Universal scaling of adiabatic tunneling out of a shallow confinement potential

Austris Akmentinsh; David Reifert; Thomas Weimann; Klaus Pierz; Vyacheslavs Kashcheyevs; Niels Ubbelohde

doi:10.48550/ARXIV.2408.04565

Paper details

Research paper

Experimental CharacterizationComputational Kinetic ModelTheoretical

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Austris Akmentinsh, David Reifert, Thomas Weimann, Klaus Pierz et al.

arXiv·2024·10.48550/ARXIV.2408.04565·arXiv:2301.11295

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

1 characterization5 properties3 figures

ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlxGa₁-xAsStudied Material

Materials

GaAs/AlGaAs heterostructure

Studied Material

Also known as

dynamic quantum dot heterostructure

studied material

GaAs

Studied Material

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Universal scaling of adiabatic tunneling out of a shallow confinement potential | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Transport	sequence repetition rate	335Hz	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Transport	base temperature	20mK	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Energy Scale	microscopic potential scale ħΩb	1.6meV	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Temperature Scale	crossover temperature T₀	2.9K	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Operating Frequency	ground-state tunneling operating frequency limit	fewGHz	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—

Properties

Type	Label	Value	Material	Sample	Source
Transport	sequence repetition rate	335Hz	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Transport	base temperature	20mK	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Energy Scale	microscopic potential scale ħΩb	1.6meV	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Temperature Scale	crossover temperature T₀	2.9K	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Operating Frequency	ground-state tunneling operating frequency limit	fewGHz	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—

Properties

Type	Label	Value	Material	Sample	Source
Transport	sequence repetition rate	335Hz	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Transport	base temperature	20mK	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Energy Scale	microscopic potential scale ħΩb	1.6meV	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Temperature Scale	crossover temperature T₀	2.9K	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Operating Frequency	ground-state tunneling operating frequency limit	fewGHz	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—

Properties

Type	Label	Value	Material	Sample	Source
Transport	sequence repetition rate	335Hz	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Transport	base temperature	20mK	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Energy Scale	microscopic potential scale ħΩb	1.6meV	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Temperature Scale	crossover temperature T₀	2.9K	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—
Operating Frequency	ground-state tunneling operating frequency limit	fewGHz	GaAs/AlGaAs heterostructure GaAs AlxGa₁-xAs	Dynamic quantum dot defined in a shallow etched mesa channel	—

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Samples

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

Materials

Why these are connected

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Samples

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

Materials

Why these are connected

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Samples

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

Materials

Why these are connected

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Samples

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

Materials

Why these are connected

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Samples

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

Materials

Why these are connected

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Samples

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

Materials

Why these are connected

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Samples

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

Materials

Why these are connected

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Samples

Dynamic quantum dot defined in a shallow etched mesa channel of a GaAs/AlGaAs heterostructure with two metallic top gates forming longitudinal tunneling barriers.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations