Patent
US 9,410,243Method for Forming Monolayer Graphene-Boron Nitride i eterostructures Inventors:
Peter Werner Sutter, Eli Anguelova Sutter
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,410,243Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(a), monolayer graphene and h-BN domains are distinguished by their different LEEM image contrast. The monolayer graphene domains can be observed due to …
FIG. 2(a)). As illustrated, only carbon is detected within the monolayer graphene domain, which implies that exposure of the monolayer graphene on the Ru …
FIG. 3(f) shows a UHV STM image for a graphene-boron nitride heterostructure on Ru(0001) substrate, with magnification of the graphene-boron nitride boundary. …
FIG. 4(c) shows a high-magnification image of the flat near- interface zone, showing a honeycomb structure matching the h-BN atomic lattice and point-like …
FIG. 5(a) depicts a schematic representation of a graphene domain on a Ru(0001) surface, in equilibrium with C monomers bound in threefold-18-hollow sites of …
FIG. 6(b) shows a comparison of the evolution of LEEM I-V intensities at V = 2.2. eV and the measured area of one of the graphene domains depicted in
FIG. 7.
FIG. 8, which depicts oxygen-induced removal of thermal C adatoms on Ru(0001) via a time- dependent LEEM I-V intensity at 2.2 eV electron energy during …
FIG. 9. Samples were prepared in accordance with one of the disclosed embodiments, i.e., (i) partial monolayer graphene growth at 10-g Torr, 780 ° C; (ii) 02 …
FIG. 10(d) shows an UH V STM image of monolayer graphene-boron nitride heterostructures. DETAILED DESCRIPTION [0046] Reference will be made in detail to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene boron nitride interface, comprising: exposing a ruthenium substrate to ethylene; exposing the ruthenium substrate to oxygen after exposure to ethylene; stopping exposure to oxygen when C adatoms have been substantially eliminated from portions of the ruthenium substrate that are not covered by monolayer graphene domains; and exposing the ruthenium substrate to borazine after exposure to oxygen.
The method according to claim 1, further comprising: stopping exposure to ethylene upon partial coverage of the ruthenium substrate with monolayer graphene domains.
The method according to claim 1, wherein exposing the ruthenium substrate to ethylene further comprises: exposure to ethylene under 10 -8 Torr and 800 C and stopping exposure to ethylene exposure after approximately 400 seconds.
The method according to claim 1, wherein the exposures to ethylene, oxygen and borazine exposure are performed via ultrahigh vacuum chemical vapor deposition.
The method according to claim 1, wherein the ruthenium substrate comprises a Ru(000 1) single crystal substrate.
The method according to claim 1, wherein the ruthenium substrate comprises an epitaxial Ru(000 1) thin film on a sapphire substrate.
The method according to claim 1, wherein the exposure to ethylene occurs at a pressure of 1 x 1 0-8 Torr.
The method according to claim 1, wherein the exposure to ethylene occurs at a temperature between 740 ° C to 800 0 C.
The method according to claim 1, wherein the exposure to oxygen occurs at a pressure of 2 x 10-9 Torr.
The method according to claim 1, wherein the exposure to oxygen occurs at a temperature between 610 0 C to 680 0 C.
The method according to claim 1, wherein the exposure to borazine occurs at a pressure of 1 x 10 -7 Torr.
The method according to claim 1, wherein the step of exposure to borazine occurs at a temperature of 680 0 C.
The method according to claim 1, wherein the ethylene is 99.999 percent pure.
The method according to claim 1, wherein the borazine is 99.999 percent pure.
The method according to claim 1, wherein the oxygen (0 2) is 99.999 percent pure 02.
The method according to claim 1, wherein after exposing the ruthenium substrate to borazine the ruthenium substrate is covered by a graphene-boron nitride heterostructure having an abrupt interface between graphene and boron nitride.
The method according to claim 1, wherein after exposing the ruthenium substrate to borazine the ruthenium substrate is covered by homogeneous ternary C-B-N alloy phases having a nonabrupt interface between graphene and boron nitride.
