Patent
US 10,883,176METHOD FOR DIRECTLY SYNTHESIZING GRAPHENE ON SURFACE OF TARGET OBJECT AND DEVICE INCLUDING GRAPHENE PREPARED USING THE METHOD
Yong-Won SONG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,883,176Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram for illustrating a process of synthesizing graphene using a metal according to a conventional technique.
FIG. 2 is a diagram showing a result obtained by directly synthesizing graphene on a surface of a target object according to an embodiment of the present …
FIG. 3 is a diagram for illustrating a method for synthesizing graphene on a surface of a target object according to an embodiment of the present disclosure.
FIG. 4 is a diagram for illustrating the principle of the method for synthesizing graphene on a surface of a target board having a customized surface according …
FIG. 5 is a diagram showing the influence applied to the quality of graphene by an interval between a target board and a non-metal layer according to an …
FIG. 6 is a schematic diagram showing a laser pulse device including a bare fiber where the graphene of
FIGS. 7A to 7 D are diagrams showing characteristics of pulse generated by the laser pulse device of
FIG. 8 is a schematic diagram showing an optical switch device including a bare fiber where the graphene of
FIGS. 9A and 9B are diagrams showing spectrum results of a signal modulated at the optical switch device of
FIGS. 10 A to 10 B are diagrams showing characteristics of the signal generated in
FIG. 11 is a diagram showing a conceptual structure of a graphene thin film transistor ac c ording to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for directly synthesizing graphene on a surface of a target object, comprising: forming a non-metal layer on a support substrate; disposing the target object in a space above the support substrate,; and injecting a carbon precursor to form graphene on the surface of the target object to synthesize a graphene film, wherein the graphene is nucleated and grown on the surface of the target object by a decomposition of the carbon precursor, the carbon precursor is decomposed by heat with catalytic assistance from the non-metal layer to diffuse a carbon atom into the space above the support substrate, and a-the carbon atom from the decomposition of the precursor is anchored on the surface of the target object to form the graphene film, wherein the target object is located within the space above the support substrate comprising the diffused carbon atom. Currently amended
The method according to claim 1, wherein the carbon atom is supplied to surface of the target object by means of dissociative adsorption to nucleate and grow the graphene, an energy of metastable atom of the non-metallic catalytic layer is supplied to the carbon precursor for the decomposition of the carbon precursor to generate the carbon atom. Original
The method according to claim 1, wherein at least a part of the surface of the target object has a three-dimensional shape. Original
The method according to claim 1, wherein the disposing the target object includes that the non-metal layer and the target object are at least partially not in contact with each other. Original
The method according to claim 1, wherein the support substrate has a groove having a V-shaped form or has a constant interval between the support substrate and the target object. Original
The method according to claim 1, further comprising: installing a screen to block at least a part of an ambient space of the target object. Original
8 The method according to claim 1, wherein the non-metal layer is made of gamma (y) alumina. Original
The method according to claim 1, wherein the forming a non-metal layer includes forming an amorphous non-metal layer by using atomic layer deposition (ALD). Currently amended
The method according to claim 1, further comprising: synthesizing another graphene on a surface of another target object by reusing the non- metal layer formed on the support substrate. Original
The method according to claim 1, wherein the carbon precursor includes any one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol, and combinations thereof. Original
The method according to claim 1, wherein the reaction gas includes any one selected from the group consisting of nitrogen, helium, neon, argon, hydrogen, and combinations thereof. Original
The method according to claim 1, wherein the target object is an optical fiber, and a surface of the optical fiber is at least partially removed. Original
A laser pulse device, which uses a graphene film synthesized according to claim 1 as a saturable absorber, wherein the laser pulse device includes at least one of a light source, a coupler, an amplifier, an isolator, a polarization controller (PC), and a single-mode fiber (SMF). Withdrawn
An optical switch device, which uses a graphene film synthesized according to claim 1 as a saturable absorber, wherein the optical switch device includes at least one of a first channel and a second channel configured to generate different continuous wave lasers, a modulator configured to modulate the lasers, a tunable filter configured to reduce an ambient noise while matching a central wavelength with the lasers, an amplifier configured to amplify intensities of the lasers, respectively, and a polarization controller (PC) configured to control polarization of the lasers. Withdrawn
The method according to claim 1, wherein the layer. New layer; a gate electrode located on an opposite having the conductive graphene; and a second wherein the dielectric layer is at least and the second graphene film is located at a target object is opposite to the non-metal
Layer stacks claimed or described, ordered top of device to substrate.
