Patent
US 9,406,792SEMICONDUCTOR DEVICE
Hisashi SAITO
US
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Patent
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US 9,406,792Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a configuration of a semiconductor device 1 SVG …
FIG. 2 is a diagram illustrating a boosting effect of a threshold voltage of the semiconductor device according to the first embodiment; 5 [0007]
FIG. 3 is a diagram illustrating a function and an effect of the semiconductor device according to the first embodiment; [0008]
FIG. 4 is a diagram illustrating a relation of a composition and a thickness of a barrier layer of an HEMT 10 and a two-dimensional electron gas density; [0009]
FIG. 5 is a schematic cross-sectional view illustrating a configuration of a semiconductor device according to a second embodiment; [0010]
FIG. 6 is a schematic cross-sectional view 15 illustrating a configuration of a semiconductor device according to a third embodiment; and [0011]
FIG. 7 is a schematic cross- sectional view illustrating a configuration of a semiconductor device according to a fourth embodiment.
FIG. 25 4, a horizontal axis shows the thickness of the barrier layer and a vertical axis shows the two-dimensional electron gas density of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The device according to claim 1, wherein a thickness of the first semiconductor layer is larger than a thickness of the second semiconductor
SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.8.353.1246.535.1290.svg 0.147 0.607 Chemistry Black and white Claim 3: The device according to claim 1, wherein the first GaN based semiconductor has a composition represented by SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.10.1293.1637.1374.1677.svg 0.133 0.27 Chemistry Black and white lnyiGa l SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.10.1539.1654.1639.1682.svg 0.093 0.333 Chemistry Black and white) N (0 < X₁ < 1, 0 < Y₁ < 1, and 0 < X₁ + Y₁ < 1), the second GaN based semiconductor has a composition represented by A lx 2 Iny 2 Ga l (X 2 + Y₂)N (0 SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.12.876.1859.1010.1896.svg 0.123 0.447 Chemistry Black and white 1, 0 < Y₂ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.12.1214.1859.1269.1895.svg 0.12 0.183 Chemistry Black and white, and 0 < X₂ + Y₂ <1), the third GaN based semiconductor has a composition represented by A l X₃ In y3 Ga l (x3 + y3) N (0 < X₃ < 1, 0 < Y₃ < 1, and 0 < X₃ + Y₃ < 1), the fourth GaN based semiconductor has a composition represented by SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.415.2191.646.2231.svg 0.133 0.77 Chemistry Black and white (x 4 + y4) N (0 < X₄ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.987.2190.1038.2226.svg 0.12 0.17 Chemistry Black and white, 0 < Y₄ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.1216.2188.1270.2225.svg 0.123 0.18 Chemistry Black and white, and 0 < X₄ + Y₄ <1), and the fifth GaN based semiconductor has a composition represented by A l X₅ InysGa l (xs+ys) N (0 < X₅ < 1, 0 < Y₅ < 1, and 0 < X₅ + Y₅ < 1).
The device according to claim 3, wherein X 1 + Y l, X₂ + Y2, X₃ + Y3, X₄ + Y4, and X₅ + Y₅ satisfy relations of X 1 + Y 1 > X₂ + Y2, X₃ + Y₃ > X₂ + Y2, and X₅ +Y5>X₄+Y4. 8 A pplication No. 14/870,198 Reply to Office Action of
The device according to claim 3, wherein X 1, X3, and X₅ satisfy a relation of X₅ > X₃ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.3.4.775.604.800.637.svg 0.11 0.083 Chemistry Black and white X1.
The device according to claim 3, wherein Y₃ and Y₅ satisfy a relation of Y₅ > Y3.
The device according to claim 1, wherein a thickness of the second semiconductor layer is 300 nm or less.
The device according to claim 1, wherein the fifth semiconductor layer is n-type semiconductor.
The device according to claim 1, wherein a thickness of the A lN layer is 1 nm to 10 nm.
