Patent
US 9,105,403nanorods (semiconducting or conducting)
matrix material
nitrogen-doped graphene-based structures
graphitic material
Figure 3 c is an SEM image of the same large single sheet of graphene. Figure 3d is a single cross-section (top) that indicates step heights of less than 0.6 nm as the AFM tip traverses the solid line in Figure 3b. A histogram (bottom of Figure 3d) of height profiles collected over the entire area …
Figure 3 c is an SEM image of the same large single sheet of graphene. Figure 3d is a single cross-section (top) that indicates step heights of less than 0.6 nm as the AFM tip traverses the solid line in Figure 3b. A histogram (bottom of Figure 3d) of height profiles collected over the entire area …
Figure 8 shows representative SEM and AFM images of G-CNT film, along with 3-D topographies of (Figure 8a) Chemically converted graphene. (Figure 8b) Single wall carbon nanotubes network. (Figure 8c) G-CNT hybrid film. Note that the dense network of G- CNT film exceeds the percolation threshold with …
Figure 8 shows representative SEM and AFM images of G-CNT film, along with 3-D topographies of (Figure 8a) Chemically converted graphene. (Figure 8b) Single wall carbon nanotubes network. (Figure 8c) G-CNT hybrid film. Note that the dense network of G- CNT film exceeds the percolation threshold with …
Figure 9 shows optical, electrical and mechanical characterization of G-CNT films according to an embodiment of the current invention. Figure 9a shows photographs of G- CNT film with increasing spin speed (from left to right), 1,050, 1,250, 1,500, 1,750 RPM, respectively. Figure 9b shows optical …
Figure 10 shows representative SEM images of a variety patterns of G-CNT electrode and device structure along with current density-voltage (J- V) curves. Figure l0a shows SEM images of G-CNT patterns spin-coated on Si/SiO₂ substrates. Figure lO b shows a 7 58086-264718 device configuration of G-CNT …
Figure 10 shows representative SEM images of a variety patterns of G-CNT electrode and device structure along with current density-voltage (J- V) curves. Figure l0a shows SEM images of G-CNT patterns spin-coated on Si/SiO₂ substrates. Figure lO b shows a 7 58086-264718 device configuration of G-CNT …
Figure 11 shows sheet resistance of G-CNT films before (squares) and after (circles) chemical doping. An exposure of 15 minutes to room temperature vapors resulted in a decrease in sheet resistance by a factor of 1.5 to 2 for all deposited films.
Figure 13 shows Micro Raman spectra that were collected inside and outside a rectangular region on (Figure 13a) glass and (Figure 13b) Si/SiO₂ according to an embodiment of the current invention. Raman intensity mapping of the G peak indicates that graphene has been completely removed from a …
Figure 16 shows an atomic force microscope image and the corresponding line- scan that confirm a step height of less than 1 nm, indicative of single sheet graphene according to this embodiment of the current invention. DETAILED DESCRIPTI O N [0031] Some embodiments of the current invention are …
Figure 14 shows Si 2p (top) and C 1 s (bottom) XPS spectra from the deposited region both before and after annealing. The Si peak is predominately Si/SiO 2, but displays a large shoulder consistent with dimethylsiloxane before the annealing process. The shoulder was nearly gone after heating at 1 …
sheet resistance of transparent electrode (claimed maximum, variant 1) |
| 700 Ω/sq |
graphene-based structures (carbon macro-molecular structures) |
sheet resistance of transparent electrode (claimed maximum, variant 2) | 44 Ω/sq | graphene-based structures (carbon macro-molecular structures) |
transparency of transparent electrode (claimed minimum, variant 3) | 87 % | graphene-based structures (carbon macro-molecular structures) |
sheet resistance of transparent electrode (claimed maximum, variant 3) | 600 Ω/sq | graphene-based structures (carbon macro-molecular structures) |
nanorods (semiconducting or conducting)
matrix material
nitrogen-doped graphene-based structures
graphitic material
Figure 3 c is an SEM image of the same large single sheet of graphene. Figure 3d is a single cross-section (top) that indicates step heights of less than 0.6 nm as the AFM tip traverses the solid line in Figure 3b. A histogram (bottom of Figure 3d) of height profiles collected over the entire area …
Figure 3 c is an SEM image of the same large single sheet of graphene. Figure 3d is a single cross-section (top) that indicates step heights of less than 0.6 nm as the AFM tip traverses the solid line in Figure 3b. A histogram (bottom of Figure 3d) of height profiles collected over the entire area …
Figure 8 shows representative SEM and AFM images of G-CNT film, along with 3-D topographies of (Figure 8a) Chemically converted graphene. (Figure 8b) Single wall carbon nanotubes network. (Figure 8c) G-CNT hybrid film. Note that the dense network of G- CNT film exceeds the percolation threshold with …
Figure 8 shows representative SEM and AFM images of G-CNT film, along with 3-D topographies of (Figure 8a) Chemically converted graphene. (Figure 8b) Single wall carbon nanotubes network. (Figure 8c) G-CNT hybrid film. Note that the dense network of G- CNT film exceeds the percolation threshold with …
Figure 9 shows optical, electrical and mechanical characterization of G-CNT films according to an embodiment of the current invention. Figure 9a shows photographs of G- CNT film with increasing spin speed (from left to right), 1,050, 1,250, 1,500, 1,750 RPM, respectively. Figure 9b shows optical …
Figure 10 shows representative SEM images of a variety patterns of G-CNT electrode and device structure along with current density-voltage (J- V) curves. Figure l0a shows SEM images of G-CNT patterns spin-coated on Si/SiO₂ substrates. Figure lO b shows a 7 58086-264718 device configuration of G-CNT …
Figure 10 shows representative SEM images of a variety patterns of G-CNT electrode and device structure along with current density-voltage (J- V) curves. Figure l0a shows SEM images of G-CNT patterns spin-coated on Si/SiO₂ substrates. Figure lO b shows a 7 58086-264718 device configuration of G-CNT …
Figure 11 shows sheet resistance of G-CNT films before (squares) and after (circles) chemical doping. An exposure of 15 minutes to room temperature vapors resulted in a decrease in sheet resistance by a factor of 1.5 to 2 for all deposited films.
