Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations1 property3 figures
1 preparation2 characterizations1 property2 figures
1 preparation4 characterizations10 properties4 figures
1 preparation3 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Particle Diameter | hydrodynamic diameter | 22.3nm | — | |||
| Particle Diameter | diameter range | 5-15nm | — | |||
| Particle Diameter | individual NP size | 3-6nm | — | |||
| Stm Feature Periodicity | honeycomb lattice modulation | 0.249nm | — | |||
| Stm Feature Periodicity | quasi-(6x6) periodicity | 1.84nm | — | |||
| Xps Binding Energy | Ni 2p3/2 | 852.8eV | — | |||
| Xps Binding Energy | Ni 2p | 855.8eV | — | |||
| Xps Binding Energy | Ni 2p | 863eV | — | |||
| Xps Binding Energy | — | 283.8eV | — | |||
| Xps Binding Energy | C 1s | 284.9eV | — | |||
| Xps Binding Energy | C 1s | 284.7eV | — | |||
| Xps Binding Energy | C 1s | 285.6eV | — | |||
| Xps Binding Energy Shift | — | -283.6eV | — | |||
| Xps Binding Energy | Si 2p | 101.5eV | — |
Related documents with shared materials, methods, properties, or citations.
Process for Preparing Graphene on a SiC Substrate Based on Metal Film-Assisted Annealing
Wafer-Scale Single-Crystalline Monolayer Graphene
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
METHOD OF PREPARING GRAPHENE LAYER
Nickel intercalation in epitaxial graphene on SiC(0001): a novel platform for engineering two-dimensional heterostructures
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations1 property3 figures
1 preparation2 characterizations1 property2 figures
1 preparation4 characterizations10 properties4 figures
1 preparation3 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Particle Diameter | hydrodynamic diameter | 22.3nm | — | |||
| Particle Diameter | diameter range | 5-15nm | — | |||
| Particle Diameter | individual NP size | 3-6nm | — | |||
| Stm Feature Periodicity | honeycomb lattice modulation | 0.249nm | — | |||
| Stm Feature Periodicity | quasi-(6x6) periodicity | 1.84nm | — | |||
| Xps Binding Energy | Ni 2p3/2 | 852.8eV | — | |||
| Xps Binding Energy | Ni 2p | 855.8eV | — | |||
| Xps Binding Energy | Ni 2p | 863eV | — | |||
| Xps Binding Energy | — | 283.8eV | — | |||
| Xps Binding Energy | C 1s | 284.9eV | — | |||
| Xps Binding Energy | C 1s | 284.7eV | — | |||
| Xps Binding Energy | C 1s | 285.6eV | — | |||
| Xps Binding Energy Shift | — | -283.6eV | — | |||
| Xps Binding Energy | Si 2p | 101.5eV | — |
Related documents with shared materials, methods, properties, or citations.
Process for Preparing Graphene on a SiC Substrate Based on Metal Film-Assisted Annealing
Wafer-Scale Single-Crystalline Monolayer Graphene
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
METHOD OF PREPARING GRAPHENE LAYER
Nickel intercalation in epitaxial graphene on SiC(0001): a novel platform for engineering two-dimensional heterostructures
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations1 property3 figures
1 preparation2 characterizations1 property2 figures
1 preparation4 characterizations10 properties4 figures
1 preparation3 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Particle Diameter | hydrodynamic diameter | 22.3nm | — | |||
| Particle Diameter | diameter range | 5-15nm | — | |||
| Particle Diameter | individual NP size | 3-6nm | — | |||
| Stm Feature Periodicity | honeycomb lattice modulation | 0.249nm | — | |||
| Stm Feature Periodicity | quasi-(6x6) periodicity | 1.84nm | — | |||
| Xps Binding Energy | Ni 2p3/2 | 852.8eV | — | |||
| Xps Binding Energy | Ni 2p | 855.8eV | — | |||
| Xps Binding Energy | Ni 2p | 863eV | — | |||
| Xps Binding Energy | — | 283.8eV | — | |||
| Xps Binding Energy | C 1s | 284.9eV | — | |||
| Xps Binding Energy | C 1s | 284.7eV | — | |||
| Xps Binding Energy | C 1s | 285.6eV | — | |||
| Xps Binding Energy Shift | — | -283.6eV | — | |||
| Xps Binding Energy | Si 2p | 101.5eV | — |
Related documents with shared materials, methods, properties, or citations.
Process for Preparing Graphene on a SiC Substrate Based on Metal Film-Assisted Annealing
Wafer-Scale Single-Crystalline Monolayer Graphene
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
METHOD OF PREPARING GRAPHENE LAYER
Nickel intercalation in epitaxial graphene on SiC(0001): a novel platform for engineering two-dimensional heterostructures
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations1 property3 figures
1 preparation2 characterizations1 property2 figures
1 preparation4 characterizations10 properties4 figures
1 preparation3 characterizations2 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Particle Diameter | hydrodynamic diameter | 22.3nm | — | |||
| Particle Diameter | diameter range | 5-15nm | — | |||
| Particle Diameter | individual NP size | 3-6nm | — | |||
| Stm Feature Periodicity | honeycomb lattice modulation | 0.249nm | — | |||
| Stm Feature Periodicity | quasi-(6x6) periodicity | 1.84nm | — | |||
| Xps Binding Energy | Ni 2p3/2 | 852.8eV | — | |||
| Xps Binding Energy | Ni 2p | 855.8eV | — | |||
| Xps Binding Energy | Ni 2p | 863eV | — | |||
| Xps Binding Energy | — | 283.8eV | — | |||
| Xps Binding Energy | C 1s | 284.9eV | — | |||
| Xps Binding Energy | C 1s | 284.7eV | — | |||
| Xps Binding Energy | C 1s | 285.6eV | — | |||
| Xps Binding Energy Shift | — | -283.6eV | — | |||
| Xps Binding Energy | Si 2p | 101.5eV | — |
Related documents with shared materials, methods, properties, or citations.
Process for Preparing Graphene on a SiC Substrate Based on Metal Film-Assisted Annealing
Wafer-Scale Single-Crystalline Monolayer Graphene
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
METHOD OF PREPARING GRAPHENE LAYER
Nickel intercalation in epitaxial graphene on SiC(0001): a novel platform for engineering two-dimensional heterostructures
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS2 Heterostructures at Room Temperature