METHOD OF MANUFACTURING GAN-BASED TRANSISTORS

Takehiko Nomura

Patent

Atlas literature

Patent

US 7,943,496

METHOD OF MANUFACTURING GAN-BASED TRANSISTORS

Takehiko Nomura, Nariaki Ikeda, Shusuke Kaya, Sadahiro Kato

2011-05-17·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 2 dependent

1
IndependentGaN-based semiconductor channel layerGaN-based semiconductor electron supplying layerfirst insulating filmsecond insulating filmGaN-based field effect transistor (MOS-HEMT with recess gate)
A method of manufacturing a GaN-based ﬁeld eﬀect transistor, comprising the steps of: performing an epitaxial growth of a channel layer that is formed of a GaN-based semiconductor on to a substrate; performing an epitaxial growth of an electron supplying layer which is formed of a GaN-based semiconductor on to said channel layer, that has a larger band gap energy than that of said channel layer; forming a recess part that has a bottom face to be as a surface of said channel layer, by etching and removing a part of said electron supplying layer, and then by exposing said surface; forming a source electrode and a drain electrode on to said electron supplying layer; forming a ﬁrst insulating ﬁlm on to a surface at an inner side of said recess part, on to said electron supplying layer, on to said source electrode and on to said drain electrode, respectively; performing an alloying process in order to perform an annealing for said source electrode and for said drain electrode; removing said ﬁrst insulating ﬁlm after performing said alloying process; forming a second insulating ﬁlm on to a surface at said inner side of said recess part, on to said electron supplying layer, on to said source electrode and on to said drain electrode, respectively; and forming a gate electrode on to said second insulating ﬁlm at said recess part.
1. 2
  Dependent← claim 1GaN-based semiconductor drift layer (p-type or undoped)GaN-based field effect transistor (MOS-HEMT with recess gate)
  The method of manufacturing the GaN-based ﬁeld eﬀect transistor according to claim 1, comprising the additional step o f: forming a drift layer that is formed of a GaN-based semiconductor as a p-type or as an undoped for between said channel layer and said electron supplying layer.
2. 3
  Dependent← claim 1n-type GaN or intrinsic GaN cap layerGaN-based field effect transistor (MOS-HEMT with recess gate)
  The method of manufacturing the GaN-based ﬁeld eﬀect transistor according to claim 1, further comprising the additional step of: forming a cap layer that is formed of an n-type GaN or an intrinsic GaN on to said electron supplying layer.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based field effect transistor (MOS-HEMT with recess gate)

second insulating filmgate insulator

n-type GaN or intrinsic GaN cap layercap layer optional

GaN-based semiconductor electron supplying layerelectron supplying layer

GaN-based semiconductor drift layer (p-type or undoped)drift layer optional

GaN-based semiconductor channel layerchannel

Materials

Materials described outside the worked examples.

GaN-based semiconductor channel layer

Channel Layer

GaN-based semiconductor electron supplying layer

Electron Supplying Layer

first insulating film

Insulating Film Annealing Protection

Process steps

Additional fabrication and treatment steps described in the patent.

Epitaxial Growth

Step 1

Process details

description:Epitaxial growth of GaN-based channel layer onto substrate, followed by epitaxial growth of GaN-based electron supplying layer with larger band gap energy onto channel layer

Materials:GaN-based semiconductor channel layerGaN-based semiconductor electron supplying layer

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD OF MANUFACTURING GAN-BASED TRANSISTORS | Matter42 Literature