Patent
US 12,640,730 B2CIRCUITS AND METHODS FOR GATE OVERDRIVE IN GaN POWER STAGES
Nabil Akel, Jason Zhang, Victor Sinow, Thomas Ribarich
Navitas Semiconductor Limited, Dublin (IE)·May 26, 2026·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 12,640,730 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a variable voltage driver circuit, accord- ing to certain embodiments;
FIG. 2B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 3B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 4B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 5 illustrates timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 6 is a simplified flowchart illustrating a method of 5 overdriving a gate of GaN power switch according to embodiments of the disclosure; and
FIG. 7 illustrates a variable voltage driver circuit, accord- ing to certain embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; and a driver circuit having an output terminal coupled to the gate terminal, wherein the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is set to a first voltage when a voltage at the drain terminal is below a predetermined volt-age; the output voltage is set to a second voltage when the voltage at the drain terminal is above the predeter-mined voltage; and wherein the second voltage is greater than the first voltage.
The circuit of claim 1, wherein the driver circuit is further arranged to generate the output voltage at the output terminal such that the output voltage is at the second voltage a for a predetermined time.
The circuit of claim 1, wherein the driver circuit comprises a first detector circuit arranged to detect a voltage at the drain terminal.
A circuit comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; a driver circuit having an output terminal coupled to the gate terminal, wherein the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predeter-mined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time; and wherein the second voltage is greater than the first voltage.
The circuit of claim 8, wherein the predetermined time is fixed.
The circuit of claim 8, wherein the driver circuit comprises a first detector circuit arranged to detect a voltage at the drain terminal.
A system comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; a driver circuit coupled to the gate terminal and arranged to generate an output voltage at the gate terminal to control a conductivity state of the GaN switch; a first detector device coupled to the GaN switch and arranged to detect a drain terminal current and generate 15 a first signal such that when the drain terminal current is less than a first predetermined current the first signal has a low state and when the drain terminal current is greater than the first predetermined current the first signal has a high state; and wherein the output voltage is set to a first voltage when the first signal has a low state and is set to a second voltage when the first signal has a high state.
The system of claim 15, further comprising a con-troller arranged to receive the first signal and in response transmit a second signal to the driver circuit.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switch circuit with variable drive driver
GaN power switch system with drain current detection and gate overdrive control
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Gate overdrive voltage example range (normal to overdrive) | — | GaN |
Overdrive pulse predetermined time (claimed value) | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,640,730 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a variable voltage driver circuit, accord- ing to certain embodiments;
FIG. 2B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 3B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 4B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 5 illustrates timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 6 is a simplified flowchart illustrating a method of 5 overdriving a gate of GaN power switch according to embodiments of the disclosure; and
FIG. 7 illustrates a variable voltage driver circuit, accord- ing to certain embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; and a driver circuit having an output terminal coupled to the gate terminal, wherein the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is set to a first voltage when a voltage at the drain terminal is below a predetermined volt-age; the output voltage is set to a second voltage when the voltage at the drain terminal is above the predeter-mined voltage; and wherein the second voltage is greater than the first voltage.
The circuit of claim 1, wherein the driver circuit is further arranged to generate the output voltage at the output terminal such that the output voltage is at the second voltage a for a predetermined time.
The circuit of claim 1, wherein the driver circuit comprises a first detector circuit arranged to detect a voltage at the drain terminal.
A circuit comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; a driver circuit having an output terminal coupled to the gate terminal, wherein the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predeter-mined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time; and wherein the second voltage is greater than the first voltage.
The circuit of claim 8, wherein the predetermined time is fixed.
The circuit of claim 8, wherein the driver circuit comprises a first detector circuit arranged to detect a voltage at the drain terminal.
A system comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; a driver circuit coupled to the gate terminal and arranged to generate an output voltage at the gate terminal to control a conductivity state of the GaN switch; a first detector device coupled to the GaN switch and arranged to detect a drain terminal current and generate 15 a first signal such that when the drain terminal current is less than a first predetermined current the first signal has a low state and when the drain terminal current is greater than the first predetermined current the first signal has a high state; and wherein the output voltage is set to a first voltage when the first signal has a low state and is set to a second voltage when the first signal has a high state.
The system of claim 15, further comprising a con-troller arranged to receive the first signal and in response transmit a second signal to the driver circuit.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switch circuit with variable drive driver
GaN power switch system with drain current detection and gate overdrive control
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Gate overdrive voltage example range (normal to overdrive) | — | GaN |
Overdrive pulse predetermined time (claimed value) | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,640,730 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a variable voltage driver circuit, accord- ing to certain embodiments;
FIG. 2B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 3B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 4B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 5 illustrates timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 6 is a simplified flowchart illustrating a method of 5 overdriving a gate of GaN power switch according to embodiments of the disclosure; and
FIG. 7 illustrates a variable voltage driver circuit, accord- ing to certain embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; and a driver circuit having an output terminal coupled to the gate terminal, wherein the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is set to a first voltage when a voltage at the drain terminal is below a predetermined volt-age; the output voltage is set to a second voltage when the voltage at the drain terminal is above the predeter-mined voltage; and wherein the second voltage is greater than the first voltage.
The circuit of claim 1, wherein the driver circuit is further arranged to generate the output voltage at the output terminal such that the output voltage is at the second voltage a for a predetermined time.
The circuit of claim 1, wherein the driver circuit comprises a first detector circuit arranged to detect a voltage at the drain terminal.
