Patent
US 9,153,439Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate
Shohei Kumegawa
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,153,439Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Other etching apparatus may be used as long as it can contain the Group III nitride semiconductor V 1 and the etching solution 5 in the container and …
FIG. 2. The Group III nitride semiconductor V 1 comprises an underlayer Ul, a mask layer M 1, and a protective film PF. A protective film PF is formed on a first …
FIG. 3, the second surface of the underlayer U 1 is flat. That is, the exposed portions El and the unexposed portions E₂ are on the same flat surface. However, …
FIG. 4, concave portions X₂ are formed on the Group III nitride semiconductor V2, which are deeper than before etching. A facet plane can be exposed in the …
FIG. 5) having concave portions X₃ and no mask layer. Here, a facet plane F₃ can be exposed in the concave portion X4. The melt temperature at that time may be …
FIG. 6, triangle concave portions X₅ may be formed. The concave portion X₅ has a truncated triangular pyramid shape or a triangle prism shape. Each side length …
FIG. 7, the semiconductor crystal production apparatus 10 includes a pressure container 20, a reaction vessel 11, a crucible 12, a heating apparatus 13, supply …
FIG. 8 is a sketch for describing a seed crystal preparation step employed in the method for producing a Group III nitride semiconductor crystal according to …
FIG. 9.
FIG. 10. A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4. When the temperature and the pressure …
FIG. 11. Each concave portion X 1 2 has inclined planes G 1 3, a bottom surface G14, and side surfaces 143. The inclined plane G 1 3 corresponds to a (10-11) …
FIG. 12, the GaN layer 150 is grown such that the facet plane of the concave portion X₁₂ is not buried with the Group III nitride semiconductor. [0088) 3. …
FIG. 13 shows the Ga N layer 150 and the seed crystal T 11 after separation. Thus, the GaN layer 150 is readily removed from the GaN substrate G ll, by virtue …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for etching a Group III nitride semiconductor, the method comprising: forming a protective film on a first surface being a N polarity surface of the Group III nitride semiconductor; and etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na.
The method for etching a Group III nitride semiconductor according to claim 1, wherein the method further comprising forming a mask layer made of Al xInyGa(1x y) N (0 < X, 0 < Y, X + Y 1) on a portion of the second surface of the Group III nitride semiconductor; and in etching a Group III nitride semiconductor, the second surface of the Group III nitride semiconductor is etched after the mask layer was formed.
The method for etching a Group III nitride 48 semiconductor according to claim 1, wherein the concentration of Group III metal in the melt containing at least Na is 0 mol% to 5 mol%.
7. A method for producing a Group III nitride semiconductor crystal, the method comprising: forming a protective film on a first surface being a N polarity surface of Group III nitride semiconductor; etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na, to thereby form a seed crystal; and growing a target layer of Group III nitride semiconductor crystal on the seed crystal in a molten mixture containing at least Group III metal and Na.
The method for producing a Group III nitride semiconductor crystal according to claim 7, the method further comprising: forming a mask layer made of Al XInyGa(XY) N (0 < X, 0 Y, X + Y 1) on a portion of the second surface of the Group III nitride semiconductor, to thereby form an unexposed portion of the second surface which is covered with the mask layer and the remaining portion being an exposed portion of the second surface which is not covered with the mask layer; and etching the exposed portion of the second surface of the Group III nitride semiconductor after the mask layer was formed.
A method for producing a GaN substrate, the method comprising: forming a protective film on a first surface being a N polarity surface of Group III nitride semiconductor; etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na, to thereby form a seed crystal; growing a GaN crystal on the seed crystal in a molten mixture containing at least Ga and Na; and separating the GaN crystal from the seed crystal. 51
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
Materials described outside the worked examples.
Group III nitride semiconductor
Na melt
Na
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10. A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4. When the temperature and the pressure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0.5–10 hour | — |
Temperature | 700–830 °C |
Table 1
03 to 0.50 as shown in Table 1.
p. 7
Table 3
Notably, the amounts of the elements shown in Table 3 are merely examples, and other amounts may be employed.
p. 14
Table 4
A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4.
