Graphene oxide for high performance nonlinear optics in integrated nanowires

David Moss

doi:10.1117/12.3005069

Paper details

Research paper

Experimental GrowthExperimental Characterization

Graphene oxide for high performance nonlinear optics in integrated nanowires

David Moss

2004·10.1117/12.3005069·arXiv:2410.22348

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GO-coated silicon nitride waveguide chip with monolayer GO film.

4 preparations2 characterizations5 properties1 figure

ExperimentalSi₃N₄Studied MaterialGOStudied MaterialSiO₂Substrate / Dielectric

Bare silicon nitride waveguide chip before GO coating.

5 preparations1 characterization2 properties1 figure

ExperimentalSi₃N₄Studied MaterialSiO₂Substrate / Dielectric

Materials

graphene oxide

Studied Material

Also known as

studied material

silicon nitride

Si₃N₄

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Graphene oxide for high performance nonlinear optics in integrated nanowires | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	Si₃N₄ waveguide height	0.72um	Si₃N₄	GO-coated silicon nitride waveguide chip with monolayer GO f Bare silicon nitride waveguide chip before GO coating.	—
Cross Section Width	Si₃N₄ waveguide width	1.6um	Si₃N₄	GO-coated silicon nitride waveguide chip with monolayer GO f Bare silicon nitride waveguide chip before GO coating.	—
Film Thickness	GO film thickness	2.1nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—
Film Thickness	GO film thickness	4.3nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—
Film Thickness	GO film thickness per layer	2nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	Si₃N₄ waveguide height	0.72um	Si₃N₄	GO-coated silicon nitride waveguide chip with monolayer GO f Bare silicon nitride waveguide chip before GO coating.	—
Cross Section Width	Si₃N₄ waveguide width	1.6um	Si₃N₄	GO-coated silicon nitride waveguide chip with monolayer GO f Bare silicon nitride waveguide chip before GO coating.	—
Film Thickness	GO film thickness	2.1nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—
Film Thickness	GO film thickness	4.3nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—
Film Thickness	GO film thickness per layer	2nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	Si₃N₄ waveguide height	0.72um	Si₃N₄	GO-coated silicon nitride waveguide chip with monolayer GO f Bare silicon nitride waveguide chip before GO coating.	—
Cross Section Width	Si₃N₄ waveguide width	1.6um	Si₃N₄	GO-coated silicon nitride waveguide chip with monolayer GO f Bare silicon nitride waveguide chip before GO coating.	—
Film Thickness	GO film thickness	2.1nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—
Film Thickness	GO film thickness	4.3nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—
Film Thickness	GO film thickness per layer	2nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	Si₃N₄ waveguide height	0.72um	Si₃N₄	GO-coated silicon nitride waveguide chip with monolayer GO f Bare silicon nitride waveguide chip before GO coating.	—
Cross Section Width	Si₃N₄ waveguide width	1.6um	Si₃N₄	GO-coated silicon nitride waveguide chip with monolayer GO f Bare silicon nitride waveguide chip before GO coating.	—
Film Thickness	GO film thickness	2.1nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—
Film Thickness	GO film thickness	4.3nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—
Film Thickness	GO film thickness per layer	2nm	GO	GO-coated silicon nitride waveguide chip with monolayer GO f	—

Graphene oxide for high performance nonlinear optics in integrated nanowires

Samples

GO-coated silicon nitride waveguide chip with monolayer GO film.

Bare silicon nitride waveguide chip before GO coating.

Materials

Why these are connected

Graphene oxide for high performance nonlinear optics in integrated nanowires

Samples

GO-coated silicon nitride waveguide chip with monolayer GO film.

Bare silicon nitride waveguide chip before GO coating.

Materials

Why these are connected

Graphene oxide for high performance nonlinear optics in integrated nanowires

Samples

GO-coated silicon nitride waveguide chip with monolayer GO film.

Bare silicon nitride waveguide chip before GO coating.

Materials

Why these are connected

Graphene oxide for high performance nonlinear optics in integrated nanowires

Samples

GO-coated silicon nitride waveguide chip with monolayer GO film.

Bare silicon nitride waveguide chip before GO coating.

Materials

Why these are connected

Graphene oxide for high performance nonlinear optics in integrated nanowires

Samples

GO-coated silicon nitride waveguide chip with monolayer GO film.

Bare silicon nitride waveguide chip before GO coating.

Materials

Why these are connected

Graphene oxide for high performance nonlinear optics in integrated nanowires

Samples

GO-coated silicon nitride waveguide chip with monolayer GO film.

Bare silicon nitride waveguide chip before GO coating.

Materials

Why these are connected

Graphene oxide for high performance nonlinear optics in integrated nanowires

Samples

GO-coated silicon nitride waveguide chip with monolayer GO film.

Bare silicon nitride waveguide chip before GO coating.

Materials

Why these are connected

Graphene oxide for high performance nonlinear optics in integrated nanowires

Samples

GO-coated silicon nitride waveguide chip with monolayer GO film.

Bare silicon nitride waveguide chip before GO coating.

Materials

Why these are connected

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