Page 2 PATENT App. Ser. No.: 14/453,3 14 Dkt. No.: BSA 13-22 canceled
canceled
canceled
A method for synthesizing tunable homogeneous ternary C-B-N alloy phases, comprising: exposing a ruthenium substrate to ethylene sufficient to form the homogeneous ternary C- B-N alloy phases; exposing the ruthenium substrate to oxygen after exposure to ethylene; exposing the ruthenium substrate to borazine after exposure to oxygen sufficient to form the homogeneous ternary C-B-N alloy phases, wherein the homogeneous ternary C-B-N alloy phases are formed as a uniform 2D membrane.
The method according to claim 21, wherein the homogeneous ternary C-B-N alloy phases are formed at the interface between boron nitride and graphene.
Page 5 canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-boron nitride heterostructure monolayer membrane
Materials described outside the worked examples.
ethylene
C₂H₄
monolayer graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2(a)). As illustrated, only carbon is detected within the monolayer graphene domain, which implies that exposure of the monolayer graphene on the Ru …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 500–750 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,410,243Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(a), monolayer graphene and h-BN domains are distinguished by their different LEEM image contrast. The monolayer graphene domains can be observed due to …
FIG. 2(a)). As illustrated, only carbon is detected within the monolayer graphene domain, which implies that exposure of the monolayer graphene on the Ru …
FIG. 3(f) shows a UHV STM image for a graphene-boron nitride heterostructure on Ru(0001) substrate, with magnification of the graphene-boron nitride boundary. …
FIG. 4(c) shows a high-magnification image of the flat near- interface zone, showing a honeycomb structure matching the h-BN atomic lattice and point-like …
FIG. 5(a) depicts a schematic representation of a graphene domain on a Ru(0001) surface, in equilibrium with C monomers bound in threefold-18-hollow sites of …
FIG. 6(b) shows a comparison of the evolution of LEEM I-V intensities at V = 2.2. eV and the measured area of one of the graphene domains depicted in
FIG. 7.
FIG. 8, which depicts oxygen-induced removal of thermal C adatoms on Ru(0001) via a time- dependent LEEM I-V intensity at 2.2 eV electron energy during …
FIG. 9. Samples were prepared in accordance with one of the disclosed embodiments, i.e., (i) partial monolayer graphene growth at 10-g Torr, 780 ° C; (ii) 02 …
FIG. 10(d) shows an UH V STM image of monolayer graphene-boron nitride heterostructures. DETAILED DESCRIPTION [0046] Reference will be made in detail to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene boron nitride interface, comprising: exposing a ruthenium substrate to ethylene; exposing the ruthenium substrate to oxygen after exposure to ethylene; stopping exposure to oxygen when C adatoms have been substantially eliminated from portions of the ruthenium substrate that are not covered by monolayer graphene domains; and exposing the ruthenium substrate to borazine after exposure to oxygen.
The method according to claim 1, further comprising: stopping exposure to ethylene upon partial coverage of the ruthenium substrate with monolayer graphene domains.
The method according to claim 1, wherein exposing the ruthenium substrate to ethylene further comprises: exposure to ethylene under 10 -8 Torr and 800 C and stopping exposure to ethylene exposure after approximately 400 seconds.
The method according to claim 1, wherein the exposures to ethylene, oxygen and borazine exposure are performed via ultrahigh vacuum chemical vapor deposition.
The method according to claim 1, wherein the ruthenium substrate comprises a Ru(000 1) single crystal substrate.
The method according to claim 1, wherein the ruthenium substrate comprises an epitaxial Ru(000 1) thin film on a sapphire substrate.
The method according to claim 1, wherein the exposure to ethylene occurs at a pressure of 1 x 1 0-8 Torr.
The method according to claim 1, wherein the exposure to ethylene occurs at a temperature between 740 ° C to 800 0 C.
The method according to claim 1, wherein the exposure to oxygen occurs at a pressure of 2 x 10-9 Torr.
The method according to claim 1, wherein the exposure to oxygen occurs at a temperature between 610 0 C to 680 0 C.