laser pulse device
optical switch device
thin film transistor
Materials described outside the worked examples.
graphene
C
gamma alumina non-metal layer
Al₂O₃
carbon precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 is a diagram showing a conceptual structure of a graphene thin film transistor ac c ording to an embodiment of the present disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–2000000 nm | — |
Related documents with shared materials, methods, properties, or citations.
METHOD OF INTERCALATING INSULATING LAYER BETWEEN METAL AND GRAPHENE LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE INTERCALATION METHOD
METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM
Patent
Atlas literature
Patent
US 10,883,176Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram for illustrating a process of synthesizing graphene using a metal according to a conventional technique.
FIG. 2 is a diagram showing a result obtained by directly synthesizing graphene on a surface of a target object according to an embodiment of the present …
FIG. 3 is a diagram for illustrating a method for synthesizing graphene on a surface of a target object according to an embodiment of the present disclosure.
FIG. 4 is a diagram for illustrating the principle of the method for synthesizing graphene on a surface of a target board having a customized surface according …
FIG. 5 is a diagram showing the influence applied to the quality of graphene by an interval between a target board and a non-metal layer according to an …
FIG. 6 is a schematic diagram showing a laser pulse device including a bare fiber where the graphene of
FIGS. 7A to 7 D are diagrams showing characteristics of pulse generated by the laser pulse device of
FIG. 8 is a schematic diagram showing an optical switch device including a bare fiber where the graphene of
FIGS. 9A and 9B are diagrams showing spectrum results of a signal modulated at the optical switch device of
FIGS. 10 A to 10 B are diagrams showing characteristics of the signal generated in
FIG. 11 is a diagram showing a conceptual structure of a graphene thin film transistor ac c ording to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for directly synthesizing graphene on a surface of a target object, comprising: forming a non-metal layer on a support substrate; disposing the target object in a space above the support substrate,; and injecting a carbon precursor to form graphene on the surface of the target object to synthesize a graphene film, wherein the graphene is nucleated and grown on the surface of the target object by a decomposition of the carbon precursor, the carbon precursor is decomposed by heat with catalytic assistance from the non-metal layer to diffuse a carbon atom into the space above the support substrate, and a-the carbon atom from the decomposition of the precursor is anchored on the surface of the target object to form the graphene film, wherein the target object is located within the space above the support substrate comprising the diffused carbon atom. Currently amended
The method according to claim 1, wherein the carbon atom is supplied to surface of the target object by means of dissociative adsorption to nucleate and grow the graphene, an energy of metastable atom of the non-metallic catalytic layer is supplied to the carbon precursor for the decomposition of the carbon precursor to generate the carbon atom. Original
The method according to claim 1, wherein at least a part of the surface of the target object has a three-dimensional shape. Original
The method according to claim 1, wherein the disposing the target object includes that the non-metal layer and the target object are at least partially not in contact with each other. Original
The method according to claim 1, wherein the support substrate has a groove having a V-shaped form or has a constant interval between the support substrate and the target object. Original
The method according to claim 1, further comprising: installing a screen to block at least a part of an ambient space of the target object. Original
8 The method according to claim 1, wherein the non-metal layer is made of gamma (y) alumina. Original
The method according to claim 1, wherein the forming a non-metal layer includes forming an amorphous non-metal layer by using atomic layer deposition (ALD). Currently amended
The method according to claim 1, further comprising: synthesizing another graphene on a surface of another target object by reusing the non- metal layer formed on the support substrate. Original
The method according to claim 1, wherein the carbon precursor includes any one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol, and combinations thereof. Original
The method according to claim 1, wherein the reaction gas includes any one selected from the group consisting of nitrogen, helium, neon, argon, hydrogen, and combinations thereof. Original
The method according to claim 1, wherein the target object is an optical fiber, and a surface of the optical fiber is at least partially removed. Original
A laser pulse device, which uses a graphene film synthesized according to claim 1 as a saturable absorber, wherein the laser pulse device includes at least one of a light source, a coupler, an amplifier, an isolator, a polarization controller (PC), and a single-mode fiber (SMF). Withdrawn
An optical switch device, which uses a graphene film synthesized according to claim 1 as a saturable absorber, wherein the optical switch device includes at least one of a first channel and a second channel configured to generate different continuous wave lasers, a modulator configured to modulate the lasers, a tunable filter configured to reduce an ambient noise while matching a central wavelength with the lasers, an amplifier configured to amplify intensities of the lasers, respectively, and a polarization controller (PC) configured to control polarization of the lasers. Withdrawn
The method according to claim 1, wherein the layer. New layer; a gate electrode located on an opposite having the conductive graphene; and a second wherein the dielectric layer is at least and the second graphene film is located at a target object is opposite to the non-metal
Layer stacks claimed or described, ordered top of device to substrate.
