 12 ions/cm3.
7. 11
  Dependent← claim 1SiC
  The method of claim 1, further comprising forming a ﬁlm on the substrate before the step of putting the substrate in the chamber of the electron cyclotron resonance device, wherein the ﬁlm comprises silicon carbide.
8. 12
  Dependent← claim 1inert gasH₂
  The method of claim 1, wherein the step of using the microwave with the electron cyclotron resonance mechanism to excite the carbon-containing gas forms a carbon-containing plasma with a density of 1010 ions/cm3 to 10 1 ions/cm3, Whe rein wherein said method further comprising conducting an inert gas and hydrogen into the chamber before, during, or after the step of depositing the graphene layer on the substrate, wherein the inert gas has a pressure of 1 0- 2 torr to 10 ~4 torr in the chamber, and the hydrogen has a pressure of 10-2 torr to 1 0~4 torr in the chamber. BIRCH, STEWART, KOLASCH & BIRCH, LLP CAM/CMR/nbt
5
Independent
canceled

Worked examples

Embodiments described in the patent, grouped by the materials and process steps they use.

Example I

description derived process summary

5 materials1 process step

A SiO₂ substrate with an area of 2cmx2cm was placed in a chamber of an electron cyclotron resonance device. The chamber was evacuated to 5x10-6 torr, then ethyne, argon, and hydrogen were introduced until the chamber pressure reached 0.00075 torr. The substrate was heated to 400°C and a 1500 W microwave was applied to excite the ethyne, forming an ethyne plasma. A graphene layer with an area of 2cmx2cm was deposited on the SiO₂ substrate in 5 minutes. The graphene layer showed a sheet resistance of about 40 kΩ/□. Raman spectroscopy showed a characteristic peak at 2650 cm⁻¹, with an intensity ratio of the graphene characteristic peak to the graphite characteristic peak (~1570 cm⁻¹) of about 0.1.

Materials

Materials described outside the worked examples.

carbon-containing gas

Precursor Gas

methane

CH₄

Precursor Gas

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Fet Sheet Resistance	40000 Ω/□	graphene
graphene 2D band	2650 cm⁻¹

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD OF PREPARING GRAPHENE LAYER | Matter42 Literature