Patent
Atlas literature
Patent
US 12,336,336 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a top plan view of one embodiment of an exemplary processing system according to some embodi- ments of the present technology.
FIG. 2 shows exemplary operations in a method of forming semiconductor devices according to some embodi- 35 ments of the present technology.
FIGS. 3A-3H show cross-sectional views of semiconduc- tor structures being processed according to embodiments of the present technology.
FIGS. 4A-D show additional cross-sectional views of 40 semiconductor structures being processed according to embodiments of the present technology. Several of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor processing method comprising: forming subpixels on a substrate, wherein each of the subpixels comprises: a gallium-and-nitrogen-containing region formed on an exposed portion of a nucleation layer on the substrate; a porosified region formed on or in the gallium-and-nitrogen-containing region; and an active region formed on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material; forming a first reflection layer around subpixels charac-terized by a peak light emission wavelength of less than or about 500 nm, wherein the first reflection layer comprises a first metal; and forming a second reflection layer around subpixels char-acterized by a peak light emission wavelength of greater than or about 600 nm, wherein the second reflection layer comprises a second metal that is dif-B₂ ferent than the first metal, the first metal is more efficient at reflecting blue and green light than red light, and the second metal is more efficient at reflecting red light than blue and green light.
The semiconductor processing method of claim 1, wherein the method further comprises removing the substrate from the subpixels.
The semiconductor processing method of claim 1, wherein the method further comprises forming optical struc-tures on the subpixels, wherein the optical structures are formed on each of the subpixels on the gallium-and-nitro-gen-containing region.
The semiconductor processing method of claim 1, wherein the first reflection layer is formed on a blue-light-emitting-subpixel, and the second reflection layer is formed on a red-light-emitting-subpixel.
The semiconductor processing method of claim 1, wherein the first metal comprises aluminum.
The semiconductor processing method of claim 1, wherein the second metal comprises copper.
A semiconductor processing method comprising: forming a gallium-and-nitrogen-containing region on a nucleation layer on a substrate; planarizing the gallium-and-nitrogen-containing region to form a planar portion of the gallium-and-nitrogen-containing region; forming a porosified region in or on the planar portion of the gallium-and-nitrogen-containing region; forming an active region on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material, and is characterized by a peak light emission wavelength greater than or about 400 nm, and wherein a porosity of the porosified region is selected based on the peak light emission wavelength of the active region such that the porosity is less-porous when the peak light emission wavelength is character-ized as red-light emitting and more-porous when the peak light emission wavelength is characterized as green light emitting; and forming a reflection layer on the active region, wherein the reflection layer comprises a metal.
The semiconductor processing method of claim 8, wherein the gallium-and-nitrogen-containing region is formed by selective area growth on an exposed portion of the nucleation layer exposed through a patterned mask layer formed on the nucleation layer.
The semiconductor processing method of claim 8, wherein the planarizing of the gallium-and-nitrogen-con-taining region comprises annealing the gallium-and-nitro-gen-containing region to sublimate a portion of the gallium-and-nitrogen-containing region and to form the planar portion of the gallium-and-nitrogen-containing region.
The semiconductor processing method of claim 8, wherein the porosified region is formed by electrochemi-cally etching an n-doped portion of the gallium-and-nitro-gen-containing region or by electrochemically etching an n-doped layer formed on the gallium-and-nitrogen-contain-ing region.
The semiconductor processing method of claim 8, wherein the active region is characterized by a peak light emission wavelength of less than 600 nm, and the metal in the reflection layer comprises aluminum.
The semiconductor processing method of claim 8, wherein the active region is characterized by a peak light
Layer stacks claimed or described, ordered top of device to substrate.
InGaN-based micro-LED subpixel with wavelength-selective reflection layers
Materials described outside the worked examples.
gallium-and-nitrogen-containing material
indium-gallium-and-nitrogen-containing material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
blue/green subpixel peak emission wavelength upper bound | 500 nm | indium-gallium-and-nitrogen-containing material |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,336,336 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a top plan view of one embodiment of an exemplary processing system according to some embodi- ments of the present technology.
FIG. 2 shows exemplary operations in a method of forming semiconductor devices according to some embodi- 35 ments of the present technology.
FIGS. 3A-3H show cross-sectional views of semiconduc- tor structures being processed according to embodiments of the present technology.
