Patent
Atlas literature
Patent
US 11,821,108 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1). The crystal growth was performed as follows: a) A hexagonal GaN crystal with the lateral size of 2 inches and thickness of 0.7 mm was used as a seed. …
FIG. 2). At the same time, the seed is naturally overgrown in the vertical <000-1> direction, but the vertical growth rate is much lower than the lateral one. …
FIG. 3. The same reference numbers were used in
FIG. 4 shows, in a schematic manner, a newly grown crystal at the end of the crystallization process according to the embodiment shown in
FIG. 5 shows, in a schematic manner, a crystal seed with sides wrapped with metal foil according to another embodi- ment of the method of the invention.
FIG. 6A. Example 2 In the second example a GaN crystal was grown by the ammonothermal method using a 4-5NAg foil of thickness of 0.02 mm-0.03 mm as the metal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing process, wherein before the crystal seed undergoes Rail the growing process the method includes a step of wrapping the crystal seed with at least one layer of a metal foil so that all the side surfaces, defined as (10-10) and (11-20) planes of the crystal seed are surrounded by the foil, whereby the wrapped metal foil extending above the crystal seed is shaped into the desired shape of the newly grown crystal and the height of metallic borders formed by the metal foil wrapped around the crystal seed defines the height of a newly grown crystal.
The method according to claim 1, wherein the metal foil is made of metal selected from the group including nickel, silver, molybdenum, titanium and tungsten or metal alloy selected from the group including Ag—Cu, Ag—Ni, Ag—Ti, Cu—Ni, Cu—Ti, Ni—Ti.
The method according to claim 1, wherein the metal foil has a thickness between about 0.005 mm and about 0.05 mm, preferably in the range from about 0.015 mm to about 0.03 mm.
The method according to claim 1, wherein the step of wrapping the crystal seed includes also covering the bottom side of the crystal seed with the metal foil.
The method according to claim 1, wherein the crystal seed is placed on a crystal seed holder.
The method of claim 1, wherein at least one metal foil layer is used to wrap the crystal seed and at least one metal foil layer is used to give the newly grown crystal a specified desired shape.
The method of claim 1, wherein at least one metal foil layer used to wrap the crystal seed is made from metal different from at least one metal foil layer used to give the newly grown crystal a specified desired shape.
The method according to claim 1, wherein the tem-perature gradient between the dissolution and crystallization zones of an ammonothermal reactor is in the range of 150 K to 250 K.
The method according to claim 1, wherein the molar ratio of gallium to ammonia is in a range from 0.1 to 0.2. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material3 process steps
Table 1 compares key process parameters and results for classical, non-optimal, and optimal ammonothermal GaN crystal growth runs. Classical run: no metal border foil, mineralizer Na:NH3=0.04, standard GaN feedstock, 7 crucibles, 62 days, dissolution zone 382°C, growth zone 573°C, temperature gradient 191°C, average thickness gain 1399 µm, growth rate 26 µm/day. Non-optimal run: metal border foil used, Na mineralizer, +20% feedstock, 9 crucibles, 62 days, dissolution zone 361°C, growth zone 596°C, temperature gradient 235°C, average thickness gain 2978 µm, growth rate 55 µm/day. Optimal run: metal border foil used, Na mineralizer, +35% feedstock, 9 crucibles, 76 days, dissolution zone 368°C, growth zone 596°C, temperature gradient 228°C, average thickness gain 3019 µm, growth rate 44 µm/day.
Materials described outside the worked examples.
metal foil
nickel foil
Ni
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1). The crystal growth was performed as follows: a) A hexagonal GaN crystal with the lateral size of 2 inches and thickness of 0.7 mm was used as a seed. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average thickness gain — classical run (no foil) | 1399 µm | GaN |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,821,108 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1). The crystal growth was performed as follows: a) A hexagonal GaN crystal with the lateral size of 2 inches and thickness of 0.7 mm was used as a seed. …
FIG. 2). At the same time, the seed is naturally overgrown in the vertical <000-1> direction, but the vertical growth rate is much lower than the lateral one. …
FIG. 3. The same reference numbers were used in
FIG. 4 shows, in a schematic manner, a newly grown crystal at the end of the crystallization process according to the embodiment shown in
FIG. 5 shows, in a schematic manner, a crystal seed with sides wrapped with metal foil according to another embodi- ment of the method of the invention.