A semiconductor device comprising: a first semiconductor layer of a first GaN based semiconductor; a second semiconductor layer of a second GaN based semiconductor provided above the first semiconductor layer, the second GaN based semiconductor having a band gap narrower than that of the first GaN based semiconductor; 9 Application No. 14/870,198 Reply to Office Action of a third semiconductor layer of a third GaN based semiconductor provided above the second semiconductor layer, the third GaN based semiconductor having a band gap wider than that of the second GaN based semiconductor; a fourth semiconductor layer of a fourth GaN based semiconductor provided above the third semiconductor layer, the fourth GaN based semiconductor having a band gap narrower than that of the third GaN based semiconductor; a fifth semiconductor layer of a fifth GaN based semiconductor provided above the fourth semiconductor layer, the fifth GaN based semiconductor having a band gap wider than that of the fourth GaN based semiconductor; an A l N layer provided between the third semiconductor layer and the fourth semiconductor layer; a gate dielectric provided directly on the A I N layer, the fourth semiconductor layer, and the fifth semiconductor layer; a gate electrode provided on the gate dielectric; a source electrode provided above the fifth semiconductor layer; and a drain electrode provided above the fifth semiconductor layer at the side opposite to the side of the gate source electrode with respect to the source gate electrode.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device (claims 1–9 structure)
Materials described outside the worked examples.
first GaN based semiconductor
second GaN based semiconductor
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a diagram illustrating a relation of a composition and a thickness of a barrier layer of an HEMT 10 and a two-dimensional electron gas density; [0009]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–300 nm | — |
Thickness | 5–30 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,406,792Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a configuration of a semiconductor device 1 SVG …
FIG. 2 is a diagram illustrating a boosting effect of a threshold voltage of the semiconductor device according to the first embodiment; 5 [0007]
FIG. 3 is a diagram illustrating a function and an effect of the semiconductor device according to the first embodiment; [0008]
FIG. 4 is a diagram illustrating a relation of a composition and a thickness of a barrier layer of an HEMT 10 and a two-dimensional electron gas density; [0009]
FIG. 5 is a schematic cross-sectional view illustrating a configuration of a semiconductor device according to a second embodiment; [0010]
FIG. 6 is a schematic cross-sectional view 15 illustrating a configuration of a semiconductor device according to a third embodiment; and [0011]
FIG. 7 is a schematic cross- sectional view illustrating a configuration of a semiconductor device according to a fourth embodiment.
FIG. 25 4, a horizontal axis shows the thickness of the barrier layer and a vertical axis shows the two-dimensional electron gas density of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The device according to claim 1, wherein a thickness of the first semiconductor layer is larger than a thickness of the second semiconductor
SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.8.353.1246.535.1290.svg 0.147 0.607 Chemistry Black and white Claim 3: The device according to claim 1, wherein the first GaN based semiconductor has a composition represented by SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.10.1293.1637.1374.1677.svg 0.133 0.27 Chemistry Black and white lnyiGa l SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.10.1539.1654.1639.1682.svg 0.093 0.333 Chemistry Black and white) N (0 < X₁ < 1, 0 < Y₁ < 1, and 0 < X₁ + Y₁ < 1), the second GaN based semiconductor has a composition represented by A lx 2 Iny 2 Ga l (X 2 + Y₂)N (0 SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.12.876.1859.1010.1896.svg 0.123 0.447 Chemistry Black and white 1, 0 < Y₂ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.12.1214.1859.1269.1895.svg 0.12 0.183 Chemistry Black and white, and 0 < X₂ + Y₂ <1), the third GaN based semiconductor has a composition represented by A l X₃ In y3 Ga l (x3 + y3) N (0 < X₃ < 1, 0 < Y₃ < 1, and 0 < X₃ + Y₃ < 1), the fourth GaN based semiconductor has a composition represented by SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.415.2191.646.2231.svg 0.133 0.77 Chemistry Black and white (x 4 + y4) N (0 < X₄ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.987.2190.1038.2226.svg 0.12 0.17 Chemistry Black and white, 0 < Y₄ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.1216.2188.1270.2225.svg 0.123 0.18 Chemistry Black and white, and 0 < X₄ + Y₄ <1), and the fifth GaN based semiconductor has a composition represented by A l X₅ InysGa l (xs+ys) N (0 < X₅ < 1, 0 < Y₅ < 1, and 0 < X₅ + Y₅ < 1).
