Patent
US 8,751,015GRAPHENE ELECTRODES ON A PLANAR CUBIC SILICON CARBIDE (3C-SIC) LONG TERM IMPLANTABLE NEURONAL PROSTHETIC DEVICE
Christopher Leroy Frewin
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,751,015Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 4 is a depiction of fluorescent micrographs of HaCaTs after 72 hour on a) graphene (A), b) graphene (B), c) 6H-SiC(0001), and after 120 hrs on d) …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An implantable neuronal prosthetic device for placement in a patient for receiving and sending electrical signals, comprising: at least one electrode shank adapted for arrangement in said patient having at least one graphene electrode contact disposed on its surface and arranged to electrically couple with said patient, said at least one electrode shank being formed on a single crystal cubic silicon carbide.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising an insulation layer of amorphous, polycrystalline, or single crystal silicon carbide disposed over said electrode shank, said insulation layer of amorphous, polycrystalline, or single crystal silicon carbide being removed from said graphene electrode contact.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, wherein the graphene electrode deposited on one side of the electrode shank.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, wherein the graphene electrode deposited on two sides of the electrode shank.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising signal control electronics attached to said at least one electrode shank and in communication with said at least one grapheme electrode contact.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising a plurality of said at least one electrode shanks being arranged into a matrix.
A method of manufacturing am implantable neuronal prosthetic device for placement in a patient for receiving and sending electrical signals, comprising the steps of: forming at least one electrode shank adapted for arrangement in said patient out of a single crystal cubic silicon carbide; forming a layer of graphene sheet on a surface of at least one electrode shank; and patterning the layer of graphene sheet to at least one graphene electrode contact, said at least one electrode being arranged to electrically couple with said patient.
The method of claim 7, wherein step a) is achieved by heteroepitaxially growing the crystal cubic silicon carbide on a cubic lattice crystalline substrate wafer.
The method of Claim 7, wherein forming the layer of graphene sheet upon the surface is achieved by high-temperature annealing in Ar ambient to realize thermal decomposition of the 3C-SiC surface.
The method of claim 7, wherein forming the layer of graphene sheet upon the surface is through ultra high vacuum annealing to decompose the 3C-SiC surface.
The method of claim 7, wherein patterning the graphene sheet into electrode contact is through common lithographic techniques and 0 2 plasma etching.
The method of claim 7, wherein at least one graphene electrode contact is formed upon the surface.
The method of claim 7, f u rther comprising the steps of: insulating said at least one electrode shank with amorphous, polycrystalline, or single crystal silicon carbide; and removing said insulating layer of amorphous, polycrystalline, or single crystal silicon carbide from said at least one graphene electrode contacts such that said at least one electrode contacts are exposed.
A method of manufacturing an implantable neuronal prosthetic for placement in a patient for receiving and sending electrical signals as in claim 7, further comprising the step of attaching signal control electronics to said at least one electrode shank, said signal controls electronics being in communication with said at least one electrode contact.
A method of manufacturing an implantable neuronal prosthetic for placement in a patient for receiving and sending electrical signals as in claim 7, further comprising the step of arranging a plurality of said at least one electrode shanks into a matrix.
Layer stacks claimed or described, ordered top of device to substrate.
implantable neuronal prosthetic device
Materials described outside the worked examples.
graphene
C
single crystal cubic silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Dispersion of the π-bands measured with UV excited ARPES (hv = 40.8 eV) with display analyzer oriented for momentum scans perpendicular to the ΓK-direction of the graphene Brillouin zone; monolayer graphene on 3C-SiC.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,751,015Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 4 is a depiction of fluorescent micrographs of HaCaTs after 72 hour on a) graphene (A), b) graphene (B), c) 6H-SiC(0001), and after 120 hrs on d) …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An implantable neuronal prosthetic device for placement in a patient for receiving and sending electrical signals, comprising: at least one electrode shank adapted for arrangement in said patient having at least one graphene electrode contact disposed on its surface and arranged to electrically couple with said patient, said at least one electrode shank being formed on a single crystal cubic silicon carbide.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising an insulation layer of amorphous, polycrystalline, or single crystal silicon carbide disposed over said electrode shank, said insulation layer of amorphous, polycrystalline, or single crystal silicon carbide being removed from said graphene electrode contact.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, wherein the graphene electrode deposited on one side of the electrode shank.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, wherein the graphene electrode deposited on two sides of the electrode shank.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising signal control electronics attached to said at least one electrode shank and in communication with said at least one grapheme electrode contact.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising a plurality of said at least one electrode shanks being arranged into a matrix.