FIGS. 4A-D show additional cross-sectional views of 40 semiconductor structures being processed according to embodiments of the present technology. Several of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor processing method comprising: forming subpixels on a substrate, wherein each of the subpixels comprises: a gallium-and-nitrogen-containing region formed on an exposed portion of a nucleation layer on the substrate; a porosified region formed on or in the gallium-and-nitrogen-containing region; and an active region formed on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material; forming a first reflection layer around subpixels charac-terized by a peak light emission wavelength of less than or about 500 nm, wherein the first reflection layer comprises a first metal; and forming a second reflection layer around subpixels char-acterized by a peak light emission wavelength of greater than or about 600 nm, wherein the second reflection layer comprises a second metal that is dif-B₂ ferent than the first metal, the first metal is more efficient at reflecting blue and green light than red light, and the second metal is more efficient at reflecting red light than blue and green light.
The semiconductor processing method of claim 1, wherein the method further comprises removing the substrate from the subpixels.
The semiconductor processing method of claim 1, wherein the method further comprises forming optical struc-tures on the subpixels, wherein the optical structures are formed on each of the subpixels on the gallium-and-nitro-gen-containing region.
The semiconductor processing method of claim 1, wherein the first reflection layer is formed on a blue-light-emitting-subpixel, and the second reflection layer is formed on a red-light-emitting-subpixel.
The semiconductor processing method of claim 1, wherein the first metal comprises aluminum.
The semiconductor processing method of claim 1, wherein the second metal comprises copper.
A semiconductor processing method comprising: forming a gallium-and-nitrogen-containing region on a nucleation layer on a substrate; planarizing the gallium-and-nitrogen-containing region to form a planar portion of the gallium-and-nitrogen-containing region; forming a porosified region in or on the planar portion of the gallium-and-nitrogen-containing region; forming an active region on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material, and is characterized by a peak light emission wavelength greater than or about 400 nm, and wherein a porosity of the porosified region is selected based on the peak light emission wavelength of the active region such that the porosity is less-porous when the peak light emission wavelength is character-ized as red-light emitting and more-porous when the peak light emission wavelength is characterized as green light emitting; and forming a reflection layer on the active region, wherein the reflection layer comprises a metal.
The semiconductor processing method of claim 8, wherein the gallium-and-nitrogen-containing region is formed by selective area growth on an exposed portion of the nucleation layer exposed through a patterned mask layer formed on the nucleation layer.
The semiconductor processing method of claim 8, wherein the planarizing of the gallium-and-nitrogen-con-taining region comprises annealing the gallium-and-nitro-gen-containing region to sublimate a portion of the gallium-and-nitrogen-containing region and to form the planar portion of the gallium-and-nitrogen-containing region.
The semiconductor processing method of claim 8, wherein the porosified region is formed by electrochemi-cally etching an n-doped portion of the gallium-and-nitro-gen-containing region or by electrochemically etching an n-doped layer formed on the gallium-and-nitrogen-contain-ing region.
The semiconductor processing method of claim 8, wherein the active region is characterized by a peak light emission wavelength of less than 600 nm, and the metal in the reflection layer comprises aluminum.
The semiconductor processing method of claim 8, wherein the active region is characterized by a peak light
Layer stacks claimed or described, ordered top of device to substrate.
InGaN-based micro-LED subpixel with wavelength-selective reflection layers
Materials described outside the worked examples.
gallium-and-nitrogen-containing material
indium-gallium-and-nitrogen-containing material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
blue/green subpixel peak emission wavelength upper bound | 500 nm | indium-gallium-and-nitrogen-containing material |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,336,336 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a top plan view of one embodiment of an exemplary processing system according to some embodi- ments of the present technology.
FIG. 2 shows exemplary operations in a method of forming semiconductor devices according to some embodi- 35 ments of the present technology.
FIGS. 3A-3H show cross-sectional views of semiconduc- tor structures being processed according to embodiments of the present technology.
FIGS. 4A-D show additional cross-sectional views of 40 semiconductor structures being processed according to embodiments of the present technology. Several of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor processing method comprising: forming subpixels on a substrate, wherein each of the subpixels comprises: a gallium-and-nitrogen-containing region formed on an exposed portion of a nucleation layer on the substrate; a porosified region formed on or in the gallium-and-nitrogen-containing region; and an active region formed on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material; forming a first reflection layer around subpixels charac-terized by a peak light emission wavelength of less than or about 500 nm, wherein the first reflection layer comprises a first metal; and forming a second reflection layer around subpixels char-acterized by a peak light emission wavelength of greater than or about 600 nm, wherein the second reflection layer comprises a second metal that is dif-B₂ ferent than the first metal, the first metal is more efficient at reflecting blue and green light than red light, and the second metal is more efficient at reflecting red light than blue and green light.