The device according to claim 3, wherein X 1 + Y l, X₂ + Y2, X₃ + Y3, X₄ + Y4, and X₅ + Y₅ satisfy relations of X 1 + Y 1 > X₂ + Y2, X₃ + Y₃ > X₂ + Y2, and X₅ +Y5>X₄+Y4. 8 A pplication No. 14/870,198 Reply to Office Action of
The device according to claim 3, wherein X 1, X3, and X₅ satisfy a relation of X₅ > X₃ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.3.4.775.604.800.637.svg 0.11 0.083 Chemistry Black and white X1.
The device according to claim 3, wherein Y₃ and Y₅ satisfy a relation of Y₅ > Y3.
The device according to claim 1, wherein a thickness of the second semiconductor layer is 300 nm or less.
The device according to claim 1, wherein the fifth semiconductor layer is n-type semiconductor.
The device according to claim 1, wherein a thickness of the A lN layer is 1 nm to 10 nm.
A semiconductor device comprising: a first semiconductor layer of a first GaN based semiconductor; a second semiconductor layer of a second GaN based semiconductor provided above the first semiconductor layer, the second GaN based semiconductor having a band gap narrower than that of the first GaN based semiconductor; 9 Application No. 14/870,198 Reply to Office Action of a third semiconductor layer of a third GaN based semiconductor provided above the second semiconductor layer, the third GaN based semiconductor having a band gap wider than that of the second GaN based semiconductor; a fourth semiconductor layer of a fourth GaN based semiconductor provided above the third semiconductor layer, the fourth GaN based semiconductor having a band gap narrower than that of the third GaN based semiconductor; a fifth semiconductor layer of a fifth GaN based semiconductor provided above the fourth semiconductor layer, the fifth GaN based semiconductor having a band gap wider than that of the fourth GaN based semiconductor; an A l N layer provided between the third semiconductor layer and the fourth semiconductor layer; a gate dielectric provided directly on the A I N layer, the fourth semiconductor layer, and the fifth semiconductor layer; a gate electrode provided on the gate dielectric; a source electrode provided above the fifth semiconductor layer; and a drain electrode provided above the fifth semiconductor layer at the side opposite to the side of the gate source electrode with respect to the source gate electrode.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device (claims 1–9 structure)
Materials described outside the worked examples.
first GaN based semiconductor
second GaN based semiconductor
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a diagram illustrating a relation of a composition and a thickness of a barrier layer of an HEMT 10 and a two-dimensional electron gas density; [0009]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–300 nm | — |
Thickness | 5–30 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,406,792Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a configuration of a semiconductor device 1 SVG …
FIG. 2 is a diagram illustrating a boosting effect of a threshold voltage of the semiconductor device according to the first embodiment; 5 [0007]
FIG. 3 is a diagram illustrating a function and an effect of the semiconductor device according to the first embodiment; [0008]
FIG. 4 is a diagram illustrating a relation of a composition and a thickness of a barrier layer of an HEMT 10 and a two-dimensional electron gas density; [0009]
FIG. 5 is a schematic cross-sectional view illustrating a configuration of a semiconductor device according to a second embodiment; [0010]
FIG. 6 is a schematic cross-sectional view 15 illustrating a configuration of a semiconductor device according to a third embodiment; and [0011]
FIG. 7 is a schematic cross- sectional view illustrating a configuration of a semiconductor device according to a fourth embodiment.