FIG. 6A. Example 2 In the second example a GaN crystal was grown by the ammonothermal method using a 4-5NAg foil of thickness of 0.02 mm-0.03 mm as the metal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing process, wherein before the crystal seed undergoes Rail the growing process the method includes a step of wrapping the crystal seed with at least one layer of a metal foil so that all the side surfaces, defined as (10-10) and (11-20) planes of the crystal seed are surrounded by the foil, whereby the wrapped metal foil extending above the crystal seed is shaped into the desired shape of the newly grown crystal and the height of metallic borders formed by the metal foil wrapped around the crystal seed defines the height of a newly grown crystal.
The method according to claim 1, wherein the metal foil is made of metal selected from the group including nickel, silver, molybdenum, titanium and tungsten or metal alloy selected from the group including Ag—Cu, Ag—Ni, Ag—Ti, Cu—Ni, Cu—Ti, Ni—Ti.
The method according to claim 1, wherein the metal foil has a thickness between about 0.005 mm and about 0.05 mm, preferably in the range from about 0.015 mm to about 0.03 mm.
The method according to claim 1, wherein the step of wrapping the crystal seed includes also covering the bottom side of the crystal seed with the metal foil.
The method according to claim 1, wherein the crystal seed is placed on a crystal seed holder.
The method of claim 1, wherein at least one metal foil layer is used to wrap the crystal seed and at least one metal foil layer is used to give the newly grown crystal a specified desired shape.
The method of claim 1, wherein at least one metal foil layer used to wrap the crystal seed is made from metal different from at least one metal foil layer used to give the newly grown crystal a specified desired shape.
The method according to claim 1, wherein the tem-perature gradient between the dissolution and crystallization zones of an ammonothermal reactor is in the range of 150 K to 250 K.
The method according to claim 1, wherein the molar ratio of gallium to ammonia is in a range from 0.1 to 0.2. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material3 process steps
Table 1 compares key process parameters and results for classical, non-optimal, and optimal ammonothermal GaN crystal growth runs. Classical run: no metal border foil, mineralizer Na:NH3=0.04, standard GaN feedstock, 7 crucibles, 62 days, dissolution zone 382°C, growth zone 573°C, temperature gradient 191°C, average thickness gain 1399 µm, growth rate 26 µm/day. Non-optimal run: metal border foil used, Na mineralizer, +20% feedstock, 9 crucibles, 62 days, dissolution zone 361°C, growth zone 596°C, temperature gradient 235°C, average thickness gain 2978 µm, growth rate 55 µm/day. Optimal run: metal border foil used, Na mineralizer, +35% feedstock, 9 crucibles, 76 days, dissolution zone 368°C, growth zone 596°C, temperature gradient 228°C, average thickness gain 3019 µm, growth rate 44 µm/day.
Materials described outside the worked examples.
metal foil
nickel foil
Ni
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1). The crystal growth was performed as follows: a) A hexagonal GaN crystal with the lateral size of 2 inches and thickness of 0.7 mm was used as a seed. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average thickness gain — classical run (no foil) | 1399 µm | GaN |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,821,108 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1). The crystal growth was performed as follows: a) A hexagonal GaN crystal with the lateral size of 2 inches and thickness of 0.7 mm was used as a seed. …
FIG. 2). At the same time, the seed is naturally overgrown in the vertical <000-1> direction, but the vertical growth rate is much lower than the lateral one. …
FIG. 3. The same reference numbers were used in
FIG. 4 shows, in a schematic manner, a newly grown crystal at the end of the crystallization process according to the embodiment shown in
FIG. 5 shows, in a schematic manner, a crystal seed with sides wrapped with metal foil according to another embodi- ment of the method of the invention.
