Patent
US 9,245,752METHOD FOR ETCHING ATOMIC LAYER OF GRAPHENE
Geun Young YEOM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,245,752Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D are schematic diagrams for describing a sequence of an atomic layer etching process for graphene in accordance with an illustrative embodiment of the …
FIG. 2 B are XPS spectra recorded when performing an atomic layer etching process for graphene in an illustrative embodiment; [0020]
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 4F are schematic diagrams illustrating a sequence of a process of producing a graphene device by using an atomic layer etching process for graphene in …
FIG. 5C provides a measurement result of V 0-l according to a variation of a gate bias in the graphene device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) An atomic layer etching method for graphene, comprising: adsorbing reactive radicals on a surface of graphene by exposing the reactive radicals to the surface in a reaction chamber for a predetermined amount of time; and irr adiating an energy source to the surface of graphene on which the reactive radicals are adsorbed after the predetermined amount of time.
The atomic layer etching method of Claim 1, wherein the adsorbing reactive radicals and the irradiating the energy source are each performed two or more times.
The atomic layer etching method of Claim 1, wherein the graphene includes stacked multilayers of graphene thin films.
The atomic layer etching method of Claim 1, wherein a single layer of graphene thin film included in the graphene is etched by performing the adsorbing reactive radicals and the i rr adiating the energy source each a single time.
The atomic layer etching method of Claim 1, wherein the reactive radicals include a reactive radical generated by plasma.
The atomic layer etching method of Claim 1, 2 U.S. Patent Application No. 14/161,050 wherein the reactive radicals include a member selected from the group consisting of an O radical, an F radical, an H radical, an 02 radical, an OH radical, an N radical, and combinations thereof.
(Cu rr ently Amended) The atomic layer etching method of Claim 1, further comp ri sing: removing residue of the reactive radicals not adsorbed on the surface of the graphene in the reaction chamber after the adsorbing the reactive radicals step and before the irradiating step.
The atomic layer etching method of Claim 1, wherein the energy source includes a member selected from the group consisting of a neutral beam, an ion beam, heat energy, plasma, laser, and combinations thereof.
The atomic layer etching method of Claim 1, further comprising: removing an etching by-product which is generated by irradiating the energy source.
The atomic layer etching method of Claim 1, further comprising: depositing an etching mask on the surface of graphene.
The atomic layer etching method of Claim 1, wherein the adsorption of reactive radicals converts bonds of the graphene from sp2 bonds to sp 3 bonds.
An atomic layer etching method, comprising: adsorbing reactive radicals onto a graphene surface in a reaction chamber for a predetermined amount of time; removing from the reaction chamber the reactive radicals not adsorbed on the graphene surface; and irr adiating the reactive radical-adsorbed graphene surface with an energy source to thereby remove a single atomic layer of the graphene surface. 4
Materials described outside the worked examples.
graphene
plasma (O-based, F-based, H-based)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 B are XPS spectra recorded when performing an atomic layer etching process for graphene in an illustrative embodiment; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Flow Rate | 5–5000 sccm | — |
Flow Rate |
Table 1
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar
p. 12
Table 2
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar plasma; Table 3, conditions for annealing.
p. 13
Table 3
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar plasma; Table 3, conditions for annealing.
p. 13
Related documents with shared materials, methods, properties, or citations.
DYE-SENSITIZED SOLAR CELL INCLUDING POLYMER/GRAPHENE COMPOSITE GEL ELECTROLYTE AND METHODS OF PREPARING THE SAME
GRAPHENE TRANSFERRING METHODS, DEVICE MANUFACTURING METHOD USING THE SAME, AND SUBSTRATE STRUCTURES INCLUDING GRAPHENE
Patent
Atlas literature
Patent
US 9,245,752Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D are schematic diagrams for describing a sequence of an atomic layer etching process for graphene in accordance with an illustrative embodiment of the …
FIG. 2 B are XPS spectra recorded when performing an atomic layer etching process for graphene in an illustrative embodiment; [0020]
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 4F are schematic diagrams illustrating a sequence of a process of producing a graphene device by using an atomic layer etching process for graphene in …
FIG. 5C provides a measurement result of V 0-l according to a variation of a gate bias in the graphene device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) An atomic layer etching method for graphene, comprising: adsorbing reactive radicals on a surface of graphene by exposing the reactive radicals to the surface in a reaction chamber for a predetermined amount of time; and irr adiating an energy source to the surface of graphene on which the reactive radicals are adsorbed after the predetermined amount of time.