FIG. 25 4, a horizontal axis shows the thickness of the barrier layer and a vertical axis shows the two-dimensional electron gas density of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The device according to claim 1, wherein a thickness of the first semiconductor layer is larger than a thickness of the second semiconductor
SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.8.353.1246.535.1290.svg 0.147 0.607 Chemistry Black and white Claim 3: The device according to claim 1, wherein the first GaN based semiconductor has a composition represented by SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.10.1293.1637.1374.1677.svg 0.133 0.27 Chemistry Black and white lnyiGa l SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.10.1539.1654.1639.1682.svg 0.093 0.333 Chemistry Black and white) N (0 < X₁ < 1, 0 < Y₁ < 1, and 0 < X₁ + Y₁ < 1), the second GaN based semiconductor has a composition represented by A lx 2 Iny 2 Ga l (X 2 + Y₂)N (0 SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.12.876.1859.1010.1896.svg 0.123 0.447 Chemistry Black and white 1, 0 < Y₂ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.12.1214.1859.1269.1895.svg 0.12 0.183 Chemistry Black and white, and 0 < X₂ + Y₂ <1), the third GaN based semiconductor has a composition represented by A l X₃ In y3 Ga l (x3 + y3) N (0 < X₃ < 1, 0 < Y₃ < 1, and 0 < X₃ + Y₃ < 1), the fourth GaN based semiconductor has a composition represented by SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.415.2191.646.2231.svg 0.133 0.77 Chemistry Black and white (x 4 + y4) N (0 < X₄ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.987.2190.1038.2226.svg 0.12 0.17 Chemistry Black and white, 0 < Y₄ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.1216.2188.1270.2225.svg 0.123 0.18 Chemistry Black and white, and 0 < X₄ + Y₄ <1), and the fifth GaN based semiconductor has a composition represented by A l X₅ InysGa l (xs+ys) N (0 < X₅ < 1, 0 < Y₅ < 1, and 0 < X₅ + Y₅ < 1).
The device according to claim 3, wherein X 1 + Y l, X₂ + Y2, X₃ + Y3, X₄ + Y4, and X₅ + Y₅ satisfy relations of X 1 + Y 1 > X₂ + Y2, X₃ + Y₃ > X₂ + Y2, and X₅ +Y5>X₄+Y4. 8 A pplication No. 14/870,198 Reply to Office Action of
The device according to claim 3, wherein X 1, X3, and X₅ satisfy a relation of X₅ > X₃ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.3.4.775.604.800.637.svg 0.11 0.083 Chemistry Black and white X1.
The device according to claim 3, wherein Y₃ and Y₅ satisfy a relation of Y₅ > Y3.
The device according to claim 1, wherein a thickness of the second semiconductor layer is 300 nm or less.
The device according to claim 1, wherein the fifth semiconductor layer is n-type semiconductor.
The device according to claim 1, wherein a thickness of the A lN layer is 1 nm to 10 nm.
A semiconductor device comprising: a first semiconductor layer of a first GaN based semiconductor; a second semiconductor layer of a second GaN based semiconductor provided above the first semiconductor layer, the second GaN based semiconductor having a band gap narrower than that of the first GaN based semiconductor; 9 Application No. 14/870,198 Reply to Office Action of a third semiconductor layer of a third GaN based semiconductor provided above the second semiconductor layer, the third GaN based semiconductor having a band gap wider than that of the second GaN based semiconductor; a fourth semiconductor layer of a fourth GaN based semiconductor provided above the third semiconductor layer, the fourth GaN based semiconductor having a band gap narrower than that of the third GaN based semiconductor; a fifth semiconductor layer of a fifth GaN based semiconductor provided above the fourth semiconductor layer, the fifth GaN based semiconductor having a band gap wider than that of the fourth GaN based semiconductor; an A l N layer provided between the third semiconductor layer and the fourth semiconductor layer; a gate dielectric provided directly on the A I N layer, the fourth semiconductor layer, and the fifth semiconductor layer; a gate electrode provided on the gate dielectric; a source electrode provided above the fifth semiconductor layer; and a drain electrode provided above the fifth semiconductor layer at the side opposite to the side of the gate source electrode with respect to the source gate electrode.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device (claims 1–9 structure)
Materials described outside the worked examples.
first GaN based semiconductor
second GaN based semiconductor
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a diagram illustrating a relation of a composition and a thickness of a barrier layer of an HEMT 10 and a two-dimensional electron gas density; [0009]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–300 nm | — |
Thickness | 5–30 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,406,792Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a configuration of a semiconductor device 1 SVG …
FIG. 2 is a diagram illustrating a boosting effect of a threshold voltage of the semiconductor device according to the first embodiment; 5 [0007]
FIG. 3 is a diagram illustrating a function and an effect of the semiconductor device according to the first embodiment; [0008]
FIG. 4 is a diagram illustrating a relation of a composition and a thickness of a barrier layer of an HEMT 10 and a two-dimensional electron gas density; [0009]
FIG. 5 is a schematic cross-sectional view illustrating a configuration of a semiconductor device according to a second embodiment; [0010]
FIG. 6 is a schematic cross-sectional view 15 illustrating a configuration of a semiconductor device according to a third embodiment; and [0011]
FIG. 7 is a schematic cross- sectional view illustrating a configuration of a semiconductor device according to a fourth embodiment.
