Research paperExperimental GrowthExperimental CharacterizationGraphene oxide for high performance nonlinear optics in integrated nanowiresDavid Moss2004·10.1117/12.3005069·arXiv:2410.22348AbstractWe report enhanced nonlinear optics in integrated nanophotonic chips through the use of integrated with 2D graphene oxide (GO) films. We investigate nanophotonic platforms including silicon, silicon nitride and high index doped silica. Due to the high Kerr nonlinearity of GO films and low nonlinear absorption we observe significant enhancement of third-order nonlinear processes. In particular, in silicon we observe an increase in both the Kerr nonlinearity and nonlinear figure of merit of up to 20 times. These results show the strong capability of GO films for improving the nonlinear optical performance of integrated photonic devices.Read more
GO-coated silicon nitride waveguide chip with monolayer GO film.4 preparations2 characterizations5 properties1 figureExperimentalSi₃N₄Studied MaterialGOStudied MaterialSiO₂Substrate / DielectricExpand
Bare silicon nitride waveguide chip before GO coating.5 preparations1 characterization2 properties1 figureExperimentalSi₃N₄Studied MaterialSiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationGraphene oxide for high performance nonlinear optics in integrated nanowiresDavid Moss2004·10.1117/12.3005069·arXiv:2410.22348AbstractWe report enhanced nonlinear optics in integrated nanophotonic chips through the use of integrated with 2D graphene oxide (GO) films. We investigate nanophotonic platforms including silicon, silicon nitride and high index doped silica. Due to the high Kerr nonlinearity of GO films and low nonlinear absorption we observe significant enhancement of third-order nonlinear processes. In particular, in silicon we observe an increase in both the Kerr nonlinearity and nonlinear figure of merit of up to 20 times. These results show the strong capability of GO films for improving the nonlinear optical performance of integrated photonic devices.Read more
GO-coated silicon nitride waveguide chip with monolayer GO film.4 preparations2 characterizations5 properties1 figureExperimentalSi₃N₄Studied MaterialGOStudied MaterialSiO₂Substrate / DielectricExpand
Bare silicon nitride waveguide chip before GO coating.5 preparations1 characterization2 properties1 figureExperimentalSi₃N₄Studied MaterialSiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationGraphene oxide for high performance nonlinear optics in integrated nanowiresDavid Moss2004·10.1117/12.3005069·arXiv:2410.22348AbstractWe report enhanced nonlinear optics in integrated nanophotonic chips through the use of integrated with 2D graphene oxide (GO) films. We investigate nanophotonic platforms including silicon, silicon nitride and high index doped silica. Due to the high Kerr nonlinearity of GO films and low nonlinear absorption we observe significant enhancement of third-order nonlinear processes. In particular, in silicon we observe an increase in both the Kerr nonlinearity and nonlinear figure of merit of up to 20 times. These results show the strong capability of GO films for improving the nonlinear optical performance of integrated photonic devices.Read more
GO-coated silicon nitride waveguide chip with monolayer GO film.4 preparations2 characterizations5 properties1 figureExperimentalSi₃N₄Studied MaterialGOStudied MaterialSiO₂Substrate / DielectricExpand
Bare silicon nitride waveguide chip before GO coating.5 preparations1 characterization2 properties1 figureExperimentalSi₃N₄Studied MaterialSiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationGraphene oxide for high performance nonlinear optics in integrated nanowiresDavid Moss2004·10.1117/12.3005069·arXiv:2410.22348AbstractWe report enhanced nonlinear optics in integrated nanophotonic chips through the use of integrated with 2D graphene oxide (GO) films. We investigate nanophotonic platforms including silicon, silicon nitride and high index doped silica. Due to the high Kerr nonlinearity of GO films and low nonlinear absorption we observe significant enhancement of third-order nonlinear processes. In particular, in silicon we observe an increase in both the Kerr nonlinearity and nonlinear figure of merit of up to 20 times. These results show the strong capability of GO films for improving the nonlinear optical performance of integrated photonic devices.Read more
GO-coated silicon nitride waveguide chip with monolayer GO film.4 preparations2 characterizations5 properties1 figureExperimentalSi₃N₄Studied MaterialGOStudied MaterialSiO₂Substrate / DielectricExpand
Bare silicon nitride waveguide chip before GO coating.5 preparations1 characterization2 properties1 figureExperimentalSi₃N₄Studied MaterialSiO₂Substrate / DielectricExpand