FIG. 6A. Example 2 In the second example a GaN crystal was grown by the ammonothermal method using a 4-5NAg foil of thickness of 0.02 mm-0.03 mm as the metal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing process, wherein before the crystal seed undergoes Rail the growing process the method includes a step of wrapping the crystal seed with at least one layer of a metal foil so that all the side surfaces, defined as (10-10) and (11-20) planes of the crystal seed are surrounded by the foil, whereby the wrapped metal foil extending above the crystal seed is shaped into the desired shape of the newly grown crystal and the height of metallic borders formed by the metal foil wrapped around the crystal seed defines the height of a newly grown crystal.
The method according to claim 1, wherein the metal foil is made of metal selected from the group including nickel, silver, molybdenum, titanium and tungsten or metal alloy selected from the group including Ag—Cu, Ag—Ni, Ag—Ti, Cu—Ni, Cu—Ti, Ni—Ti.
The method according to claim 1, wherein the metal foil has a thickness between about 0.005 mm and about 0.05 mm, preferably in the range from about 0.015 mm to about 0.03 mm.
The method according to claim 1, wherein the step of wrapping the crystal seed includes also covering the bottom side of the crystal seed with the metal foil.
The method according to claim 1, wherein the crystal seed is placed on a crystal seed holder.
The method of claim 1, wherein at least one metal foil layer is used to wrap the crystal seed and at least one metal foil layer is used to give the newly grown crystal a specified desired shape.
The method of claim 1, wherein at least one metal foil layer used to wrap the crystal seed is made from metal different from at least one metal foil layer used to give the newly grown crystal a specified desired shape.
The method according to claim 1, wherein the tem-perature gradient between the dissolution and crystallization zones of an ammonothermal reactor is in the range of 150 K to 250 K.
The method according to claim 1, wherein the molar ratio of gallium to ammonia is in a range from 0.1 to 0.2. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material3 process steps
Table 1 compares key process parameters and results for classical, non-optimal, and optimal ammonothermal GaN crystal growth runs. Classical run: no metal border foil, mineralizer Na:NH3=0.04, standard GaN feedstock, 7 crucibles, 62 days, dissolution zone 382°C, growth zone 573°C, temperature gradient 191°C, average thickness gain 1399 µm, growth rate 26 µm/day. Non-optimal run: metal border foil used, Na mineralizer, +20% feedstock, 9 crucibles, 62 days, dissolution zone 361°C, growth zone 596°C, temperature gradient 235°C, average thickness gain 2978 µm, growth rate 55 µm/day. Optimal run: metal border foil used, Na mineralizer, +35% feedstock, 9 crucibles, 76 days, dissolution zone 368°C, growth zone 596°C, temperature gradient 228°C, average thickness gain 3019 µm, growth rate 44 µm/day.
Materials described outside the worked examples.
metal foil
nickel foil
Ni
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1). The crystal growth was performed as follows: a) A hexagonal GaN crystal with the lateral size of 2 inches and thickness of 0.7 mm was used as a seed. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average thickness gain — classical run (no foil) | 1399 µm | GaN |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,821,108 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1). The crystal growth was performed as follows: a) A hexagonal GaN crystal with the lateral size of 2 inches and thickness of 0.7 mm was used as a seed. …
FIG. 2). At the same time, the seed is naturally overgrown in the vertical <000-1> direction, but the vertical growth rate is much lower than the lateral one. …
FIG. 3. The same reference numbers were used in
FIG. 4 shows, in a schematic manner, a newly grown crystal at the end of the crystallization process according to the embodiment shown in
FIG. 5 shows, in a schematic manner, a crystal seed with sides wrapped with metal foil according to another embodi- ment of the method of the invention.
