GaN LAMINATE AND METHOD OF MANUFACTURING THE SAME

Hajime FUJIKURA

Patent

Atlas literature

Patent

US 10,903,074

GaN LAMINATE AND METHOD OF MANUFACTURING THE SAME

Hajime FUJIKURA

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 0

FIG. 0 SVG 16284333.04-22-2019.JUVLDKIBLXEAPX0.SPEC.4.10.629.1314.642.1347.svg 0.11 0.043 Chemistry Black and white 0 A t o

FIG. 1

FIG. 1 is a schematic cross-sectional view showing a GaN lam inate 30. The GaN la in inate 30 (also referred to as a laminate 30) has a GaN substrate 10 (also …

FIG. 2

FIG. 2 is a. ﬂow chart schematically s hov ing a method of manufa ctur ing the laminate according to;arn embodiment.

FIG. 3

FIG. 3 is a schematic conﬁguration view showing an HVPE apparatus.

FIG. 4

FIG. 4B. The proﬁle shows t hat a steppedstr uc ture is formed in t he m acro ste p -macro terrace. Alt h oug h it SVG …

FIG. 5

process chamber schematic

FIG. 5; is, an enlarged view of FI G. 4A.FIG.. 6 is a schematic view of the macr & step-ma c ro terrace. [003:1]

FIG. 6

FIG. 6. Nani ely, it is found that the epi-layer surface ' of the laminate s ho wn in FIG S. 4A to 4E is a surface having a m acro step- macro terrace. The mac …

FIG. 7

performance graph

FIG. 7C.

FIG. 8

FIG. 8, the r ms value o f 100 pit square bec om es 50 nm o r m o re due to surface r o ughn ess- and an eﬀect of SVG …

FIG. 9

FIGS. 9A a n d 9B (la' minate havin g the o ﬀ-an gl e of 0.3*) v as produced by gr owing the epi-layer wit h a thickness of 30 p m under condition 1 on the …

FIG. 10

FIG. 10 C is an AFM image of a region of 5 pm squa re o n the epi-layer surfac e in the laminate having the o ﬀ angle of 0 SVG …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 12 dependent

1
IndependentGaNGaNGaN laminate
A GaN laminate, comprising: a GaN substrate containing GaN single crystal and having a low index crystal plane as c- plane closest to a main surface, the c-plane having a Ga polarity; and a GaN layer epitaxially grown directly on the main surface of the GaN substrate, and having a thickness of 10 p m or more, wherein a surface of the GaN layer has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a predetermined direction and a terrace are alternately arranged. Currently amended
1. 2
  Dependent← claim 1GaNGaN laminate
  The GaN laminate according to claim 1, wherein the step has a height of bimolecular layers of GaN. Original
2. 3
  Dependent← claim 1GaNGaNGaN laminate
  The GaN laminate according to claim 1, wherein the substrate has a ﬁrst region in which an oﬀ-angle is 0.3 or less which is an angle formed by a normal direction of the main surface and c-axis direction, and the step has a height of bimolecular layers of GaN on the surface of the GaN layer grown on the ﬁrst region. Original
3. 4
  Dependent← claim 1GaNGaN laminate
  The GaN laminate according to claim 1, wherein the step extends in a direction orthogonal to a-axis direction. Original
4. 5
  Dependent← claim 1GaNGaNGaN laminate
  The GaN laminate according to claim 1, wherein the substrate has a second region in the main surface, the second region having an oﬀ-angle inclined by more than 0.3 ° in the a- axis direction, which is an angle formed by a normal direction of the main surface and c-axis direction, and the step extends in the direction orthogonal to the a-axis direction. Original
5. 6
  Dependent← claim 1GaNGaN laminate
  The GaN laminate according to claim 1, wherein the step extends in a direction orthogonal to m -axis direction. Original
6. 7
  Dependent← claim 1GaNGaNGaN laminate
  The GaN laminate according to claim 1, wherein the substrate has a third region in the main surface, the third region having an oﬀ angle inclined by more than 0.3 in m -axis direction, which is an angle formed by a normal direction of the main surface and c-axis direction, and the step extends in a direction orthogonal to the m -axis direction on the surface of the GaN layer grown on the third region. Original
7. 8
  Dependent← claim 1GaNGaN laminate
  The GaN laminate according to claim 1, wherein on the surface of the GaN layer, rms value of a surface roughness obtained by AFM measurement in a 100 m square region is less than 10 nm. Original
8. 9
  Dependent← claim 1GaNGaN laminate
  The GaN laminate according to claim 1, wherein on the surface of the GaN layer, rms value of a surface roughness obtained by AFM measurement in a 5 m square region is 0.3 nm or less. Original
10
IndependentGaNGaNGaN laminate
A method for manufacturing a GaN laminate, comprising: preparing a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and epitaxially growing a GaN layer having a thickness of 10 p m or more on the main surface of the GaN substrate by H V PE, wherein in epitaxially growing the GaN layer, the GaN layer is grown, with a growth temperature set to 1050 0 C or more and 1200 0 C or less, and a step-terrace structure is formed on the surface of the GaN layer, the step-terrace structure being the structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a predetermined direction, and a terrace are alternately arranged. Withdrawn
1. 11
  Dependent← claim 10GaN
  The method for manufacturing a GaN laminate according to claim 10, wherein in epitaxially growing the GaN layer, a range of growth temperature Tg and V/III ratio is set to (V/III ratio) < 0.2 Tg-209. Withdrawn
2. 12
  Dependent← claim 10GaNGaNGaN laminate
  The method for manufacturing a GaN laminate according to claim 10, wherein in preparing the GaN substrate, the GaN substrate is prepared, having a ﬁrst region with an oﬀ- angle of 0.3 or less, which is an angle formed by a normal direction of the main surface and c- axis direction, and in epitaxially growing the GaN layer, the step-terrace structure in which the step has a height of a bimolecular layer of GaN, is formed on the ﬁrst region. Withdrawn
3. 13
  Dependent← claim 10GaNGaNGaN laminate
  The method for manufacturing a GaN laminate according to claim 10, wherein in preparing the GaN substrate, the GaN substrate is prepared, having a second region in the main surface, the second region having an oﬀ-angle inclined by more than 0.3 ° in a-axis direction, which is an angle formed by a normal direction of the main surface and c-axis direction, and in epitaxially growing the GaN layer, the step-terrace structure in which the step extends in a direction orthogonal to the a-axis direction, is formed on the second region. Withdrawn
4. 14
  Dependent← claim 10GaNGaNGaN laminate
  The method for manufacturing a GaN laminate according to claim 10, wherein in preparing the GaN substrate, the GaN substrate is prepared, having a third region in the main surface, the third region having an oﬀ-angle inclined by more than 0.3 in m -axis direction, which is an angle formed by a normal direction of the main surface and c-axis direction, and in epitaxially growing the GaN layer, the step-terrace structure in which the step extends in a direction orthogonal to the m -axis direction, is formed on the third region. Withdrawn

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN laminate

GaNepitaxial layer

GaNsubstrate

Materials

Materials described outside the worked examples.

GaN substrate

GaN

Substrate

Epitaxial Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Hvpe Growth

Step 1

Temperature

1050, 1200°C

Process details

method:HVPE

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

thickness

Thickness

FIG. 1 is a schematic cross-sectional view showing a GaN lam inate 30. The GaN la in inate 30 (also referred to as a laminate 30) has a GaN substrate 10 (also …

Figure references

FIG. 1

GaNGaN

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Surface Roughness Rms	10 nm	GaN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN LAMINATE AND METHOD OF MANUFACTURING THE SAME | Matter42 Literature