Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

(Previously added) A pseudomorphic high electron mobility transistor (PHEMT) power device (10) comprising: a GaAs substrate (20); a GaAs buffer layer (19) that is on top of substrate (20); an I nGaAs channel layer (18) that is on top of substrate (20), layer (18) having doping on both sides to provide a higher sheet charge density for higher full channel current and output power, and to provide controllable conductivity between the source electrode (11) and drain electrode (12); an undoped A l GaAs spacer (17) that is on top of I nGaAs channel layer (18), spacer (17); a thin Silicon planar doping layer (16) that is on top of spacer (17); a lightly doped n Al GaAs layer (15) that is on top of layer (16) and layer (15) is a Schottky layer; an n + GaAs capping layer (14) that is on top of layer (15), layer (14) having a recess etched there through to expose an area on the top surface of the lightly doped n Al GaAs layer (15); a T-gate (13) that is on top of layer (15)and extends through the recess through capping layer (14), and the T-gate (13) having a first and a second opposite sides; a source electrode (11) that is on top of capping layer (14) on the first side of T-gate (13) and it forms an ohmic contact with layer (14); a drain electrode (12) that is on top of capping layer (14) on the second side of T-gate (13) and it forms an ohmic contact with layer (14); and 3 a protective insulating layer that is on top of the n + GaAs capping layer (14), but not on electrodes (11) and (12), to protect any exposed surface of layer (14); wherein the I nGaAs layer (18) has doping on both sides to provide a higher sheet charge density for higher full channel current and output power and this provides controllable conductivity between the source electrode (11) and the drain electrode (12).

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

(Previously added) A pseudomorphic high electron mobility transistor (PHEMT) power device (10) comprising: a GaAs substrate (20); a GaAs buffer layer (19) that is on top of substrate (20); an I nGaAs channel layer (18) that is on top of substrate (20), layer (18) having doping on both sides to provide a higher sheet charge density for higher full channel current and output power, and to provide controllable conductivity between the source electrode (11) and drain electrode (12); an undoped A l GaAs spacer (17) that is on top of I nGaAs channel layer (18), spacer (17); a thin Silicon planar doping layer (16) that is on top of spacer (17); a lightly doped n Al GaAs layer (15) that is on top of layer (16) and layer (15) is a Schottky layer; an n + GaAs capping layer (14) that is on top of layer (15), layer (14) having a recess etched there through to expose an area on the top surface of the lightly doped n Al GaAs layer (15); a T-gate (13) that is on top of layer (15)and extends through the recess through capping layer (14), and the T-gate (13) having a first and a second opposite sides; a source electrode (11) that is on top of capping layer (14) on the first side of T-gate (13) and it forms an ohmic contact with layer (14); a drain electrode (12) that is on top of capping layer (14) on the second side of T-gate (13) and it forms an ohmic contact with layer (14); and 3 a protective insulating layer that is on top of the n + GaAs capping layer (14), but not on electrodes (11) and (12), to protect any exposed surface of layer (14); wherein the I nGaAs layer (18) has doping on both sides to provide a higher sheet charge density for higher full channel current and output power and this provides controllable conductivity between the source electrode (11) and the drain electrode (12).

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

(Previously added) A pseudomorphic high electron mobility transistor (PHEMT) power device (10) comprising: a GaAs substrate (20); a GaAs buffer layer (19) that is on top of substrate (20); an I nGaAs channel layer (18) that is on top of substrate (20), layer (18) having doping on both sides to provide a higher sheet charge density for higher full channel current and output power, and to provide controllable conductivity between the source electrode (11) and drain electrode (12); an undoped A l GaAs spacer (17) that is on top of I nGaAs channel layer (18), spacer (17); a thin Silicon planar doping layer (16) that is on top of spacer (17); a lightly doped n Al GaAs layer (15) that is on top of layer (16) and layer (15) is a Schottky layer; an n + GaAs capping layer (14) that is on top of layer (15), layer (14) having a recess etched there through to expose an area on the top surface of the lightly doped n Al GaAs layer (15); a T-gate (13) that is on top of layer (15)and extends through the recess through capping layer (14), and the T-gate (13) having a first and a second opposite sides; a source electrode (11) that is on top of capping layer (14) on the first side of T-gate (13) and it forms an ohmic contact with layer (14); a drain electrode (12) that is on top of capping layer (14) on the second side of T-gate (13) and it forms an ohmic contact with layer (14); and 3 a protective insulating layer that is on top of the n + GaAs capping layer (14), but not on electrodes (11) and (12), to protect any exposed surface of layer (14); wherein the I nGaAs layer (18) has doping on both sides to provide a higher sheet charge density for higher full channel current and output power and this provides controllable conductivity between the source electrode (11) and the drain electrode (12).

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

Previously Cancelled

(Previously added) A pseudomorphic high electron mobility transistor (PHEMT) power device (10) comprising: a GaAs substrate (20); a GaAs buffer layer (19) that is on top of substrate (20); an I nGaAs channel layer (18) that is on top of substrate (20), layer (18) having doping on both sides to provide a higher sheet charge density for higher full channel current and output power, and to provide controllable conductivity between the source electrode (11) and drain electrode (12); an undoped A l GaAs spacer (17) that is on top of I nGaAs channel layer (18), spacer (17); a thin Silicon planar doping layer (16) that is on top of spacer (17); a lightly doped n Al GaAs layer (15) that is on top of layer (16) and layer (15) is a Schottky layer; an n + GaAs capping layer (14) that is on top of layer (15), layer (14) having a recess etched there through to expose an area on the top surface of the lightly doped n Al GaAs layer (15); a T-gate (13) that is on top of layer (15)and extends through the recess through capping layer (14), and the T-gate (13) having a first and a second opposite sides; a source electrode (11) that is on top of capping layer (14) on the first side of T-gate (13) and it forms an ohmic contact with layer (14); a drain electrode (12) that is on top of capping layer (14) on the second side of T-gate (13) and it forms an ohmic contact with layer (14); and 3 a protective insulating layer that is on top of the n + GaAs capping layer (14), but not on electrodes (11) and (12), to protect any exposed surface of layer (14); wherein the I nGaAs layer (18) has doping on both sides to provide a higher sheet charge density for higher full channel current and output power and this provides controllable conductivity between the source electrode (11) and the drain electrode (12).