Patent
US 12,288,686 B2GaN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME
Kenji Iso, Yuuki Enatsu, Kenji Shimoyama
MITSUBISHI CHEMICAL CORPORATION, Tokyo (JP)·Apr. 29, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,288,686 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a GaN substrate wafer according to one embodiment.
FIG. 2 is a cross-sectional view illustrating the GaN 25 substrate wafer according to one embodiment.
FIG. 3 is a cross-sectional view illustrating a GaN sub- strate wafer according to another embodiment.
FIG. 4(a), and an epitaxial film 65 200 which includes at least a first nitride semiconductor layer 210 and a second nitride semiconductor layer 220 is B₂ …
FIG. 5(b), a (0001)- oriented GaN film 2 of not less than 20 µm in thickness is grown on the Ga-polar surface of the c-plane GaN wafer 1 by HVPE to obtain a …
FIG. 6, the crystal growth apparatus includes an autoclave, and a dissolution zone and a growth zone, 10 which are partitioned from each other by a baffle, are …
FIG. 7. An HVPE apparatus 10 illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface ther-ebetween, wherein the second region has a minimum thickness of not less than 20 µm, the concentration of at least one element selected from Li, Na, K, F, Cl, Br, and I in the first region is 1×1015 atoms/cm3 or higher, and the second region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower; and 40 (c) the H concentration is 1×1017 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, satis-fying one condition selected from the following (1) to (3): (1) having a diameter of 50 mm to 55 mm and a thickness of 250 µm to 450 µm; (2) having a diameter of 100 mm to 105 mm and a thickness of 350 µm to 750 µm; and (3) having a diameter of 150 mm to 155 mm and a thickness of 450 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the minimum thickness of the second region is 300 µm or less.
The GaN substrate wafer according to claim 1, wherein a main surface of the Ga-polar side is a flat surface.
The GaN substrate wafer according to claim 1, wherein the first region has an H concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region has an O concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region has an F concentration of 1×1015 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein at least a portion of the second region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein at least a portion of the second region has a total donor impurity concentration of 1×1018 atoms/cm3 or higher.
An epitaxial wafer, comprising: the GaN substrate wafer according to claim 1; and a nitride semiconductor layer epitaxially grown on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing an epitaxial wafer, the method comprising the steps of: preparing the GaN substrate wafer according to claim 1; and epitaxially growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing a nitride semiconductor device, the method comprising the steps of: preparing the GaN substrate wafer according to claim 1; growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer to obtain an epitaxial wafer; and removing at least a portion of the first region of the GaN substrate wafer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
(0001)-oriented GaN substrate wafer
epitaxial wafer
Materials described outside the worked examples.
GaN substrate wafer
GaN
nitride semiconductor layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5(b), a (0001)- oriented GaN film 2 of not less than 20 µm in thickness is grown on the Ga-polar surface of the c-plane GaN wafer 1 by HVPE to obtain a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–55 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
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Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
Patent
Atlas literature
Patent
US 12,288,686 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a GaN substrate wafer according to one embodiment.
FIG. 2 is a cross-sectional view illustrating the GaN 25 substrate wafer according to one embodiment.
FIG. 3 is a cross-sectional view illustrating a GaN sub- strate wafer according to another embodiment.
FIG. 4(a), and an epitaxial film 65 200 which includes at least a first nitride semiconductor layer 210 and a second nitride semiconductor layer 220 is B₂ …
FIG. 5(b), a (0001)- oriented GaN film 2 of not less than 20 µm in thickness is grown on the Ga-polar surface of the c-plane GaN wafer 1 by HVPE to obtain a …
FIG. 6, the crystal growth apparatus includes an autoclave, and a dissolution zone and a growth zone, 10 which are partitioned from each other by a baffle, are …
FIG. 7. An HVPE apparatus 10 illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface ther-ebetween, wherein the second region has a minimum thickness of not less than 20 µm, the concentration of at least one element selected from Li, Na, K, F, Cl, Br, and I in the first region is 1×1015 atoms/cm3 or higher, and the second region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower; and 40 (c) the H concentration is 1×1017 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, satis-fying one condition selected from the following (1) to (3): (1) having a diameter of 50 mm to 55 mm and a thickness of 250 µm to 450 µm; (2) having a diameter of 100 mm to 105 mm and a thickness of 350 µm to 750 µm; and (3) having a diameter of 150 mm to 155 mm and a thickness of 450 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the minimum thickness of the second region is 300 µm or less.
