Research paper
Experimental CharacterizationUltrabroadband thin-film lithium tantalate modulator for high-speed communications
Chengli Wang, Dengyang Fang, Junyin Zhang, Alexander Kotz et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Rf Refractive Index | neff | 2.22 | — | |||
| Group Index | ng | 2.25 | — | |||
| Rf Loss Coefficient | silver CPW | 0.58dB cm⁻¹ GHz⁻¹/2 | — | |||
| Rf Loss Coefficient | gold CPW | 0.77dB cm⁻¹ GHz⁻¹/2 | — | |||
| Electro Optic Bandwidth | 3 dB bandwidth | 110GHz | — | |||
| Half Wave Voltage Length Product | VπL | 2.8V·cm | — | |||
| Half Wave Voltage | Vπ | 4.8V | — | |||
| Data Rate | PAM₈ symbol rate | 176GBd | — | |||
| Net Data Rate | net data rate | 400Gbit/s | — | |||
| Bias Drift | relative bias drift | lower than LiNbO3 integrated modulator | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Rf Refractive Index | neff | 2.22 | — | |||
| Group Index | ng | 2.25 | — | |||
| Rf Loss Coefficient | silver CPW | 0.58dB cm⁻¹ GHz⁻¹/2 | — | |||
| Rf Loss Coefficient | gold CPW | 0.77dB cm⁻¹ GHz⁻¹/2 | — | |||
| Electro Optic Bandwidth | 3 dB bandwidth | 110GHz | — | |||
| Half Wave Voltage Length Product | VπL | 2.8V·cm | — | |||
| Half Wave Voltage | Vπ | 4.8V | — | |||
| Data Rate | PAM₈ symbol rate | 176GBd | — | |||
| Net Data Rate | net data rate | 400Gbit/s | — | |||
| Bias Drift | relative bias drift | lower than LiNbO3 integrated modulator | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Rf Refractive Index | neff | 2.22 | — | |||
| Group Index | ng | 2.25 | — | |||
| Rf Loss Coefficient | silver CPW | 0.58dB cm⁻¹ GHz⁻¹/2 | — | |||
| Rf Loss Coefficient | gold CPW | 0.77dB cm⁻¹ GHz⁻¹/2 | — | |||
| Electro Optic Bandwidth | 3 dB bandwidth | 110GHz | — | |||
| Half Wave Voltage Length Product | VπL | 2.8V·cm | — | |||
| Half Wave Voltage | Vπ | 4.8V | — | |||
| Data Rate | PAM₈ symbol rate | 176GBd | — | |||
| Net Data Rate | net data rate | 400Gbit/s | — | |||
| Bias Drift | relative bias drift | lower than LiNbO3 integrated modulator | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Rf Refractive Index | neff | 2.22 | — | |||
| Group Index | ng | 2.25 | — | |||
| Rf Loss Coefficient | silver CPW | 0.58dB cm⁻¹ GHz⁻¹/2 | — | |||
| Rf Loss Coefficient | gold CPW | 0.77dB cm⁻¹ GHz⁻¹/2 | — | |||
| Electro Optic Bandwidth | 3 dB bandwidth | 110GHz | — | |||
| Half Wave Voltage Length Product | VπL | 2.8V·cm | — | |||
| Half Wave Voltage | Vπ | 4.8V | — | |||
| Data Rate | PAM₈ symbol rate | 176GBd | — | |||
| Net Data Rate | net data rate | 400Gbit/s | — | |||
| Bias Drift | relative bias drift | lower than LiNbO3 integrated modulator | — |