The method according to claim 1, wherein the exposure to borazine occurs at a pressure of 1 x 10 -7 Torr.
The method according to claim 1, wherein the step of exposure to borazine occurs at a temperature of 680 0 C.
The method according to claim 1, wherein the ethylene is 99.999 percent pure.
The method according to claim 1, wherein the borazine is 99.999 percent pure.
The method according to claim 1, wherein the oxygen (0 2) is 99.999 percent pure 02.
The method according to claim 1, wherein after exposing the ruthenium substrate to borazine the ruthenium substrate is covered by a graphene-boron nitride heterostructure having an abrupt interface between graphene and boron nitride.
The method according to claim 1, wherein after exposing the ruthenium substrate to borazine the ruthenium substrate is covered by homogeneous ternary C-B-N alloy phases having a nonabrupt interface between graphene and boron nitride.
Page 2 PATENT App. Ser. No.: 14/453,3 14 Dkt. No.: BSA 13-22 canceled
canceled
canceled
A method for synthesizing tunable homogeneous ternary C-B-N alloy phases, comprising: exposing a ruthenium substrate to ethylene sufficient to form the homogeneous ternary C- B-N alloy phases; exposing the ruthenium substrate to oxygen after exposure to ethylene; exposing the ruthenium substrate to borazine after exposure to oxygen sufficient to form the homogeneous ternary C-B-N alloy phases, wherein the homogeneous ternary C-B-N alloy phases are formed as a uniform 2D membrane.
The method according to claim 21, wherein the homogeneous ternary C-B-N alloy phases are formed at the interface between boron nitride and graphene.
Page 5 canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-boron nitride heterostructure monolayer membrane
Materials described outside the worked examples.
ethylene
C₂H₄
monolayer graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2(a)). As illustrated, only carbon is detected within the monolayer graphene domain, which implies that exposure of the monolayer graphene on the Ru …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 500–750 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,410,243Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(a), monolayer graphene and h-BN domains are distinguished by their different LEEM image contrast. The monolayer graphene domains can be observed due to …
FIG. 2(a)). As illustrated, only carbon is detected within the monolayer graphene domain, which implies that exposure of the monolayer graphene on the Ru …
FIG. 3(f) shows a UHV STM image for a graphene-boron nitride heterostructure on Ru(0001) substrate, with magnification of the graphene-boron nitride boundary. …
FIG. 4(c) shows a high-magnification image of the flat near- interface zone, showing a honeycomb structure matching the h-BN atomic lattice and point-like …
FIG. 5(a) depicts a schematic representation of a graphene domain on a Ru(0001) surface, in equilibrium with C monomers bound in threefold-18-hollow sites of …
FIG. 6(b) shows a comparison of the evolution of LEEM I-V intensities at V = 2.2. eV and the measured area of one of the graphene domains depicted in
FIG. 7.
FIG. 8, which depicts oxygen-induced removal of thermal C adatoms on Ru(0001) via a time- dependent LEEM I-V intensity at 2.2 eV electron energy during …
FIG. 9. Samples were prepared in accordance with one of the disclosed embodiments, i.e., (i) partial monolayer graphene growth at 10-g Torr, 780 ° C; (ii) 02 …
FIG. 10(d) shows an UH V STM image of monolayer graphene-boron nitride heterostructures. DETAILED DESCRIPTION [0046] Reference will be made in detail to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene boron nitride interface, comprising: exposing a ruthenium substrate to ethylene; exposing the ruthenium substrate to oxygen after exposure to ethylene; stopping exposure to oxygen when C adatoms have been substantially eliminated from portions of the ruthenium substrate that are not covered by monolayer graphene domains; and exposing the ruthenium substrate to borazine after exposure to oxygen.
The method according to claim 1, further comprising: stopping exposure to ethylene upon partial coverage of the ruthenium substrate with monolayer graphene domains.
The method according to claim 1, wherein exposing the ruthenium substrate to ethylene further comprises: exposure to ethylene under 10 -8 Torr and 800 C and stopping exposure to ethylene exposure after approximately 400 seconds.
