Patent
US 9,041,440GRAPHENE-BASED FREQUENCY TRIPLER
Joerg Appenzeller
US
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Patent
Atlas literature
Patent
US 9,041,440Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
FIG. 2a, a substitutional doping scheme is utilized to realize the n-/p- type graphene FETs. Substitutional doping is performed by replacing a small portion of …
FIG. 3b, an outline of an optical image (upper right) of an exfoliated graphene flake is provided. An outline of a scanning electron micrograph (SEM) image …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A frequency tripler device, comprising: a first graphene based field effect transistor (FET) of a first dopant type, having a gate, a drain, and a source; and a second graphene based FET of a second dopant type, having a gate, a drain, and a source, the gate of the first FET coupled to the gate of the second FET and coupled to an input signal having an alternating current (AC) signal component of a first frequency, the combination of the first and second FETs generate an output signal with a dominant AC signal of a frequency of about e times the first frequency.
The frequency triple device of claim 1, where the first and second FETs are generated by one of substitutional doping, charge transfer doping, electrostatic doping, and combinations thereof. 12
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Two graphene FETs connected in series with a common bottom gate driven by a sinusoidal input signal at 300 Hz. Two graphene in-plane side gates used for electrostatic doping. Output spectrum shows more than 70% of output power concentrated at 900 Hz (3× input frequency).
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based frequency tripler
graphene-based frequency tripler (electrostatic doping embodiment)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Output spectral purity at 900 Hz (3× input at 300 Hz) | 70 % | — |
Comparative spectral purity for conventional FET triplers | 15 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,041,440Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
FIG. 2a, a substitutional doping scheme is utilized to realize the n-/p- type graphene FETs. Substitutional doping is performed by replacing a small portion of …
FIG. 3b, an outline of an optical image (upper right) of an exfoliated graphene flake is provided. An outline of a scanning electron micrograph (SEM) image …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A frequency tripler device, comprising: a first graphene based field effect transistor (FET) of a first dopant type, having a gate, a drain, and a source; and a second graphene based FET of a second dopant type, having a gate, a drain, and a source, the gate of the first FET coupled to the gate of the second FET and coupled to an input signal having an alternating current (AC) signal component of a first frequency, the combination of the first and second FETs generate an output signal with a dominant AC signal of a frequency of about e times the first frequency.
The frequency triple device of claim 1, where the first and second FETs are generated by one of substitutional doping, charge transfer doping, electrostatic doping, and combinations thereof. 12
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Two graphene FETs connected in series with a common bottom gate driven by a sinusoidal input signal at 300 Hz. Two graphene in-plane side gates used for electrostatic doping. Output spectrum shows more than 70% of output power concentrated at 900 Hz (3× input frequency).
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based frequency tripler
graphene-based frequency tripler (electrostatic doping embodiment)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Output spectral purity at 900 Hz (3× input at 300 Hz) | 70 % | — |
Comparative spectral purity for conventional FET triplers | 15 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,041,440Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
FIG. 2a, a substitutional doping scheme is utilized to realize the n-/p- type graphene FETs. Substitutional doping is performed by replacing a small portion of …
FIG. 3b, an outline of an optical image (upper right) of an exfoliated graphene flake is provided. An outline of a scanning electron micrograph (SEM) image …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A frequency tripler device, comprising: a first graphene based field effect transistor (FET) of a first dopant type, having a gate, a drain, and a source; and a second graphene based FET of a second dopant type, having a gate, a drain, and a source, the gate of the first FET coupled to the gate of the second FET and coupled to an input signal having an alternating current (AC) signal component of a first frequency, the combination of the first and second FETs generate an output signal with a dominant AC signal of a frequency of about e times the first frequency.
The frequency triple device of claim 1, where the first and second FETs are generated by one of substitutional doping, charge transfer doping, electrostatic doping, and combinations thereof. 12
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Two graphene FETs connected in series with a common bottom gate driven by a sinusoidal input signal at 300 Hz. Two graphene in-plane side gates used for electrostatic doping. Output spectrum shows more than 70% of output power concentrated at 900 Hz (3× input frequency).
