Patent
US 11,082,039GaN TRANSISTOR WITH INTEGRATED DRAIN VOLTAGE SENSE FOR FAST OVERCURRENT AND SHORT CIRCUIT PROTECTION
Di CHEN
US
Copyright © 2026 Matter42. All rights reserved.
Patent details
Patent
US 11,082,039Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN power switching device comprising: a uci substrate; a GaN power transistor switch SW MAI N and an integrated drain voltage sensing circuit formed monolithically on the substrate; the power transistor switch SW MAI N having a gate width and on-resistance, and comprising gate, source and drain terminals, a source sense terminal, and the integrated drain voltage sensing circuit having a drain voltage sense terminal; the integrated drain voltage sensing circuit comprising a sense transistor switch SWSEN and a sense resistor R SEN -(, c o nfigured to form a resistive divider, erein the _ SEN compn,:v g and on-resistance Ron, and the sense resistor comp ri ses a transistor the drain of the sense transistor switch SWSEN being connected to the drain of the power transistor switch SW MAI N, the source of the sense transistor switch SWSEN being connected through the resistor R S EN to an intrinsic source of the power transistor switch SWMAIN, and the gate of the sense transistor switch SWSEN being connected to the gate terminal of the power transistor switch SWMAIN; and a node between the source of the sense transistor switch SWSEN and the sense resistor R S EN being c o nnected to the drain voltage sense terminal wherein, when a gate drive signal is applied to the gate terminal to turn-on the power transistor switch SWMAIN and the sense transistor switch SWSEN, a drain voltage sense signal VD S EN is pr o vided to the drain voltage sense terminal Currently amended
The GaN power switching device of claim 1, wherein the power transistor switch SWMAIN comprises a large gate width, high voltage/high current lateral power transistor, sense transistor switch SWSEN and the sense resistor R S EN are lateral, wherein the gate width ratio wg/Wg is in the range from about 1:100 to 1:1000. Currently amended
A driver circuit for a GaN power switching device comprising a power transistor switch SWMA I N and an integrated drain voltage sensing circuit as defined in claim 1, the driver circuit comprising: gate driver circuitry for generating a gate drive signal, having a gate drive input terminal and a gate drive output terminal; fault detection logic circuitry having a terminal for receiving a drain voltage sense signal VD S EN fr o m the GaN switching device, and logic elements for comparing the drain voltage sense signal VD S EN to a reference v o ltage Vref and generating a fault signal FLT of a predetermined level when V D S EN reaches or exceeds Vref; the fault signal FLT being input to the gate driver circuitry to turn-off the power transistor switch SWMA I N when the fault signal FLT reaches the predetermined level for overcurrent protection. Currently amended
The GaN power switching device of claim 1, wherein the GaN power transistor switch SWMAIN comprises a large gate width, high voltage/high current power transistor, wherein the gate width ratio wg/Wg is in the range from about 1: 100 to 1: 1000. Currently amended
The GaN power switching device of claim 1, wherein the power transistor switch SWMAIN, the sense transistor switch SWSEN, and the sense resistor R S EN are lateral Currently amended
The GaN power switching device of claim 1, wherein the gate width wg of the sense transistor switch SWMAIN and the gate width wg of the sense resistor R S EN o f the resistive divider are selected to provide said on-resistances Ron in a range from 20 Q to 60 Q, to provide fast sensing of a drain-source voltage V DS o f the power transistor switch, to provide the drain voltage sense signal VD S EN within less than 100 ns. New
A GaN power switching module comprising: a GaN power switching device comprising: a aumw. substrate; a GaN power transistor switch SWMAIN and an integrated drain voltage sensing circuit formed monolithically on the substrate; the power transistor switch SW MAI N having a gate width _ and on-resistance and comprising gate, source and drain a source sense terminal, and the integrated drain voltage sensing circuit having a drain voltage sense terminal; the integrated drain voltage sensing circuit comprising a sense transistor switch SWSEN and a sense resistor configured as a resistive divider, te sense transis t. n and w si stance Ron, and the sense resistor R S EN c ompris ing a transistor the drain of the sense transistor switch SWSEN being connected to the drain of the power