The method according to claim 1, wherein the exposures to ethylene, oxygen and borazine exposure are performed via ultrahigh vacuum chemical vapor deposition.
The method according to claim 1, wherein the ruthenium substrate comprises a Ru(000 1) single crystal substrate.
The method according to claim 1, wherein the ruthenium substrate comprises an epitaxial Ru(000 1) thin film on a sapphire substrate.
The method according to claim 1, wherein the exposure to ethylene occurs at a pressure of 1 x 1 0-8 Torr.
The method according to claim 1, wherein the exposure to ethylene occurs at a temperature between 740 ° C to 800 0 C.
The method according to claim 1, wherein the exposure to oxygen occurs at a pressure of 2 x 10-9 Torr.
The method according to claim 1, wherein the exposure to oxygen occurs at a temperature between 610 0 C to 680 0 C.
The method according to claim 1, wherein the exposure to borazine occurs at a pressure of 1 x 10 -7 Torr.
The method according to claim 1, wherein the step of exposure to borazine occurs at a temperature of 680 0 C.
The method according to claim 1, wherein the ethylene is 99.999 percent pure.
The method according to claim 1, wherein the borazine is 99.999 percent pure.
The method according to claim 1, wherein the oxygen (0 2) is 99.999 percent pure 02.
The method according to claim 1, wherein after exposing the ruthenium substrate to borazine the ruthenium substrate is covered by a graphene-boron nitride heterostructure having an abrupt interface between graphene and boron nitride.
The method according to claim 1, wherein after exposing the ruthenium substrate to borazine the ruthenium substrate is covered by homogeneous ternary C-B-N alloy phases having a nonabrupt interface between graphene and boron nitride.
Page 2 PATENT App. Ser. No.: 14/453,3 14 Dkt. No.: BSA 13-22 canceled
canceled
canceled
A method for synthesizing tunable homogeneous ternary C-B-N alloy phases, comprising: exposing a ruthenium substrate to ethylene sufficient to form the homogeneous ternary C- B-N alloy phases; exposing the ruthenium substrate to oxygen after exposure to ethylene; exposing the ruthenium substrate to borazine after exposure to oxygen sufficient to form the homogeneous ternary C-B-N alloy phases, wherein the homogeneous ternary C-B-N alloy phases are formed as a uniform 2D membrane.
The method according to claim 21, wherein the homogeneous ternary C-B-N alloy phases are formed at the interface between boron nitride and graphene.
Page 5 canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-boron nitride heterostructure monolayer membrane
Materials described outside the worked examples.
ethylene
C₂H₄
monolayer graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2(a)). As illustrated, only carbon is detected within the monolayer graphene domain, which implies that exposure of the monolayer graphene on the Ru …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 500–750 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,410,243Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(a), monolayer graphene and h-BN domains are distinguished by their different LEEM image contrast. The monolayer graphene domains can be observed due to …
FIG. 2(a)). As illustrated, only carbon is detected within the monolayer graphene domain, which implies that exposure of the monolayer graphene on the Ru …
FIG. 3(f) shows a UHV STM image for a graphene-boron nitride heterostructure on Ru(0001) substrate, with magnification of the graphene-boron nitride boundary. …
FIG. 4(c) shows a high-magnification image of the flat near- interface zone, showing a honeycomb structure matching the h-BN atomic lattice and point-like …
FIG. 5(a) depicts a schematic representation of a graphene domain on a Ru(0001) surface, in equilibrium with C monomers bound in threefold-18-hollow sites of …
FIG. 6(b) shows a comparison of the evolution of LEEM I-V intensities at V = 2.2. eV and the measured area of one of the graphene domains depicted in
FIG. 7.