The GaN substrate wafer according to claim 1, wherein a main surface of the Ga-polar side is a flat surface.
The GaN substrate wafer according to claim 1, wherein the first region has an H concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region has an O concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region has an F concentration of 1×1015 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein at least a portion of the second region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein at least a portion of the second region has a total donor impurity concentration of 1×1018 atoms/cm3 or higher.
An epitaxial wafer, comprising: the GaN substrate wafer according to claim 1; and a nitride semiconductor layer epitaxially grown on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing an epitaxial wafer, the method comprising the steps of: preparing the GaN substrate wafer according to claim 1; and epitaxially growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing a nitride semiconductor device, the method comprising the steps of: preparing the GaN substrate wafer according to claim 1; growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer to obtain an epitaxial wafer; and removing at least a portion of the first region of the GaN substrate wafer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
(0001)-oriented GaN substrate wafer
epitaxial wafer
Materials described outside the worked examples.
GaN substrate wafer
GaN
nitride semiconductor layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5(b), a (0001)- oriented GaN film 2 of not less than 20 µm in thickness is grown on the Ga-polar surface of the c-plane GaN wafer 1 by HVPE to obtain a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–55 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
Patent
Atlas literature
Patent
US 12,288,686 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a GaN substrate wafer according to one embodiment.
FIG. 2 is a cross-sectional view illustrating the GaN 25 substrate wafer according to one embodiment.
FIG. 3 is a cross-sectional view illustrating a GaN sub- strate wafer according to another embodiment.
FIG. 4(a), and an epitaxial film 65 200 which includes at least a first nitride semiconductor layer 210 and a second nitride semiconductor layer 220 is B₂ …
FIG. 5(b), a (0001)- oriented GaN film 2 of not less than 20 µm in thickness is grown on the Ga-polar surface of the c-plane GaN wafer 1 by HVPE to obtain a …
FIG. 6, the crystal growth apparatus includes an autoclave, and a dissolution zone and a growth zone, 10 which are partitioned from each other by a baffle, are …
FIG. 7. An HVPE apparatus 10 illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface ther-ebetween, wherein the second region has a minimum thickness of not less than 20 µm, the concentration of at least one element selected from Li, Na, K, F, Cl, Br, and I in the first region is 1×1015 atoms/cm3 or higher, and the second region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower; and 40 (c) the H concentration is 1×1017 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, satis-fying one condition selected from the following (1) to (3): (1) having a diameter of 50 mm to 55 mm and a thickness of 250 µm to 450 µm; (2) having a diameter of 100 mm to 105 mm and a thickness of 350 µm to 750 µm; and (3) having a diameter of 150 mm to 155 mm and a thickness of 450 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the minimum thickness of the second region is 300 µm or less.
The GaN substrate wafer according to claim 1, wherein a main surface of the Ga-polar side is a flat surface.
The GaN substrate wafer according to claim 1, wherein the first region has an H concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region has an O concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region has an F concentration of 1×1015 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein at least a portion of the second region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein at least a portion of the second region has a total donor impurity concentration of 1×1018 atoms/cm3 or higher.
An epitaxial wafer, comprising: the GaN substrate wafer according to claim 1; and a nitride semiconductor layer epitaxially grown on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing an epitaxial wafer, the method comprising the steps of: preparing the GaN substrate wafer according to claim 1; and epitaxially growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing a nitride semiconductor device, the method comprising the steps of: preparing the GaN substrate wafer according to claim 1; growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer to obtain an epitaxial wafer; and removing at least a portion of the first region of the GaN substrate wafer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
(0001)-oriented GaN substrate wafer
epitaxial wafer
Materials described outside the worked examples.
GaN substrate wafer
GaN
nitride semiconductor layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5(b), a (0001)- oriented GaN film 2 of not less than 20 µm in thickness is grown on the Ga-polar surface of the c-plane GaN wafer 1 by HVPE to obtain a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–55 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
Patent
Atlas literature
Patent
US 12,288,686 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a GaN substrate wafer according to one embodiment.
