Patent
US 11,451,211GALLIUM NITRIDE STRUCTURE, PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT, AND RESONATOR USING PIEZOELECTRIC ELEMENT
Keiichi Umeda
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,451,211Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride structure, comprising: a substrate; a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; and a first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer in contact with the gallium nitride layer. Currently amended
The gallium nitride structure according to claim 1, further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween. Original
The gallium nitride structure according to claim 1, wherein the substrate comprises a degenerated n-type Si. Original
A resonator comprising: a vibration portion comprising the gallium nitride structure according to claim 1; a holding portion surrounding the vibration portion; and a holding arm connecting the vibration portion to the holding portion. Original
A [[The]] gallium nitride structure, comprising: a substrate; a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; and a first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing hafnium as a main component thereof the at least one hafnium layer in contact with the gallium nitride layer, wherein the at least one hafnium layer includes: a first hafnium layer that is in contact with the substrate; a second hafnium layer that is in contact with the gallium nitride layer; and a metal layer having a resistivity lower than hafnium between the first hafnium layer and the second hafnium layer. Currently amended
The gallium nitride structure according to claim 2, wherein the metal layer is an aluminum layer containing aluminum as a main component thereof. Original
The gallium nitride structure according to claim 2, further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween. Original
A [[The]] resonator, comprising: a vibration portion comprising the gallium nitride structure according to claim 2; a holding portion surrounding the vibration portion; and a holding arm connecting the vibration portion to the holding portion. Currently amended
(Withdrawn and Currently amended) A method of manufacturing a piezoelectric element, the method comprising: forming a first electrode including a hafnium layer containing a single metal of hafnium as a main component thereof on a substrate by sputtering; and forming a piezoelectric body layer containing gallium nitride as a main component thereof on the first electrode by sputtering. Currently amended
The method of manufacturing a piezoelectric element according to claim 13, wherein the piezoelectric body layer is formed at a temperature of 500 0 C. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, wherein the forming of the first electrode includes: forming a first hafnium layer on the substrate; forming a metal layer having a resistivity lower than hafnium on the first hafnium layer; and forming a second hafnium layer on the metal layer. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, further comprising forming a second electrode on the piezoelectric body layer. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, wherein the substrate comprises a degenerated n-type Si. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride structure with single hafnium electrode layer
gallium nitride structure with sandwich hafnium/metal/hafnium electrode
Materials described outside the worked examples.
gallium nitride
GaN
hafnium
Hf
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,451,211Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride structure, comprising: a substrate; a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; and a first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer in contact with the gallium nitride layer. Currently amended
The gallium nitride structure according to claim 1, further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween. Original
The gallium nitride structure according to claim 1, wherein the substrate comprises a degenerated n-type Si. Original
A resonator comprising: a vibration portion comprising the gallium nitride structure according to claim 1; a holding portion surrounding the vibration portion; and a holding arm connecting the vibration portion to the holding portion. Original
A [[The]] gallium nitride structure, comprising: a substrate; a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; and a first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing hafnium as a main component thereof the at least one hafnium layer in contact with the gallium nitride layer, wherein the at least one hafnium layer includes: a first hafnium layer that is in contact with the substrate; a second hafnium layer that is in contact with the gallium nitride layer; and a metal layer having a resistivity lower than hafnium between the first hafnium layer and the second hafnium layer. Currently amended
The gallium nitride structure according to claim 2, wherein the metal layer is an aluminum layer containing aluminum as a main component thereof. Original
The gallium nitride structure according to claim 2, further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween. Original
A [[The]] resonator, comprising: a vibration portion comprising the gallium nitride structure according to claim 2; a holding portion surrounding the vibration portion; and a holding arm connecting the vibration portion to the holding portion. Currently amended
(Withdrawn and Currently amended) A method of manufacturing a piezoelectric element, the method comprising: forming a first electrode including a hafnium layer containing a single metal of hafnium as a main component thereof on a substrate by sputtering; and forming a piezoelectric body layer containing gallium nitride as a main component thereof on the first electrode by sputtering. Currently amended
The method of manufacturing a piezoelectric element according to claim 13, wherein the piezoelectric body layer is formed at a temperature of 500 0 C. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, wherein the forming of the first electrode includes: forming a first hafnium layer on the substrate; forming a metal layer having a resistivity lower than hafnium on the first hafnium layer; and forming a second hafnium layer on the metal layer. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, further comprising forming a second electrode on the piezoelectric body layer. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, wherein the substrate comprises a degenerated n-type Si. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride structure with single hafnium electrode layer
gallium nitride structure with sandwich hafnium/metal/hafnium electrode
Materials described outside the worked examples.