transistor switch SWMAIN, the source of the sense transistor switch SWSEN being connected through the resistor R S EN to an intrinsic source of the power transistor switch SW MAI N, and the gate of the sense transistor switch SWSEN being connected to the gate of the power transistor switch SWMA IN; and a node between the source of the sense transistor switch SWSEN and the sense resistor R S EN IiN being c o nnected to the drain voltage sense output terminal; a driver circuit comprising: gate driver circuitry for generating a gate drive signal, having a gate drive input terminal and a gate drive output terminal; fault detection logic circuitry having a terminal for receiving a drain voltage sense signal V D S E N fr o m the drain voltage sense terminal of the GaN power switching device, and logic circuitry for comparing the drain voltage sense signal VD S EN to a reference v o ltage Vref and generating a fault signal FLT of a predetermined level when V D S EN exceeds Vref; and the fault signal FLT being input to the gate driver circuitry to turn-off of the gate of the power switch SWMA IN when the fault signal FLT reaches the predetermined level for overcurrent protection. Currently amended
The GaN power switching module of claim 10, wherein the driver circuit comprises a MOSFET driver circuit which is co-packaged with the GaN power switching device. Previously presented
The GaN power switching module of claim 10, configured to implement turn-off comprising first and second stage turn-off, wherein the driver circuit comprises fast soft turn-off circuitry connected.m U the gate output terminal of the driver circuit, the fast soft turn-off circuitry configured to receive the fault signal FLT from the fault detection logic circuitry and provide the first stage turn-off comprising fast soft turn-off of the power switch SWMAIN when the fault signal FLT reaches the predetermined level for overcurrent protection, and then implement the second stage turn-off comprising full turn-off of the GaN power transistor switch SW MAI N by the gate driver circuitry. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switching device with integrated drain voltage sensing circuit
Driver circuit for GaN power switching device
Materials described outside the worked examples.
GaN (Gallium Nitride)
GaN
Silicon (MOSFET driver)
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-resistance Ron range (sense circuit) | 20–60 Ohm | GaN |
Voltage | 2–6 V |
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 11,082,039Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN power switching device comprising: a uci substrate; a GaN power transistor switch SW MAI N and an integrated drain voltage sensing circuit formed monolithically on the substrate; the power transistor switch SW MAI N having a gate width and on-resistance, and comprising gate, source and drain terminals, a source sense terminal, and the integrated drain voltage sensing circuit having a drain voltage sense terminal; the integrated drain voltage sensing circuit comprising a sense transistor switch SWSEN and a sense resistor R SEN -(, c o nfigured to form a resistive divider, erein the _ SEN compn,:v g and on-resistance Ron, and the sense resistor comp ri ses a transistor the drain of the sense transistor switch SWSEN being connected to the drain of the power transistor switch SW MAI N, the source of the sense transistor switch SWSEN being connected through the resistor R S EN to an intrinsic source of the power transistor switch SWMAIN, and the gate of the sense transistor switch SWSEN being connected to the gate terminal of the power transistor switch SWMAIN; and a node between the source of the sense transistor switch SWSEN and the sense resistor R S EN being c o nnected to the drain voltage sense terminal wherein, when a gate drive signal is applied to the gate terminal to turn-on the power transistor switch SWMAIN and the sense transistor switch SWSEN, a drain voltage sense signal VD S EN is pr o vided to the drain voltage sense terminal Currently amended
The GaN power switching device of claim 1, wherein the power transistor switch SWMAIN comprises a large gate width, high voltage/high current lateral power transistor, sense transistor switch SWSEN and the sense resistor R S EN are lateral, wherein the gate width ratio wg/Wg is in the range from about 1:100 to 1:1000. Currently amended