A method of manufacturing am implantable neuronal prosthetic device for placement in a patient for receiving and sending electrical signals, comprising the steps of: forming at least one electrode shank adapted for arrangement in said patient out of a single crystal cubic silicon carbide; forming a layer of graphene sheet on a surface of at least one electrode shank; and patterning the layer of graphene sheet to at least one graphene electrode contact, said at least one electrode being arranged to electrically couple with said patient.
The method of claim 7, wherein step a) is achieved by heteroepitaxially growing the crystal cubic silicon carbide on a cubic lattice crystalline substrate wafer.
The method of Claim 7, wherein forming the layer of graphene sheet upon the surface is achieved by high-temperature annealing in Ar ambient to realize thermal decomposition of the 3C-SiC surface.
The method of claim 7, wherein forming the layer of graphene sheet upon the surface is through ultra high vacuum annealing to decompose the 3C-SiC surface.
The method of claim 7, wherein patterning the graphene sheet into electrode contact is through common lithographic techniques and 0 2 plasma etching.
The method of claim 7, wherein at least one graphene electrode contact is formed upon the surface.
The method of claim 7, f u rther comprising the steps of: insulating said at least one electrode shank with amorphous, polycrystalline, or single crystal silicon carbide; and removing said insulating layer of amorphous, polycrystalline, or single crystal silicon carbide from said at least one graphene electrode contacts such that said at least one electrode contacts are exposed.
A method of manufacturing an implantable neuronal prosthetic for placement in a patient for receiving and sending electrical signals as in claim 7, further comprising the step of attaching signal control electronics to said at least one electrode shank, said signal controls electronics being in communication with said at least one electrode contact.
A method of manufacturing an implantable neuronal prosthetic for placement in a patient for receiving and sending electrical signals as in claim 7, further comprising the step of arranging a plurality of said at least one electrode shanks into a matrix.
Layer stacks claimed or described, ordered top of device to substrate.
implantable neuronal prosthetic device
Materials described outside the worked examples.
graphene
C
single crystal cubic silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Dispersion of the π-bands measured with UV excited ARPES (hv = 40.8 eV) with display analyzer oriented for momentum scans perpendicular to the ΓK-direction of the graphene Brillouin zone; monolayer graphene on 3C-SiC.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,751,015Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 4 is a depiction of fluorescent micrographs of HaCaTs after 72 hour on a) graphene (A), b) graphene (B), c) 6H-SiC(0001), and after 120 hrs on d) …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An implantable neuronal prosthetic device for placement in a patient for receiving and sending electrical signals, comprising: at least one electrode shank adapted for arrangement in said patient having at least one graphene electrode contact disposed on its surface and arranged to electrically couple with said patient, said at least one electrode shank being formed on a single crystal cubic silicon carbide.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising an insulation layer of amorphous, polycrystalline, or single crystal silicon carbide disposed over said electrode shank, said insulation layer of amorphous, polycrystalline, or single crystal silicon carbide being removed from said graphene electrode contact.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, wherein the graphene electrode deposited on one side of the electrode shank.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, wherein the graphene electrode deposited on two sides of the electrode shank.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising signal control electronics attached to said at least one electrode shank and in communication with said at least one grapheme electrode contact.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising a plurality of said at least one electrode shanks being arranged into a matrix.
A method of manufacturing am implantable neuronal prosthetic device for placement in a patient for receiving and sending electrical signals, comprising the steps of: forming at least one electrode shank adapted for arrangement in said patient out of a single crystal cubic silicon carbide; forming a layer of graphene sheet on a surface of at least one electrode shank; and patterning the layer of graphene sheet to at least one graphene electrode contact, said at least one electrode being arranged to electrically couple with said patient.
The method of claim 7, wherein step a) is achieved by heteroepitaxially growing the crystal cubic silicon carbide on a cubic lattice crystalline substrate wafer.