The atomic layer etching method of Claim 1, wherein the adsorbing reactive radicals and the irradiating the energy source are each performed two or more times.
The atomic layer etching method of Claim 1, wherein the graphene includes stacked multilayers of graphene thin films.
The atomic layer etching method of Claim 1, wherein a single layer of graphene thin film included in the graphene is etched by performing the adsorbing reactive radicals and the i rr adiating the energy source each a single time.
The atomic layer etching method of Claim 1, wherein the reactive radicals include a reactive radical generated by plasma.
The atomic layer etching method of Claim 1, 2 U.S. Patent Application No. 14/161,050 wherein the reactive radicals include a member selected from the group consisting of an O radical, an F radical, an H radical, an 02 radical, an OH radical, an N radical, and combinations thereof.
(Cu rr ently Amended) The atomic layer etching method of Claim 1, further comp ri sing: removing residue of the reactive radicals not adsorbed on the surface of the graphene in the reaction chamber after the adsorbing the reactive radicals step and before the irradiating step.
The atomic layer etching method of Claim 1, wherein the energy source includes a member selected from the group consisting of a neutral beam, an ion beam, heat energy, plasma, laser, and combinations thereof.
The atomic layer etching method of Claim 1, further comprising: removing an etching by-product which is generated by irradiating the energy source.
The atomic layer etching method of Claim 1, further comprising: depositing an etching mask on the surface of graphene.
The atomic layer etching method of Claim 1, wherein the adsorption of reactive radicals converts bonds of the graphene from sp2 bonds to sp 3 bonds.
An atomic layer etching method, comprising: adsorbing reactive radicals onto a graphene surface in a reaction chamber for a predetermined amount of time; removing from the reaction chamber the reactive radicals not adsorbed on the graphene surface; and irr adiating the reactive radical-adsorbed graphene surface with an energy source to thereby remove a single atomic layer of the graphene surface. 4
Materials described outside the worked examples.
graphene
plasma (O-based, F-based, H-based)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 B are XPS spectra recorded when performing an atomic layer etching process for graphene in an illustrative embodiment; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Flow Rate | 5–5000 sccm | — |
Flow Rate |
Table 1
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar
p. 12
Table 2
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar plasma; Table 3, conditions for annealing.
p. 13
Table 3
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar plasma; Table 3, conditions for annealing.
p. 13
Related documents with shared materials, methods, properties, or citations.
DYE-SENSITIZED SOLAR CELL INCLUDING POLYMER/GRAPHENE COMPOSITE GEL ELECTROLYTE AND METHODS OF PREPARING THE SAME
GRAPHENE TRANSFERRING METHODS, DEVICE MANUFACTURING METHOD USING THE SAME, AND SUBSTRATE STRUCTURES INCLUDING GRAPHENE
Patent
Atlas literature
Patent
US 9,245,752Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D are schematic diagrams for describing a sequence of an atomic layer etching process for graphene in accordance with an illustrative embodiment of the …
FIG. 2 B are XPS spectra recorded when performing an atomic layer etching process for graphene in an illustrative embodiment; [0020]
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 4F are schematic diagrams illustrating a sequence of a process of producing a graphene device by using an atomic layer etching process for graphene in …
FIG. 5C provides a measurement result of V 0-l according to a variation of a gate bias in the graphene device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) An atomic layer etching method for graphene, comprising: adsorbing reactive radicals on a surface of graphene by exposing the reactive radicals to the surface in a reaction chamber for a predetermined amount of time; and irr adiating an energy source to the surface of graphene on which the reactive radicals are adsorbed after the predetermined amount of time.
The atomic layer etching method of Claim 1, wherein the adsorbing reactive radicals and the irradiating the energy source are each performed two or more times.
The atomic layer etching method of Claim 1, wherein the graphene includes stacked multilayers of graphene thin films.
The atomic layer etching method of Claim 1, wherein a single layer of graphene thin film included in the graphene is etched by performing the adsorbing reactive radicals and the i rr adiating the energy source each a single time.
The atomic layer etching method of Claim 1, wherein the reactive radicals include a reactive radical generated by plasma.
The atomic layer etching method of Claim 1, 2 U.S. Patent Application No. 14/161,050 wherein the reactive radicals include a member selected from the group consisting of an O radical, an F radical, an H radical, an 02 radical, an OH radical, an N radical, and combinations thereof.