laser pulse device
optical switch device
thin film transistor
Materials described outside the worked examples.
graphene
C
gamma alumina non-metal layer
Al₂O₃
carbon precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 is a diagram showing a conceptual structure of a graphene thin film transistor ac c ording to an embodiment of the present disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–2000000 nm | — |
Related documents with shared materials, methods, properties, or citations.
METHOD OF INTERCALATING INSULATING LAYER BETWEEN METAL AND GRAPHENE LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE INTERCALATION METHOD
METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM
Patent
Atlas literature
Patent
US 10,883,176Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram for illustrating a process of synthesizing graphene using a metal according to a conventional technique.
FIG. 2 is a diagram showing a result obtained by directly synthesizing graphene on a surface of a target object according to an embodiment of the present …
FIG. 3 is a diagram for illustrating a method for synthesizing graphene on a surface of a target object according to an embodiment of the present disclosure.
FIG. 4 is a diagram for illustrating the principle of the method for synthesizing graphene on a surface of a target board having a customized surface according …
FIG. 5 is a diagram showing the influence applied to the quality of graphene by an interval between a target board and a non-metal layer according to an …
FIG. 6 is a schematic diagram showing a laser pulse device including a bare fiber where the graphene of
FIGS. 7A to 7 D are diagrams showing characteristics of pulse generated by the laser pulse device of
FIG. 8 is a schematic diagram showing an optical switch device including a bare fiber where the graphene of
FIGS. 9A and 9B are diagrams showing spectrum results of a signal modulated at the optical switch device of
FIGS. 10 A to 10 B are diagrams showing characteristics of the signal generated in
FIG. 11 is a diagram showing a conceptual structure of a graphene thin film transistor ac c ording to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for directly synthesizing graphene on a surface of a target object, comprising: forming a non-metal layer on a support substrate; disposing the target object in a space above the support substrate,; and injecting a carbon precursor to form graphene on the surface of the target object to synthesize a graphene film, wherein the graphene is nucleated and grown on the surface of the target object by a decomposition of the carbon precursor, the carbon precursor is decomposed by heat with catalytic assistance from the non-metal layer to diffuse a carbon atom into the space above the support substrate, and a-the carbon atom from the decomposition of the precursor is anchored on the surface of the target object to form the graphene film, wherein the target object is located within the space above the support substrate comprising the diffused carbon atom. Currently amended
The method according to claim 1, wherein the carbon atom is supplied to surface of the target object by means of dissociative adsorption to nucleate and grow the graphene, an energy of metastable atom of the non-metallic catalytic layer is supplied to the carbon precursor for the decomposition of the carbon precursor to generate the carbon atom. Original
The method according to claim 1, wherein at least a part of the surface of the target object has a three-dimensional shape. Original
The method according to claim 1, wherein the disposing the target object includes that the non-metal layer and the target object are at least partially not in contact with each other. Original
The method according to claim 1, wherein the support substrate has a groove having a V-shaped form or has a constant interval between the support substrate and the target object. Original
The method according to claim 1, further comprising: installing a screen to block at least a part of an ambient space of the target object. Original
8 The method according to claim 1, wherein the non-metal layer is made of gamma (y) alumina. Original
The method according to claim 1, wherein the forming a non-metal layer includes forming an amorphous non-metal layer by using atomic layer deposition (ALD). Currently amended
The method according to claim 1, further comprising: synthesizing another graphene on a surface of another target object by reusing the non- metal layer formed on the support substrate. Original
The method according to claim 1, wherein the carbon precursor includes any one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol, and combinations thereof. Original