A driver circuit for a GaN power switching device comprising a power transistor switch SWMA I N and an integrated drain voltage sensing circuit as defined in claim 1, the driver circuit comprising: gate driver circuitry for generating a gate drive signal, having a gate drive input terminal and a gate drive output terminal; fault detection logic circuitry having a terminal for receiving a drain voltage sense signal VD S EN fr o m the GaN switching device, and logic elements for comparing the drain voltage sense signal VD S EN to a reference v o ltage Vref and generating a fault signal FLT of a predetermined level when V D S EN reaches or exceeds Vref; the fault signal FLT being input to the gate driver circuitry to turn-off the power transistor switch SWMA I N when the fault signal FLT reaches the predetermined level for overcurrent protection. Currently amended
The GaN power switching device of claim 1, wherein the GaN power transistor switch SWMAIN comprises a large gate width, high voltage/high current power transistor, wherein the gate width ratio wg/Wg is in the range from about 1: 100 to 1: 1000. Currently amended
The GaN power switching device of claim 1, wherein the power transistor switch SWMAIN, the sense transistor switch SWSEN, and the sense resistor R S EN are lateral Currently amended
The GaN power switching device of claim 1, wherein the gate width wg of the sense transistor switch SWMAIN and the gate width wg of the sense resistor R S EN o f the resistive divider are selected to provide said on-resistances Ron in a range from 20 Q to 60 Q, to provide fast sensing of a drain-source voltage V DS o f the power transistor switch, to provide the drain voltage sense signal VD S EN within less than 100 ns. New
A GaN power switching module comprising: a GaN power switching device comprising: a aumw. substrate; a GaN power transistor switch SWMAIN and an integrated drain voltage sensing circuit formed monolithically on the substrate; the power transistor switch SW MAI N having a gate width _ and on-resistance and comprising gate, source and drain a source sense terminal, and the integrated drain voltage sensing circuit having a drain voltage sense terminal; the integrated drain voltage sensing circuit comprising a sense transistor switch SWSEN and a sense resistor configured as a resistive divider, te sense transis t. n and w si stance Ron, and the sense resistor R S EN c ompris ing a transistor the drain of the sense transistor switch SWSEN being connected to the drain of the power transistor switch SWMAIN, the source of the sense transistor switch SWSEN being connected through the resistor R S EN to an intrinsic source of the power transistor switch SW MAI N, and the gate of the sense transistor switch SWSEN being connected to the gate of the power transistor switch SWMA IN; and a node between the source of the sense transistor switch SWSEN and the sense resistor R S EN IiN being c o nnected to the drain voltage sense output terminal; a driver circuit comprising: gate driver circuitry for generating a gate drive signal, having a gate drive input terminal and a gate drive output terminal; fault detection logic circuitry having a terminal for receiving a drain voltage sense signal V D S E N fr o m the drain voltage sense terminal of the GaN power switching device, and logic circuitry for comparing the drain voltage sense signal VD S EN to a reference v o ltage Vref and generating a fault signal FLT of a predetermined level when V D S EN exceeds Vref; and the fault signal FLT being input to the gate driver circuitry to turn-off of the gate of the power switch SWMA IN when the fault signal FLT reaches the predetermined level for overcurrent protection. Currently amended
The GaN power switching module of claim 10, wherein the driver circuit comprises a MOSFET driver circuit which is co-packaged with the GaN power switching device. Previously presented
The GaN power switching module of claim 10, configured to implement turn-off comprising first and second stage turn-off, wherein the driver circuit comprises fast soft turn-off circuitry connected.m U the gate output terminal of the driver circuit, the fast soft turn-off circuitry configured to receive the fault signal FLT from the fault detection logic circuitry and provide the first stage turn-off comprising fast soft turn-off of the power switch SWMAIN when the fault signal FLT reaches the predetermined level for overcurrent protection, and then implement the second stage turn-off comprising full turn-off of the GaN power transistor switch SW MAI N by the gate driver circuitry. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switching device with integrated drain voltage sensing circuit
Driver circuit for GaN power switching device
Materials described outside the worked examples.
