Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

doi:10.29026/oes.2025.240032

Research paper

Experimental CharacterizationComputational Multiscale

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

2025·10.29026/oes.2025.240032·arXiv:2503.02287

Research paper

Experimental CharacterizationComputational Multiscale

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

2025·10.29026/oes.2025.240032·arXiv:2503.02287

Research paper

Experimental CharacterizationComputational Multiscale

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

2025·10.29026/oes.2025.240032·arXiv:2503.02287

Research paper

Experimental CharacterizationComputational Multiscale

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

2025·10.29026/oes.2025.240032·arXiv:2503.02287

Research paper

Experimental CharacterizationComputational Multiscale

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

2025·10.29026/oes.2025.240032·arXiv:2503.02287

Research paper

Experimental CharacterizationComputational Multiscale

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

2025·10.29026/oes.2025.240032·arXiv:2503.02287

Research paper

Experimental CharacterizationComputational Multiscale

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

2025·10.29026/oes.2025.240032·arXiv:2503.02287

Research paper

Experimental CharacterizationComputational Multiscale

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

David J. Moss

2025·10.29026/oes.2025.240032·arXiv:2503.02287

SOI photonic devices coated with 2 layers of GO films prior to reduction; includes waveguides and microring resonators on opened windows in silica cladding.

1 preparation4 characterizations8 properties3 figures

ExperimentalGOStudied MaterialSiSubstrate / DielectricSiO₂Substrate / Dielectric

SOI photonic devices after thermal or photothermal reduction of the GO coating, forming rGO films on waveguides and microring resonators.

2 preparations2 characterizations6 properties2 figures

ExperimentalrGOStudied MaterialSiSubstrate / DielectricSiO₂Substrate / Dielectric

SOI photonic devices coated with 2 layers of GO films prior to reduction; includes waveguides and microring resonators on opened windows in silica cladding.

1 preparation4 characterizations8 properties3 figures

ExperimentalGOStudied MaterialSiSubstrate / DielectricSiO₂Substrate / Dielectric

SOI photonic devices after thermal or photothermal reduction of the GO coating, forming rGO films on waveguides and microring resonators.

2 preparations2 characterizations6 properties2 figures

ExperimentalrGOStudied MaterialSiSubstrate / DielectricSiO₂Substrate / Dielectric

SOI photonic devices coated with 2 layers of GO films prior to reduction; includes waveguides and microring resonators on opened windows in silica cladding.

1 preparation4 characterizations8 properties3 figures

ExperimentalGOStudied MaterialSiSubstrate / DielectricSiO₂Substrate / Dielectric

SOI photonic devices after thermal or photothermal reduction of the GO coating, forming rGO films on waveguides and microring resonators.

2 preparations2 characterizations6 properties2 figures

ExperimentalrGOStudied MaterialSiSubstrate / DielectricSiO₂Substrate / Dielectric

SOI photonic devices coated with 2 layers of GO films prior to reduction; includes waveguides and microring resonators on opened windows in silica cladding.

1 preparation4 characterizations8 properties3 figures

ExperimentalGOStudied MaterialSiSubstrate / DielectricSiO₂Substrate / Dielectric

SOI photonic devices after thermal or photothermal reduction of the GO coating, forming rGO films on waveguides and microring resonators.

2 preparations2 characterizations6 properties2 figures

ExperimentalrGOStudied MaterialSiSubstrate / DielectricSiO₂Substrate / Dielectric