(Cu rr ently Amended) The atomic layer etching method of Claim 1, further comp ri sing: removing residue of the reactive radicals not adsorbed on the surface of the graphene in the reaction chamber after the adsorbing the reactive radicals step and before the irradiating step.
The atomic layer etching method of Claim 1, wherein the energy source includes a member selected from the group consisting of a neutral beam, an ion beam, heat energy, plasma, laser, and combinations thereof.
The atomic layer etching method of Claim 1, further comprising: removing an etching by-product which is generated by irradiating the energy source.
The atomic layer etching method of Claim 1, further comprising: depositing an etching mask on the surface of graphene.
The atomic layer etching method of Claim 1, wherein the adsorption of reactive radicals converts bonds of the graphene from sp2 bonds to sp 3 bonds.
An atomic layer etching method, comprising: adsorbing reactive radicals onto a graphene surface in a reaction chamber for a predetermined amount of time; removing from the reaction chamber the reactive radicals not adsorbed on the graphene surface; and irr adiating the reactive radical-adsorbed graphene surface with an energy source to thereby remove a single atomic layer of the graphene surface. 4
Materials described outside the worked examples.
graphene
plasma (O-based, F-based, H-based)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 B are XPS spectra recorded when performing an atomic layer etching process for graphene in an illustrative embodiment; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Flow Rate | 5–5000 sccm | — |
Flow Rate |
Table 1
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar
p. 12
Table 2
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar plasma; Table 3, conditions for annealing.
p. 13
Table 3
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar plasma; Table 3, conditions for annealing.
p. 13
Related documents with shared materials, methods, properties, or citations.
DYE-SENSITIZED SOLAR CELL INCLUDING POLYMER/GRAPHENE COMPOSITE GEL ELECTROLYTE AND METHODS OF PREPARING THE SAME
GRAPHENE TRANSFERRING METHODS, DEVICE MANUFACTURING METHOD USING THE SAME, AND SUBSTRATE STRUCTURES INCLUDING GRAPHENE
Patent
Atlas literature
Patent
US 9,245,752Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 D are schematic diagrams for describing a sequence of an atomic layer etching process for graphene in accordance with an illustrative embodiment of the …
FIG. 2 B are XPS spectra recorded when performing an atomic layer etching process for graphene in an illustrative embodiment; [0020]
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 4F are schematic diagrams illustrating a sequence of a process of producing a graphene device by using an atomic layer etching process for graphene in …
FIG. 5C provides a measurement result of V 0-l according to a variation of a gate bias in the graphene device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) An atomic layer etching method for graphene, comprising: adsorbing reactive radicals on a surface of graphene by exposing the reactive radicals to the surface in a reaction chamber for a predetermined amount of time; and irr adiating an energy source to the surface of graphene on which the reactive radicals are adsorbed after the predetermined amount of time.
The atomic layer etching method of Claim 1, wherein the adsorbing reactive radicals and the irradiating the energy source are each performed two or more times.
The atomic layer etching method of Claim 1, wherein the graphene includes stacked multilayers of graphene thin films.
The atomic layer etching method of Claim 1, wherein a single layer of graphene thin film included in the graphene is etched by performing the adsorbing reactive radicals and the i rr adiating the energy source each a single time.
The atomic layer etching method of Claim 1, wherein the reactive radicals include a reactive radical generated by plasma.
The atomic layer etching method of Claim 1, 2 U.S. Patent Application No. 14/161,050 wherein the reactive radicals include a member selected from the group consisting of an O radical, an F radical, an H radical, an 02 radical, an OH radical, an N radical, and combinations thereof.
(Cu rr ently Amended) The atomic layer etching method of Claim 1, further comp ri sing: removing residue of the reactive radicals not adsorbed on the surface of the graphene in the reaction chamber after the adsorbing the reactive radicals step and before the irradiating step.
The atomic layer etching method of Claim 1, wherein the energy source includes a member selected from the group consisting of a neutral beam, an ion beam, heat energy, plasma, laser, and combinations thereof.
The atomic layer etching method of Claim 1, further comprising: removing an etching by-product which is generated by irradiating the energy source.
The atomic layer etching method of Claim 1, further comprising: depositing an etching mask on the surface of graphene.
The atomic layer etching method of Claim 1, wherein the adsorption of reactive radicals converts bonds of the graphene from sp2 bonds to sp 3 bonds.