FIG. 8, which depicts oxygen-induced removal of thermal C adatoms on Ru(0001) via a time- dependent LEEM I-V intensity at 2.2 eV electron energy during …
FIG. 9. Samples were prepared in accordance with one of the disclosed embodiments, i.e., (i) partial monolayer graphene growth at 10-g Torr, 780 ° C; (ii) 02 …
FIG. 10(d) shows an UH V STM image of monolayer graphene-boron nitride heterostructures. DETAILED DESCRIPTION [0046] Reference will be made in detail to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene boron nitride interface, comprising: exposing a ruthenium substrate to ethylene; exposing the ruthenium substrate to oxygen after exposure to ethylene; stopping exposure to oxygen when C adatoms have been substantially eliminated from portions of the ruthenium substrate that are not covered by monolayer graphene domains; and exposing the ruthenium substrate to borazine after exposure to oxygen.
The method according to claim 1, further comprising: stopping exposure to ethylene upon partial coverage of the ruthenium substrate with monolayer graphene domains.
The method according to claim 1, wherein exposing the ruthenium substrate to ethylene further comprises: exposure to ethylene under 10 -8 Torr and 800 C and stopping exposure to ethylene exposure after approximately 400 seconds.
The method according to claim 1, wherein the exposures to ethylene, oxygen and borazine exposure are performed via ultrahigh vacuum chemical vapor deposition.
The method according to claim 1, wherein the ruthenium substrate comprises a Ru(000 1) single crystal substrate.
The method according to claim 1, wherein the ruthenium substrate comprises an epitaxial Ru(000 1) thin film on a sapphire substrate.
The method according to claim 1, wherein the exposure to ethylene occurs at a pressure of 1 x 1 0-8 Torr.
The method according to claim 1, wherein the exposure to ethylene occurs at a temperature between 740 ° C to 800 0 C.
The method according to claim 1, wherein the exposure to oxygen occurs at a pressure of 2 x 10-9 Torr.
The method according to claim 1, wherein the exposure to oxygen occurs at a temperature between 610 0 C to 680 0 C.
The method according to claim 1, wherein the exposure to borazine occurs at a pressure of 1 x 10 -7 Torr.
The method according to claim 1, wherein the step of exposure to borazine occurs at a temperature of 680 0 C.
The method according to claim 1, wherein the ethylene is 99.999 percent pure.
The method according to claim 1, wherein the borazine is 99.999 percent pure.
The method according to claim 1, wherein the oxygen (0 2) is 99.999 percent pure 02.
The method according to claim 1, wherein after exposing the ruthenium substrate to borazine the ruthenium substrate is covered by a graphene-boron nitride heterostructure having an abrupt interface between graphene and boron nitride.
The method according to claim 1, wherein after exposing the ruthenium substrate to borazine the ruthenium substrate is covered by homogeneous ternary C-B-N alloy phases having a nonabrupt interface between graphene and boron nitride.
Page 2 PATENT App. Ser. No.: 14/453,3 14 Dkt. No.: BSA 13-22 canceled
canceled
canceled
A method for synthesizing tunable homogeneous ternary C-B-N alloy phases, comprising: exposing a ruthenium substrate to ethylene sufficient to form the homogeneous ternary C- B-N alloy phases; exposing the ruthenium substrate to oxygen after exposure to ethylene; exposing the ruthenium substrate to borazine after exposure to oxygen sufficient to form the homogeneous ternary C-B-N alloy phases, wherein the homogeneous ternary C-B-N alloy phases are formed as a uniform 2D membrane.
The method according to claim 21, wherein the homogeneous ternary C-B-N alloy phases are formed at the interface between boron nitride and graphene.
Page 5 canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-boron nitride heterostructure monolayer membrane
Materials described outside the worked examples.