The semiconductor processing method of claim 1, wherein the method further comprises removing the substrate from the subpixels.
The semiconductor processing method of claim 1, wherein the method further comprises forming optical struc-tures on the subpixels, wherein the optical structures are formed on each of the subpixels on the gallium-and-nitro-gen-containing region.
The semiconductor processing method of claim 1, wherein the first reflection layer is formed on a blue-light-emitting-subpixel, and the second reflection layer is formed on a red-light-emitting-subpixel.
The semiconductor processing method of claim 1, wherein the first metal comprises aluminum.
The semiconductor processing method of claim 1, wherein the second metal comprises copper.
A semiconductor processing method comprising: forming a gallium-and-nitrogen-containing region on a nucleation layer on a substrate; planarizing the gallium-and-nitrogen-containing region to form a planar portion of the gallium-and-nitrogen-containing region; forming a porosified region in or on the planar portion of the gallium-and-nitrogen-containing region; forming an active region on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material, and is characterized by a peak light emission wavelength greater than or about 400 nm, and wherein a porosity of the porosified region is selected based on the peak light emission wavelength of the active region such that the porosity is less-porous when the peak light emission wavelength is character-ized as red-light emitting and more-porous when the peak light emission wavelength is characterized as green light emitting; and forming a reflection layer on the active region, wherein the reflection layer comprises a metal.
The semiconductor processing method of claim 8, wherein the gallium-and-nitrogen-containing region is formed by selective area growth on an exposed portion of the nucleation layer exposed through a patterned mask layer formed on the nucleation layer.
The semiconductor processing method of claim 8, wherein the planarizing of the gallium-and-nitrogen-con-taining region comprises annealing the gallium-and-nitro-gen-containing region to sublimate a portion of the gallium-and-nitrogen-containing region and to form the planar portion of the gallium-and-nitrogen-containing region.
The semiconductor processing method of claim 8, wherein the porosified region is formed by electrochemi-cally etching an n-doped portion of the gallium-and-nitro-gen-containing region or by electrochemically etching an n-doped layer formed on the gallium-and-nitrogen-contain-ing region.
The semiconductor processing method of claim 8, wherein the active region is characterized by a peak light emission wavelength of less than 600 nm, and the metal in the reflection layer comprises aluminum.
The semiconductor processing method of claim 8, wherein the active region is characterized by a peak light
Layer stacks claimed or described, ordered top of device to substrate.
InGaN-based micro-LED subpixel with wavelength-selective reflection layers
Materials described outside the worked examples.
gallium-and-nitrogen-containing material
indium-gallium-and-nitrogen-containing material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
blue/green subpixel peak emission wavelength upper bound | 500 nm | indium-gallium-and-nitrogen-containing material |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,336,336 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a top plan view of one embodiment of an exemplary processing system according to some embodi- ments of the present technology.
FIG. 2 shows exemplary operations in a method of forming semiconductor devices according to some embodi- 35 ments of the present technology.
FIGS. 3A-3H show cross-sectional views of semiconduc- tor structures being processed according to embodiments of the present technology.
FIGS. 4A-D show additional cross-sectional views of 40 semiconductor structures being processed according to embodiments of the present technology. Several of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor processing method comprising: forming subpixels on a substrate, wherein each of the subpixels comprises: a gallium-and-nitrogen-containing region formed on an exposed portion of a nucleation layer on the substrate; a porosified region formed on or in the gallium-and-nitrogen-containing region; and an active region formed on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material; forming a first reflection layer around subpixels charac-terized by a peak light emission wavelength of less than or about 500 nm, wherein the first reflection layer comprises a first metal; and forming a second reflection layer around subpixels char-acterized by a peak light emission wavelength of greater than or about 600 nm, wherein the second reflection layer comprises a second metal that is dif-B₂ ferent than the first metal, the first metal is more efficient at reflecting blue and green light than red light, and the second metal is more efficient at reflecting red light than blue and green light.
The semiconductor processing method of claim 1, wherein the method further comprises removing the substrate from the subpixels.
The semiconductor processing method of claim 1, wherein the method further comprises forming optical struc-tures on the subpixels, wherein the optical structures are formed on each of the subpixels on the gallium-and-nitro-gen-containing region.
The semiconductor processing method of claim 1, wherein the first reflection layer is formed on a blue-light-emitting-subpixel, and the second reflection layer is formed on a red-light-emitting-subpixel.