GaN (Gallium Nitride)
GaN
Silicon (MOSFET driver)
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-resistance Ron range (sense circuit) | 20–60 Ohm | GaN |
Voltage | 2–6 V |
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 11,082,039Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN power switching device comprising: a uci substrate; a GaN power transistor switch SW MAI N and an integrated drain voltage sensing circuit formed monolithically on the substrate; the power transistor switch SW MAI N having a gate width and on-resistance, and comprising gate, source and drain terminals, a source sense terminal, and the integrated drain voltage sensing circuit having a drain voltage sense terminal; the integrated drain voltage sensing circuit comprising a sense transistor switch SWSEN and a sense resistor R SEN -(, c o nfigured to form a resistive divider, erein the _ SEN compn,:v g and on-resistance Ron, and the sense resistor comp ri ses a transistor the drain of the sense transistor switch SWSEN being connected to the drain of the power transistor switch SW MAI N, the source of the sense transistor switch SWSEN being connected through the resistor R S EN to an intrinsic source of the power transistor switch SWMAIN, and the gate of the sense transistor switch SWSEN being connected to the gate terminal of the power transistor switch SWMAIN; and a node between the source of the sense transistor switch SWSEN and the sense resistor R S EN being c o nnected to the drain voltage sense terminal wherein, when a gate drive signal is applied to the gate terminal to turn-on the power transistor switch SWMAIN and the sense transistor switch SWSEN, a drain voltage sense signal VD S EN is pr o vided to the drain voltage sense terminal Currently amended
The GaN power switching device of claim 1, wherein the power transistor switch SWMAIN comprises a large gate width, high voltage/high current lateral power transistor, sense transistor switch SWSEN and the sense resistor R S EN are lateral, wherein the gate width ratio wg/Wg is in the range from about 1:100 to 1:1000. Currently amended
A driver circuit for a GaN power switching device comprising a power transistor switch SWMA I N and an integrated drain voltage sensing circuit as defined in claim 1, the driver circuit comprising: gate driver circuitry for generating a gate drive signal, having a gate drive input terminal and a gate drive output terminal; fault detection logic circuitry having a terminal for receiving a drain voltage sense signal VD S EN fr o m the GaN switching device, and logic elements for comparing the drain voltage sense signal VD S EN to a reference v o ltage Vref and generating a fault signal FLT of a predetermined level when V D S EN reaches or exceeds Vref; the fault signal FLT being input to the gate driver circuitry to turn-off the power transistor switch SWMA I N when the fault signal FLT reaches the predetermined level for overcurrent protection. Currently amended
The GaN power switching device of claim 1, wherein the GaN power transistor switch SWMAIN comprises a large gate width, high voltage/high current power transistor, wherein the gate width ratio wg/Wg is in the range from about 1: 100 to 1: 1000. Currently amended
The GaN power switching device of claim 1, wherein the power transistor switch SWMAIN, the sense transistor switch SWSEN, and the sense resistor R S EN are lateral Currently amended
The GaN power switching device of claim 1, wherein the gate width wg of the sense transistor switch SWMAIN and the gate width wg of the sense resistor R S EN o f the resistive divider are selected to provide said on-resistances Ron in a range from 20 Q to 60 Q, to provide fast sensing of a drain-source voltage V DS o f the power transistor switch, to provide the drain voltage sense signal VD S EN within less than 100 ns. New
A GaN power switching module comprising: a GaN power switching device comprising: a aumw. substrate; a GaN power transistor switch SWMAIN and an integrated drain voltage sensing circuit formed monolithically on the substrate; the power transistor switch SW MAI N having a gate width _ and on-resistance and comprising gate, source and drain a source sense terminal, and the integrated drain voltage sensing circuit having a drain voltage sense terminal; the integrated drain voltage sensing circuit comprising a sense transistor switch SWSEN and a sense resistor configured as a resistive divider, te sense transis t. n and w si stance Ron, and the sense resistor R S EN c ompris ing a transistor the drain of the sense transistor switch SWSEN being connected to the drain of the power transistor switch SWMAIN, the source of the sense transistor switch SWSEN being connected through the resistor R S EN to an intrinsic source of the power transistor switch