p. 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,153,439Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Other etching apparatus may be used as long as it can contain the Group III nitride semiconductor V 1 and the etching solution 5 in the container and …
FIG. 2. The Group III nitride semiconductor V 1 comprises an underlayer Ul, a mask layer M 1, and a protective film PF. A protective film PF is formed on a first …
FIG. 3, the second surface of the underlayer U 1 is flat. That is, the exposed portions El and the unexposed portions E₂ are on the same flat surface. However, …
FIG. 4, concave portions X₂ are formed on the Group III nitride semiconductor V2, which are deeper than before etching. A facet plane can be exposed in the …
FIG. 5) having concave portions X₃ and no mask layer. Here, a facet plane F₃ can be exposed in the concave portion X4. The melt temperature at that time may be …
FIG. 6, triangle concave portions X₅ may be formed. The concave portion X₅ has a truncated triangular pyramid shape or a triangle prism shape. Each side length …
FIG. 7, the semiconductor crystal production apparatus 10 includes a pressure container 20, a reaction vessel 11, a crucible 12, a heating apparatus 13, supply …
FIG. 8 is a sketch for describing a seed crystal preparation step employed in the method for producing a Group III nitride semiconductor crystal according to …
FIG. 9.
FIG. 10. A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4. When the temperature and the pressure …
FIG. 11. Each concave portion X 1 2 has inclined planes G 1 3, a bottom surface G14, and side surfaces 143. The inclined plane G 1 3 corresponds to a (10-11) …
FIG. 12, the GaN layer 150 is grown such that the facet plane of the concave portion X₁₂ is not buried with the Group III nitride semiconductor. [0088) 3. …
FIG. 13 shows the Ga N layer 150 and the seed crystal T 11 after separation. Thus, the GaN layer 150 is readily removed from the GaN substrate G ll, by virtue …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for etching a Group III nitride semiconductor, the method comprising: forming a protective film on a first surface being a N polarity surface of the Group III nitride semiconductor; and etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na.
The method for etching a Group III nitride semiconductor according to claim 1, wherein the method further comprising forming a mask layer made of Al xInyGa(1x y) N (0 < X, 0 < Y, X + Y 1) on a portion of the second surface of the Group III nitride semiconductor; and in etching a Group III nitride semiconductor, the second surface of the Group III nitride semiconductor is etched after the mask layer was formed.
The method for etching a Group III nitride 48 semiconductor according to claim 1, wherein the concentration of Group III metal in the melt containing at least Na is 0 mol% to 5 mol%.
7. A method for producing a Group III nitride semiconductor crystal, the method comprising: forming a protective film on a first surface being a N polarity surface of Group III nitride semiconductor; etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na, to thereby form a seed crystal; and growing a target layer of Group III nitride semiconductor crystal on the seed crystal in a molten mixture containing at least Group III metal and Na.
The method for producing a Group III nitride semiconductor crystal according to claim 7, the method further comprising: forming a mask layer made of Al XInyGa(XY) N (0 < X, 0 Y, X + Y 1) on a portion of the second surface of the Group III nitride semiconductor, to thereby form an unexposed portion of the second surface which is covered with the mask layer and the remaining portion being an exposed portion of the second surface which is not covered with the mask layer; and etching the exposed portion of the second surface of the Group III nitride semiconductor after the mask layer was formed.
A method for producing a GaN substrate, the method comprising: forming a protective film on a first surface being a N polarity surface of Group III nitride semiconductor; etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na, to thereby form a seed crystal; growing a GaN crystal on the seed crystal in a molten mixture containing at least Ga and Na; and separating the GaN crystal from the seed crystal. 51
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
Materials described outside the worked examples.
Group III nitride semiconductor
Na melt
Na
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10. A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4. When the temperature and the pressure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0.5–10 hour | — |
Temperature | 700–830 °C |
Table 1
03 to 0.50 as shown in Table 1.
p. 7
Table 3
Notably, the amounts of the elements shown in Table 3 are merely examples, and other amounts may be employed.
p. 14
Table 4
A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4.
p. 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,153,439Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Other etching apparatus may be used as long as it can contain the Group III nitride semiconductor V 1 and the etching solution 5 in the container and …
FIG. 2. The Group III nitride semiconductor V 1 comprises an underlayer Ul, a mask layer M 1, and a protective film PF. A protective film PF is formed on a first …
FIG. 3, the second surface of the underlayer U 1 is flat. That is, the exposed portions El and the unexposed portions E₂ are on the same flat surface. However, …
FIG. 4, concave portions X₂ are formed on the Group III nitride semiconductor V2, which are deeper than before etching. A facet plane can be exposed in the …
FIG. 5) having concave portions X₃ and no mask layer. Here, a facet plane F₃ can be exposed in the concave portion X4. The melt temperature at that time may be …
FIG. 6, triangle concave portions X₅ may be formed. The concave portion X₅ has a truncated triangular pyramid shape or a triangle prism shape. Each side length …
FIG. 7, the semiconductor crystal production apparatus 10 includes a pressure container 20, a reaction vessel 11, a crucible 12, a heating apparatus 13, supply …
FIG. 8 is a sketch for describing a seed crystal preparation step employed in the method for producing a Group III nitride semiconductor crystal according to …
FIG. 9.