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based frequency tripler
graphene-based frequency tripler (electrostatic doping embodiment)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Output spectral purity at 900 Hz (3× input at 300 Hz) | 70 % | — |
Comparative spectral purity for conventional FET triplers | 15 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,041,440Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
FIG. 2a, a substitutional doping scheme is utilized to realize the n-/p- type graphene FETs. Substitutional doping is performed by replacing a small portion of …
FIG. 3b, an outline of an optical image (upper right) of an exfoliated graphene flake is provided. An outline of a scanning electron micrograph (SEM) image …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A frequency tripler device, comprising: a first graphene based field effect transistor (FET) of a first dopant type, having a gate, a drain, and a source; and a second graphene based FET of a second dopant type, having a gate, a drain, and a source, the gate of the first FET coupled to the gate of the second FET and coupled to an input signal having an alternating current (AC) signal component of a first frequency, the combination of the first and second FETs generate an output signal with a dominant AC signal of a frequency of about e times the first frequency.
The frequency triple device of claim 1, where the first and second FETs are generated by one of substitutional doping, charge transfer doping, electrostatic doping, and combinations thereof. 12
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Two graphene FETs connected in series with a common bottom gate driven by a sinusoidal input signal at 300 Hz. Two graphene in-plane side gates used for electrostatic doping. Output spectrum shows more than 70% of output power concentrated at 900 Hz (3× input frequency).
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based frequency tripler
graphene-based frequency tripler (electrostatic doping embodiment)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Output spectral purity at 900 Hz (3× input at 300 Hz) | 70 % | — |
Comparative spectral purity for conventional FET triplers | 15 % |
Related documents with shared materials, methods, properties, or citations.
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
FIG. 2a, a substitutional doping scheme is utilized to realize the n-/p- type graphene FETs. Substitutional doping is performed by replacing a small portion of …
FIG. 3b, an outline of an optical image (upper right) of an exfoliated graphene flake is provided. An outline of a scanning electron micrograph (SEM) image …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
| — |
Output spectral purity at 600 Hz (experimentally achieved) | 70 % | — |
GRAPHENE OXIDE-BASED POROUS 3D MESH
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
FIG. 2a, a substitutional doping scheme is utilized to realize the n-/p- type graphene FETs. Substitutional doping is performed by replacing a small portion of …
FIG. 3b, an outline of an optical image (upper right) of an exfoliated graphene flake is provided. An outline of a scanning electron micrograph (SEM) image …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
| — |
Output spectral purity at 600 Hz (experimentally achieved) | 70 % | — |
GRAPHENE OXIDE-BASED POROUS 3D MESH
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
FIG. 2a, a substitutional doping scheme is utilized to realize the n-/p- type graphene FETs. Substitutional doping is performed by replacing a small portion of …
FIG. 3b, an outline of an optical image (upper right) of an exfoliated graphene flake is provided. An outline of a scanning electron micrograph (SEM) image …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
| — |
Output spectral purity at 600 Hz (experimentally achieved) | 70 % | — |
GRAPHENE OXIDE-BASED POROUS 3D MESH
FIG. 1c, according to the present disclosure. [0012] FIG. l d provides graphs of I-V and voltage vs. time depicting operational principle of a frequency …
FIG. 2a, a substitutional doping scheme is utilized to realize the n-/p- type graphene FETs. Substitutional doping is performed by replacing a small portion of …
FIG. 3b, an outline of an optical image (upper right) of an exfoliated graphene flake is provided. An outline of a scanning electron micrograph (SEM) image …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
FIG. 4 depicting the fabricated device on the single-layer graphene (SLG) portion of the flake 4 66 168-03 with the zoom-in SEM image illustrating the achieved …
| — |
Output spectral purity at 600 Hz (experimentally achieved) | 70 % | — |