The method according to claim 1, wherein the reaction gas includes any one selected from the group consisting of nitrogen, helium, neon, argon, hydrogen, and combinations thereof. Original
The method according to claim 1, wherein the target object is an optical fiber, and a surface of the optical fiber is at least partially removed. Original
A laser pulse device, which uses a graphene film synthesized according to claim 1 as a saturable absorber, wherein the laser pulse device includes at least one of a light source, a coupler, an amplifier, an isolator, a polarization controller (PC), and a single-mode fiber (SMF). Withdrawn
An optical switch device, which uses a graphene film synthesized according to claim 1 as a saturable absorber, wherein the optical switch device includes at least one of a first channel and a second channel configured to generate different continuous wave lasers, a modulator configured to modulate the lasers, a tunable filter configured to reduce an ambient noise while matching a central wavelength with the lasers, an amplifier configured to amplify intensities of the lasers, respectively, and a polarization controller (PC) configured to control polarization of the lasers. Withdrawn
The method according to claim 1, wherein the layer. New layer; a gate electrode located on an opposite having the conductive graphene; and a second wherein the dielectric layer is at least and the second graphene film is located at a target object is opposite to the non-metal
Layer stacks claimed or described, ordered top of device to substrate.
laser pulse device
optical switch device
thin film transistor
Materials described outside the worked examples.
graphene
C
gamma alumina non-metal layer
Al₂O₃
carbon precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 is a diagram showing a conceptual structure of a graphene thin film transistor ac c ording to an embodiment of the present disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–2000000 nm | — |
Related documents with shared materials, methods, properties, or citations.
METHOD OF INTERCALATING INSULATING LAYER BETWEEN METAL AND GRAPHENE LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE INTERCALATION METHOD
METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM
Patent
Atlas literature
Patent
US 10,883,176Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram for illustrating a process of synthesizing graphene using a metal according to a conventional technique.
FIG. 2 is a diagram showing a result obtained by directly synthesizing graphene on a surface of a target object according to an embodiment of the present …
FIG. 3 is a diagram for illustrating a method for synthesizing graphene on a surface of a target object according to an embodiment of the present disclosure.
FIG. 4 is a diagram for illustrating the principle of the method for synthesizing graphene on a surface of a target board having a customized surface according …
FIG. 5 is a diagram showing the influence applied to the quality of graphene by an interval between a target board and a non-metal layer according to an …
FIG. 6 is a schematic diagram showing a laser pulse device including a bare fiber where the graphene of
FIGS. 7A to 7 D are diagrams showing characteristics of pulse generated by the laser pulse device of
FIG. 8 is a schematic diagram showing an optical switch device including a bare fiber where the graphene of
FIGS. 9A and 9B are diagrams showing spectrum results of a signal modulated at the optical switch device of
FIGS. 10 A to 10 B are diagrams showing characteristics of the signal generated in
FIG. 11 is a diagram showing a conceptual structure of a graphene thin film transistor ac c ording to an embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for directly synthesizing graphene on a surface of a target object, comprising: forming a non-metal layer on a support substrate; disposing the target object in a space above the support substrate,; and injecting a carbon precursor to form graphene on the surface of the target object to synthesize a graphene film, wherein the graphene is nucleated and grown on the surface of the target object by a decomposition of the carbon precursor, the carbon precursor is decomposed by heat with catalytic assistance from the non-metal layer to diffuse a carbon atom into the space above the support substrate, and a-the carbon atom from the decomposition of the precursor is anchored on the surface of the target object to form the graphene film, wherein the target object is located within the space above the support substrate comprising the diffused carbon atom. Currently amended