FIG. 2 is a cross-sectional view illustrating the GaN 25 substrate wafer according to one embodiment.
FIG. 3 is a cross-sectional view illustrating a GaN sub- strate wafer according to another embodiment.
FIG. 4(a), and an epitaxial film 65 200 which includes at least a first nitride semiconductor layer 210 and a second nitride semiconductor layer 220 is B₂ …
FIG. 5(b), a (0001)- oriented GaN film 2 of not less than 20 µm in thickness is grown on the Ga-polar surface of the c-plane GaN wafer 1 by HVPE to obtain a …
FIG. 6, the crystal growth apparatus includes an autoclave, and a dissolution zone and a growth zone, 10 which are partitioned from each other by a baffle, are …
FIG. 7. An HVPE apparatus 10 illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A (0001)-oriented GaN substrate wafer, comprising a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface ther-ebetween, wherein the second region has a minimum thickness of not less than 20 µm, the concentration of at least one element selected from Li, Na, K, F, Cl, Br, and I in the first region is 1×1015 atoms/cm3 or higher, and the second region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×1016 atoms/cm3 or higher; (b) the O concentration is 3×1016 atoms/cm3 or lower; and 40 (c) the H concentration is 1×1017 atoms/cm3 or lower.
The GaN substrate wafer according to claim 1, satis-fying one condition selected from the following (1) to (3): (1) having a diameter of 50 mm to 55 mm and a thickness of 250 µm to 450 µm; (2) having a diameter of 100 mm to 105 mm and a thickness of 350 µm to 750 µm; and (3) having a diameter of 150 mm to 155 mm and a thickness of 450 µm to 800 µm.
The GaN substrate wafer according to claim 1, wherein the minimum thickness of the second region is 300 µm or less.
The GaN substrate wafer according to claim 1, wherein a main surface of the Ga-polar side is a flat surface.
The GaN substrate wafer according to claim 1, wherein the first region has an H concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region has an O concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein the first region has an F concentration of 1×1015 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein at least a portion of the second region has a total compensating impurity concentration of 1×1017 atoms/cm3 or higher.
The GaN substrate wafer according to claim 1, wherein at least a portion of the second region has a total donor impurity concentration of 1×1018 atoms/cm3 or higher.
An epitaxial wafer, comprising: the GaN substrate wafer according to claim 1; and a nitride semiconductor layer epitaxially grown on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing an epitaxial wafer, the method comprising the steps of: preparing the GaN substrate wafer according to claim 1; and epitaxially growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer.
A method of producing a nitride semiconductor device, the method comprising the steps of: preparing the GaN substrate wafer according to claim 1; growing a nitride semiconductor layer on the main surface of the Ga-polar side of the GaN substrate wafer to obtain an epitaxial wafer; and removing at least a portion of the first region of the GaN substrate wafer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
(0001)-oriented GaN substrate wafer
epitaxial wafer
Materials described outside the worked examples.
GaN substrate wafer
GaN
nitride semiconductor layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5(b), a (0001)- oriented GaN film 2 of not less than 20 µm in thickness is grown on the Ga-polar surface of the c-plane GaN wafer 1 by HVPE to obtain a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–55 mm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
| — |
Thickness | 100–105 mm | — |
Thickness | 350–750 µm | — |
Thickness | 150–155 mm | — |
Thickness | 450–800 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 1 µm | — |
Cited non-patent literature · 4
| — |
Thickness | 100–105 mm | — |
Thickness | 350–750 µm | — |
Thickness | 150–155 mm | — |
Thickness | 450–800 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 1 µm | — |
Cited non-patent literature · 4
| — |
Thickness | 100–105 mm | — |
Thickness | 350–750 µm | — |
Thickness | 150–155 mm | — |
Thickness | 450–800 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 1 µm | — |
Cited non-patent literature · 4
| — |
Thickness | 100–105 mm | — |
Thickness | 350–750 µm | — |
Thickness | 150–155 mm | — |
Thickness | 450–800 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 1 µm | — |
Cited non-patent literature · 4