gallium nitride
GaN
hafnium
Hf
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,451,211Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride structure, comprising: a substrate; a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; and a first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer in contact with the gallium nitride layer. Currently amended
The gallium nitride structure according to claim 1, further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween. Original
The gallium nitride structure according to claim 1, wherein the substrate comprises a degenerated n-type Si. Original
A resonator comprising: a vibration portion comprising the gallium nitride structure according to claim 1; a holding portion surrounding the vibration portion; and a holding arm connecting the vibration portion to the holding portion. Original
A [[The]] gallium nitride structure, comprising: a substrate; a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; and a first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing hafnium as a main component thereof the at least one hafnium layer in contact with the gallium nitride layer, wherein the at least one hafnium layer includes: a first hafnium layer that is in contact with the substrate; a second hafnium layer that is in contact with the gallium nitride layer; and a metal layer having a resistivity lower than hafnium between the first hafnium layer and the second hafnium layer. Currently amended
The gallium nitride structure according to claim 2, wherein the metal layer is an aluminum layer containing aluminum as a main component thereof. Original
The gallium nitride structure according to claim 2, further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween. Original
A [[The]] resonator, comprising: a vibration portion comprising the gallium nitride structure according to claim 2; a holding portion surrounding the vibration portion; and a holding arm connecting the vibration portion to the holding portion. Currently amended
(Withdrawn and Currently amended) A method of manufacturing a piezoelectric element, the method comprising: forming a first electrode including a hafnium layer containing a single metal of hafnium as a main component thereof on a substrate by sputtering; and forming a piezoelectric body layer containing gallium nitride as a main component thereof on the first electrode by sputtering. Currently amended
The method of manufacturing a piezoelectric element according to claim 13, wherein the piezoelectric body layer is formed at a temperature of 500 0 C. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, wherein the forming of the first electrode includes: forming a first hafnium layer on the substrate; forming a metal layer having a resistivity lower than hafnium on the first hafnium layer; and forming a second hafnium layer on the metal layer. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, further comprising forming a second electrode on the piezoelectric body layer. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, wherein the substrate comprises a degenerated n-type Si. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride structure with single hafnium electrode layer
gallium nitride structure with sandwich hafnium/metal/hafnium electrode
Materials described outside the worked examples.
gallium nitride
GaN
hafnium
Hf
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,451,211Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride structure, comprising: a substrate; a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; and a first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer in contact with the gallium nitride layer. Currently amended
The gallium nitride structure according to claim 1, further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween. Original
The gallium nitride structure according to claim 1, wherein the substrate comprises a degenerated n-type Si. Original
A resonator comprising: a vibration portion comprising the gallium nitride structure according to claim 1; a holding portion surrounding the vibration portion; and a holding arm connecting the vibration portion to the holding portion. Original
A [[The]] gallium nitride structure, comprising: a substrate; a gallium nitride layer provided so as to be opposed to the substrate and containing gallium nitride as a main component; and a first electrode that is provided between the gallium nitride layer and the substrate, the first electrode including at least one hafnium layer containing hafnium as a main component thereof the at least one hafnium layer in contact with the gallium nitride layer, wherein the at least one hafnium layer includes: a first hafnium layer that is in contact with the substrate; a second hafnium layer that is in contact with the gallium nitride layer; and a metal layer having a resistivity lower than hafnium between the first hafnium layer and the second hafnium layer. Currently amended
The gallium nitride structure according to claim 2, wherein the metal layer is an aluminum layer containing aluminum as a main component thereof. Original
The gallium nitride structure according to claim 2, further comprising a second electrode opposed to the first electrode with the gallium nitride layer therebetween. Original
A [[The]] resonator, comprising: a vibration portion comprising the gallium nitride structure according to claim 2; a holding portion surrounding the vibration portion; and a holding arm connecting the vibration portion to the holding portion. Currently amended
(Withdrawn and Currently amended) A method of manufacturing a piezoelectric element, the method comprising: forming a first electrode including a hafnium layer containing a single metal of hafnium as a main component thereof on a substrate by sputtering; and forming a piezoelectric body layer containing gallium nitride as a main component thereof on the first electrode by sputtering. Currently amended
The method of manufacturing a piezoelectric element according to claim 13, wherein the piezoelectric body layer is formed at a temperature of 500 0 C. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, wherein the forming of the first electrode includes: forming a first hafnium layer on the substrate; forming a metal layer having a resistivity lower than hafnium on the first hafnium layer; and forming a second hafnium layer on the metal layer. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, further comprising forming a second electrode on the piezoelectric body layer. Withdrawn
The method of manufacturing a piezoelectric element according to claim 13, wherein the substrate comprises a degenerated n-type Si. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride structure with single hafnium electrode layer
gallium nitride structure with sandwich hafnium/metal/hafnium electrode
Materials described outside the worked examples.
gallium nitride
GaN
hafnium
Hf
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
resonator with gallium nitride structure (claim 1 basis)
No layer stack recorded.
resonator with gallium nitride structure (claim 2 basis)
No layer stack recorded.
piezoelectric element formed by sputtering
metal layer with resistivity lower than hafnium
aluminum
Al
degenerated n-type Si
resonator with gallium nitride structure (claim 1 basis)
No layer stack recorded.
resonator with gallium nitride structure (claim 2 basis)
No layer stack recorded.
piezoelectric element formed by sputtering
metal layer with resistivity lower than hafnium
aluminum
Al
degenerated n-type Si
resonator with gallium nitride structure (claim 1 basis)
No layer stack recorded.
resonator with gallium nitride structure (claim 2 basis)
No layer stack recorded.
piezoelectric element formed by sputtering
metal layer with resistivity lower than hafnium
aluminum
Al
degenerated n-type Si
resonator with gallium nitride structure (claim 1 basis)
No layer stack recorded.
resonator with gallium nitride structure (claim 2 basis)
No layer stack recorded.
piezoelectric element formed by sputtering
metal layer with resistivity lower than hafnium
aluminum
Al
degenerated n-type Si