ethylene
C₂H₄
monolayer graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2(a)). As illustrated, only carbon is detected within the monolayer graphene domain, which implies that exposure of the monolayer graphene on the Ru …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 500–750 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
oxygen
O₂
ruthenium substrate
Ru
borazine
B₃N₃H₆
sapphire substrate
Al₂O₃
hexagonal boron nitride
h-BN
ternary C-B-N alloy
graphene-boron nitride heterostructure
FIG. 5(a) depicts a schematic representation of a graphene domain on a Ru(0001) surface, in equilibrium with C monomers bound in threefold-18-hollow sites of …
FIG. 6(b) shows a comparison of the evolution of LEEM I-V intensities at V = 2.2. eV and the measured area of one of the graphene domains depicted in
FIG. 8, which depicts oxygen-induced removal of thermal C adatoms on Ru(0001) via a time- dependent LEEM I-V intensity at 2.2 eV electron energy during …
FIG. 9. Samples were prepared in accordance with one of the disclosed embodiments, i.e., (i) partial monolayer graphene growth at 10-g Torr, 780 ° C; (ii) 02 …
| 740–750 °C |
| — |
Pressure | 1e-8 Torr | — |
Pressure | 0–8 Torr | — |
Pressure | ≤ 1e-8 Torr | — |
oxygen
O₂
ruthenium substrate
Ru
borazine
B₃N₃H₆
sapphire substrate
Al₂O₃
hexagonal boron nitride
h-BN
ternary C-B-N alloy
graphene-boron nitride heterostructure
FIG. 5(a) depicts a schematic representation of a graphene domain on a Ru(0001) surface, in equilibrium with C monomers bound in threefold-18-hollow sites of …
FIG. 6(b) shows a comparison of the evolution of LEEM I-V intensities at V = 2.2. eV and the measured area of one of the graphene domains depicted in
FIG. 8, which depicts oxygen-induced removal of thermal C adatoms on Ru(0001) via a time- dependent LEEM I-V intensity at 2.2 eV electron energy during …
FIG. 9. Samples were prepared in accordance with one of the disclosed embodiments, i.e., (i) partial monolayer graphene growth at 10-g Torr, 780 ° C; (ii) 02 …
| 740–750 °C |
| — |
Pressure | 1e-8 Torr | — |
Pressure | 0–8 Torr | — |
Pressure | ≤ 1e-8 Torr | — |
oxygen
O₂
ruthenium substrate
Ru
borazine
B₃N₃H₆
sapphire substrate
Al₂O₃
hexagonal boron nitride
h-BN
ternary C-B-N alloy
graphene-boron nitride heterostructure
FIG. 5(a) depicts a schematic representation of a graphene domain on a Ru(0001) surface, in equilibrium with C monomers bound in threefold-18-hollow sites of …
FIG. 6(b) shows a comparison of the evolution of LEEM I-V intensities at V = 2.2. eV and the measured area of one of the graphene domains depicted in
FIG. 8, which depicts oxygen-induced removal of thermal C adatoms on Ru(0001) via a time- dependent LEEM I-V intensity at 2.2 eV electron energy during …
FIG. 9. Samples were prepared in accordance with one of the disclosed embodiments, i.e., (i) partial monolayer graphene growth at 10-g Torr, 780 ° C; (ii) 02 …
| 740–750 °C |
| — |
Pressure | 1e-8 Torr | — |
Pressure | 0–8 Torr | — |
Pressure | ≤ 1e-8 Torr | — |
oxygen
O₂
ruthenium substrate
Ru
borazine
B₃N₃H₆
sapphire substrate
Al₂O₃
hexagonal boron nitride
h-BN
ternary C-B-N alloy
graphene-boron nitride heterostructure
FIG. 5(a) depicts a schematic representation of a graphene domain on a Ru(0001) surface, in equilibrium with C monomers bound in threefold-18-hollow sites of …
FIG. 6(b) shows a comparison of the evolution of LEEM I-V intensities at V = 2.2. eV and the measured area of one of the graphene domains depicted in
FIG. 8, which depicts oxygen-induced removal of thermal C adatoms on Ru(0001) via a time- dependent LEEM I-V intensity at 2.2 eV electron energy during …
FIG. 9. Samples were prepared in accordance with one of the disclosed embodiments, i.e., (i) partial monolayer graphene growth at 10-g Torr, 780 ° C; (ii) 02 …
| 740–750 °C |
| — |
Pressure | 1e-8 Torr | — |
Pressure | 0–8 Torr | — |
Pressure | ≤ 1e-8 Torr | — |