The method of Claim 7, wherein forming the layer of graphene sheet upon the surface is achieved by high-temperature annealing in Ar ambient to realize thermal decomposition of the 3C-SiC surface.
The method of claim 7, wherein forming the layer of graphene sheet upon the surface is through ultra high vacuum annealing to decompose the 3C-SiC surface.
The method of claim 7, wherein patterning the graphene sheet into electrode contact is through common lithographic techniques and 0 2 plasma etching.
The method of claim 7, wherein at least one graphene electrode contact is formed upon the surface.
The method of claim 7, f u rther comprising the steps of: insulating said at least one electrode shank with amorphous, polycrystalline, or single crystal silicon carbide; and removing said insulating layer of amorphous, polycrystalline, or single crystal silicon carbide from said at least one graphene electrode contacts such that said at least one electrode contacts are exposed.
A method of manufacturing an implantable neuronal prosthetic for placement in a patient for receiving and sending electrical signals as in claim 7, further comprising the step of attaching signal control electronics to said at least one electrode shank, said signal controls electronics being in communication with said at least one electrode contact.
A method of manufacturing an implantable neuronal prosthetic for placement in a patient for receiving and sending electrical signals as in claim 7, further comprising the step of arranging a plurality of said at least one electrode shanks into a matrix.
Layer stacks claimed or described, ordered top of device to substrate.
implantable neuronal prosthetic device
Materials described outside the worked examples.
graphene
C
single crystal cubic silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Dispersion of the π-bands measured with UV excited ARPES (hv = 40.8 eV) with display analyzer oriented for momentum scans perpendicular to the ΓK-direction of the graphene Brillouin zone; monolayer graphene on 3C-SiC.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,751,015Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 4 is a depiction of fluorescent micrographs of HaCaTs after 72 hour on a) graphene (A), b) graphene (B), c) 6H-SiC(0001), and after 120 hrs on d) …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An implantable neuronal prosthetic device for placement in a patient for receiving and sending electrical signals, comprising: at least one electrode shank adapted for arrangement in said patient having at least one graphene electrode contact disposed on its surface and arranged to electrically couple with said patient, said at least one electrode shank being formed on a single crystal cubic silicon carbide.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising an insulation layer of amorphous, polycrystalline, or single crystal silicon carbide disposed over said electrode shank, said insulation layer of amorphous, polycrystalline, or single crystal silicon carbide being removed from said graphene electrode contact.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, wherein the graphene electrode deposited on one side of the electrode shank.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, wherein the graphene electrode deposited on two sides of the electrode shank.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising signal control electronics attached to said at least one electrode shank and in communication with said at least one grapheme electrode contact.
An implantable neuronal prosthetic device for receiving and sending electrical signals as in claim 1, further comprising a plurality of said at least one electrode shanks being arranged into a matrix.
A method of manufacturing am implantable neuronal prosthetic device for placement in a patient for receiving and sending electrical signals, comprising the steps of: forming at least one electrode shank adapted for arrangement in said patient out of a single crystal cubic silicon carbide; forming a layer of graphene sheet on a surface of at least one electrode shank; and patterning the layer of graphene sheet to at least one graphene electrode contact, said at least one electrode being arranged to electrically couple with said patient.
The method of claim 7, wherein step a) is achieved by heteroepitaxially growing the crystal cubic silicon carbide on a cubic lattice crystalline substrate wafer.
The method of Claim 7, wherein forming the layer of graphene sheet upon the surface is achieved by high-temperature annealing in Ar ambient to realize thermal decomposition of the 3C-SiC surface.
The method of claim 7, wherein forming the layer of graphene sheet upon the surface is through ultra high vacuum annealing to decompose the 3C-SiC surface.
The method of claim 7, wherein patterning the graphene sheet into electrode contact is through common lithographic techniques and 0 2 plasma etching.
The method of claim 7, wherein at least one graphene electrode contact is formed upon the surface.
The method of claim 7, f u rther comprising the steps of: insulating said at least one electrode shank with amorphous, polycrystalline, or single crystal silicon carbide; and removing said insulating layer of amorphous, polycrystalline, or single crystal silicon carbide from said at least one graphene electrode contacts such that said at least one electrode contacts are exposed.