FIG. 6A. Example 2 In the second example a GaN crystal was grown by the ammonothermal method using a 4-5NAg foil of thickness of 0.02 mm-0.03 mm as the metal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing process, wherein before the crystal seed undergoes Rail the growing process the method includes a step of wrapping the crystal seed with at least one layer of a metal foil so that all the side surfaces, defined as (10-10) and (11-20) planes of the crystal seed are surrounded by the foil, whereby the wrapped metal foil extending above the crystal seed is shaped into the desired shape of the newly grown crystal and the height of metallic borders formed by the metal foil wrapped around the crystal seed defines the height of a newly grown crystal.
The method according to claim 1, wherein the metal foil is made of metal selected from the group including nickel, silver, molybdenum, titanium and tungsten or metal alloy selected from the group including Ag—Cu, Ag—Ni, Ag—Ti, Cu—Ni, Cu—Ti, Ni—Ti.
The method according to claim 1, wherein the metal foil has a thickness between about 0.005 mm and about 0.05 mm, preferably in the range from about 0.015 mm to about 0.03 mm.
The method according to claim 1, wherein the step of wrapping the crystal seed includes also covering the bottom side of the crystal seed with the metal foil.
The method according to claim 1, wherein the crystal seed is placed on a crystal seed holder.
The method of claim 1, wherein at least one metal foil layer is used to wrap the crystal seed and at least one metal foil layer is used to give the newly grown crystal a specified desired shape.
The method of claim 1, wherein at least one metal foil layer used to wrap the crystal seed is made from metal different from at least one metal foil layer used to give the newly grown crystal a specified desired shape.
The method according to claim 1, wherein the tem-perature gradient between the dissolution and crystallization zones of an ammonothermal reactor is in the range of 150 K to 250 K.
The method according to claim 1, wherein the molar ratio of gallium to ammonia is in a range from 0.1 to 0.2. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material3 process steps
Table 1 compares key process parameters and results for classical, non-optimal, and optimal ammonothermal GaN crystal growth runs. Classical run: no metal border foil, mineralizer Na:NH3=0.04, standard GaN feedstock, 7 crucibles, 62 days, dissolution zone 382°C, growth zone 573°C, temperature gradient 191°C, average thickness gain 1399 µm, growth rate 26 µm/day. Non-optimal run: metal border foil used, Na mineralizer, +20% feedstock, 9 crucibles, 62 days, dissolution zone 361°C, growth zone 596°C, temperature gradient 235°C, average thickness gain 2978 µm, growth rate 55 µm/day. Optimal run: metal border foil used, Na mineralizer, +35% feedstock, 9 crucibles, 76 days, dissolution zone 368°C, growth zone 596°C, temperature gradient 228°C, average thickness gain 3019 µm, growth rate 44 µm/day.
Materials described outside the worked examples.
