Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

David J. Moss

doi:10.1002/admt.202201796

Paper details

Research paper

Experimental CharacterizationComputational Multiscale

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

David J. Moss

2026·10.1002/admt.202201796·arXiv:2603.07440

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

2 preparations2 characterizations7 properties4 figures

ExperimentalGOStudied MaterialSi₃N₄Studied MaterialSiO₂Substrate / Dielectric

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

1 characterization4 properties3 figures

ExperimentalSi₃N₄Studied MaterialSiO₂Substrate / Dielectric

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

2 preparations2 characterizations5 properties4 figures

ExperimentalGOStudied MaterialSi₃N₄Studied MaterialSiO₂Substrate / Dielectric

Materials

graphene oxide

Studied Material

Also known as

2D graphene oxideGO film

Variables

dimensionality= 2D film

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Film Thickness	GO monolayer film thickness	2nm	GO	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Film Thickness	GO bilayer film thickness	4nm	GO	Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Waveguide Width	W	1.6um	Si₃N₄	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Waveguide Height	H	0.72um	Si₃N₄	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Cladding Thickness	upper silica cladding thickness	2.3um	SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Optical Bandwidth	15-dB bandwidth	217.5nm	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Optical Bandwidth Improvement Factor	bandwidth improvement relative to uncoated device	2.4	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Peak Power	ultrashort optical pulse peak power	1100W	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Optical Band Gap	band gap	1.1eV	—	—	—	—
Optical Band Gap	band gap	5eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Film Thickness	GO monolayer film thickness	2nm	GO	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Film Thickness	GO bilayer film thickness	4nm	GO	Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Waveguide Width	W	1.6um	Si₃N₄	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Waveguide Height	H	0.72um	Si₃N₄	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Cladding Thickness	upper silica cladding thickness	2.3um	SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Optical Bandwidth	15-dB bandwidth	217.5nm	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Optical Bandwidth Improvement Factor	bandwidth improvement relative to uncoated device	2.4	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Peak Power	ultrashort optical pulse peak power	1100W	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Optical Band Gap	band gap	1.1eV	—	—	—	—
Optical Band Gap	band gap	5eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Film Thickness	GO monolayer film thickness	2nm	GO	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Film Thickness	GO bilayer film thickness	4nm	GO	Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Waveguide Width	W	1.6um	Si₃N₄	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Waveguide Height	H	0.72um	Si₃N₄	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Cladding Thickness	upper silica cladding thickness	2.3um	SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Optical Bandwidth	15-dB bandwidth	217.5nm	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Optical Bandwidth Improvement Factor	bandwidth improvement relative to uncoated device	2.4	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Peak Power	ultrashort optical pulse peak power	1100W	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Optical Band Gap	band gap	1.1eV	—	—	—	—
Optical Band Gap	band gap	5eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Film Thickness	GO monolayer film thickness	2nm	GO	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Film Thickness	GO bilayer film thickness	4nm	GO	Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Waveguide Width	W	1.6um	Si₃N₄	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Waveguide Height	H	0.72um	Si₃N₄	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Cladding Thickness	upper silica cladding thickness	2.3um	SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Optical Bandwidth	15-dB bandwidth	217.5nm	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Optical Bandwidth Improvement Factor	bandwidth improvement relative to uncoated device	2.4	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a		—
Peak Power	ultrashort optical pulse peak power	1100W	GO Si₃N₄ SiO₂	Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a Uncoated Si₃N₄ waveguide reference device with width 1.60 um Hybrid Si₃N₄ waveguide with two GO layers coated in a window		—
Optical Band Gap	band gap	1.1eV	—	—	—	—
Optical Band Gap	band gap	5eV	—	—	—	—

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

Samples

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

Materials

Why these are connected

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

Samples

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

Materials

Why these are connected

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

Samples

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

Materials

Why these are connected

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

Samples

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

Materials

Why these are connected

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

Samples

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

Materials

Why these are connected

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

Samples

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

Materials

Why these are connected

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

Samples

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

Materials

Why these are connected

Supercontinuum generation in 2D graphene oxide film coated SiN waveguides

Samples

Hybrid Si₃N₄ waveguide with a monolayer GO film coated in a window-opened region; waveguide width 1.60 um and height 0.72 um.

Uncoated Si₃N₄ waveguide reference device with width 1.60 um and height 0.72 um.

Hybrid Si₃N₄ waveguide with two GO layers coated in a window-opened region; width 1.60 um and height 0.72 um.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

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Processing

Characterization

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Simulations

Processing

Characterization

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Simulations