Patent
US 9,607,725GRAPHENE STRUCTURE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE ELEMENT, AND ELECTRONIC DEVICE
Adarsh Sandhu
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,607,725Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method for producing a graphene structure, the method comprising: preparing a substrate; conducting a hydrophilization treatment on a predetermined portion of the substrate by plasma treatment with oxygen (0 2) plasma; conducting a base coating treatment comprising an adhesion agent on a surface of the substrate, wherein the adhesion agent is selectively disposed in a pattern at a predetermined portion of the substrate between [[a]]the surface of the substrate and a hydrophobization treatment; conducting the hydrophobization treatment by forming a resist or a halide having the pattern at the predetermined portion of the substrate; disposing the graphene on the surface of the substrate exposed from the pattern of the resist or the halide; removing the resist or the halide from the hydrophilized substrate; reducing the graphene disposed on the surface of the substrate; and forming an electrode connected to the graphene disposed on the surface of the substrate.
A method for producing a graphene structure, the method comprising: preparing a substrate comprising silicon coated by silicon dioxide (Si O 2); subjecting a predetermined portion of the substrate to a base coating treatment comprising an adhesion agent and a hydrophobization treatment, wherein the adhesion agent is selectively disposed in a predetermined pattern between a surface of the substrate and the hydrophobization treatment; and disposing graphene to an unhydrophobized portion of the substrate.
The method for producing [[a]]the graphene structure according to Claim 12, wherein [[]]the hydrophobization treatment is performed by forming a film having hydrophobicity by applying or immobilizing a hydrophobization treatment agent to the predetermined portion the substrate.
1 7. The method for producing [[a]]the graphene structure according to Claim 12, the method comprising: reducing the graphene disposed to the substrate.
The method for producing [[a]] the graphene structure according to Claim 12, the method comprising: forming an electrode connected to the graphene disposed to the substrate.
A method for producing a graphene structure, the method comprising: preparing a substrate; subjecting a predetermined portion of the substrate to a base coating treatment comprising an adhesion agent and a hydrophobization treatment, the hydrophobization treatment comprising forming a resist or a halide having a predetermined pattern on the substrate before hydrophilization treatment of the substrate, wherein the adhesion agent is selectively disposed based on the predetermined pattern between a surface of the substrate and the hydrophobization treatment; subjecting the substrate to the hydrophilization treatment by plasma treatment with oxygen (0 2) plasma; removing the resist or the halide from the hydrophilized substrate; and disposing graphene to the hydrophilized portion of the substrate, wherein the hydrophilization treatment is performed so as to hydrophilize the surface of the substrate exposed from the resist or the halide pattern.
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Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with electrode
Materials described outside the worked examples.
graphene
resist
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,607,725Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 10. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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A method for producing a graphene structure, the method comprising: preparing a substrate; conducting a hydrophilization treatment on a predetermined portion of the substrate by plasma treatment with oxygen (0 2) plasma; conducting a base coating treatment comprising an adhesion agent on a surface of the substrate, wherein the adhesion agent is selectively disposed in a pattern at a predetermined portion of the substrate between [[a]]the surface of the substrate and a hydrophobization treatment; conducting the hydrophobization treatment by forming a resist or a halide having the pattern at the predetermined portion of the substrate; disposing the graphene on the surface of the substrate exposed from the pattern of the resist or the halide; removing the resist or the halide from the hydrophilized substrate; reducing the graphene disposed on the surface of the substrate; and forming an electrode connected to the graphene disposed on the surface of the substrate.
A method for producing a graphene structure, the method comprising: preparing a substrate comprising silicon coated by silicon dioxide (Si O 2); subjecting a predetermined portion of the substrate to a base coating treatment comprising an adhesion agent and a hydrophobization treatment, wherein the adhesion agent is selectively disposed in a predetermined pattern between a surface of the substrate and the hydrophobization treatment; and disposing graphene to an unhydrophobized portion of the substrate.
The method for producing [[a]]the graphene structure according to Claim 12, wherein [[]]the hydrophobization treatment is performed by forming a film having hydrophobicity by applying or immobilizing a hydrophobization treatment agent to the predetermined portion the substrate.
1 7. The method for producing [[a]]the graphene structure according to Claim 12, the method comprising: reducing the graphene disposed to the substrate.
The method for producing [[a]] the graphene structure according to Claim 12, the method comprising: forming an electrode connected to the graphene disposed to the substrate.
A method for producing a graphene structure, the method comprising: preparing a substrate; subjecting a predetermined portion of the substrate to a base coating treatment comprising an adhesion agent and a hydrophobization treatment, the hydrophobization treatment comprising forming a resist or a halide having a predetermined pattern on the substrate before hydrophilization treatment of the substrate, wherein the adhesion agent is selectively disposed based on the predetermined pattern between a surface of the substrate and the hydrophobization treatment; subjecting the substrate to the hydrophilization treatment by plasma treatment with oxygen (0 2) plasma; removing the resist or the halide from the hydrophilized substrate; and disposing graphene to the hydrophilized portion of the substrate, wherein the hydrophilization treatment is performed so as to hydrophilize the surface of the substrate exposed from the resist or the halide pattern.