The semiconductor processing method of claim 1, wherein the first metal comprises aluminum.
The semiconductor processing method of claim 1, wherein the second metal comprises copper.
A semiconductor processing method comprising: forming a gallium-and-nitrogen-containing region on a nucleation layer on a substrate; planarizing the gallium-and-nitrogen-containing region to form a planar portion of the gallium-and-nitrogen-containing region; forming a porosified region in or on the planar portion of the gallium-and-nitrogen-containing region; forming an active region on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material, and is characterized by a peak light emission wavelength greater than or about 400 nm, and wherein a porosity of the porosified region is selected based on the peak light emission wavelength of the active region such that the porosity is less-porous when the peak light emission wavelength is character-ized as red-light emitting and more-porous when the peak light emission wavelength is characterized as green light emitting; and forming a reflection layer on the active region, wherein the reflection layer comprises a metal.
The semiconductor processing method of claim 8, wherein the gallium-and-nitrogen-containing region is formed by selective area growth on an exposed portion of the nucleation layer exposed through a patterned mask layer formed on the nucleation layer.
The semiconductor processing method of claim 8, wherein the planarizing of the gallium-and-nitrogen-con-taining region comprises annealing the gallium-and-nitro-gen-containing region to sublimate a portion of the gallium-and-nitrogen-containing region and to form the planar portion of the gallium-and-nitrogen-containing region.
The semiconductor processing method of claim 8, wherein the porosified region is formed by electrochemi-cally etching an n-doped portion of the gallium-and-nitro-gen-containing region or by electrochemically etching an n-doped layer formed on the gallium-and-nitrogen-contain-ing region.
The semiconductor processing method of claim 8, wherein the active region is characterized by a peak light emission wavelength of less than 600 nm, and the metal in the reflection layer comprises aluminum.
The semiconductor processing method of claim 8, wherein the active region is characterized by a peak light
Layer stacks claimed or described, ordered top of device to substrate.
InGaN-based micro-LED subpixel with wavelength-selective reflection layers
Materials described outside the worked examples.
gallium-and-nitrogen-containing material
indium-gallium-and-nitrogen-containing material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
blue/green subpixel peak emission wavelength upper bound | 500 nm | indium-gallium-and-nitrogen-containing material |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 19
Related documents with shared materials, methods, properties, or citations.
InGaN-based micro-LED with planarized GaN and porosity-tuned reflection layer
aluminum
Al
copper
Cu
nucleation layer nitride material
AlN
NbN
TiN
HfN
red subpixel peak emission wavelength lower bound | 600 nm | indium-gallium-and-nitrogen-containing material |
active region minimum peak emission wavelength (claim 8) | 400 nm | indium-gallium-and-nitrogen-containing material |
Thickness | ≤ 600 nm | — |
Thickness | ≥ 600 nm | — |
Cited non-patent literature · 2
InGaN-based micro-LED with planarized GaN and porosity-tuned reflection layer
aluminum
Al
copper
Cu
nucleation layer nitride material
AlN
NbN
TiN
HfN
red subpixel peak emission wavelength lower bound | 600 nm | indium-gallium-and-nitrogen-containing material |
active region minimum peak emission wavelength (claim 8) | 400 nm | indium-gallium-and-nitrogen-containing material |
Thickness | ≤ 600 nm | — |
Thickness | ≥ 600 nm | — |
Cited non-patent literature · 2
InGaN-based micro-LED with planarized GaN and porosity-tuned reflection layer
aluminum
Al
copper
Cu
nucleation layer nitride material
AlN
NbN
TiN
HfN
red subpixel peak emission wavelength lower bound | 600 nm | indium-gallium-and-nitrogen-containing material |
active region minimum peak emission wavelength (claim 8) | 400 nm | indium-gallium-and-nitrogen-containing material |
Thickness | ≤ 600 nm | — |
Thickness | ≥ 600 nm | — |
Cited non-patent literature · 2
InGaN-based micro-LED with planarized GaN and porosity-tuned reflection layer
aluminum
Al
copper
Cu
nucleation layer nitride material
AlN
NbN
TiN
HfN
red subpixel peak emission wavelength lower bound | 600 nm | indium-gallium-and-nitrogen-containing material |
active region minimum peak emission wavelength (claim 8) | 400 nm | indium-gallium-and-nitrogen-containing material |
Thickness | ≤ 600 nm | — |
Thickness | ≥ 600 nm | — |
Cited non-patent literature · 2