An atomic layer etching method, comprising: adsorbing reactive radicals onto a graphene surface in a reaction chamber for a predetermined amount of time; removing from the reaction chamber the reactive radicals not adsorbed on the graphene surface; and irr adiating the reactive radical-adsorbed graphene surface with an energy source to thereby remove a single atomic layer of the graphene surface. 4
Materials described outside the worked examples.
graphene
plasma (O-based, F-based, H-based)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 B are XPS spectra recorded when performing an atomic layer etching process for graphene in an illustrative embodiment; [0020]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Flow Rate | 5–5000 sccm | — |
Flow Rate |
Table 1
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar
p. 12
Table 2
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar plasma; Table 3, conditions for annealing.
p. 13
Table 3
SVG
To elaborate, Table 1 shows conditions for 02 plasma; Table 2, conditions for Ar plasma; Table 3, conditions for annealing.
p. 13
Related documents with shared materials, methods, properties, or citations.
DYE-SENSITIZED SOLAR CELL INCLUDING POLYMER/GRAPHENE COMPOSITE GEL ELECTROLYTE AND METHODS OF PREPARING THE SAME
GRAPHENE TRANSFERRING METHODS, DEVICE MANUFACTURING METHOD USING THE SAME, AND SUBSTRATE STRUCTURES INCLUDING GRAPHENE
reactive radicals (O, F, H, O2, OH, N)
neutral beam gas (He, Ar, N2, Ne, Xe)
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 5C provides a measurement result of V 0-l according to a variation of a gate bias in the graphene device.
| 10–10000 sccm |
| — |
— | 1–5000 W | — |
Pressure | 0.1–500 mTorr | — |
— | 10–20 eV | — |
— | 20–30 eV | — |
— | 10–40 eV | — |
— | 30–33 eV | — |
— | 20–40 eV | — |
— | 30–40 eV | — |
Duration | 4–30 minutes | — |
— | ≤ 10 eV | — |
— | ≤ 20 eV | — |
— | ≤ 30 eV | — |
— | ≤ 40 eV | — |
reactive radicals (O, F, H, O2, OH, N)
neutral beam gas (He, Ar, N2, Ne, Xe)
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 5C provides a measurement result of V 0-l according to a variation of a gate bias in the graphene device.
| 10–10000 sccm |
| — |
— | 1–5000 W | — |
Pressure | 0.1–500 mTorr | — |
— | 10–20 eV | — |
— | 20–30 eV | — |
— | 10–40 eV | — |
— | 30–33 eV | — |
— | 20–40 eV | — |
— | 30–40 eV | — |
Duration | 4–30 minutes | — |
— | ≤ 10 eV | — |
— | ≤ 20 eV | — |
— | ≤ 30 eV | — |
— | ≤ 40 eV | — |
reactive radicals (O, F, H, O2, OH, N)
neutral beam gas (He, Ar, N2, Ne, Xe)
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 5C provides a measurement result of V 0-l according to a variation of a gate bias in the graphene device.
| 10–10000 sccm |
| — |
— | 1–5000 W | — |
Pressure | 0.1–500 mTorr | — |
— | 10–20 eV | — |
— | 20–30 eV | — |
— | 10–40 eV | — |
— | 30–33 eV | — |
— | 20–40 eV | — |
— | 30–40 eV | — |
Duration | 4–30 minutes | — |
— | ≤ 10 eV | — |
— | ≤ 20 eV | — |
— | ≤ 30 eV | — |
— | ≤ 40 eV | — |
reactive radicals (O, F, H, O2, OH, N)
neutral beam gas (He, Ar, N2, Ne, Xe)
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 3A is a graph showing a measurement of light transmittance in relation to a repetition number of the atomic layer etching process for graphene, which is …
FIG. 5C provides a measurement result of V 0-l according to a variation of a gate bias in the graphene device.
| 10–10000 sccm |
| — |
— | 1–5000 W | — |
Pressure | 0.1–500 mTorr | — |
— | 10–20 eV | — |
— | 20–30 eV | — |
— | 10–40 eV | — |
— | 30–33 eV | — |
— | 20–40 eV | — |
— | 30–40 eV | — |
Duration | 4–30 minutes | — |
— | ≤ 10 eV | — |
— | ≤ 20 eV | — |
— | ≤ 30 eV | — |
— | ≤ 40 eV | — |