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Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with electrode
Materials described outside the worked examples.
graphene
resist
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,607,725Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 10. canceled
canceled
canceled
canceled
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A method for producing a graphene structure, the method comprising: preparing a substrate; conducting a hydrophilization treatment on a predetermined portion of the substrate by plasma treatment with oxygen (0 2) plasma; conducting a base coating treatment comprising an adhesion agent on a surface of the substrate, wherein the adhesion agent is selectively disposed in a pattern at a predetermined portion of the substrate between [[a]]the surface of the substrate and a hydrophobization treatment; conducting the hydrophobization treatment by forming a resist or a halide having the pattern at the predetermined portion of the substrate; disposing the graphene on the surface of the substrate exposed from the pattern of the resist or the halide; removing the resist or the halide from the hydrophilized substrate; reducing the graphene disposed on the surface of the substrate; and forming an electrode connected to the graphene disposed on the surface of the substrate.
A method for producing a graphene structure, the method comprising: preparing a substrate comprising silicon coated by silicon dioxide (Si O 2); subjecting a predetermined portion of the substrate to a base coating treatment comprising an adhesion agent and a hydrophobization treatment, wherein the adhesion agent is selectively disposed in a predetermined pattern between a surface of the substrate and the hydrophobization treatment; and disposing graphene to an unhydrophobized portion of the substrate.
The method for producing [[a]]the graphene structure according to Claim 12, wherein [[]]the hydrophobization treatment is performed by forming a film having hydrophobicity by applying or immobilizing a hydrophobization treatment agent to the predetermined portion the substrate.
1 7. The method for producing [[a]]the graphene structure according to Claim 12, the method comprising: reducing the graphene disposed to the substrate.
The method for producing [[a]] the graphene structure according to Claim 12, the method comprising: forming an electrode connected to the graphene disposed to the substrate.
A method for producing a graphene structure, the method comprising: preparing a substrate; subjecting a predetermined portion of the substrate to a base coating treatment comprising an adhesion agent and a hydrophobization treatment, the hydrophobization treatment comprising forming a resist or a halide having a predetermined pattern on the substrate before hydrophilization treatment of the substrate, wherein the adhesion agent is selectively disposed based on the predetermined pattern between a surface of the substrate and the hydrophobization treatment; subjecting the substrate to the hydrophilization treatment by plasma treatment with oxygen (0 2) plasma; removing the resist or the halide from the hydrophilized substrate; and disposing graphene to the hydrophilized portion of the substrate, wherein the hydrophilization treatment is performed so as to hydrophilize the surface of the substrate exposed from the resist or the halide pattern.
canceled
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Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with electrode
Materials described outside the worked examples.
graphene
resist
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,607,725Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 10. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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A method for producing a graphene structure, the method comprising: preparing a substrate; conducting a hydrophilization treatment on a predetermined portion of the substrate by plasma treatment with oxygen (0 2) plasma; conducting a base coating treatment comprising an adhesion agent on a surface of the substrate, wherein the adhesion agent is selectively disposed in a pattern at a predetermined portion of the substrate between [[a]]the surface of the substrate and a hydrophobization treatment; conducting the hydrophobization treatment by forming a resist or a halide having the pattern at the predetermined portion of the substrate; disposing the graphene on the surface of the substrate exposed from the pattern of the resist or the halide; removing the resist or the halide from the hydrophilized substrate; reducing the graphene disposed on the surface of the substrate; and forming an electrode connected to the graphene disposed on the surface of the substrate.
A method for producing a graphene structure, the method comprising: preparing a substrate comprising silicon coated by silicon dioxide (Si O 2); subjecting a predetermined portion of the substrate to a base coating treatment comprising an adhesion agent and a hydrophobization treatment, wherein the adhesion agent is selectively disposed in a predetermined pattern between a surface of the substrate and the hydrophobization treatment; and disposing graphene to an unhydrophobized portion of the substrate.
The method for producing [[a]]the graphene structure according to Claim 12, wherein [[]]the hydrophobization treatment is performed by forming a film having hydrophobicity by applying or immobilizing a hydrophobization treatment agent to the predetermined portion the substrate.
1 7. The method for producing [[a]]the graphene structure according to Claim 12, the method comprising: reducing the graphene disposed to the substrate.
The method for producing [[a]] the graphene structure according to Claim 12, the method comprising: forming an electrode connected to the graphene disposed to the substrate.
A method for producing a graphene structure, the method comprising: preparing a substrate; subjecting a predetermined portion of the substrate to a base coating treatment comprising an adhesion agent and a hydrophobization treatment, the hydrophobization treatment comprising forming a resist or a halide having a predetermined pattern on the substrate before hydrophilization treatment of the substrate, wherein the adhesion agent is selectively disposed based on the predetermined pattern between a surface of the substrate and the hydrophobization treatment; subjecting the substrate to the hydrophilization treatment by plasma treatment with oxygen (0 2) plasma; removing the resist or the halide from the hydrophilized substrate; and disposing graphene to the hydrophilized portion of the substrate, wherein the hydrophilization treatment is performed so as to hydrophilize the surface of the substrate exposed from the resist or the halide pattern.
canceled
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Layer stacks claimed or described, ordered top of device to substrate.
graphene structure with electrode
Materials described outside the worked examples.
graphene
resist
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
halide
silicon
Si
silicon dioxide
SiO₂
silane coupling compound film/self-assembled monolayer/polymer compound film/halide film
graphene oxide
adhesion agent
halide
silicon
Si
silicon dioxide
SiO₂
silane coupling compound film/self-assembled monolayer/polymer compound film/halide film
graphene oxide
adhesion agent
halide
silicon
Si
silicon dioxide
SiO₂
silane coupling compound film/self-assembled monolayer/polymer compound film/halide film
graphene oxide
adhesion agent
halide
silicon
Si
silicon dioxide
SiO₂
silane coupling compound film/self-assembled monolayer/polymer compound film/halide film
graphene oxide
adhesion agent