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	silicon waveguide thickness	220nm	Si	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Substrate Thickness	silica upper cladding thickness	1500nm	SiO₂	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Substrate Thickness	GO film thickness	4nm	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Substrate Thickness	rGO film thickness	4nm	rGO	SOI photonic devices after thermal or photothermal reduction		—
Raman Peak	D	1345cm⁻¹	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Raman Peak	G	1590cm⁻¹	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Fet On Off Ratio	polarization-dependent loss	47dB	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Fet On Off Ratio	polarization extinction ratio	16dB	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Raman Intensity Ratio	loss anisotropy ratio relative to GO	over 4x	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Ir Band Position	IR band	1345cm⁻¹	—	—	—	—
Ir Band Position	IR band	1590cm⁻¹	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	silicon waveguide thickness	220nm	Si	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Substrate Thickness	silica upper cladding thickness	1500nm	SiO₂	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Substrate Thickness	GO film thickness	4nm	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Substrate Thickness	rGO film thickness	4nm	rGO	SOI photonic devices after thermal or photothermal reduction		—
Raman Peak	D	1345cm⁻¹	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Raman Peak	G	1590cm⁻¹	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Fet On Off Ratio	polarization-dependent loss	47dB	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Fet On Off Ratio	polarization extinction ratio	16dB	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Raman Intensity Ratio	loss anisotropy ratio relative to GO	over 4x	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Ir Band Position	IR band	1345cm⁻¹	—	—	—	—
Ir Band Position	IR band	1590cm⁻¹	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	silicon waveguide thickness	220nm	Si	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Substrate Thickness	silica upper cladding thickness	1500nm	SiO₂	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Substrate Thickness	GO film thickness	4nm	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Substrate Thickness	rGO film thickness	4nm	rGO	SOI photonic devices after thermal or photothermal reduction		—
Raman Peak	D	1345cm⁻¹	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Raman Peak	G	1590cm⁻¹	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Fet On Off Ratio	polarization-dependent loss	47dB	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Fet On Off Ratio	polarization extinction ratio	16dB	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Raman Intensity Ratio	loss anisotropy ratio relative to GO	over 4x	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Ir Band Position	IR band	1345cm⁻¹	—	—	—	—
Ir Band Position	IR band	1590cm⁻¹	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	silicon waveguide thickness	220nm	Si	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Substrate Thickness	silica upper cladding thickness	1500nm	SiO₂	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Substrate Thickness	GO film thickness	4nm	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Substrate Thickness	rGO film thickness	4nm	rGO	SOI photonic devices after thermal or photothermal reduction		—
Raman Peak	D	1345cm⁻¹	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Raman Peak	G	1590cm⁻¹	GO	SOI photonic devices coated with 2 layers of GO films prior		—
Fet On Off Ratio	polarization-dependent loss	47dB	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Fet On Off Ratio	polarization extinction ratio	16dB	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Raman Intensity Ratio	loss anisotropy ratio relative to GO	over 4x	GO rGO	SOI photonic devices coated with 2 layers of GO films prior SOI photonic devices after thermal or photothermal reduction		—
Ir Band Position	IR band	1345cm⁻¹	—	—	—	—
Ir Band Position	IR band	1590cm⁻¹	—	—	—	—

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

Integrated microring resonator and waveguide polarizers based on partially photo-reduced 2D graphene oxide thin films

Samples

SOI photonic devices coated with 2 layers of GO films prior to reduction; includes waveguides and microring resonators on opened windows in silica cladding.

SOI photonic devices after thermal or photothermal reduction of the GO coating, forming rGO films on waveguides and microring resonators.

Materials

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

SOI photonic devices coated with 2 layers of GO films prior to reduction; includes waveguides and microring resonators on opened windows in silica cladding.

SOI photonic devices after thermal or photothermal reduction of the GO coating, forming rGO films on waveguides and microring resonators.

Materials

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

SOI photonic devices coated with 2 layers of GO films prior to reduction; includes waveguides and microring resonators on opened windows in silica cladding.

SOI photonic devices after thermal or photothermal reduction of the GO coating, forming rGO films on waveguides and microring resonators.

Materials

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

SOI photonic devices coated with 2 layers of GO films prior to reduction; includes waveguides and microring resonators on opened windows in silica cladding.

SOI photonic devices after thermal or photothermal reduction of the GO coating, forming rGO films on waveguides and microring resonators.

Materials

Processing

Characterization

Properties

Simulations

Why these are connected