Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Depth | quantum well depth | 80nm | — | |||
| Interwire Separation | d | 150nm | — | |||
| Coupled Wire Length | l | 5um | — | |||
| Measurement Temperature | base lattice temperature | 10mK | — | |||
| Sheet Resistance | Rs | 10000000ohm | — | |||
| Measurement Frequency | lock-in frequency | 9 / 37.3Hz | — | |||
| Tunneling Resistance | interwire tunneling resistance | 30000000ohm | — | |||
| Drag Signal Anti Symmetric Fraction | anti-symmetric contribution relative to symmetric signal | 20% | — | |||
| Drag Response Nonreciprocal | Onsager reciprocity violation | nonreciprocal under layer and current direction reversal | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Depth | quantum well depth | 80nm | — | |||
| Interwire Separation | d | 150nm | — | |||
| Coupled Wire Length | l | 5um | — | |||
| Measurement Temperature | base lattice temperature | 10mK | — | |||
| Sheet Resistance | Rs | 10000000ohm | — | |||
| Measurement Frequency | lock-in frequency | 9 / 37.3Hz | — | |||
| Tunneling Resistance | interwire tunneling resistance | 30000000ohm | — | |||
| Drag Signal Anti Symmetric Fraction | anti-symmetric contribution relative to symmetric signal | 20% | — | |||
| Drag Response Nonreciprocal | Onsager reciprocity violation | nonreciprocal under layer and current direction reversal | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Depth | quantum well depth | 80nm | — | |||
| Interwire Separation | d | 150nm | — | |||
| Coupled Wire Length | l | 5um | — | |||
| Measurement Temperature | base lattice temperature | 10mK | — | |||
| Sheet Resistance | Rs | 10000000ohm | — | |||
| Measurement Frequency | lock-in frequency | 9 / 37.3Hz | — | |||
| Tunneling Resistance | interwire tunneling resistance | 30000000ohm | — | |||
| Drag Signal Anti Symmetric Fraction | anti-symmetric contribution relative to symmetric signal | 20% | — | |||
| Drag Response Nonreciprocal | Onsager reciprocity violation | nonreciprocal under layer and current direction reversal | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Depth | quantum well depth | 80nm | — | |||
| Interwire Separation | d | 150nm | — | |||
| Coupled Wire Length | l | 5um | — | |||
| Measurement Temperature | base lattice temperature | 10mK | — | |||
| Sheet Resistance | Rs | 10000000ohm | — | |||
| Measurement Frequency | lock-in frequency | 9 / 37.3Hz | — | |||
| Tunneling Resistance | interwire tunneling resistance | 30000000ohm | — | |||
| Drag Signal Anti Symmetric Fraction | anti-symmetric contribution relative to symmetric signal | 20% | — | |||
| Drag Response Nonreciprocal | Onsager reciprocity violation | nonreciprocal under layer and current direction reversal | — |