Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony; Ahmed S. Mayet; Ekaterina Ponizovskaya Devine; Soroush Ghandiparsi; Cesar Bartolo-Perez; Ahasan Ahamed; Amita Rawat; Hasina H. Mamtaz; Toshishige Yamada; Shih-Yuan Wang; M. Saif Islam

doi:10.48550/arxiv.2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

Research paper

Experimental CharacterizationOther Computational

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi et al.

2023·10.48550/arxiv.2306.05170·arXiv:2306.05170

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

3 preparations4 characterizations4 properties2 figures

ExperimentalSiStudied MaterialAlCapping Or ContactSiO₂Substrate / Dielectricsilicon dioxide on silicon substrateSubstrate / Dielectric

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

3 preparations4 characterizations4 properties2 figures

ExperimentalSiStudied MaterialAlCapping Or ContactSiO₂Substrate / Dielectricsilicon dioxide on silicon substrateSubstrate / Dielectric

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

3 preparations4 characterizations4 properties2 figures

ExperimentalSiStudied MaterialAlCapping Or ContactSiO₂Substrate / Dielectricsilicon dioxide on silicon substrateSubstrate / Dielectric

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

3 preparations4 characterizations4 properties2 figures

ExperimentalSiStudied MaterialAlCapping Or ContactSiO₂Substrate / Dielectricsilicon dioxide on silicon substrateSubstrate / Dielectric

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Samples

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

Why these are connected

Samples

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

Why these are connected

Samples

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

Why these are connected

Samples

CMOS-compatible metal-semiconductor-metal photodetector fabricated on a 1 µm-thick silicon-on-insulator active layer, with and without periodic photon-trapping cylindrical hole arrays; interdigitated aluminum contacts on the top silicon mesa.

Why these are connected