metal foil
nickel foil
Ni
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1). The crystal growth was performed as follows: a) A hexagonal GaN crystal with the lateral size of 2 inches and thickness of 0.7 mm was used as a seed. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average thickness gain — classical run (no foil) | 1399 µm | GaN |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
silver foil
Ag
molybdenum foil
Mo
titanium foil
Ti
tungsten foil
W
Ag-Cu alloy foil
Ag-Cu
Ag-Ni alloy foil
Ag-Ni
Ag-Ti alloy foil
Ag-Ti
Cu-Ni alloy foil
Cu-Ni
Cu-Ti alloy foil
Cu-Ti
Ni-Ti alloy foil
Ni-Ti
AlN
InN
FIG. 6A. Example 2 In the second example a GaN crystal was grown by the ammonothermal method using a 4-5NAg foil of thickness of 0.02 mm-0.03 mm as the metal …
| 26 µm/day |
GaN |
average thickness gain — non-optimal run (with foil) | 2978 µm | GaN |
growth rate — non-optimal run (with foil) | 55 µm/day | GaN |
average thickness gain — optimal run (with foil) | 3019 µm | GaN |
growth rate — optimal run (with foil) | 44 µm/day | GaN |
Temperature | 573–920 K | — |
Thickness | 0.005–0.05 mm | — |
Thickness | 0.015–0.03 mm | — |
Temperature | 572–920 K | — |
Temperature | 150–250 K | — |
Cited non-patent literature · 3
silver foil
Ag
molybdenum foil
Mo
titanium foil
Ti
tungsten foil
W
Ag-Cu alloy foil
Ag-Cu
Ag-Ni alloy foil
Ag-Ni
Ag-Ti alloy foil
Ag-Ti
Cu-Ni alloy foil
Cu-Ni
Cu-Ti alloy foil
Cu-Ti
Ni-Ti alloy foil
Ni-Ti
AlN
InN
FIG. 6A. Example 2 In the second example a GaN crystal was grown by the ammonothermal method using a 4-5NAg foil of thickness of 0.02 mm-0.03 mm as the metal …
| 26 µm/day |
GaN |
average thickness gain — non-optimal run (with foil) | 2978 µm | GaN |
growth rate — non-optimal run (with foil) | 55 µm/day | GaN |
average thickness gain — optimal run (with foil) | 3019 µm | GaN |
growth rate — optimal run (with foil) | 44 µm/day | GaN |
Temperature | 573–920 K | — |
Thickness | 0.005–0.05 mm | — |
Thickness | 0.015–0.03 mm | — |
Temperature | 572–920 K | — |
Temperature | 150–250 K | — |
Cited non-patent literature · 3
silver foil
Ag
molybdenum foil
Mo
titanium foil
Ti
tungsten foil
W
Ag-Cu alloy foil
Ag-Cu
Ag-Ni alloy foil
Ag-Ni
Ag-Ti alloy foil
Ag-Ti
Cu-Ni alloy foil
Cu-Ni
Cu-Ti alloy foil
Cu-Ti
Ni-Ti alloy foil
Ni-Ti
AlN
InN
FIG. 6A. Example 2 In the second example a GaN crystal was grown by the ammonothermal method using a 4-5NAg foil of thickness of 0.02 mm-0.03 mm as the metal …
| 26 µm/day |
GaN |
average thickness gain — non-optimal run (with foil) | 2978 µm | GaN |
growth rate — non-optimal run (with foil) | 55 µm/day | GaN |
average thickness gain — optimal run (with foil) | 3019 µm | GaN |
growth rate — optimal run (with foil) | 44 µm/day | GaN |
Temperature | 573–920 K | — |
Thickness | 0.005–0.05 mm | — |
Thickness | 0.015–0.03 mm | — |
Temperature | 572–920 K | — |
Temperature | 150–250 K | — |
Cited non-patent literature · 3
silver foil
Ag
molybdenum foil
Mo
titanium foil
Ti
tungsten foil
W
Ag-Cu alloy foil
Ag-Cu
Ag-Ni alloy foil
Ag-Ni
Ag-Ti alloy foil
Ag-Ti
Cu-Ni alloy foil
Cu-Ni
Cu-Ti alloy foil
Cu-Ti
Ni-Ti alloy foil
Ni-Ti
AlN
InN
FIG. 6A. Example 2 In the second example a GaN crystal was grown by the ammonothermal method using a 4-5NAg foil of thickness of 0.02 mm-0.03 mm as the metal …
| 26 µm/day |
GaN |
average thickness gain — non-optimal run (with foil) | 2978 µm | GaN |
growth rate — non-optimal run (with foil) | 55 µm/day | GaN |
average thickness gain — optimal run (with foil) | 3019 µm | GaN |
growth rate — optimal run (with foil) | 44 µm/day | GaN |
Temperature | 573–920 K | — |
Thickness | 0.005–0.05 mm | — |
Thickness | 0.015–0.03 mm | — |
Temperature | 572–920 K | — |
Temperature | 150–250 K | — |
Cited non-patent literature · 3