A method of manufacturing an implantable neuronal prosthetic for placement in a patient for receiving and sending electrical signals as in claim 7, further comprising the step of attaching signal control electronics to said at least one electrode shank, said signal controls electronics being in communication with said at least one electrode contact.
A method of manufacturing an implantable neuronal prosthetic for placement in a patient for receiving and sending electrical signals as in claim 7, further comprising the step of arranging a plurality of said at least one electrode shanks into a matrix.
Layer stacks claimed or described, ordered top of device to substrate.
implantable neuronal prosthetic device
Materials described outside the worked examples.
graphene
C
single crystal cubic silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Dispersion of the π-bands measured with UV excited ARPES (hv = 40.8 eV) with display analyzer oriented for momentum scans perpendicular to the ΓK-direction of the graphene Brillouin zone; monolayer graphene on 3C-SiC.
Related documents with shared materials, methods, properties, or citations.
cubic lattice crystalline substrate wafer
silicon substrate
Si
C 1s XPS spectrum measured using a non-monochromatic Mg Kα source, hv = 1253.6 eV; monolayer graphene sample.
AFM micrograph of epitaxial graphene on 6H-SiC (0001). Scan area 20 µm x 20 µm. Scale -10 nm to 8 nm.
Fluorescent micrographs of HaCaT cells after 72 hours on graphene (A), graphene (B), 6H-SiC(0001), and after 120 hours on 6H-SiC(0001) and graphene (B); biocompatibility assessment.
MULTILAYER GRAPHENE STRUCTURES WITH ENHANCED MECHANICAL PROPERTIES RESULTING FROM DETERMINISTIC CONTROL OF INTERLAYER TWIST ANGLES AND CHEMICAL FUNCTIONALIZATION
cubic lattice crystalline substrate wafer
silicon substrate
Si
C 1s XPS spectrum measured using a non-monochromatic Mg Kα source, hv = 1253.6 eV; monolayer graphene sample.
AFM micrograph of epitaxial graphene on 6H-SiC (0001). Scan area 20 µm x 20 µm. Scale -10 nm to 8 nm.
Fluorescent micrographs of HaCaT cells after 72 hours on graphene (A), graphene (B), 6H-SiC(0001), and after 120 hours on 6H-SiC(0001) and graphene (B); biocompatibility assessment.
MULTILAYER GRAPHENE STRUCTURES WITH ENHANCED MECHANICAL PROPERTIES RESULTING FROM DETERMINISTIC CONTROL OF INTERLAYER TWIST ANGLES AND CHEMICAL FUNCTIONALIZATION
cubic lattice crystalline substrate wafer
silicon substrate
Si
C 1s XPS spectrum measured using a non-monochromatic Mg Kα source, hv = 1253.6 eV; monolayer graphene sample.
AFM micrograph of epitaxial graphene on 6H-SiC (0001). Scan area 20 µm x 20 µm. Scale -10 nm to 8 nm.
Fluorescent micrographs of HaCaT cells after 72 hours on graphene (A), graphene (B), 6H-SiC(0001), and after 120 hours on 6H-SiC(0001) and graphene (B); biocompatibility assessment.
MULTILAYER GRAPHENE STRUCTURES WITH ENHANCED MECHANICAL PROPERTIES RESULTING FROM DETERMINISTIC CONTROL OF INTERLAYER TWIST ANGLES AND CHEMICAL FUNCTIONALIZATION
cubic lattice crystalline substrate wafer
silicon substrate
Si
C 1s XPS spectrum measured using a non-monochromatic Mg Kα source, hv = 1253.6 eV; monolayer graphene sample.
AFM micrograph of epitaxial graphene on 6H-SiC (0001). Scan area 20 µm x 20 µm. Scale -10 nm to 8 nm.
Fluorescent micrographs of HaCaT cells after 72 hours on graphene (A), graphene (B), 6H-SiC(0001), and after 120 hours on 6H-SiC(0001) and graphene (B); biocompatibility assessment.
MULTILAYER GRAPHENE STRUCTURES WITH ENHANCED MECHANICAL PROPERTIES RESULTING FROM DETERMINISTIC CONTROL OF INTERLAYER TWIST ANGLES AND CHEMICAL FUNCTIONALIZATION