SW MAI N, and the gate of the sense transistor switch SWSEN being connected to the gate of the power transistor switch SWMA IN; and a node between the source of the sense transistor switch SWSEN and the sense resistor R S EN IiN being c o nnected to the drain voltage sense output terminal; a driver circuit comprising: gate driver circuitry for generating a gate drive signal, having a gate drive input terminal and a gate drive output terminal; fault detection logic circuitry having a terminal for receiving a drain voltage sense signal V D S E N fr o m the drain voltage sense terminal of the GaN power switching device, and logic circuitry for comparing the drain voltage sense signal VD S EN to a reference v o ltage Vref and generating a fault signal FLT of a predetermined level when V D S EN exceeds Vref; and the fault signal FLT being input to the gate driver circuitry to turn-off of the gate of the power switch SWMA IN when the fault signal FLT reaches the predetermined level for overcurrent protection. Currently amended
The GaN power switching module of claim 10, wherein the driver circuit comprises a MOSFET driver circuit which is co-packaged with the GaN power switching device. Previously presented
The GaN power switching module of claim 10, configured to implement turn-off comprising first and second stage turn-off, wherein the driver circuit comprises fast soft turn-off circuitry connected.m U the gate output terminal of the driver circuit, the fast soft turn-off circuitry configured to receive the fault signal FLT from the fault detection logic circuitry and provide the first stage turn-off comprising fast soft turn-off of the power switch SWMAIN when the fault signal FLT reaches the predetermined level for overcurrent protection, and then implement the second stage turn-off comprising full turn-off of the GaN power transistor switch SW MAI N by the gate driver circuitry. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switching device with integrated drain voltage sensing circuit
Driver circuit for GaN power switching device
Materials described outside the worked examples.
GaN (Gallium Nitride)
GaN
Silicon (MOSFET driver)
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-resistance Ron range (sense circuit) | 20–60 Ohm | GaN |
Voltage | 2–6 V |
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 11,082,039Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN power switching device comprising: a uci substrate; a GaN power transistor switch SW MAI N and an integrated drain voltage sensing circuit formed monolithically on the substrate; the power transistor switch SW MAI N having a gate width and on-resistance, and comprising gate, source and drain terminals, a source sense terminal, and the integrated drain voltage sensing circuit having a drain voltage sense terminal; the integrated drain voltage sensing circuit comprising a sense transistor switch SWSEN and a sense resistor R SEN -(, c o nfigured to form a resistive divider, erein the _ SEN compn,:v g and on-resistance Ron, and the sense resistor comp ri ses a transistor the drain of the sense transistor switch SWSEN being connected to the drain of the power transistor switch SW MAI N, the source of the sense transistor switch SWSEN being connected through the resistor R S EN to an intrinsic source of the power transistor switch SWMAIN, and the gate of the sense transistor switch SWSEN being connected to the gate terminal of the power transistor switch SWMAIN; and a node between the source of the sense transistor switch SWSEN and the sense resistor R S EN being c o nnected to the drain voltage sense terminal wherein, when a gate drive signal is applied to the gate terminal to turn-on the power transistor switch SWMAIN and the sense transistor switch SWSEN, a drain voltage sense signal VD S EN is pr o vided to the drain voltage sense terminal Currently amended
The GaN power switching device of claim 1, wherein the power transistor switch SWMAIN comprises a large gate width, high voltage/high current lateral power transistor, sense transistor switch SWSEN and the sense resistor R S EN are lateral, wherein the gate width ratio wg/Wg is in the range from about 1:100 to 1:1000. Currently amended
A driver circuit for a GaN power switching device comprising a power transistor switch SWMA I N and an integrated drain voltage sensing circuit as defined in claim 1, the driver circuit comprising: gate driver circuitry for generating a gate drive signal, having a gate drive input terminal and a gate drive output terminal; fault detection logic circuitry having a terminal for receiving a drain voltage sense signal VD S EN fr o m the GaN switching device, and logic elements for comparing the drain voltage sense signal VD S EN to a reference v o ltage Vref and generating a fault signal FLT of a predetermined level when V D S EN reaches or exceeds Vref; the fault signal FLT being input to the gate driver circuitry to turn-off the power transistor switch SWMA I N when the fault signal FLT reaches the predetermined level for overcurrent protection. Currently amended