The method according to claim 1, wherein the carbon atom is supplied to surface of the target object by means of dissociative adsorption to nucleate and grow the graphene, an energy of metastable atom of the non-metallic catalytic layer is supplied to the carbon precursor for the decomposition of the carbon precursor to generate the carbon atom. Original
The method according to claim 1, wherein at least a part of the surface of the target object has a three-dimensional shape. Original
The method according to claim 1, wherein the disposing the target object includes that the non-metal layer and the target object are at least partially not in contact with each other. Original
The method according to claim 1, wherein the support substrate has a groove having a V-shaped form or has a constant interval between the support substrate and the target object. Original
The method according to claim 1, further comprising: installing a screen to block at least a part of an ambient space of the target object. Original
8 The method according to claim 1, wherein the non-metal layer is made of gamma (y) alumina. Original
The method according to claim 1, wherein the forming a non-metal layer includes forming an amorphous non-metal layer by using atomic layer deposition (ALD). Currently amended
The method according to claim 1, further comprising: synthesizing another graphene on a surface of another target object by reusing the non- metal layer formed on the support substrate. Original
The method according to claim 1, wherein the carbon precursor includes any one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol, and combinations thereof. Original
The method according to claim 1, wherein the reaction gas includes any one selected from the group consisting of nitrogen, helium, neon, argon, hydrogen, and combinations thereof. Original
The method according to claim 1, wherein the target object is an optical fiber, and a surface of the optical fiber is at least partially removed. Original
A laser pulse device, which uses a graphene film synthesized according to claim 1 as a saturable absorber, wherein the laser pulse device includes at least one of a light source, a coupler, an amplifier, an isolator, a polarization controller (PC), and a single-mode fiber (SMF). Withdrawn
An optical switch device, which uses a graphene film synthesized according to claim 1 as a saturable absorber, wherein the optical switch device includes at least one of a first channel and a second channel configured to generate different continuous wave lasers, a modulator configured to modulate the lasers, a tunable filter configured to reduce an ambient noise while matching a central wavelength with the lasers, an amplifier configured to amplify intensities of the lasers, respectively, and a polarization controller (PC) configured to control polarization of the lasers. Withdrawn
The method according to claim 1, wherein the layer. New layer; a gate electrode located on an opposite having the conductive graphene; and a second wherein the dielectric layer is at least and the second graphene film is located at a target object is opposite to the non-metal
Layer stacks claimed or described, ordered top of device to substrate.
laser pulse device
optical switch device
thin film transistor
Materials described outside the worked examples.
graphene
C
gamma alumina non-metal layer
Al₂O₃
carbon precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 is a diagram showing a conceptual structure of a graphene thin film transistor ac c ording to an embodiment of the present disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–2000000 nm | — |
Related documents with shared materials, methods, properties, or citations.
METHOD OF INTERCALATING INSULATING LAYER BETWEEN METAL AND GRAPHENE LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE INTERCALATION METHOD
METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM
trimethyl aluminum
(CH₃)3Al
aluminum isopropoxide
Al(OC₃H₇)3
methyl pyrrolidine-trimethyl aluminum
ethyl-pyridine-triethyl-aluminum
ethyl-pyridine-dimethyl-aluminum hydride
trimethyl aluminum
(CH₃)3Al
aluminum isopropoxide
Al(OC₃H₇)3
methyl pyrrolidine-trimethyl aluminum
ethyl-pyridine-triethyl-aluminum
ethyl-pyridine-dimethyl-aluminum hydride
trimethyl aluminum
(CH₃)3Al
aluminum isopropoxide
Al(OC₃H₇)3
methyl pyrrolidine-trimethyl aluminum
ethyl-pyridine-triethyl-aluminum
ethyl-pyridine-dimethyl-aluminum hydride
trimethyl aluminum
(CH₃)3Al
aluminum isopropoxide
Al(OC₃H₇)3
methyl pyrrolidine-trimethyl aluminum
ethyl-pyridine-triethyl-aluminum
ethyl-pyridine-dimethyl-aluminum hydride