FIG. 25 4, a horizontal axis shows the thickness of the barrier layer and a vertical axis shows the two-dimensional electron gas density of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The device according to claim 1, wherein a thickness of the first semiconductor layer is larger than a thickness of the second semiconductor
SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.8.353.1246.535.1290.svg 0.147 0.607 Chemistry Black and white Claim 3: The device according to claim 1, wherein the first GaN based semiconductor has a composition represented by SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.10.1293.1637.1374.1677.svg 0.133 0.27 Chemistry Black and white lnyiGa l SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.10.1539.1654.1639.1682.svg 0.093 0.333 Chemistry Black and white) N (0 < X₁ < 1, 0 < Y₁ < 1, and 0 < X₁ + Y₁ < 1), the second GaN based semiconductor has a composition represented by A lx 2 Iny 2 Ga l (X 2 + Y₂)N (0 SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.12.876.1859.1010.1896.svg 0.123 0.447 Chemistry Black and white 1, 0 < Y₂ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.12.1214.1859.1269.1895.svg 0.12 0.183 Chemistry Black and white, and 0 < X₂ + Y₂ <1), the third GaN based semiconductor has a composition represented by A l X₃ In y3 Ga l (x3 + y3) N (0 < X₃ < 1, 0 < Y₃ < 1, and 0 < X₃ + Y₃ < 1), the fourth GaN based semiconductor has a composition represented by SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.415.2191.646.2231.svg 0.133 0.77 Chemistry Black and white (x 4 + y4) N (0 < X₄ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.987.2190.1038.2226.svg 0.12 0.17 Chemistry Black and white, 0 < Y₄ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.2.15.1216.2188.1270.2225.svg 0.123 0.18 Chemistry Black and white, and 0 < X₄ + Y₄ <1), and the fifth GaN based semiconductor has a composition represented by A l X₅ InysGa l (xs+ys) N (0 < X₅ < 1, 0 < Y₅ < 1, and 0 < X₅ + Y₅ < 1).
The device according to claim 3, wherein X 1 + Y l, X₂ + Y2, X₃ + Y3, X₄ + Y4, and X₅ + Y₅ satisfy relations of X 1 + Y 1 > X₂ + Y2, X₃ + Y₃ > X₂ + Y2, and X₅ +Y5>X₄+Y4. 8 A pplication No. 14/870,198 Reply to Office Action of
The device according to claim 3, wherein X 1, X3, and X₅ satisfy a relation of X₅ > X₃ SVG 14870198.03-16-2016.ILVBCKZURXEAPX3.CLM.3.4.775.604.800.637.svg 0.11 0.083 Chemistry Black and white X1.
The device according to claim 3, wherein Y₃ and Y₅ satisfy a relation of Y₅ > Y3.
The device according to claim 1, wherein a thickness of the second semiconductor layer is 300 nm or less.
The device according to claim 1, wherein the fifth semiconductor layer is n-type semiconductor.
The device according to claim 1, wherein a thickness of the A lN layer is 1 nm to 10 nm.