The GaN power switching device of claim 1, wherein the GaN power transistor switch SWMAIN comprises a large gate width, high voltage/high current power transistor, wherein the gate width ratio wg/Wg is in the range from about 1: 100 to 1: 1000. Currently amended
The GaN power switching device of claim 1, wherein the power transistor switch SWMAIN, the sense transistor switch SWSEN, and the sense resistor R S EN are lateral Currently amended
The GaN power switching device of claim 1, wherein the gate width wg of the sense transistor switch SWMAIN and the gate width wg of the sense resistor R S EN o f the resistive divider are selected to provide said on-resistances Ron in a range from 20 Q to 60 Q, to provide fast sensing of a drain-source voltage V DS o f the power transistor switch, to provide the drain voltage sense signal VD S EN within less than 100 ns. New
A GaN power switching module comprising: a GaN power switching device comprising: a aumw. substrate; a GaN power transistor switch SWMAIN and an integrated drain voltage sensing circuit formed monolithically on the substrate; the power transistor switch SW MAI N having a gate width _ and on-resistance and comprising gate, source and drain a source sense terminal, and the integrated drain voltage sensing circuit having a drain voltage sense terminal; the integrated drain voltage sensing circuit comprising a sense transistor switch SWSEN and a sense resistor configured as a resistive divider, te sense transis t. n and w si stance Ron, and the sense resistor R S EN c ompris ing a transistor the drain of the sense transistor switch SWSEN being connected to the drain of the power transistor switch SWMAIN, the source of the sense transistor switch SWSEN being connected through the resistor R S EN to an intrinsic source of the power transistor switch SW MAI N, and the gate of the sense transistor switch SWSEN being connected to the gate of the power transistor switch SWMA IN; and a node between the source of the sense transistor switch SWSEN and the sense resistor R S EN IiN being c o nnected to the drain voltage sense output terminal; a driver circuit comprising: gate driver circuitry for generating a gate drive signal, having a gate drive input terminal and a gate drive output terminal; fault detection logic circuitry having a terminal for receiving a drain voltage sense signal V D S E N fr o m the drain voltage sense terminal of the GaN power switching device, and logic circuitry for comparing the drain voltage sense signal VD S EN to a reference v o ltage Vref and generating a fault signal FLT of a predetermined level when V D S EN exceeds Vref; and the fault signal FLT being input to the gate driver circuitry to turn-off of the gate of the power switch SWMA IN when the fault signal FLT reaches the predetermined level for overcurrent protection. Currently amended
The GaN power switching module of claim 10, wherein the driver circuit comprises a MOSFET driver circuit which is co-packaged with the GaN power switching device. Previously presented
The GaN power switching module of claim 10, configured to implement turn-off comprising first and second stage turn-off, wherein the driver circuit comprises fast soft turn-off circuitry connected.m U the gate output terminal of the driver circuit, the fast soft turn-off circuitry configured to receive the fault signal FLT from the fault detection logic circuitry and provide the first stage turn-off comprising fast soft turn-off of the power switch SWMAIN when the fault signal FLT reaches the predetermined level for overcurrent protection, and then implement the second stage turn-off comprising full turn-off of the GaN power transistor switch SW MAI N by the gate driver circuitry. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switching device with integrated drain voltage sensing circuit
Driver circuit for GaN power switching device
Materials described outside the worked examples.
GaN (Gallium Nitride)
GaN
Silicon (MOSFET driver)
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-resistance Ron range (sense circuit) | 20–60 Ohm | GaN |
Voltage | 2–6 V |
Related documents with shared materials, methods, properties, or citations.
GaN power switching module
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GaN power switching module
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GaN power switching module
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GaN power switching module
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