FIG. 10. A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4. When the temperature and the pressure …
FIG. 11. Each concave portion X 1 2 has inclined planes G 1 3, a bottom surface G14, and side surfaces 143. The inclined plane G 1 3 corresponds to a (10-11) …
FIG. 12, the GaN layer 150 is grown such that the facet plane of the concave portion X₁₂ is not buried with the Group III nitride semiconductor. [0088) 3. …
FIG. 13 shows the Ga N layer 150 and the seed crystal T 11 after separation. Thus, the GaN layer 150 is readily removed from the GaN substrate G ll, by virtue …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for etching a Group III nitride semiconductor, the method comprising: forming a protective film on a first surface being a N polarity surface of the Group III nitride semiconductor; and etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na.
The method for etching a Group III nitride semiconductor according to claim 1, wherein the method further comprising forming a mask layer made of Al xInyGa(1x y) N (0 < X, 0 < Y, X + Y 1) on a portion of the second surface of the Group III nitride semiconductor; and in etching a Group III nitride semiconductor, the second surface of the Group III nitride semiconductor is etched after the mask layer was formed.
The method for etching a Group III nitride 48 semiconductor according to claim 1, wherein the concentration of Group III metal in the melt containing at least Na is 0 mol% to 5 mol%.
7. A method for producing a Group III nitride semiconductor crystal, the method comprising: forming a protective film on a first surface being a N polarity surface of Group III nitride semiconductor; etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na, to thereby form a seed crystal; and growing a target layer of Group III nitride semiconductor crystal on the seed crystal in a molten mixture containing at least Group III metal and Na.
The method for producing a Group III nitride semiconductor crystal according to claim 7, the method further comprising: forming a mask layer made of Al XInyGa(XY) N (0 < X, 0 Y, X + Y 1) on a portion of the second surface of the Group III nitride semiconductor, to thereby form an unexposed portion of the second surface which is covered with the mask layer and the remaining portion being an exposed portion of the second surface which is not covered with the mask layer; and etching the exposed portion of the second surface of the Group III nitride semiconductor after the mask layer was formed.
A method for producing a GaN substrate, the method comprising: forming a protective film on a first surface being a N polarity surface of Group III nitride semiconductor; etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na, to thereby form a seed crystal; growing a GaN crystal on the seed crystal in a molten mixture containing at least Ga and Na; and separating the GaN crystal from the seed crystal. 51
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
Materials described outside the worked examples.
Group III nitride semiconductor
Na melt
Na
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10. A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4. When the temperature and the pressure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0.5–10 hour | — |
Temperature | 700–830 °C |
Table 1
03 to 0.50 as shown in Table 1.
p. 7
Table 3
Notably, the amounts of the elements shown in Table 3 are merely examples, and other amounts may be employed.
p. 14
Table 4
A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4.
p. 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,153,439Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Other etching apparatus may be used as long as it can contain the Group III nitride semiconductor V 1 and the etching solution 5 in the container and …
FIG. 2. The Group III nitride semiconductor V 1 comprises an underlayer Ul, a mask layer M 1, and a protective film PF. A protective film PF is formed on a first …
FIG. 3, the second surface of the underlayer U 1 is flat. That is, the exposed portions El and the unexposed portions E₂ are on the same flat surface. However, …
FIG. 4, concave portions X₂ are formed on the Group III nitride semiconductor V2, which are deeper than before etching. A facet plane can be exposed in the …
FIG. 5) having concave portions X₃ and no mask layer. Here, a facet plane F₃ can be exposed in the concave portion X4. The melt temperature at that time may be …
FIG. 6, triangle concave portions X₅ may be formed. The concave portion X₅ has a truncated triangular pyramid shape or a triangle prism shape. Each side length …
FIG. 7, the semiconductor crystal production apparatus 10 includes a pressure container 20, a reaction vessel 11, a crucible 12, a heating apparatus 13, supply …
FIG. 8 is a sketch for describing a seed crystal preparation step employed in the method for producing a Group III nitride semiconductor crystal according to …
FIG. 9.