A semiconductor device comprising: a first semiconductor layer of a first GaN based semiconductor; a second semiconductor layer of a second GaN based semiconductor provided above the first semiconductor layer, the second GaN based semiconductor having a band gap narrower than that of the first GaN based semiconductor; 9 Application No. 14/870,198 Reply to Office Action of a third semiconductor layer of a third GaN based semiconductor provided above the second semiconductor layer, the third GaN based semiconductor having a band gap wider than that of the second GaN based semiconductor; a fourth semiconductor layer of a fourth GaN based semiconductor provided above the third semiconductor layer, the fourth GaN based semiconductor having a band gap narrower than that of the third GaN based semiconductor; a fifth semiconductor layer of a fifth GaN based semiconductor provided above the fourth semiconductor layer, the fifth GaN based semiconductor having a band gap wider than that of the fourth GaN based semiconductor; an A l N layer provided between the third semiconductor layer and the fourth semiconductor layer; a gate dielectric provided directly on the A I N layer, the fourth semiconductor layer, and the fifth semiconductor layer; a gate electrode provided on the gate dielectric; a source electrode provided above the fifth semiconductor layer; and a drain electrode provided above the fifth semiconductor layer at the side opposite to the side of the gate source electrode with respect to the source gate electrode.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device (claims 1–9 structure)
Materials described outside the worked examples.
first GaN based semiconductor
second GaN based semiconductor
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a diagram illustrating a relation of a composition and a thickness of a barrier layer of an HEMT 10 and a two-dimensional electron gas density; [0009]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–300 nm | — |
Thickness | 5–30 nm |
Related documents with shared materials, methods, properties, or citations.
GaN-based semiconductor device with AlN interlayer (claim 10 structure)
Transistor 100 (first embodiment)
third GaN based semiconductor
fourth GaN based semiconductor
fifth GaN based semiconductor
AlN
gate dielectric
undoped AlGaN
AlGaN
buffer layer (AlxGa₁-xN or AlN)
silicon substrate
Si
FIG. 25 4, a horizontal axis shows the thickness of the barrier layer and a vertical axis shows the two-dimensional electron gas density of the …
| — |
Thickness | 3–50 nm | — |
Thickness | 3–30 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–10 nm | — |
Thickness | 5–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 5–8 nm | — |
Thickness | 0.5–2 nm | — |
Thickness | 3–200 nm | — |
Thickness | ≥ 1 nm | — |
GaN-based semiconductor device with AlN interlayer (claim 10 structure)
Transistor 100 (first embodiment)
third GaN based semiconductor
fourth GaN based semiconductor
fifth GaN based semiconductor
AlN
gate dielectric
undoped AlGaN
AlGaN
buffer layer (AlxGa₁-xN or AlN)
silicon substrate
Si
FIG. 25 4, a horizontal axis shows the thickness of the barrier layer and a vertical axis shows the two-dimensional electron gas density of the …
| — |
Thickness | 3–50 nm | — |
Thickness | 3–30 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–10 nm | — |
Thickness | 5–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 5–8 nm | — |
Thickness | 0.5–2 nm | — |
Thickness | 3–200 nm | — |
Thickness | ≥ 1 nm | — |
GaN-based semiconductor device with AlN interlayer (claim 10 structure)
Transistor 100 (first embodiment)
third GaN based semiconductor
fourth GaN based semiconductor
fifth GaN based semiconductor
AlN
gate dielectric
undoped AlGaN
AlGaN
buffer layer (AlxGa₁-xN or AlN)
silicon substrate
Si
FIG. 25 4, a horizontal axis shows the thickness of the barrier layer and a vertical axis shows the two-dimensional electron gas density of the …
| — |
Thickness | 3–50 nm | — |
Thickness | 3–30 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–10 nm | — |
Thickness | 5–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 5–8 nm | — |
Thickness | 0.5–2 nm | — |
Thickness | 3–200 nm | — |
Thickness | ≥ 1 nm | — |
GaN-based semiconductor device with AlN interlayer (claim 10 structure)
Transistor 100 (first embodiment)
third GaN based semiconductor
fourth GaN based semiconductor
fifth GaN based semiconductor
AlN
gate dielectric
undoped AlGaN
AlGaN
buffer layer (AlxGa₁-xN or AlN)
silicon substrate
Si
FIG. 25 4, a horizontal axis shows the thickness of the barrier layer and a vertical axis shows the two-dimensional electron gas density of the …
| — |
Thickness | 3–50 nm | — |
Thickness | 3–30 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–10 nm | — |
Thickness | 5–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 5–8 nm | — |
Thickness | 0.5–2 nm | — |
Thickness | 3–200 nm | — |
Thickness | ≥ 1 nm | — |