Figure 13 shows Micro Raman spectra that were collected inside and outside a rectangular region on (Figure 13a) glass and (Figure 13b) Si/SiO₂ according to an embodiment of the current invention. Raman intensity mapping of the G peak indicates that graphene has been completely removed from a …
Figure 16 shows an atomic force microscope image and the corresponding line- scan that confirm a step height of less than 1 nm, indicative of single sheet graphene according to this embodiment of the current invention. DETAILED DESCRIPTI O N [0031] Some embodiments of the current invention are …
Figure 14 shows Si 2p (top) and C 1 s (bottom) XPS spectra from the deposited region both before and after annealing. The Si peak is predominately Si/SiO 2, but displays a large shoulder consistent with dimethylsiloxane before the annealing process. The shoulder was nearly gone after heating at 1 …
sheet resistance of transparent electrode (claimed maximum, variant 1) |
| 700 Ω/sq |
graphene-based structures (carbon macro-molecular structures) |
sheet resistance of transparent electrode (claimed maximum, variant 2) | 44 Ω/sq | graphene-based structures (carbon macro-molecular structures) |
transparency of transparent electrode (claimed minimum, variant 3) | 87 % | graphene-based structures (carbon macro-molecular structures) |
sheet resistance of transparent electrode (claimed maximum, variant 3) | 600 Ω/sq | graphene-based structures (carbon macro-molecular structures) |
nanorods (semiconducting or conducting)
matrix material
nitrogen-doped graphene-based structures
graphitic material
Figure 3 c is an SEM image of the same large single sheet of graphene. Figure 3d is a single cross-section (top) that indicates step heights of less than 0.6 nm as the AFM tip traverses the solid line in Figure 3b. A histogram (bottom of Figure 3d) of height profiles collected over the entire area …
Figure 3 c is an SEM image of the same large single sheet of graphene. Figure 3d is a single cross-section (top) that indicates step heights of less than 0.6 nm as the AFM tip traverses the solid line in Figure 3b. A histogram (bottom of Figure 3d) of height profiles collected over the entire area …
Figure 8 shows representative SEM and AFM images of G-CNT film, along with 3-D topographies of (Figure 8a) Chemically converted graphene. (Figure 8b) Single wall carbon nanotubes network. (Figure 8c) G-CNT hybrid film. Note that the dense network of G- CNT film exceeds the percolation threshold with …
Figure 8 shows representative SEM and AFM images of G-CNT film, along with 3-D topographies of (Figure 8a) Chemically converted graphene. (Figure 8b) Single wall carbon nanotubes network. (Figure 8c) G-CNT hybrid film. Note that the dense network of G- CNT film exceeds the percolation threshold with …
Figure 9 shows optical, electrical and mechanical characterization of G-CNT films according to an embodiment of the current invention. Figure 9a shows photographs of G- CNT film with increasing spin speed (from left to right), 1,050, 1,250, 1,500, 1,750 RPM, respectively. Figure 9b shows optical …
Figure 10 shows representative SEM images of a variety patterns of G-CNT electrode and device structure along with current density-voltage (J- V) curves. Figure l0a shows SEM images of G-CNT patterns spin-coated on Si/SiO₂ substrates. Figure lO b shows a 7 58086-264718 device configuration of G-CNT …
Figure 10 shows representative SEM images of a variety patterns of G-CNT electrode and device structure along with current density-voltage (J- V) curves. Figure l0a shows SEM images of G-CNT patterns spin-coated on Si/SiO₂ substrates. Figure lO b shows a 7 58086-264718 device configuration of G-CNT …
Figure 11 shows sheet resistance of G-CNT films before (squares) and after (circles) chemical doping. An exposure of 15 minutes to room temperature vapors resulted in a decrease in sheet resistance by a factor of 1.5 to 2 for all deposited films.
