Patent
US 9,018,101Title: PATTERNED GRAPHENE STRUCTURES ON SILICON CARBIDE
Walt DeHeer
GEORGIA TECH RESEARCH CORPORATION·20 September 2012·US
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Atlas literature
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US 9,018,101Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a top plan view of a carbide crystal with a trench defined thereby. [0016]
FIG. 2 after the carbide crystal has been subject to an annealing environment. [0018]
FIG. 3 is a cross sectional view of the portion shown in
FIG. 4 is a cross sectional view of a trench formed with a mask. [0019]
FIG. 5 is a cross sectional view of a wide trench in which the graphene ribbons are separated.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 14/002,420 Amendment dated 11/20/2014 Reply to Office Action dated 09/02/20 14 Page 2 of 6 AMENDMENTS TO THE CLAIMS Please cancel Claims 12-19 without prejudice. Please amend the claims according to the following listing. This listing of claims will replace all prior versions, and listings, of claims in the application:
The method of Claim 1, further comprising the step of removing residual graphene from a top surface of the face of the carbide crystal.
The method of Claim 1, wherein the step of forming the elongated trench comprises the step of etching.
The method of Claim 1, wherein the two vertical sidewalls have a sidewall height and wherein the horizontal floor has a floor width, and wherein the floor width is narrow enough so that graphene layers forming on the sidewalls merge when the carbide crystal is subjected to the annealing environment.
The method of Claim 1, wherein the carbide crystal comprises a silicon carbide crystal.
Layer stacks claimed or described, ordered top of device to substrate.
graphene ribbon on carbide crystal
Materials described outside the worked examples.
graphene
C
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–4 Torr | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,018,101Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a top plan view of a carbide crystal with a trench defined thereby. [0016]
FIG. 2 after the carbide crystal has been subject to an annealing environment. [0018]
FIG. 3 is a cross sectional view of the portion shown in
FIG. 4 is a cross sectional view of a trench formed with a mask. [0019]
FIG. 5 is a cross sectional view of a wide trench in which the graphene ribbons are separated.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 14/002,420 Amendment dated 11/20/2014 Reply to Office Action dated 09/02/20 14 Page 2 of 6 AMENDMENTS TO THE CLAIMS Please cancel Claims 12-19 without prejudice. Please amend the claims according to the following listing. This listing of claims will replace all prior versions, and listings, of claims in the application:
The method of Claim 1, further comprising the step of removing residual graphene from a top surface of the face of the carbide crystal.
The method of Claim 1, wherein the step of forming the elongated trench comprises the step of etching.
The method of Claim 1, wherein the two vertical sidewalls have a sidewall height and wherein the horizontal floor has a floor width, and wherein the floor width is narrow enough so that graphene layers forming on the sidewalls merge when the carbide crystal is subjected to the annealing environment.
The method of Claim 1, wherein the carbide crystal comprises a silicon carbide crystal.
Layer stacks claimed or described, ordered top of device to substrate.
graphene ribbon on carbide crystal
Materials described outside the worked examples.
graphene
C
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–4 Torr | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,018,101Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a top plan view of a carbide crystal with a trench defined thereby. [0016]
FIG. 2 after the carbide crystal has been subject to an annealing environment. [0018]
FIG. 3 is a cross sectional view of the portion shown in
FIG. 4 is a cross sectional view of a trench formed with a mask. [0019]
FIG. 5 is a cross sectional view of a wide trench in which the graphene ribbons are separated.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 14/002,420 Amendment dated 11/20/2014 Reply to Office Action dated 09/02/20 14 Page 2 of 6 AMENDMENTS TO THE CLAIMS Please cancel Claims 12-19 without prejudice. Please amend the claims according to the following listing. This listing of claims will replace all prior versions, and listings, of claims in the application:
The method of Claim 1, further comprising the step of removing residual graphene from a top surface of the face of the carbide crystal.
The method of Claim 1, wherein the step of forming the elongated trench comprises the step of etching.
The method of Claim 1, wherein the two vertical sidewalls have a sidewall height and wherein the horizontal floor has a floor width, and wherein the floor width is narrow enough so that graphene layers forming on the sidewalls merge when the carbide crystal is subjected to the annealing environment.
The method of Claim 1, wherein the carbide crystal comprises a silicon carbide crystal.
Layer stacks claimed or described, ordered top of device to substrate.
graphene ribbon on carbide crystal
Materials described outside the worked examples.
graphene
C
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–4 Torr | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,018,101Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a top plan view of a carbide crystal with a trench defined thereby. [0016]
FIG. 2 after the carbide crystal has been subject to an annealing environment. [0018]
FIG. 3 is a cross sectional view of the portion shown in
FIG. 4 is a cross sectional view of a trench formed with a mask. [0019]
FIG. 5 is a cross sectional view of a wide trench in which the graphene ribbons are separated.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 14/002,420 Amendment dated 11/20/2014 Reply to Office Action dated 09/02/20 14 Page 2 of 6 AMENDMENTS TO THE CLAIMS Please cancel Claims 12-19 without prejudice. Please amend the claims according to the following listing. This listing of claims will replace all prior versions, and listings, of claims in the application:
The method of Claim 1, further comprising the step of removing residual graphene from a top surface of the face of the carbide crystal.
The method of Claim 1, wherein the step of forming the elongated trench comprises the step of etching.
The method of Claim 1, wherein the two vertical sidewalls have a sidewall height and wherein the horizontal floor has a floor width, and wherein the floor width is narrow enough so that graphene layers forming on the sidewalls merge when the carbide crystal is subjected to the annealing environment.
The method of Claim 1, wherein the carbide crystal comprises a silicon carbide crystal.
Layer stacks claimed or described, ordered top of device to substrate.
graphene ribbon on carbide crystal
Materials described outside the worked examples.
graphene
C
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–4 Torr | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
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nickel
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aluminum
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poly methyl methacrylate
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Duration | ≥ 10 minutes | — |
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