A circuit comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; a driver circuit having an output terminal coupled to the gate terminal, wherein the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predeter-mined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time; and wherein the second voltage is greater than the first voltage.
The circuit of claim 8, wherein the predetermined time is fixed.
The circuit of claim 8, wherein the driver circuit comprises a first detector circuit arranged to detect a voltage at the drain terminal.
A system comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; a driver circuit coupled to the gate terminal and arranged to generate an output voltage at the gate terminal to control a conductivity state of the GaN switch; a first detector device coupled to the GaN switch and arranged to detect a drain terminal current and generate 15 a first signal such that when the drain terminal current is less than a first predetermined current the first signal has a low state and when the drain terminal current is greater than the first predetermined current the first signal has a high state; and wherein the output voltage is set to a first voltage when the first signal has a low state and is set to a second voltage when the first signal has a high state.
The system of claim 15, further comprising a con-troller arranged to receive the first signal and in response transmit a second signal to the driver circuit.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switch circuit with variable drive driver
GaN power switch system with drain current detection and gate overdrive control
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Gate overdrive voltage example range (normal to overdrive) | — | GaN |
Overdrive pulse predetermined time (claimed value) | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,640,730 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a variable voltage driver circuit, accord- ing to certain embodiments;
FIG. 2B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 3B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 4B illustrate timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 5 illustrates timing diagrams showing drive voltage of the variable voltage driver circuit of
FIG. 6 is a simplified flowchart illustrating a method of 5 overdriving a gate of GaN power switch according to embodiments of the disclosure; and
FIG. 7 illustrates a variable voltage driver circuit, accord- ing to certain embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; and a driver circuit having an output terminal coupled to the gate terminal, wherein the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is set to a first voltage when a voltage at the drain terminal is below a predetermined volt-age; the output voltage is set to a second voltage when the voltage at the drain terminal is above the predeter-mined voltage; and wherein the second voltage is greater than the first voltage.
The circuit of claim 1, wherein the driver circuit is further arranged to generate the output voltage at the output terminal such that the output voltage is at the second voltage a for a predetermined time.
The circuit of claim 1, wherein the driver circuit comprises a first detector circuit arranged to detect a voltage at the drain terminal.
A circuit comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; a driver circuit having an output terminal coupled to the gate terminal, wherein the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predeter-mined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time; and wherein the second voltage is greater than the first voltage.
The circuit of claim 8, wherein the predetermined time is fixed.
The circuit of claim 8, wherein the driver circuit comprises a first detector circuit arranged to detect a voltage at the drain terminal.
A system comprising: a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal; a driver circuit coupled to the gate terminal and arranged to generate an output voltage at the gate terminal to control a conductivity state of the GaN switch; a first detector device coupled to the GaN switch and arranged to detect a drain terminal current and generate 15 a first signal such that when the drain terminal current is less than a first predetermined current the first signal has a low state and when the drain terminal current is greater than the first predetermined current the first signal has a high state; and wherein the output voltage is set to a first voltage when the first signal has a low state and is set to a second voltage when the first signal has a high state.
The system of claim 15, further comprising a con-troller arranged to receive the first signal and in response transmit a second signal to the driver circuit.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power switch circuit with variable drive driver
GaN power switch system with drain current detection and gate overdrive control
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Gate overdrive voltage example range (normal to overdrive) | — | GaN |
Overdrive pulse predetermined time (claimed value) | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Voltage | 6–9 V | — |
Voltage | 6.2–12 V | — |
Voltage | 6.5–10 V | — |
Voltage | 7–9 V | — |
Voltage | 5–7 V | — |
Voltage | 3–12 V | — |
Voltage | 8–12 V | — |
Voltage | 100–800 V | — |
Voltage | 5–1200 V | — |
POWER SWITCHING SYSTEMS COMPRISING HIGH POWER E-MODE GAN TRANSISTORS AND DRIVER CIRCUITRY
Voltage | 6–9 V | — |
Voltage | 6.2–12 V | — |
Voltage | 6.5–10 V | — |
Voltage | 7–9 V | — |
Voltage | 5–7 V | — |
Voltage | 3–12 V | — |
Voltage | 8–12 V | — |
Voltage | 100–800 V | — |
Voltage | 5–1200 V | — |
POWER SWITCHING SYSTEMS COMPRISING HIGH POWER E-MODE GAN TRANSISTORS AND DRIVER CIRCUITRY
Voltage | 6–9 V | — |
Voltage | 6.2–12 V | — |
Voltage | 6.5–10 V | — |
Voltage | 7–9 V | — |
Voltage | 5–7 V | — |
Voltage | 3–12 V | — |
Voltage | 8–12 V | — |
Voltage | 100–800 V | — |
Voltage | 5–1200 V | — |
POWER SWITCHING SYSTEMS COMPRISING HIGH POWER E-MODE GAN TRANSISTORS AND DRIVER CIRCUITRY
Voltage | 6–9 V | — |
Voltage | 6.2–12 V | — |
Voltage | 6.5–10 V | — |
Voltage | 7–9 V | — |
Voltage | 5–7 V | — |
Voltage | 3–12 V | — |
Voltage | 8–12 V | — |
Voltage | 100–800 V | — |
Voltage | 5–1200 V | — |
POWER SWITCHING SYSTEMS COMPRISING HIGH POWER E-MODE GAN TRANSISTORS AND DRIVER CIRCUITRY