Figure 13 shows Micro Raman spectra that were collected inside and outside a rectangular region on (Figure 13a) glass and (Figure 13b) Si/SiO₂ according to an embodiment of the current invention. Raman intensity mapping of the G peak indicates that graphene has been completely removed from a …
Figure 16 shows an atomic force microscope image and the corresponding line- scan that confirm a step height of less than 1 nm, indicative of single sheet graphene according to this embodiment of the current invention. DETAILED DESCRIPTI O N [0031] Some embodiments of the current invention are …
Figure 14 shows Si 2p (top) and C 1 s (bottom) XPS spectra from the deposited region both before and after annealing. The Si peak is predominately Si/SiO 2, but displays a large shoulder consistent with dimethylsiloxane before the annealing process. The shoulder was nearly gone after heating at 1 …
sheet resistance of transparent electrode (claimed maximum, variant 1) |
| 700 Ω/sq |
graphene-based structures (carbon macro-molecular structures) |
sheet resistance of transparent electrode (claimed maximum, variant 2) | 44 Ω/sq | graphene-based structures (carbon macro-molecular structures) |
transparency of transparent electrode (claimed minimum, variant 3) | 87 % | graphene-based structures (carbon macro-molecular structures) |
sheet resistance of transparent electrode (claimed maximum, variant 3) | 600 Ω/sq | graphene-based structures (carbon macro-molecular structures) |
nanorods (semiconducting or conducting)
matrix material
nitrogen-doped graphene-based structures
graphitic material
Figure 3 c is an SEM image of the same large single sheet of graphene. Figure 3d is a single cross-section (top) that indicates step heights of less than 0.6 nm as the AFM tip traverses the solid line in Figure 3b. A histogram (bottom of Figure 3d) of height profiles collected over the entire area …
Figure 3 c is an SEM image of the same large single sheet of graphene. Figure 3d is a single cross-section (top) that indicates step heights of less than 0.6 nm as the AFM tip traverses the solid line in Figure 3b. A histogram (bottom of Figure 3d) of height profiles collected over the entire area …
Figure 8 shows representative SEM and AFM images of G-CNT film, along with 3-D topographies of (Figure 8a) Chemically converted graphene. (Figure 8b) Single wall carbon nanotubes network. (Figure 8c) G-CNT hybrid film. Note that the dense network of G- CNT film exceeds the percolation threshold with …
Figure 8 shows representative SEM and AFM images of G-CNT film, along with 3-D topographies of (Figure 8a) Chemically converted graphene. (Figure 8b) Single wall carbon nanotubes network. (Figure 8c) G-CNT hybrid film. Note that the dense network of G- CNT film exceeds the percolation threshold with …
Figure 9 shows optical, electrical and mechanical characterization of G-CNT films according to an embodiment of the current invention. Figure 9a shows photographs of G- CNT film with increasing spin speed (from left to right), 1,050, 1,250, 1,500, 1,750 RPM, respectively. Figure 9b shows optical …
Figure 10 shows representative SEM images of a variety patterns of G-CNT electrode and device structure along with current density-voltage (J- V) curves. Figure l0a shows SEM images of G-CNT patterns spin-coated on Si/SiO₂ substrates. Figure lO b shows a 7 58086-264718 device configuration of G-CNT …
Figure 10 shows representative SEM images of a variety patterns of G-CNT electrode and device structure along with current density-voltage (J- V) curves. Figure l0a shows SEM images of G-CNT patterns spin-coated on Si/SiO₂ substrates. Figure lO b shows a 7 58086-264718 device configuration of G-CNT …
Figure 11 shows sheet resistance of G-CNT films before (squares) and after (circles) chemical doping. An exposure of 15 minutes to room temperature vapors resulted in a decrease in sheet resistance by a factor of 1.5 to 2 for all deposited films.
Figure 13 shows Micro Raman spectra that were collected inside and outside a rectangular region on (Figure 13a) glass and (Figure 13b) Si/SiO₂ according to an embodiment of the current invention. Raman intensity mapping of the G peak indicates that graphene has been completely removed from a …
Figure 16 shows an atomic force microscope image and the corresponding line- scan that confirm a step height of less than 1 nm, indicative of single sheet graphene according to this embodiment of the current invention. DETAILED DESCRIPTI O N [0031] Some embodiments of the current invention are …
Figure 14 shows Si 2p (top) and C 1 s (bottom) XPS spectra from the deposited region both before and after annealing. The Si peak is predominately Si/SiO 2, but displays a large shoulder consistent with dimethylsiloxane before the annealing process. The shoulder was nearly gone after heating at 1 …
sheet resistance of transparent electrode (claimed maximum, variant 1) |
| 700 Ω/sq |
graphene-based structures (carbon macro-molecular structures) |
sheet resistance of transparent electrode (claimed maximum, variant 2) | 44 Ω/sq | graphene-based structures (carbon macro-molecular structures) |
transparency of transparent electrode (claimed minimum, variant 3) | 87 % | graphene-based structures (carbon macro-molecular structures) |
sheet resistance of transparent electrode (claimed maximum, variant 3) | 600 Ω/sq | graphene-based structures (carbon macro-molecular structures) |