FIG. 10. A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4. When the temperature and the pressure …
FIG. 11. Each concave portion X 1 2 has inclined planes G 1 3, a bottom surface G14, and side surfaces 143. The inclined plane G 1 3 corresponds to a (10-11) …
FIG. 12, the GaN layer 150 is grown such that the facet plane of the concave portion X₁₂ is not buried with the Group III nitride semiconductor. [0088) 3. …
FIG. 13 shows the Ga N layer 150 and the seed crystal T 11 after separation. Thus, the GaN layer 150 is readily removed from the GaN substrate G ll, by virtue …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for etching a Group III nitride semiconductor, the method comprising: forming a protective film on a first surface being a N polarity surface of the Group III nitride semiconductor; and etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na.
The method for etching a Group III nitride semiconductor according to claim 1, wherein the method further comprising forming a mask layer made of Al xInyGa(1x y) N (0 < X, 0 < Y, X + Y 1) on a portion of the second surface of the Group III nitride semiconductor; and in etching a Group III nitride semiconductor, the second surface of the Group III nitride semiconductor is etched after the mask layer was formed.
The method for etching a Group III nitride 48 semiconductor according to claim 1, wherein the concentration of Group III metal in the melt containing at least Na is 0 mol% to 5 mol%.
7. A method for producing a Group III nitride semiconductor crystal, the method comprising: forming a protective film on a first surface being a N polarity surface of Group III nitride semiconductor; etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na, to thereby form a seed crystal; and growing a target layer of Group III nitride semiconductor crystal on the seed crystal in a molten mixture containing at least Group III metal and Na.
The method for producing a Group III nitride semiconductor crystal according to claim 7, the method further comprising: forming a mask layer made of Al XInyGa(XY) N (0 < X, 0 Y, X + Y 1) on a portion of the second surface of the Group III nitride semiconductor, to thereby form an unexposed portion of the second surface which is covered with the mask layer and the remaining portion being an exposed portion of the second surface which is not covered with the mask layer; and etching the exposed portion of the second surface of the Group III nitride semiconductor after the mask layer was formed.
A method for producing a GaN substrate, the method comprising: forming a protective film on a first surface being a N polarity surface of Group III nitride semiconductor; etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na, to thereby form a seed crystal; growing a GaN crystal on the seed crystal in a molten mixture containing at least Ga and Na; and separating the GaN crystal from the seed crystal. 51
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
Materials described outside the worked examples.
Group III nitride semiconductor
Na melt
Na
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10. A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4. When the temperature and the pressure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0.5–10 hour | — |
Temperature | 700–830 °C |
Table 1
03 to 0.50 as shown in Table 1.
p. 7
Table 3
Notably, the amounts of the elements shown in Table 3 are merely examples, and other amounts may be employed.
p. 14
Table 4
A semiconductor crystal is grown using the materials shown in Table 3 under 41 the conditions shown in Table 4.
p. 15
Related documents with shared materials, methods, properties, or citations.
protective film
AlxInyGa(1-x-y)N mask layer
AlxInyGa(1-x-y)N
AlGaN
Al₂O₃
ZrO₂
TiO₂
GaN crystal
GaN
Ga-Na molten mixture
| — |
Thickness | ≤ 2 nm | — |
Temperature | 600–1000 °C | — |
protective film
AlxInyGa(1-x-y)N mask layer
AlxInyGa(1-x-y)N
AlGaN
Al₂O₃
ZrO₂
TiO₂
GaN crystal
GaN
Ga-Na molten mixture
| — |
Thickness | ≤ 2 nm | — |
Temperature | 600–1000 °C | — |
protective film
AlxInyGa(1-x-y)N mask layer
AlxInyGa(1-x-y)N
AlGaN
Al₂O₃
ZrO₂
TiO₂
GaN crystal
GaN
Ga-Na molten mixture
| — |
Thickness | ≤ 2 nm | — |
Temperature | 600–1000 °C | — |
protective film
AlxInyGa(1-x-y)N mask layer
AlxInyGa(1-x-y)N
AlGaN
Al₂O₃
ZrO₂
TiO₂
GaN crystal
GaN
Ga-Na molten mixture
| — |
Thickness | ≤ 2 nm | — |
Temperature | 600–1000 °C | — |